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    Acidic aluminum cleaner containing an oxidant and a nonionic surfactant stabilized by a glycol
    1.
    发明授权
    Acidic aluminum cleaner containing an oxidant and a nonionic surfactant stabilized by a glycol 失效
    含有氧化剂和由二醇稳定的非离子表面活性剂的酸性铝清洁剂

    公开(公告)号：US5336425A

    公开(公告)日：1994-08-09

    申请号：US971924

    申请日：1992-12-21

    申请人： Tomoyuki Aoki ,  Yasuo Iino ,  Yoji Ono ,  Shinichiro Asai

    发明人： Tomoyuki Aoki ,  Yasuo Iino ,  Yoji Ono ,  Shinichiro Asai

    IPC分类号： C11D10/02 ,  C23G1/12 ,  C11D1/72 ,  C23F1/20 ,  C23F1/22

    CPC分类号： C23G1/125

    摘要： The stability of an acidic liquid cleaner for aluminum comprising mineral acid, oxidant, polyvalent metal ions, and surfactant is substantially improved by the presence in the cleaner of from 0.05 to 5 g/L of a component selected from the group of glycols containing from 2 to 10 carbon atoms per molecule and mixtures of such glycols. The effectiveness of the cleaner for primary cleaning and de-smutting of aluminum and its alloys is not impaired and may even be improved by the addition of the glycol component.

    摘要翻译： PCT No.PCT / US91 / 04263 Sec。 371日期：1993年12月21日 102（e）1993年12月21日的PCT日期1992年6月14日PCT。由含有无机酸，氧化剂，多价金属离子和表面活性剂的铝的酸性液体清洁剂的稳定性通过在 0.05至5g / L选自每分子含有2至10个碳原子的二醇的组分和这些二醇的混合物。 用于铝及其合金的初步清洁和去除的清洁剂的有效性不受损害，甚至可以通过加入二醇组分来改善。

    Method for cleaning aluminum and aluminum alloys
    2.
    发明授权
    Method for cleaning aluminum and aluminum alloys 失效
    铝和铝合金清洗方法

    公开(公告)号：US5382295A

    公开(公告)日：1995-01-17

    申请号：US64082

    申请日：1993-05-20

    申请人： Tomoyuki Aoki ,  Yoji Ono

    发明人： Tomoyuki Aoki ,  Yoji Ono

    IPC分类号： F28F13/18 ,  C23G1/22 ,  F28F19/02 ,  C11D7/06 ,  C23G1/14

    CPC分类号： C23G1/22

    摘要： An aqueous alkaline cleaner for aluminum has a pH in the range from 10.0-12.0 and contains:(A) from 0.5 to 10.0 g/L of an alkali builder component;(B) from 0.5 to 10.0 g/L of aminoalkyl- and/or hydroxyalkyldi-phosphonic acids and/or their water soluble salts;(C) from 0.1 to 3.0 g/L of an aluminum ion sequestering agent component; and(D) from 0.5 to 5.0 g/L of a surfactant component.Cleaning aluminum and aluminum alloy with such a cleaner generates an excellent surface condition with respect to de-smutting performance, water wettability, avoidance of black smut production, blackening, and paint adherence at least as good as that achieved with conventional acid cleaners, without requiring any acid wash.

    摘要翻译： PCT No.PCT / US91 / 08250 Sec。 371日期：1993年5月20日 102（e）日期1993年5月20日PCT 1991年11月12日PCT。用于铝的碱性水性碱性清洁剂的pH为10.0-12.0，含有：（A）0.5至10.0g / L的碱助洗剂 零件; （B）0.5至10.0g / L氨基烷基 - 和/或羟烷基二膦酸和/或其水溶性盐; （C）为0.1〜3.0g / L的铝离子螯合剂成分; 和（D）0.5-5.0g / L表面活性剂组分。 使用这种清洁剂清洁铝和铝合金，在去除斑点性能，水润湿性，避免黑色黑点生成，黑化和涂料粘附性方面产生极好的表面状况，至少与常规酸性清洁剂相同，不需要 任何酸洗。

    Fluoride and chromium free acid etchant rinse for aluminum
    3.
    发明授权
    Fluoride and chromium free acid etchant rinse for aluminum 失效
    氟化物和无铬铬酸蚀刻剂冲洗铝

    公开(公告)号：US4980076A

    公开(公告)日：1990-12-25

    申请号：US403625

    申请日：1989-09-06

    申请人： Shigeo Tanaka ,  Tomoyuki Aoki ,  Yasuo Iino ,  Yoji Ono

    发明人： Shigeo Tanaka ,  Tomoyuki Aoki ,  Yasuo Iino ,  Yoji Ono

    IPC分类号： C23G1/12

    CPC分类号： C23G1/125

    摘要： Problems with previously known aqueous acidic rinsing solutions for aluminum after shaping while using surface lubricants are avoided by use of a solution which contains water and (A) orthophosphoric acid in an amount to give a stoichiometric equivalent of 3.0 to 50 g/L as PO.sub.4.sup.-3, (B) an aluminum ion sequestrant component in an amount of 0.01 to 10.0 g/L; and (C) 20 to 170 ppm of ferric ion. The ferric ions act to inhibit corrosion of the stainless steel process equipment. Preferably the solution also contains 0.1 to 1.0 g/L of H.sub.2 O.sub.2, NO.sub.2.sup.-1 ions, or a mixture thereof to reoxidize ferrous ions formed by reduction of ferric ions during use of the solution and thus maintain the concentration of ferric ions above 20 ppm at all times. The solution may also contain surfactant and up to 10 g/L of dissolved aluminum ions.

    摘要翻译： 使用含有水的溶液和（A）正磷酸的量，通过使用表面润滑剂成型后的铝的先前已知的水性酸性漂洗溶液的问题可以避免，其量为化学计量当量为3.0〜50g / L，PO4- 3，（B）0.01〜10.0g / L的铝离子螯合剂成分; 和（C）20〜170ppm的铁离子。 铁离子用于抑制不锈钢工艺设备的腐蚀。 优选地，溶液还含有0.1至1.0g / L的H 2 O 2，NO 2 -1离子或其混合物，以在溶液的使用期间再氧化由铁离子还原形成的亚铁离子，并且因此将铁离子的浓度保持在20ppm以上 一直。 该溶液还可以含有表面活性剂和高达10g / L的溶解的铝离子。

    Semiconductor device and manufacturing method of semiconductor device
    5.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号：US08039353B2

    公开(公告)日：2011-10-18

    申请号：US12854060

    申请日：2010-08-10

    申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

    发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

    IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/78

    CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

    摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

    Manufacturing method of wiring board and semiconductor device
    9.
    发明申请
    Manufacturing method of wiring board and semiconductor device 有权
    接线板和半导体器件的制造方法

    公开(公告)号：US20070020932A1

    公开(公告)日：2007-01-25

    申请号：US11474934

    申请日：2006-06-27

    申请人： Junya Maruyama ,  Tomoyuki Aoki

    发明人： Junya Maruyama ,  Tomoyuki Aoki

    IPC分类号： H01L21/44

    CPC分类号： H05K3/205 ,  H01L2224/11 ,  H01L2924/12044 ,  H05K3/245 ,  H05K2203/0117 ,  Y10T29/49016 ,  Y10T29/49018 ,  Y10T29/49117 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49224 ,  H01L2924/00

    摘要： A manufacturing method of a wiring board and a semiconductor device at low cost and by a simple process, without performing complicated steps many times is proposed. Furthermore, a manufacturing method of a wiring board at low cost and with fewer adverse effects on the environment, and a manufacturing method of a semiconductor device using the wiring board are proposed. A pattern of a conductive material is formed over a first substrate, a conductive film is formed over the pattern by an electrolytic plating process, the pattern and the conductive film are separated, an IC chip including at least one thin film transistor is formed over a second substrate, and the conductive film is electrically connected to the IC chip.

    摘要翻译： 提出了一种以低成本和简单的方法制造布线板和半导体器件的方法，而不需要多次复杂的步骤。 此外，提出了一种低成本并且对环境的不利影响较少的布线板的制造方法以及使用该布线板的半导体装置的制造方法。 导电材料的图形形成在第一基板上，通过电解电镀工艺在图案上形成导电膜，图案和导电膜被分离，包括至少一个薄膜晶体管的IC芯片形成在 第二基板，并且导电膜电连接到IC芯片。