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47 条记录 (耗时 0.027 秒)

    P-type nitride semiconductor and method of manufacturing the same
    44.
    发明授权
    P-type nitride semiconductor and method of manufacturing the same 有权
    P型氮化物半导体及其制造方法

    公开(公告)号：US07056755B1

    公开(公告)日：2006-06-06

    申请号：US09680943

    申请日：2000-10-10

    申请人： Hidenori Kamei ,  Shuichi Shinagawa ,  Hidemi Takeishi

    发明人： Hidenori Kamei ,  Shuichi Shinagawa ,  Hidemi Takeishi

    IPC分类号： H01L21/205

    CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262

    摘要： A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by introducing the sources of p-type dopant, nitrogen and Group III sources on a substrate held at a temperature of 600° C. or higher and a cooling process for cooling the substrate which is bearing the p-type nitride semiconductor layer. The manufacturing method features in that the hole carrier concentration of the p-type nitride semiconductor layer decreases during the cooling process. A superior quality p-type nitride semiconductor is made available, without needing any annealing treatment after growth, by properly specifying the concentration of atmosphere gas and the cooling time.

    摘要翻译： 一种用于制造p型氮化物半导体的方法，其包括半导体层形成工艺，其中通过将p型掺杂剂，氮和III族源的源引入保持在基板上的基板上而在基板上形成低电阻率p型氮化物半导体层 600℃以上的温度和用于冷却承载有p型氮化物半导体层的基板的冷却工序。 制造方法的特征在于，在冷却过程中p型氮化物半导体层的空穴载流子浓度降低。 通过适当地指定气氛气体的浓度和冷却时间，可以获得优质的p型氮化物半导体，而不需要在生长后进行任何退火处理。

    Apparatus and method for forming semiconductor thin layer
    45.
    发明授权
    Apparatus and method for forming semiconductor thin layer 失效
    用于形成半导体薄层的装置和方法

    公开(公告)号：US6090211A

    公开(公告)日：2000-07-18

    申请号：US820390

    申请日：1997-03-12

    申请人： Hidenori Kamei ,  Hidemi Takeishi ,  Yasunari Oku

    发明人： Hidenori Kamei ,  Hidemi Takeishi ,  Yasunari Oku

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C30B25/14 ,  C23C16/00

    CPC分类号： C23C16/45574 ,  C23C16/4584 ,  C30B25/14

    摘要： A method and apparatus for forming a semiconductor thin layer on a substrate surface employs a gas outlet for supplying gas to the substrate, a rotatable holder for holding the substrate thereon such that a surface of the substrate is exposed to the gas while the substrate orbits with rotation of the holder, and a heater generates and supplies heat energy to the substrate. A cover wall extends over the surface of the substrate which is exposed to the gas. A distance between the exposed surface of the substrate and the cover wall in a direction parallel to a rotational axis of the rotatable holder decreases radially outward over the substrate orbiting with rotation of the holder about a rotational axis of the holder.

    摘要翻译： 用于在基板表面上形成半导体薄层的方法和装置采用用于向基板供应气体的气体出口，用于将基板保持在其上的可旋转保持器，使得基板的表面暴露于气体，同时基板以 保持器的旋转和加热器产生并向基板提供热能。 覆盖壁在衬底的暴露于气体的表面上延伸。 基板的暴露表面和盖壁之间的距离可以平行于旋转保持器的旋转轴线的方向径向向外延伸，在保持器围绕保持器的旋转轴线的旋转的作用下轨道运动。

    Semiconductor laser device
    46.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5436924A

    公开(公告)日：1995-07-25

    申请号：US286431

    申请日：1994-08-05

    申请人： Hidenori Kamei ,  Atsushi Miki

    发明人： Hidenori Kamei ,  Atsushi Miki

    IPC分类号： H01L29/06 ,  H01S5/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/2004 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/3434

    摘要： Successively formed on an n-type InP substrate are an n-type InP first clad layer 1, an undoped GainAsP first light guide layer 11, an active layer 3 of the multiple quantum well structure arranged with the number of wells being 5 to 10 and the radiation wavelength being about 1.3 .mu.m, an undoped GainAsP second light guide layer 12, and a p-type InP clad layer 2, which are processed to constitute a mesa-type active region. The width of the active layer 3 is not less than 0.7 .mu.m and not more than 1.0 .mu.m, whereby the spectral width can be made not more than 2.5 nm in the temperature range of -45.degree. to +85.degree. C.

    摘要翻译： 在n型InP衬底上连续形成n型InP第一覆盖层1，未掺杂的GainAsP第一导光层11，多量子阱结构的有源层3排列成孔数为5〜10， 辐射波长约1.3μm，未掺杂的GainAsP第二导光层12和p型InP包覆层2，其被处理以构成台面型有源区。 有源层3的宽度不小于0.7μm且不大于1.0μm，由此在-45℃至+ 85℃的温度范围内光谱宽度可以不大于2.5nm。

    Method of manufacturing a semiconductor laser
    47.
    发明授权
    Method of manufacturing a semiconductor laser 失效
    制造半导体激光的方法

    公开(公告)号：US5093278A

    公开(公告)日：1992-03-03

    申请号：US586226

    申请日：1990-09-21

    申请人： Hidenori Kamei

    发明人： Hidenori Kamei

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227

    CPC分类号： H01S5/227 ,  H01L33/0062 ,  H01S5/2081 ,  H01S5/2201 ,  H01S5/2275 ,  Y10S148/026 ,  Y10S148/051 ,  Y10S148/095 ,  Y10S148/119 ,  Y10S148/169 ,  Y10S438/978

    摘要： According to this invention, a first cladding layer of a first conductivity type, an active layer, a second cladding layer of a second conductivity type, and a cap layer much more susceptible to side etching than the second cladding layer susceptible to side etching than the second cladding layer are sequentially grown on a (100) crystal plane of a semiconductor substrate of the first conductivity type, and a stripe-like mask extending in a direction is formed on the grown substrate with respect to each layer of the stacked substrate. This etching is performed in a crystal orientation for forming a reverse triangular mesa. However, since the cap layer is made of a material susceptible to side etching, a rounded mesa is formed. Thereafter, when a burying layer is formed on the etched portion by a vapor phase epitaxy method, the burying layer can be made to have a flat surface depending on crystal orientations.