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41.发明申请公开(公告)号：US20090045419A1
公开(公告)日：2009-02-19
申请号：US12000064
申请日：2007-12-07
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L33/00
摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.
摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，第一半导体材料层，多层结构和欧姆电极结构。 基板具有形成在第一上表面上的第一上表面和多个凹部。 第一半导体材料层形成在基板的第一上表面上并具有第二上表面。 多层结构形成在第一半导体材料层的第二上表面上并且包括发光区域。 欧姆电极结构形成在多层结构上。 特别地，第一半导体材料层的折射率与基板和多层结构的最底层的折射率不同。
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公开(公告)号：US20080188021A1
公开(公告)日：2008-08-07
申请号：US12031508
申请日：2008-02-14
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L21/02
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括发光结构和金属反射层。 发光结构包括两个半导体层和有源层。 将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。 此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。
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公开(公告)号：US07355209B2
公开(公告)日：2008-04-08
申请号：US11316437
申请日：2005-12-22
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L27/15
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括发光结构和金属反射层。 发光结构包括两个半导体层和有源层。 将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。 此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。
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公开(公告)号：US07067340B1
公开(公告)日：2006-06-27
申请号：US11142082
申请日：2005-05-31
IPC分类号： H01L21/66
CPC分类号： H01L33/0079 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05169 , H01L2224/05184 , H01L2224/05568 , H01L2224/16 , H01L2924/00014 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599
摘要： A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely. Then, a mesa-etching process is performed to form a first top surface and a second top surface on the light emitting diode epitaxy structure for respectively exposing an n-type layer and a p-type layer in the light emitting diode epitaxy structure. Next, a metal reflective layer and a barrier layer are formed on the light emitting diode epitaxy structure in turn, and electrodes are finally fabricated on the barrier layer.
摘要翻译： 公开了一种倒装芯片发光二极管及其制造方法。 使用柔软的透明粘合剂层通过透明导电衬底到衬底上的发光二极管外延结构上，然后完全去除衬底。 然后，进行台面蚀刻工艺以在发光二极管外延结构上形成第一顶表面和第二顶表面，以分别暴露发光二极管外延结构中的n型层和p型层。 接下来，依次在发光二极管外延结构上形成金属反射层和阻挡层，最后在阻挡层上制造电极。
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公开(公告)号：US07012281B2
公开(公告)日：2006-03-14
申请号：US10695807
申请日：2003-10-30
CPC分类号： H01L33/387 , H01L33/42
摘要： A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.
摘要翻译： 发光二极管器件及其制造方法包括透光导电层和图案化的透明导电层。 根据本发明，透光导电层和图案化的透明导电层在LED器件上方扩展到最佳区域，以提高LED器件的透明度和欧姆性能。
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公开(公告)号：US06504183B1
公开(公告)日：2003-01-07
申请号：US09659015
申请日：2000-09-08
申请人： Chih-Sung Chang , Tzong-Liang Tsai
发明人： Chih-Sung Chang , Tzong-Liang Tsai
IPC分类号： H01L3300
CPC分类号： H01L33/12 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/16
摘要： The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.
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公开(公告)号：US08288181B2
公开(公告)日：2012-10-16
申请号：US12833648
申请日：2010-07-09
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译： 公开了一种发光二极管及其制造方法。 在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。 然后用透明电介质材料填充凹部。 粘合层用于粘附导电衬底和发光二极管外延结构。 接下来，去除衬底。
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公开(公告)号：US07737453B2
公开(公告)日：2010-06-15
申请号：US11744226
申请日：2007-05-04
申请人： Tzong-Liang Tsai , Chi-Shen Lee , Ting-Kai Huang
发明人： Tzong-Liang Tsai , Chi-Shen Lee , Ting-Kai Huang
IPC分类号： H01L29/205
CPC分类号： H01L33/14 , H01L29/2003 , H01L33/02 , H01L33/32
摘要： Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an upper confinement layer formed on the light emitting layer, a Constructive Oxide Contact Structure contact layer formed on the upper confinement layer whose conducting type can be P-type, N-type, or I-type, a first electrode, and a second electrode (transparent electrode). The transparent electrode is formed on the Constructive Oxide Contact Structure contact layer as an anode of the light emitting diode. The first electrode is formed on the lower confinement layer and is spaced apart from the light emitting layer, the upper confinement layer, the contact layer, and the transparent electrode. The first electrode is used as a cathode of the light emitting diode.
摘要翻译： 公开了包括构造氧化物接触结构接触层的发光二极管结构。 发光二极管结构包括衬底，形成在衬底上的缓冲层，形成在缓冲层上的下限制层，形成在下限制层上的发光层，形成在发光层上的上约束层， 形成在导电型可以是P型，N型或I型的上部限制层上的构造性氧化物接触结构接触层，第一电极和第二电极（透明电极）。 透明电极形成在作为发光二极管的阳极的构造氧化物接触结构接触层上。 第一电极形成在下限制层上并与发光层，上约束层，接触层和透明电极间隔开。 第一电极用作发光二极管的阴极。
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公开(公告)号：US07652302B2
公开(公告)日：2010-01-26
申请号：US11108966
申请日：2005-04-19
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.
摘要翻译： 提供一种发光二极管及其制造方法。 在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。 然后用透明电介质材料填充凹部。 依次形成欧姆接触层和反射层，然后进行蚀刻以露出透明电介质材料。 最后，形成粘合导电复合层以将欧姆接触层和反射层固定在发光二极管外延结构上。
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公开(公告)号：US07498185B2
公开(公告)日：2009-03-03
申请号：US12031508
申请日：2008-02-14
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括发光结构和金属反射层。 发光结构包括两个半导体层和有源层。 将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。 此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。
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