公开(公告)号：US20100193891A1

公开(公告)日：2010-08-05

申请号：US12756743

申请日：2010-04-08

Applicant: Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

Inventor： Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

IPC: H01L29/82

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L43/08 ,  H01L43/12

Abstract: A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.

Abstract translation: 形成集成电路的方法包括形成磁隧道结（MTJ）层; 蚀刻MTJ层以形成MTJ电池; 以及在MTJ电池的侧壁上形成电介质覆盖层，其中形成电介质覆盖层的步骤是用蚀刻MTJ层的步骤进行的。

公开(公告)号：US07692230B2

公开(公告)日：2010-04-06

申请号：US11674581

申请日：2007-02-13

Applicant: Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

Inventor： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC: H01L27/108

CPC classification number: H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

Abstract: Disclosed herein is an improved memory device wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

Abstract translation: 这里公开了一种改进的存储装置，其中由常规着陆垫占据的面积显着地减小到常规着陆垫占据的面积的大约50％至10％。 这是通过从电池结构中移除着陆焊盘而实现的，而是形成导电通孔结构，其提供从结构中的存储器堆或器件到下金属层的电连接。 通过仅形成该通孔结构，而不是形成在着陆焊盘的任一侧上的分离的通孔，结构通孔结构从存储器堆叠到下金属层占据的总宽度大大减小，因此通孔结构和下面 金属层可以形成为更靠近存储器堆叠（或与堆叠相关联的导体），以便减小电池结构的整体宽度。

公开(公告)号：US07688616B2

公开(公告)日：2010-03-30

申请号：US11764618

申请日：2007-06-18

Applicant: Yu-Jen Wang ,  Hsu-Chen Chang ,  Denny Tang

Inventor： Yu-Jen Wang ,  Hsu-Chen Chang ,  Denny Tang

IPC: G11C11/00

CPC classification number: G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

Abstract: Thus, the present disclosure provides a method of programming a memory array. At least one memory cell including a magnetic element is provided. At least one current source coupled to the magnetic element is provided. A unipolar current is supplied from the at least one current source to the magnetic element at a plurality of non-zero current levels.

Abstract translation: 因此，本公开提供了一种对存储器阵列进行编程的方法。 提供包括磁性元件的至少一个存储单元。 提供耦合到磁性元件的至少一个电流源。 单极电流从多个非零电流电平从至少一个电流源提供给磁性元件。

公开(公告)号：US07683447B2

公开(公告)日：2010-03-23

申请号：US11854478

申请日：2007-09-12

Applicant: Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

Inventor： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

IPC: H01L29/92

CPC classification number: B82Y10/00 ,  G11C11/15 ,  H01L27/228

Abstract: A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.

Abstract translation: 一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

公开(公告)号：US20100067169A1

公开(公告)日：2010-03-18

申请号：US12209210

申请日：2008-09-12

Applicant: Yu-Jen Wang

Inventor： Yu-Jen Wang

IPC: H01G4/002

CPC classification number: H01L23/5223 ,  H01L27/0207 ,  H01L28/87 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A capacitor structure is disclosed. The capacitor structure includes at least a D1+ first-level array. The D1+ first-level array comprises three first D1+ conductive pieces and a second D1+ conductive piece. Two of the first D1+ conductive pieces are disposed in a first row of the D1+ first-level array, and the remaining first D1+ conductive piece and the second D1+ conductive piece are disposed in a second row of the D1+ first-level array from left to right. The adjacent first D1+ conductive pieces are connected to each other, and the first D1+ conductive pieces are not connected to the second D1+ conductive piece.

Abstract translation: 公开了一种电容器结构。 电容器结构至少包括一个D1 +一级阵列。 D1 +第一级阵列包括三个第一D1 +导电片和第二D1 +导电片。 第一D1 +导电片中的两个被布置在D1 +第一电平阵列的第一行中，并且剩余的第一D1 +导电片和第二D1 +导电片从左至右布置在D1 +第一电平阵列的第二行中 对。 相邻的第一D1 +导电片彼此连接，并且第一D1 +导电片不连接到第二D1 +导电片。

公开(公告)号：US20090141232A1

公开(公告)日：2009-06-04

申请号：US12266546

申请日：2008-11-06

Applicant: Rung-Sheng Cheng ,  Yu-Jen Wang ,  Chien-Shien Yeh ,  Chao-Chang Hu

Inventor： Rung-Sheng Cheng ,  Yu-Jen Wang ,  Chien-Shien Yeh ,  Chao-Chang Hu

IPC: G02F1/1333 ,  G02F1/13 ,  G02B15/04

CPC classification number: G02B15/04 ,  G02B3/14 ,  G02B27/0025 ,  G02F1/29 ,  G02F2001/294

Abstract: An optical lens module includes a support frame, a liquid crystal lens group, and a aberration compensation lens group. The aberration compensation lens compensates aberrations generated by the liquid crystal lenses. The liquid crystal lens group and the fixed aberration compensation lens group are disposed on the same optical axis. The optical lens module is power-saving, easily assembling, and has a small volume, which is helpful for miniaturizing and thinning optical lens modules, and thus further helpful for miniaturizing and thinning small-size or portable devices.

Abstract translation: 光学透镜模块包括支撑框架，液晶透镜组和像差补偿透镜组。 像差补偿透镜补偿由液晶透镜产生的像差。 液晶透镜组和固定像差补偿透镜组设置在相同的光轴上。 光学透镜模块省电，容易组装，体积小，有助于光学透镜模块的小型化和薄型化，从而进一步有助于小型化和小型化或便携式设备的小型化和薄型化。

公开(公告)号：US20090085132A1

公开(公告)日：2009-04-02

申请号：US11863130

申请日：2007-09-27

Applicant: Ya Chen Kao ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hsu-Chen Cheng ,  Feng-Jia Shiu ,  Yung-Tao Lin

Inventor： Ya Chen Kao ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hsu-Chen Cheng ,  Feng-Jia Shiu ,  Yung-Tao Lin

IPC: H01L29/82

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01L43/08

Abstract: A MRAM cell structure includes a bottom electrode; a magnetic tunnel junction unit disposed on the bottom electrode; a top electrode disposed on the magnetic tunnel junction unit; and a blocking layer disposed on the top electrode, wherein the blocking layer is wider than the magnetic tunnel junction unit for preventing against formation of a short circuit between a contact and the magnetic tunnel junction unit.

Abstract translation: MRAM单元结构包括底电极; 设置在所述底部电极上的磁性隧道结单元; 设置在磁隧道结单元上的顶电极; 以及设置在所述顶部电极上的阻挡层，其中所述阻挡层比所述磁性隧道结单元宽，以防止在触点和所述磁性隧道结单元之间形成短路。

公开(公告)号：US20090065883A1

公开(公告)日：2009-03-12

申请号：US11854478

申请日：2007-09-12

Applicant: Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

Inventor： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

IPC: H01L29/82 ,  H01L21/00

CPC classification number: B82Y10/00 ,  G11C11/15 ,  H01L27/228

Abstract: A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.

Abstract translation: 一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

公开(公告)号：USD583046S1

公开(公告)日：2008-12-16

申请号：US29303228

申请日：2008-02-04

Applicant: Ming-Te Ku ,  Hsin-Kun Ho ,  Mao-Lung Chen ,  Ming-Chieh Tsai ,  Yu-Jen Wang ,  Yi-Cheng Chen

Designer： Ming-Te Ku ,  Hsin-Kun Ho ,  Mao-Lung Chen ,  Ming-Chieh Tsai ,  Yu-Jen Wang ,  Yi-Cheng Chen

公开(公告)号：US20070253244A1

公开(公告)日：2007-11-01

申请号：US11380777

申请日：2006-04-28

Applicant: Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

Inventor： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

IPC: G11C11/14

CPC classification number: G11C11/16 ,  G11C29/50 ,  G11C2029/5002

Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

Abstract translation: 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。