利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

53 条记录 (耗时 0.033 秒)

    Method of forming deposition film
    41.
    发明授权
    Method of forming deposition film 失效
    形成沉积膜的方法

    公开(公告)号：US4683147A

    公开(公告)日：1987-07-28

    申请号：US722468

    申请日：1985-04-12

    申请人： Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    发明人： Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/22 ,  C23C16/48 ,  H01L21/205

    CPC分类号： B05D1/60 ,  C23C16/22 ,  C23C16/482 ,  C23C16/483 ,  C23C16/488 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  B05D3/06

    摘要： A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.2b (wherein X is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si.sub. c X.sub.d Y.sub.e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) representing a cyclic halogenated silicon compound; (E) Si.sub.f Y.sub.g Y.sub.h (X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are integers of not less than 1, and g+h=2f+2) representing a chain halogenated silicon compound; and (F) Si.sub.i H.sub.j X.sub.k (wherein X is a halogen atom, i,j and k are integers of not less than 1, and j+k=2i+2) representing a silicon compound.

    摘要翻译： 一种形成沉积在基底上的含硅膜的方法，其包括以下步骤：形成至少一种选自以下通式（A），（B），（C ），（D），（E）和（F），并且向化合物施加光能以排出和分解化合物。 通式（A） - （F）的化合物定义如下：（A）SinHmX1（其中X是卤素原子，n是不小于3的整数，m和l是不小于1的整数 分别为m + 1 = 2n;如果l为不小于2的整数，多个X可以表示不同的卤原子），代表环状硅化合物; （B）代表链卤化硅化合物的SiaX2a + 2（其中X是卤素原子，a是1至6的整数）; （C）表示环状卤代硅化合物的SibX2b（其中，X为卤素原子，b为3〜6的整数） （D）Si cXdYe（其中X和Y是不同的卤素原子，c是3至6的整数，d和e是不小于1的整数，d + e = 2c）表示环状卤化硅化合物; （E）SifYgYh（X和Y是不同的卤素原子，f是1至6的整数，g和h是不小于1的整数，g + h = 2f + 2）代表链卤化硅化合物; 和（F）SiiHjXk（其中X是卤素原子，i，j和k是不小于1的整数，j + k = 2i + 2）表示硅化合物。

    Method for forming a deposited film
    42.
    发明授权
    Method for forming a deposited film 失效
    沉积膜形成方法

    公开(公告)号：US4683144A

    公开(公告)日：1987-07-28

    申请号：US722133

    申请日：1985-04-11

    申请人： Yukuo Nishimura ,  Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yutaka Hirai ,  Takashi Nakagiri

    发明人： Yukuo Nishimura ,  Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yutaka Hirai ,  Takashi Nakagiri

    IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/22 ,  C23C16/48 ,  H01L21/205

    CPC分类号： B05D1/60 ,  C23C16/22 ,  C23C16/482 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  B05D3/06

    摘要： A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate.A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.

    摘要翻译： 形成沉积膜的方法包括在沉积室中形成由通式SinH2n + 2（n> / = 1）表示的硅烷化合物和卤素化合物的气体气氛，其中衬底被排列， 通过利用光能分解这些化合物，从而在所述衬底上形成含有硅原子的沉积膜。 形成沉积膜的方法包括形成由以下通式表示的硅烷化合物的气态气氛：SinH2n + 2（n> / = 1），卤素化合物和含有属于III族或第V族的原子的化合物 在其中布置基板的沉积室中，通过利用光能来激发和分解这些化合物，从而形成含有硅原子和属于周期表第III族或第V族的原子的沉积膜 在所述基板上。

    Method of forming deposition film
    43.
    发明授权
    Method of forming deposition film 失效
    形成沉积膜的方法

    公开(公告)号：US4569855A

    公开(公告)日：1986-02-11

    申请号：US722132

    申请日：1985-04-11

    申请人： Hiroshi Matsuda ,  Masahiro Haruta ,  Ken Eguchi ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    发明人： Hiroshi Matsuda ,  Masahiro Haruta ,  Ken Eguchi ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    IPC分类号： C23C16/24 ,  H01L21/205 ,  B05D3/06

    CPC分类号： C23C16/24 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for forming a deposition film, wherein a gaseous atmosphere of a silicon compound selected from(i) a silicon compound having at least one azo group directly bonded to a silicon atom and(ii) a silicon compound having at least one azide group directly bonded to a silicon atomis formed in a deposition chamber in which a substrate is placed, said compound is excited and decomposed utilizing light energy, and a deposition film containing silicon atoms is formed on said substrate.A compound containing atoms of a group III element or a group V element of the Periodic Table may be included in the atmosphere in the deposition chamber, the compounds excited and decomposed utilizing light energy, and a deposition film containing silicon atoms and the atoms in the group III or V element of the Periodic Table formed on said substrate.

    摘要翻译： 一种用于形成沉积膜的方法，其中选自（i）具有至少一个与硅原子键合的偶氮基的硅化合物的硅化合物的气体气氛和（ii）直接与至少一个叠氮基的硅化合物 在其中放置基板的沉积室中形成与硅原子键合，所述化合物利用光能被激发和分解，并且在所述衬底上形成含有硅原子的沉积膜。 含有元素周期表第Ⅲ族元素或第V族元素的化合物的化合物可以包含在沉积室中的气氛中，利用光能激发和分解的化合物以及含有硅原子的沉积膜和 在所述衬底上形成的周期表的III族或V族元素。

    Bubble jet recording apparatus which projects droplets of liquid through generation of bubbles in a liquid flow path by using heating means responsive to recording signals
    46.
    发明授权
    Bubble jet recording apparatus which projects droplets of liquid through generation of bubbles in a liquid flow path by using heating means responsive to recording signals 失效
    气泡喷射记录装置，其通过使用响应于记录信号的加热装置在液体流路中产生气泡而突出液滴

    公开(公告)号：US4849774A

    公开(公告)日：1989-07-18

    申请号：US151281

    申请日：1988-02-01

    申请人： Ichiro Endo ,  Yasushi Sato ,  Seiji Saito ,  Takashi Nakagiri ,  Shigeru Ohno

    发明人： Ichiro Endo ,  Yasushi Sato ,  Seiji Saito ,  Takashi Nakagiri ,  Shigeru Ohno

    IPC分类号： B41J2/05 ,  B41J2/135 ,  B41J2/195 ,  B41J2/21

    CPC分类号： B41J2/0458 ,  B41J2/04593 ,  B41J2/195 ,  B41J2/2128

    摘要： A bubble jet recording apparatus comprises an inlet for accepting a liquid to be delivered to an outlet orifice through a liquid flow path. Liquid is supplied to the inlet for flow through the liquid flow path to a heating element, which heats liquid in the liquid flow path in response to recording signals. Heating is sufficient to cause a change of state of the liquid (that is, to generate a bubble) and produce a force acting on the liquid which overcomes the surface tension of liquid at the orifice and thereby projects a droplet of liquid from the orifice. The temperature of the heating element is raised at each actuation to a temperature above the maximum temperature at which the liquid is heated so as to promote substantially instantaneous transfer of heat to the liquid proximate to the heating element and to retard the transfer of heat from the heating element to liquid at other locations in the liquid floor path.

    摘要翻译： 气泡喷射记录装置包括用于接收通过液体流动路径输送到出口孔的液体的入口。 液体被供应到入口以通过液体流动路径流到加热元件，加热元件响应于记录信号加热液体流动路径中的液体。 加热足以引起液体状态的变化（即产生气泡）并产生作用在液体上的力，其克服了孔处液体的表面张力，从而从孔突出液滴。 加热元件的温度在每次致动时升高到高于液体被加热的最高温度的温度，从而促使热量基本上瞬间传递到靠近加热元件的液体，并阻止热量从 在液体地板路径中的其他位置处将元件加热到液体。

    Device and method for measuring optical properties
    47.
    发明授权
    Device and method for measuring optical properties 失效
    用于测量光学特性的装置和方法

    公开(公告)号：US4790664A

    公开(公告)日：1988-12-13

    申请号：US897055

    申请日：1986-08-15

    申请人： Kenji Saito ,  Ken Eguchi ,  Haruki Kawada ,  Yoshinori Tomida ,  Takashi Nakagiri ,  Yukuo Nishimura ,  Kiyoshi Takimoto

    发明人： Kenji Saito ,  Ken Eguchi ,  Haruki Kawada ,  Yoshinori Tomida ,  Takashi Nakagiri ,  Yukuo Nishimura ,  Kiyoshi Takimoto

    IPC分类号： G01N21/17 ,  G01N21/84 ,  G01N21/00

    CPC分类号： G01N21/171 ,  G01N21/8422

    摘要： A device for measuring optical properties is provided which is equipped with an exciting light source for emitting exciting light to the sites to be measured of a sample, a light intensity modulator for modulating the exciting light, a probe light source for emitting probe light and a detector for receiving the probe light. The device is characterized by comprising an intensity distribution modifying means for bringing the maximum intensity portion of said probe light close to the sample when the probe light emitted from the probe light source reaches the site to be measured or the vicinity thereof. A method for measuring optical properties using the device is also provided. This device is useful particularly for measurement of the light absorption characteristics of a monomolecular film spread on a liquid surface.

    摘要翻译： 提供了一种用于测量光学特性的装置，该装置配备有用于将激发光发射到待测样品的位置的激发光源，用于调制激发光的光强度调制器，用于发射探测光的探测光源和 探测器用于接收探测灯。 该装置的特征在于包括强度分布修改装置，用于当从探测光源发射的探测光光源到达要测量的位置或其附近时，将所述探测光的最大强度部分接近样本。 还提供了使用该装置测量光学性质的方法。 该装置特别用于测量在液面上扩散的单分子膜的光吸收特性。