公开(公告)号：US09006747B2

公开(公告)日：2015-04-14

申请号：US14240719

申请日：2012-08-27

Applicant: Tomoaki Hatayama ,  Hidenori Koketsu ,  Yoshihiro Todokoro

Inventor： Tomoaki Hatayama ,  Hidenori Koketsu ,  Yoshihiro Todokoro

IPC: H01L29/15 ,  H01L21/306 ,  H01L29/04 ,  H01L29/16 ,  H01L21/3065 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L21/04 ,  H01L29/10 ,  H01L21/308

CPC classification number: H01L21/30604 ,  H01L21/0475 ,  H01L21/30617 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/045 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7813

Abstract: Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from −8° to 8° in the direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800° C. with nitrogen gas as the carrier.

Abstract translation: 提供了简单地形成特定晶体表面的技术，例如在沟槽侧壁中具有高载流子迁移率的{03-38}表面，以及适合于沟道部件的大多数沟槽侧壁的SiC半导体元件由{03-38 }表面。 提供了形成在（0001）表面或（0001）表面的偏移角为8°或更小的SiC的表面的（0001）表面的沟槽结构。 通道构件处于沟槽结构。 通道构件的面积的至少90％是{03-38}表面或{01-38}表面在<1-100>方向偏移-8°至8°的角度的表面。 具体地说，通过对具有SiC的（0001）表面的沟槽进行热蚀刻，将沟槽侧壁完成到{03-38}表面。 用氮气作为载体，在800℃以上的氯气氛中进行热蚀刻。

公开(公告)号：US20140203300A1

公开(公告)日：2014-07-24

申请号：US14240719

申请日：2012-08-27

Applicant: Tomoaki Hatayama ,  Hidenori Koketsu ,  Yoshihiro Todokoro

Inventor： Tomoaki Hatayama ,  Hidenori Koketsu ,  Yoshihiro Todokoro

IPC: H01L21/306 ,  H01L29/04 ,  H01L29/16 ,  H01L29/10

CPC classification number: H01L21/30604 ,  H01L21/0475 ,  H01L21/30617 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/045 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7813

Abstract: Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from −8° to 8° in the direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800° C. with nitrogen gas as the carrier.

Abstract translation: 提供了简单地形成特定晶体表面的技术，例如在沟槽侧壁中具有高载流子迁移率的{03-38}表面，以及适合于沟道部件的大多数沟槽侧壁的SiC半导体元件由{03-38 }表面。 提供了形成在（0001）表面或（0001）表面的偏移角为8°或更小的SiC的表面的（0001）表面的沟槽结构。 通道构件处于沟槽结构。 通道构件的面积的至少90％是{03-38}表面或{01-38}表面在<1-100>方向偏移-8°至8°的角度的表面。 具体地说，通过对具有SiC的（0001）表面的沟槽进行热蚀刻，将沟槽侧壁完成到{03-38}表面。 用氮气作为载体，在800℃以上的氯气氛中进行热蚀刻。

公开(公告)号：US20130285069A1

公开(公告)日：2013-10-31

申请号：US13818810

申请日：2011-08-12

Applicant: Hiroshi Yano ,  Yoshihiro Ueoka

Inventor： Hiroshi Yano ,  Yoshihiro Ueoka

IPC: H01L29/16

CPC classification number: H01L29/1608 ,  H01L21/049 ,  H01L29/045 ,  H01L29/7802 ,  H01L29/7813

Abstract: The invention provides an SiC semiconductor element having fewer interface defects at the interface between the SiC and the insulating film of the SiC semiconductor, as well as improved channel mobility. The semiconductor element is provided with at least an SiC semiconductor substrate and an insulating film in contact with the substrate, wherein the insulating film is formed on a specific crystal plane of the SiC semiconductor substrate, the specific crystal plane being a plane having an off-angle of 10-20° relative to the {11-20} plane toward the [000-1] direction or at an off-angle of 70-80° relative to the (000-1) plane toward the direction. Through the use of a specific crystal plane unknown in the prior art, interface defects between the SiC semiconductor substrate and the insulating film can be reduced, and channel mobility of the semiconductor element can be improved.

Abstract translation: 本发明提供一种在SiC与SiC半导体的绝缘膜之间的界面处具有较少界面缺陷的SiC半导体元件，以及改进的沟道迁移率。 所述半导体元件至少设置有与所述基板接触的SiC半导体基板和绝缘膜，其中，所述绝缘膜形成在所述SiC半导体基板的特定的晶面上，所述特定的晶面为具有断开的平面， 相对于{11-20}平面朝向[000-1]方向为10-20°的角度或相对于（000-1）面朝向<11-20>的偏离角为70-80°的角度， 方向。 通过使用现有技术中未知的特定晶面，可以降低SiC半导体衬底和绝缘膜之间的界面缺陷，并且可以提高半导体元件的沟道迁移率。

公开(公告)号：US20130236947A1

公开(公告)日：2013-09-12

申请号：US13786989

申请日：2013-03-06

Applicant: National University Corporation Nara Institute of Science and Technology ,  TOKYO OHKA KOGYO CO., LTD.

Inventor： Masanobu Naito ,  Yusuke Nakamura ,  Toshiyuki Ogata ,  Toshikazu Takayama ,  Takayuki Hosono

IPC: B05D7/24 ,  C09D7/12

CPC classification number: B05D7/24 ,  C09K19/02 ,  Y10T428/24736

Abstract: A substrate having rod-like molecules on a surface thereof including: a substrate in which a pattern including a convex portion with a flat upper surface is formed on at least a portion thereof; and a plurality of rod-like molecules, which are formed into rod-like shape, are aligned in line in a direction crossing a molecular length direction of each of the rod-like molecules an the upper surface of the convex portion, and have liquid crystalline states, wherein the molecular length LR of the rod-like molecule is 2.0 or less times LN, which is a length of the rod-like molecule in the molecular length direction within the convex portion; and a method for producing a substrate having rod-like molecules on a surface thereof.

Abstract translation: 在其表面上具有棒状分子的基板包括：基板，其中在其至少一部分上形成包括具有平坦上表面的凸起部分的图案; 并且形成为棒状形状的多个棒状分子在与棒状分子的分子长度方向交叉的方向上与凸部的上表面一致地排列，并且具有液体 结晶状态，其中棒状分子的分子长度LR为凸起部分内的分子长度方向上的棒状分子的长度的2.0倍以下的LN; 以及在其表面上制造具有棒状分子的基板的方法。

公开(公告)号：US08488806B2

公开(公告)日：2013-07-16

申请号：US12593928

申请日：2008-03-26

Applicant: Hiroshi Saruwatari ,  Eiji Baba ,  Hiromitsu Mori

Inventor： Hiroshi Saruwatari ,  Yoshimitsu Mori ,  Eiji Baba

IPC: H04B15/00

CPC classification number: G10L21/028

Abstract: A separation signal generation unit generates a plurality of separation signals which are independent from one another from the mixed signals for one frame which are converted into those in a frequency region. A mask processing unit judges a noise condition of a first separation signal for each frequency bin on the basis of the first separation signal and second separation signals. The mask processing unit further removes a first noise component obtained on the basis of a judgment result on the noise condition from the first separation signal. A noise amount measuring unit measures the amount of noise in the first separation signal. A noise signal selection unit selects a noise signal for each frequency bin on the basis of the amount of noise measured by the noise amount measuring unit. A noise removing unit removes a second noise component from a noise removal signal inputted from the mask processing unit. The noise removing unit outputs the noise removal signal obtained by removing the second noise component as a target signal.

Abstract translation: 分离信号生成单元从一帧的混合信号生成彼此独立的多个分离信号，该混合信号被转换成频率区域的混合信号。 掩模处理单元基于第一分离信号和第二分离信号来判断每个频率仓的第一分离信号的噪声条件。 掩模处理单元还基于来自第一分离信号的噪声条件的判定结果，去除获得的第一噪声分量。 噪声量测量单元测量第一分离信号中的噪声量。 噪声信号选择单元基于由噪声量测量单元测量的噪声量来选择每个频率仓的噪声信号。 噪声去除单元从从掩模处理单元输入的噪声去除信号中去除第二噪声分量。 噪声去除单元输出通过去除第二噪声分量而获得的噪声去除信号作为目标信号。

公开(公告)号：US08452592B2

公开(公告)日：2013-05-28

申请号：US12921974

申请日：2008-09-02

Applicant: Tomoya Takatani ,  Jani Even

Inventor： Tomoya Takatani ,  Jani Even

IPC: G10L21/02

CPC classification number: H04S1/007 ,  G10L21/0272

Abstract: Provided are a signal separating apparatus and a signal separating method capable of solving the permutation problem and separating user speech to be extracted. The signal separating apparatus separates a specific speech signal and a noise signal from a received sound signal. First, a joint probability density distribution estimation unit of a permutation solving unit calculates joint probability density distributions of the respective separated signals. Then, a classifying determination unit of the permutation solving unit determines classifying based on shapes of the calculated joint probability density distributions.

Abstract translation: 提供了能够解决置换问题并分离要提取的用户语音的信号分离装置和信号分离方法。 信号分离装置从接收到的声音信号中分离特定语音信号和噪声信号。 首先，置换求解单元的联合概率密度分布估计单元计算各个分离信号的联合概率密度分布。 然后，置换求解单元的分类确定单元基于所计算的联合概率密度分布的形状来确定分类。

公开(公告)号：US20130126904A1

公开(公告)日：2013-05-23

申请号：US13658672

申请日：2012-10-23

Applicant: Sumitomo Electric Industries, Ltd. ,  National University Corporation Nara Institute of

Inventor： Takeyoshi MASUDA ,  Tomoaki HATAYAMA

IPC: H01L29/24 ,  H01L21/28

CPC classification number: H01L29/7813 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

Abstract: A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.

Abstract translation: 碳化硅层包括具有第一导电类型的第一区域，设置在第一区域上并具有第二导电类型的第二区域，以及设置在第二区域上并具有第一导电类型的第三区域。 具有内表面的沟槽形成在碳化硅层中。 沟槽穿透第二和第三区域。 沟槽的内表面具有位于比第一侧壁更深的第一侧壁和第二侧壁，并且具有由第二区域制成的部分。 第一侧壁的倾斜小于第二侧壁的倾斜度。

公开(公告)号：US20130116189A1

公开(公告)日：2013-05-09

申请号：US13703477

申请日：2011-06-15

Applicant: Masao Tanihara ,  Kana Takaichi ,  Mariko Maeda ,  Tsukasa Mitsui ,  Kazushi Yamamoto ,  Akiko Hirano

Inventor： Masao Tanihara ,  Kana Takaichi ,  Mariko Maeda ,  Tsukasa Mitsui ,  Kazushi Yamamoto ,  Akiko Hirano

IPC: C07K14/78 ,  A61Q19/08 ,  A61Q19/00 ,  C07K1/107 ,  A61K8/67

CPC classification number: C07K14/78 ,  A61K8/671 ,  A61K31/07 ,  A61K38/39 ,  A61Q1/00 ,  A61Q1/02 ,  A61Q1/12 ,  A61Q5/02 ,  A61Q5/12 ,  A61Q19/00 ,  A61Q19/08 ,  A61Q19/10 ,  C07K1/1077

Abstract: Disclosed is a compound which exhibits a higher effect of preventing wrinkle formation, a higher effect of improving wrinkles, a higher effect of making the skin beautiful, and a higher effect of improving skin quality than conventional retinol and retinol derivatives in a sustained manner. Further disclosed are a method for producing the same, and an external composition for the skin and a sheet-shaped cosmetic each containing the same as an active ingredient. More specifically disclosed are retinol-modified collagen in which a dicarboxylic acid is attached to at least one hydroxyl group of collagen and retinol is attached to a carboxyl group of at least one attached dicarboxylic acid, a method for producing the same, and an external composition for the skin and a sheet-shaped cosmetic each containing the same as an active ingredient.

Abstract translation: 本发明公开了一种化合物，其具有比常规视黄醇和视黄醇衍生物持续的更好的防止皱纹形成的效果，提高皱纹的效果，使皮肤美丽的效果更高，并且提高皮肤质量的效果。 进一步公开了其制造方法，以及用于皮肤的外用组合物和各自含有活性成分的片状化妆品。 更具体地公开了视黄醇改性的胶原，其中二羧酸附着在至少一个胶原的羟基上，视黄醇与至少一个连接的二羧酸的羧基相连，其制备方法和外用组合物 对于皮肤和每个含有与活性成分相同的片状化妆品。

公开(公告)号：US08149236B2

公开(公告)日：2012-04-03

申请号：US11989768

申请日：2006-07-18

Applicant: Megumi Nakao ,  Kotaro Minato

Inventor： Megumi Nakao ,  Kotaro Minato

IPC: G06T15/00

CPC classification number: G06T19/00 ,  A61B5/055 ,  A61B6/03 ,  A61B6/466 ,  G06T15/08 ,  G06T2219/008 ,  G06T2219/2021

Abstract: Conventional information processing apparatuses have the problem of not being able to easily extract and observe a three-dimensional region of interest from 3D voxel data. The present invention provides an information processing apparatus in which a first slice information group, which is multiple pieces of slice information obtained as a result of extraction from 3D voxel information using a first three-dimensional region mask extracting the 3D voxel information, is stored, wherein the information processing apparatus: receives input regarding a second three-dimensional region mask; acquires second mesh information constituting the second three-dimensional region mask; determines an internal region, which is a region inside the second mesh information, and an external region, which is a region outside the second mesh information, for each slice information in the first slice information group, based on the second mesh information; and outputs the first slice information group such that the internal region and the external region are visually distinguished from each other. With this information processing apparatus, it is possible to easily extract and observe a three-dimensional region of interest from 3D voxel data.

Abstract translation: 传统的信息处理装置存在无法从3D体素数据中容易地提取和观察三维感兴趣区域的问题。 本发明提供了一种信息处理装置，其中存储了作为使用提取3D体素信息的第一三维区域掩模从3D体素信息提取的结果获得的多条切片信息的第一切片信息组， 其中所述信息处理装置接收关于第二三维区域掩模的输入; 获取构成第二三维区域掩模的第二网格信息; 基于第二网格信息，确定作为第二网格信息内的区域的内部区域和作为第二网格信息之外的区域的外部区域，对于第一切片信息组中的每个切片信息; 并且输出第一切片信息组，使得内部区域和外部区域在视觉上彼此区分。 利用该信息处理装置，可以容易地从3D体素数据中提取和观察三维感兴趣区域。

公开(公告)号：US20110211711A1

公开(公告)日：2011-09-01

申请号：US12932473

申请日：2011-02-25

Applicant: Takayuki Inoue ,  Yu Takahashi ,  Hiroshi Saruwatari ,  Kazunobu Kondo

Inventor： Takayuki Inoue ,  Yu Takahashi ,  Hiroshi Saruwatari ,  Kazunobu Kondo

IPC: H04B15/00

CPC classification number: G10L21/02 ,  H04R2227/001

Abstract: In a noise suppression apparatus, an index setter sets an exponent K that is a positive value. A factor setter variably sets a suppression factor according to the exponent K. A noise suppressor generates an audio signal from which a noise component is suppressed through noise suppression process of suppressing a Kth power of an amplitude of the noise component at each frequency thereof in a Kth power of an amplitude of the audio signal at each frequency thereof to a degree determined according to the suppression factor set by the factor setting part. Preferably, the index setter sets the exponent K to a value less than 0.1.

Abstract translation: 在噪声抑制装置中，索引设定器设定作为正值的指数K。 因子设定器根据指数K可变地设定抑制因子。噪声抑制器通过噪声抑制处理生成音频信号，通过噪声抑制处理抑制噪声分量在其频率中的噪声分量的振幅的第K次方 音频信号在其每个频率处的幅度的Kth功率达到由因子设置部分设置的抑制因子确定的程度。 优选地，索引设置器将指数K设置为小于0.1的值。