公开(公告)号：US07795045B2

公开(公告)日：2010-09-14

申请号：US12371021

申请日：2009-02-13

Applicant: Hugh J. Griffin ,  Takeshi Ishiguro ,  Kenji Sugiura

Inventor： Hugh J. Griffin ,  Takeshi Ishiguro ,  Kenji Sugiura

IPC: H01L21/00 ,  G01R31/26

CPC classification number: H01L22/12 ,  B81B2203/033 ,  B81C1/00619 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/3065 ,  H01L22/26 ,  H01L29/0634 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor wafer having at least one device trench extending to a first depth position includes providing a semiconductor substrate having first and second main surfaces and a semiconductor material layer having first and second main surfaces disposed on the first main surface of the semiconductor substrate and determining an etch ratio. The least one device trench and at least one monitor trench are simultaneously formed in the first main surface of the semiconductor material layer. The at least one monitor trench is monitored to detect when it extends to a second depth position. A ratio of the first depth position to the second depth position is generally equal to the etch ratio.

Abstract translation: 制造具有延伸到第一深度位置的至少一个器件沟槽的半导体晶片的方法包括提供具有第一和第二主表面的半导体衬底和具有设置在半导体的第一主表面上的第一和第二主表面的半导体材料层 衬底并确定蚀刻比。 在半导体材料层的第一主表面中同时形成至少一个器件沟槽和至少一个监测沟槽。 监视至少一个监视器沟槽以检测其何时延伸到第二深度位置。 第一深度位置与第二深度位置的比率通常等于蚀刻比。

公开(公告)号：US20100203739A1

公开(公告)日：2010-08-12

申请号：US12452692

申请日：2008-07-02

Applicant: Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

Inventor： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC: H01L21/306 ,  C23F1/08

CPC classification number: H01L21/3065 ,  B81C1/00531 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L21/02019 ,  H01L21/30621 ,  H01L21/32135

Abstract: A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

Abstract translation: 借助于选自ClF3和/或ClF5的蚀刻气体，通过SiGe混合半导体层的干法化学蚀刻来选择性地蚀刻硅半导体衬底上的SiGe混合半导体层的方法， 包括添加到蚀刻气体中的Cl 2和/或HCl。

公开(公告)号：US20070134829A1

公开(公告)日：2007-06-14

申请号：US11637020

申请日：2006-12-12

Applicant: Nicolle Wilke ,  Anthony Morrissey

Inventor： Nicolle Wilke ,  Anthony Morrissey

IPC: H01L21/00

CPC classification number: A61M37/0015 ,  A61M2037/003 ,  A61M2037/0046 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C1/00626 ,  B81C99/0065 ,  B81C2201/0133 ,  B81C2201/0138

Abstract: A method of wet etching produces high-precision microneedle arrays for use in medical applications. The method achieves precise process control over microneedle fabrication, at single wafer or batch-level, using wet etching of silicon with potassium hydroxide (KOH) solution by accurately identifying the etch time endpoint. Hence, microneedles of an exactly required height, shape, sharpness and surface quality are achieved. The outcome is a reliable, reproducible, robust and relatively inexpensive microneedle fabrication process. Microneedles formed by KOH wet etching have extremely smooth surfaces and exhibit superior mechanical and structural robustness to their dry etched counterparts. These properties afford extra reliability to such silicon microneedles, making them ideal for medical applications. The needles can also be hollowed. Wet etched silicon microneedles can then be employed as masters to replicate the improved surface and structural properties in other materials (such as polymers) by moulding.

Abstract translation: 湿蚀刻的方法产生用于医疗应用的高精度微针阵列。 该方法通过精确地识别蚀刻时间终点，通过使用氢氧化钾（KOH）溶液对硅进行湿蚀刻，在单晶片或批次水平上实现了微针制造的精确过程控制。 因此，实现了精确要求的高度，形状，锐度和表面质量的微针。 结果是可靠，可重现，稳健且相对便宜的微针制作工艺。 通过KOH湿蚀刻形成的微针具有非常光滑的表面，并且对其干蚀刻的对应物表现出优异的机械和结构坚固性。 这些性能为这种硅微针提供了额外的可靠性，使其成为医疗应用的理想选择。 针也可以是中空的。 湿法蚀刻的硅微针可用作主机，通过模制复制其他材料（如聚合物）中改进的表面和结构性能。

公开(公告)号：US20070119814A1

公开(公告)日：2007-05-31

申请号：US11627026

申请日：2007-01-25

Applicant: Satyadev Patel ,  Gregory Schaadt ,  Douglas MacDonald ,  Niles MacDonald ,  Hongqin Shi

Inventor： Satyadev Patel ,  Gregory Schaadt ,  Douglas MacDonald ,  Niles MacDonald ,  Hongqin Shi

IPC: C03C25/68 ,  G01L21/30 ,  H01L21/306 ,  H01L21/461 ,  B44C1/22

CPC classification number: H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored; and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber

Abstract translation: 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物; 并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室

公开(公告)号：US07189332B2

公开(公告)日：2007-03-13

申请号：US10269149

申请日：2002-10-11

Applicant: Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald ,  Hongqin Shi

Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald ,  Hongqin Shi

IPC: C23F3/12

CPC classification number: H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.

Abstract translation: 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。

公开(公告)号：US20050003673A1

公开(公告)日：2005-01-06

申请号：US10612123

申请日：2003-07-02

Applicant: Omid Mahdavi

Inventor： Omid Mahdavi

IPC: C23F4/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/461

CPC classification number: H01L28/24 ,  B81C99/0065 ,  B81C2201/0138 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/32136

Abstract: A thin film resistor is formed by employing a plasma etch on a resistor material layer. The resistor material layer can be fabricated employing a nickel chromium (NiCr) alloy, or nickel chromium aluminum (NiCrAl) alloy. A plasma etch is performed in a magnetically enhanced low pressure environment with a chlorine chemistry mixture. The magnetically enhanced low pressure environment and the sufficiently selective chlorine chemistry provide a substantially controlled plasma etch of the resistor material layer to form the thin film resistor. In-situ thickness measurements or an endpoint optical emission system can be employed to determine when to halt the etching process to mitigate damage associated with etching of the layer underlying the thin film resistor.

Abstract translation: 通过在电阻材料层上采用等离子体蚀刻来形成薄膜电阻器。 可以使用镍铬（NiCr）合金或镍铬铝（NiCrAl）合金制造电阻材料层。 在具有氯化学混合物的磁增强低压环境中进行等离子体蚀刻。 磁增强的低压环境和足够选择的氯化学物质提供电阻材料层的基本上受控的等离子体蚀刻以形成薄膜电阻器。 可以使用原位厚度测量或端点光发射系统来确定何时停止蚀刻工艺以减轻与薄膜电阻器下面的层的蚀刻相关的损伤。

公开(公告)号：US06436229B2

公开(公告)日：2002-08-20

申请号：US09741403

申请日：2000-12-19

Applicant: Yu-Chong Tai ,  Xuan-Oi Wang

Inventor： Yu-Chong Tai ,  Xuan-Oi Wang

IPC: B44C122

CPC classification number: B81C1/00531 ,  B81C99/0025 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J2237/3344 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/67069

Abstract: An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3 can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.

Abstract translation: 用于体相和表面微加工的气相溴化三氟化硼（BrF 3）硅各向同性室温蚀刻系统的装置和方法。 气相BrF3可以以脉冲模式和连续流动模式施加。 脉冲模式下的蚀刻速率取决于气体浓度，反应压力，脉冲持续时间，图案开口面积和有效表面积。

公开(公告)号：US20010002663A1

公开(公告)日：2001-06-07

申请号：US09741403

申请日：2000-12-19

Applicant: California Institute of Technology, a corporation

Inventor： Yu-Chong Tai ,  Xuan-Oi Wang

IPC: C23F001/00 ,  B44C001/22 ,  C23F003/00 ,  H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00531 ,  B81C99/0025 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J2237/3344 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/67069

Abstract: An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.

Abstract translation: 用于体相和表面微加工的气相溴化三氟化硼（BrF 3）硅各向同性室温蚀刻系统的装置和方法。 气相BrF3可以以脉冲模式和连续流动模式施加。 脉冲模式下的蚀刻速率取决于气体浓度，反应压力，脉冲持续时间，图案开口面积和有效表面积。