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    Post deposition wafer cleaning formulation
    41.
    发明授权
    Post deposition wafer cleaning formulation 有权
    后沉积晶片清洗配方

    公开(公告)号：US08921296B2

    公开(公告)日：2014-12-30

    申请号：US12965777

    申请日：2010-12-10

    申请人： Artur Kolics

    发明人： Artur Kolics

    IPC分类号： C11D1/88 ,  C11D3/00 ,  C11D3/04 ,  C11D3/06 ,  C11D3/24 ,  C11D3/34 ,  C11D3/36 ,  C11D11/00 ,  C11D3/20

    CPC分类号： C11D11/0047 ,  C11D1/88 ,  C11D3/0073 ,  C11D3/042 ,  C11D3/06 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/245 ,  C11D3/3409 ,  C11D3/361 ,  C11D3/362 ,  H01L21/02071

    摘要： Methods and systems for cleaning corrosion product of a metallic capping layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface.

    摘要翻译： 提供了用于从衬底表面清洁金属覆盖层的腐蚀产物的方法和系统。 根据一个实施方案，处理溶液包括表面活性剂，络合剂和pH调节剂。 表面活性剂被配置为增强基底表面的润湿，并且抑制覆盖层的进一步腐蚀。 络合剂被配置成结合从衬底表面解吸的金属离子。 pH调节器被配置为将pH调节至所需水平，以便促进腐蚀产物从基底表面的解吸附。

    Aqueous cleaning composition for removing residues and method using same
    42.
    发明授权
    Aqueous cleaning composition for removing residues and method using same 有权
    用于除去残留物的水性清洁组合物及其使用方法

    公开(公告)号：US08772214B2

    公开(公告)日：2014-07-08

    申请号：US11250250

    申请日：2005-10-14

    申请人： Aiping Wu ,  Roberto John Rovito

    发明人： Aiping Wu ,  Roberto John Rovito

    IPC分类号： C11D1/62 ,  C11D11/00 ,  C11D3/24

    CPC分类号： C11D11/0047 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/245 ,  C11D7/08 ,  C11D7/3209 ,  C23G1/18 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02057

    摘要： A composition and method for removing residues such as, without limitation, post etched and/or post ashed photoresist, plasma etching, ashing, and mixtures thereof from a substrate is described herein. In one aspect, there is provided a method for removing residues from a substrate comprising: contacting the substrate with a composition comprising: water; a quaternary ammonium hydroxide compound; a fluoride containing compound; and optionally a corrosion inhibitor wherein the composition is free of an added organic solvent and wherein the composition has a pH greater than 9.

    摘要翻译： 本文描述了用于从基板去除残留物（例如但不限于后蚀刻和/或后灰化光刻胶，等离子体蚀刻，灰化及其混合物）的组合物和方法。 在一个方面，提供了从基材中除去残余物的方法，包括：使基材与包含水的组合物接触; 氢氧化季铵化合物; 含氟化合物; 和任选的腐蚀抑制剂，其中组合物不含加入的有机溶剂，并且其中组合物的pH大于9。

    3-CHLORO-1,1,1,6,6,6-HEXAFLUORO-2,4-HEXADIENE AND SOLVENT COMPOSITIONS CONTAINING THE SAME
    44.
    发明申请
    3-CHLORO-1,1,1,6,6,6-HEXAFLUORO-2,4-HEXADIENE AND SOLVENT COMPOSITIONS CONTAINING THE SAME 有权
    含有它们的3-氯代-1,1,1,6,6,6-六氟-2,4-二十六烷和溶剂组合物

    公开(公告)号：US20110224125A1

    公开(公告)日：2011-09-15

    申请号：US12722632

    申请日：2010-03-12

    申请人： Robert Johnson ,  Hsueh Sung Tung

    发明人： Robert Johnson ,  Hsueh Sung Tung

    IPC分类号： C11D3/43 ,  C07C21/19

    CPC分类号： C11D7/5018 ,  C07C21/19 ,  C11D3/245 ,  C11D3/43

    摘要： Disclosed are compositions and systems having utility in numerous situations, including in particular solvent cleaning systems, as well as refrigerant lubricants and/or compatibilizing agents, and to methods which utilize such compositions and systems. More particularly, the present invention in preferred aspects is directed to solvents, blowing agents, heat transfer fluids and compatibilizing agents comprising the compound 3-chloro-1,1,1,6,6,6-hexafluoro-2,4-hexadiene.

    摘要翻译： 公开了在许多情况下具有效用的组合物和系统，包括特别是溶剂清洁系统，以及制冷剂润滑剂和/或相容剂，以及利用这种组合物和体系的方法。 更具体地说，本发明在优选方面涉及包含化合物3-氯-1,1,1,6,6,6-六氟-2,4-己二烯的溶剂，发泡剂，传热流体和相容剂。

    Post Deposition Wafer Cleaning Formulation
    45.
    发明申请
    Post Deposition Wafer Cleaning Formulation 有权
    后沉积晶圆清洗配方

    公开(公告)号：US20110152151A1

    公开(公告)日：2011-06-23

    申请号：US12965777

    申请日：2010-12-10

    申请人： Artur Kolics

    发明人： Artur Kolics

    IPC分类号： C11D7/26

    CPC分类号： C11D11/0047 ,  C11D1/88 ,  C11D3/0073 ,  C11D3/042 ,  C11D3/06 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/245 ,  C11D3/3409 ,  C11D3/361 ,  C11D3/362 ,  H01L21/02071

    摘要： Methods and systems for cleaning corrosion product of a metallic capping layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface.

    摘要翻译： 提供了用于从衬底表面清洁金属覆盖层的腐蚀产物的方法和系统。 根据一个实施方案，处理溶液包括表面活性剂，络合剂和pH调节剂。 表面活性剂被配置为增强基底表面的润湿，并且抑制覆盖层的进一步腐蚀。 络合剂被配置成结合从衬底表面解吸的金属离子。 pH调节器被配置为将pH调节至所需水平，以便促进腐蚀产物从基底表面的解吸附。

    CLEANING SYSTEM UTILIZING AN ORGANIC CLEANING SOLVENT AND A PRESSURIZED FLUID SOLVENT
    47.
    发明申请
    CLEANING SYSTEM UTILIZING AN ORGANIC CLEANING SOLVENT AND A PRESSURIZED FLUID SOLVENT 审中-公开
    使用有机清洁溶剂和增压液体溶剂的清洁系统

    公开(公告)号：US20110073138A1

    公开(公告)日：2011-03-31

    申请号：US12964330

    申请日：2010-12-09

    申请人： James E. Schulte ,  Timothy L. Racette ,  Gene R. Damaso

    发明人： James E. Schulte ,  Timothy L. Racette ,  Gene R. Damaso

    IPC分类号： B08B3/02

    CPC分类号： C11D7/5022 ,  B08B7/0021 ,  C11D3/162 ,  C11D3/2068 ,  C11D3/2093 ,  C11D3/24 ,  C11D3/245 ,  C11D7/263 ,  C11D7/264 ,  C11D7/266 ,  C11D7/5004 ,  C11D11/0023 ,  C11D11/0064 ,  D06F43/007 ,  D06L1/02 ,  D06L1/08

    摘要： A cleaning system that utilizes an organic cleaning solvent and pressurized fluid solvent is disclosed. The system has no conventional evaporative hot air drying cycle. Instead, the system utilizes the solubility of the organic solvent in pressurized fluid solvent as well as the physical properties of pressurized fluid solvent. After an organic solvent cleaning cycle, the solvent is extracted from the textiles at high speed in a rotating drum in the same way conventional solvents are extracted from textiles in conventional evaporative hot air dry cleaning machines. Instead of proceeding to a conventional drying cycle, the extracted textiles are then immersed in pressurized fluid solvent to extract the residual organic solvent from the textiles. This is possible because the organic solvent is soluble in pressurized fluid solvent. After the textiles are immersed in pressurized fluid solvent, pressurized fluid solvent is pumped from the drum. Finally, the drum is de-pressurized to atmospheric pressure to evaporate any remaining pressurized fluid solvent, yielding clean, solvent free textiles. The organic solvent is preferably selected from terpenes, halohydrocarbons, certain glycol ethers, polyols, ethers, esters of glycol ethers, esters of fatty acids and other long chain carboxylic acids, fatty alcohols and other long-chain alcohols, short-chain alcohols, polar aprotic solvents, siloxanes, hydrofluoroethers, dibasic esters, and aliphatic hydrocarbons solvents or similar solvents or mixtures of such solvents and the pressurized fluid solvent is preferably densified carbon dioxide.

    摘要翻译： 公开了一种利用有机清洗溶剂和加压流体溶剂的清洁系统。 该系统没有常规的蒸发热风干燥循环。 相反，该系统利用有机溶剂在加压流体溶剂中的溶解度以及加压流体溶剂的物理性质。 在有机溶剂清洗循环之后，以与传统蒸发式热风干燥机中的纺织品中提取常规溶剂相同的方式，在旋转滚筒中以高速从织物中提取溶剂。 代替进行常规的干燥循环，然后将提取的纺织品浸入加压流体溶剂中以从纺织品中提取残留的有机溶剂。 这是可能的，因为有机溶剂可溶于加压流体溶剂。 将纺织品浸入加压流体溶剂中后，从鼓中泵送加压流体溶剂。 最后，将滚筒减压至大气压力以蒸发任何剩余的加压流体溶剂，产生干净，无溶剂的纺织品。 有机溶剂优选选自萜烯，卤代烃，某些二醇醚，多元醇，醚，二醇醚的酯，脂肪酸和其它长链羧酸的酯，脂肪醇和其它长链醇，短链醇，极性 非质子溶剂，硅氧烷，氢氟醚，二元酯和脂族烃溶剂或类似溶剂或这些溶剂的混合物和加压流体溶剂优选是致密化的二氧化碳。

    Resist, barc and gap fill material stripping chemical and method
    48.
    发明授权
    Resist, barc and gap fill material stripping chemical and method 有权
    抗蚀剂，棒材和间隙填充材料剥离化学和方法

    公开(公告)号：US07888301B2

    公开(公告)日：2011-02-15

    申请号：US10581475

    申请日：2004-12-01

    申请人： David D. Bernhard ,  Yoichiro Fujita ,  Tomoe Miyazawa ,  Makoto Nakajima

    发明人： David D. Bernhard ,  Yoichiro Fujita ,  Tomoe Miyazawa ,  Makoto Nakajima

    IPC分类号： C11D7/32

    CPC分类号： H01L21/31111 ,  C11D3/044 ,  C11D3/245 ,  C11D3/30 ,  C11D3/43 ,  C11D7/10 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/5004 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071

    摘要： An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, and optionally chelating agent and/or surfactant. The composition achieves high-efficiency removal of such material(s) in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

    摘要翻译： 一种用于从其上具有这种材料的基材去除光致抗蚀剂，底部抗反射涂层（BARC）材料和/或间隙填充材料的水基组合物和方法。 水基组合物包括氟化物源，至少一种有机胺，至少一种有机溶剂，水和任选的螯合剂和/或表面活性剂。 组合物可以在集成电路的制造中实现这种材料的高效去除，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损坏半导体结构中使用的基于SiOC的介电材料。