Cleaning solution formulations for substrates
    1.
    发明授权
    Cleaning solution formulations for substrates 有权
    基材清洗剂配方

    公开(公告)号:US09058975B2

    公开(公告)日:2015-06-16

    申请号:US12205896

    申请日:2008-09-07

    摘要: Presented is a cleaning solution according to one embodiment of the present invention that includes a corrosion inhibitor, a solubilizing agent, an oxygen scavenger, and a complexing agent also capable as a pH adjustor. Another embodiment of the present invention includes cleaning solutions that include a pH adjustor, an optional complexing agent, and a corrosion inhibitor. The cleaning solutions may have a solubilizing agent optionally present, may have a surfactant optionally present, and may have a dielectric etchant optionally present.

    摘要翻译: 提出了根据本发明的一个实施方案的清洁溶液,其包括腐蚀抑制剂,增溶剂,除氧剂和还可以作为pH调节剂的络合剂。 本发明的另一个实施方案包括包括pH调节剂,任选的络合剂和腐蚀抑制剂的清洁溶液。 清洁溶液可以具有任选存在的增溶剂,可以具有任选存在的表面活性剂,并且可以具有任选存在的电介质蚀刻剂。

    Methods and materials for anchoring gapfill metals
    2.
    发明授权
    Methods and materials for anchoring gapfill metals 有权
    锚定缝隙金属的方法和材料

    公开(公告)号:US08895441B2

    公开(公告)日:2014-11-25

    申请号:US13404274

    申请日:2012-02-24

    申请人: Artur Kolics

    发明人: Artur Kolics

    IPC分类号: B32B15/04 B32B3/30

    摘要: One aspect of the present invention includes a method of fabricating an electronic device. According to one embodiment, the method comprises providing a substrate having dielectric oxide surface areas adjacent to electrically conductive surface areas, chemically bonding an anchor compound with the dielectric oxide surface areas so as to form an anchor layer, initiating the growth of a metal using the electrically conductive surface areas and growing the metal so that the anchor layer also bonds with the metal. The anchor compound has at least one functional group capable of forming a chemical bond with the oxide surface and has at least one functional group capable of forming a chemical bond with the metal. Another aspect of the present invention is an electronic device. A third aspect of the present invention is a solution comprising the anchor compound.

    摘要翻译: 本发明的一个方面包括制造电子设备的方法。 根据一个实施例,所述方法包括提供具有与导电表面区域相邻的电介质氧化物表面区域的基板,将锚固化合物与电介质氧化物表面区域化学结合,以形成锚定层,从而使用 导电表面积并使金属生长,使得锚定层也与金属结合。 锚化合物具有至少一个能够与氧化物表面形成化学键的官能团,并且具有至少一个能够与金属形成化学键的官能团。 本发明的另一方面是电子设备。 本发明的第三方面是包含锚化合物的溶液。

    Electroless deposition solutions and process control
    3.
    发明授权
    Electroless deposition solutions and process control 失效
    无电沉积解决方案和工艺控制

    公开(公告)号:US08328919B2

    公开(公告)日:2012-12-11

    申请号:US12731115

    申请日:2010-03-24

    申请人: Artur Kolics

    发明人: Artur Kolics

    摘要: One embodiment of the present invention is a method of electroless deposition of cap layers for fabricating an integrated circuit. The method includes controlling the composition of an electroless deposition bath so as to substantially maintain the electroless deposition properties of the bath. Other embodiments of the present invention include electroless deposition solutions. Still another embodiment of the present invention is a composition used to recondition an electroless deposition bath.

    摘要翻译: 本发明的一个实施例是用于制造集成电路的盖层的无电沉积方法。 该方法包括控制无电沉积浴的组成,以便基本保持浴的无电沉积性能。 本发明的其它实施方案包括无电沉积溶液。 本发明的另一个实施方案是用于重新形成无电沉积浴的组合物。

    Apparatus and method for electroless deposition of materials on semiconductor substrates

    公开(公告)号:US06913651B2

    公开(公告)日:2005-07-05

    申请号:US10103015

    申请日:2002-03-22

    摘要: An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

    Solution composition and method for electroless deposition of coatings free of alkali metals
    5.
    发明授权
    Solution composition and method for electroless deposition of coatings free of alkali metals 有权
    用于无碱沉积不含碱金属的涂层的溶液组成和方法

    公开(公告)号:US06911067B2

    公开(公告)日:2005-06-28

    申请号:US10339260

    申请日:2003-01-10

    IPC分类号: C23C18/50 C23C18/52

    CPC分类号: C23C18/50

    摘要: An electroless deposition solution of the invention for forming an alkali-metal-free coating on a substrate comprises a first-metal ion source for producing first-metal ions, a pH adjuster in the form of a hydroxide for adjusting the pH of the solution, a reducing agent, which reduces the first-metal ions into the first metal on the substrate, a complexing agent for keeping the first-metal ions in the solution, and a source of ions of a second element for generation of second-metal ions that improve the corrosion resistance of the aforementioned coating. The method of the invention consists of the following steps: preparing hydroxides of a metal such as Ni and Co by means of a complexing reaction, in which solutions of hydroxides of Ni and Co are obtained by displacing hydroxyl ions OH− beyond the external boundary of ligands of mono- or polydental complexants; preparing a complex composition based on a tungsten oxide WO3 or a phosphorous tungstic acid, such as H3[P(W3O10)4], as well as on the use of tungsten compounds for improving anti-corrosive properties of the deposited films; mixing the aforementioned solutions of salts of Co, Ni, or W and maintaining under a temperatures within the range of 20° C. to 100° C.; and carrying out deposition from the obtained mixed solution.

    摘要翻译: 本发明的用于在基材上形成无碱金属的涂层的无电沉积溶液包括用于产生第一金属离子的第一金属离子源,用于调节溶液pH的氢氧化物形式的pH调节剂, 还原剂,其将第一金属离子还原成基底上的第一金属,用于将第一金属离子保持在溶液中的络合剂和用于产生第二金属离子的第二元素的离子源, 提高上述涂层的耐腐蚀性。 本发明的方法包括以下步骤:通过络合反应制备金属如Ni和Co的氢氧化物,其中通过置换羟基离子得到Ni和Co的氢氧化物溶液, SUP>超出单齿或多齿配位体配体的外界; 制备基于氧化钨WO 3或磷钨酸的复合组合物,例如H 3 [P(W 3 N)O 10),以及使用钨化合物改善沉积膜的抗腐蚀性能; 将上述Co,Ni或W的盐溶液混合并保持在20℃至100℃的温度范围内。 并从所得混合溶液中进行沉积。

    Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper
    6.
    发明授权
    Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper 有权
    用于沉积钴的无活化无电解液和用于在铜上沉积钴覆盖/钝化层的方法

    公开(公告)号:US06902605B2

    公开(公告)日:2005-06-07

    申请号:US10379692

    申请日:2003-03-06

    摘要: The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.

    摘要翻译: 本发明涉及组合物和无碱形成无碱金属的涂层的方法,其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性,当Co-Cu 系统层用于IC芯片。 无电溶液的组成包含多于一种还原剂,其中之一可以催化铜上的钴的初始无电沉积层(称为引发剂),而另一种还原剂继续在上述初始层上沉积钴。 来自引发剂的少量(100-5000ppm)元素也构成化学镀膜,预期与无引发剂的沉积浴相比,可以进一步提高所得膜的阻隔性能。 这种涂层可以应用于半导体制造中,其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

    Post deposition wafer cleaning formulation
    8.
    发明授权
    Post deposition wafer cleaning formulation 有权
    后沉积晶片清洗配方

    公开(公告)号:US08921296B2

    公开(公告)日:2014-12-30

    申请号:US12965777

    申请日:2010-12-10

    申请人: Artur Kolics

    发明人: Artur Kolics

    摘要: Methods and systems for cleaning corrosion product of a metallic capping layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface.

    摘要翻译: 提供了用于从衬底表面清洁金属覆盖层的腐蚀产物的方法和系统。 根据一个实施方案,处理溶液包括表面活性剂,络合剂和pH调节剂。 表面活性剂被配置为增强基底表面的润湿,并且抑制覆盖层的进一步腐蚀。 络合剂被配置成结合从衬底表面解吸的金属离子。 pH调节器被配置为将pH调节至所需水平,以便促进腐蚀产物从基底表面的解吸附。

    Post Deposition Wafer Cleaning Formulation
    10.
    发明申请
    Post Deposition Wafer Cleaning Formulation 有权
    后沉积晶圆清洗配方

    公开(公告)号:US20110152151A1

    公开(公告)日:2011-06-23

    申请号:US12965777

    申请日:2010-12-10

    申请人: Artur Kolics

    发明人: Artur Kolics

    IPC分类号: C11D7/26

    摘要: Methods and systems for cleaning corrosion product of a metallic capping layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface.

    摘要翻译: 提供了用于从衬底表面清洁金属覆盖层的腐蚀产物的方法和系统。 根据一个实施方案,处理溶液包括表面活性剂,络合剂和pH调节剂。 表面活性剂被配置为增强基底表面的润湿,并且抑制覆盖层的进一步腐蚀。 络合剂被配置成结合从衬底表面解吸的金属离子。 pH调节器被配置为将pH调节至所需水平,以便促进腐蚀产物从基底表面的解吸附。