公开(公告)号：US09053548B2

公开(公告)日：2015-06-09

申请号：US13958788

申请日：2013-08-05

Applicant: CANON KABUSHIKI KAISHA

Inventor： Chiaki Sato

IPC: A61N5/00 ,  G06T5/00 ,  G06T11/60 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G06T5/006 ,  B82Y10/00 ,  B82Y40/00 ,  G06T11/60 ,  H01J37/3177 ,  H01J2237/31771

Abstract: A lithography apparatus converts vector pattern data into bitmap data and performs writing on a substrate with a charged particle beam based on the bitmap data. Here, the lithography apparatus includes a display unit and a processing unit that causes the display unit to display an image corresponding to the bitmap data and performs processing for updating the bitmap data by changing at least one of a pixel value, dimension, and shape of the image displayed on the display unit via a graphical user interface.

Abstract translation: 光刻设备将矢量图案数据转换成位图数据，并且基于位图数据在带有带电粒子束的基板上执行写入。 这里，光刻设备包括显示单元和处理单元，其使得显示单元显示与位图数据相对应的图像，并且通过改变位图数据的像素值，尺寸和形状中的至少一个来执行用于更新位图数据的处理 通过图形用户界面显示在显示单元上的图像。

公开(公告)号：US20140361193A1

公开(公告)日：2014-12-11

申请号：US14297030

申请日：2014-06-05

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi MATSUMOTO

IPC: H01J37/317 ,  G21K5/04

CPC classification number: H01J37/3177 ,  G21K5/04 ,  H01J37/045 ,  H01J2237/0435 ,  H01J2237/31762 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: A multi charged particle beam writing method includes dividing a maximum irradiation time per a shot into a digit number of first irradiation time periods, each of which is calculated by multiplying a corresponding second gray scale value by the quantization unit, where second gray scale values are gray scale values defined in decimal numbers converted from each digit value of data of binary numbers; dividing second irradiation time periods, which are a part of the first irradiation time periods into third irradiation time periods; dividing irradiation of each beam into the first irradiation steps of the third irradiation time periods and second irradiation steps of the remaining undivided first irradiation time periods; and irradiating a target object, in order, with the multi beams such that the groups are respectively composed of combination of at least two irradiation steps of first irradiation steps and second irradiation steps and the groups continue in order.

Abstract translation: 一种多带电粒子束写入方法，其特征在于，将每个镜头的最大照射时间除以第一照射时间段的数字数，其中每个照射时间段通过将相应的第二灰度值乘以量化单元而计算，其中第二灰度值为 以二进制数字的数据的每个数字值转换的十进制数中定义的灰度值; 将作为第一照射时间段的一部分的第二照射时间段分割为第三照射时间段; 将每个光束的照射分成第三照射时间段的第一照射步骤和剩余的未分割的第一照射时间段的第二照射步骤; 并且依次用多光束照射目标物体，使得所述组分别由第一照射步骤和第二照射步骤的至少两个照射步骤的组合构成，并且所述组依次继续。

公开(公告)号：US20140077103A1

公开(公告)日：2014-03-20

申请号：US13961101

申请日：2013-08-07

Applicant: NuFlare Technology, Inc.

Inventor： Hironobu MATSUMOTO

IPC: H01J37/317

CPC classification number: H01J37/3174 ,  H01J37/3026 ,  H01J37/317 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A charged particle beam writing apparatus includes a dose calculation unit to calculate, for each of a plurality of first small regions made by virtually dividing a writing region of a target object to be mesh-like regions each having a size larger than an influence radius of forward scattering of a charged particle beam, a dose of the charged particle beam shot in a first small region concerned of the plurality of first small regions, by using a dose formula which is different depending on a shot type classified by whether a shot figure formed by the charged particle beam is at an edge of a figure pattern or inside the figure pattern in the first small region concerned, and a writing unit to write, for each of the plurality of first small regions, the figure pattern with a dose calculated by the dose formula.

Abstract translation: 带电粒子束写入装置包括：剂量计算单元，对于通过将目标对象的写入区域实际上划分为具有大于影响半径的尺寸的网状区域而制成的多个第一小区域中的每一个， 带电粒子束的前向散射，通过使用根据是否形成喷射图像而分类的喷射类型不同的剂量公式，在多个第一小区域中涉及的第一小区域中拍摄的带电粒子束的剂量 通过带电粒子束处于图形图案的边缘或者在所述第一小区域中的图形图案内部，以及写入单元，用于以多个第一小区域中的每一个为每个图形模式以由 剂量公式。

公开(公告)号：US20140033144A1

公开(公告)日：2014-01-30

申请号：US13886062

申请日：2013-05-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Chun Wang ,  Jeng-Horng Chen ,  Shy-Jay Lin ,  Chia-Ping Chiang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/144 ,  G03F1/78 ,  G03F7/70283 ,  G03F7/70441 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31771 ,  H01L21/0274 ,  H01L21/0275

Abstract: A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.

Abstract translation: 使用电子束将设计写入材料的方法包括将第一剂量分配给第一多边形形状。 第一多边形形状占据第一虚拟层并且包括第一组像素。 该方法还包括使用第一多边形形状来模拟第一写入操作以创建设计，识别模拟的第一写入操作中的错误，以及将第二剂量分配给第二多边形形状以减少误差。 第二多边形形状占据第二虚拟层。 该方法还包括创建包括第一和第二多边形形状并将数据结构保存到非暂时性计算机可读介质的数据结构。

公开(公告)号：US08468473B1

公开(公告)日：2013-06-18

申请号：US13492408

申请日：2012-06-08

Applicant: Hung-Chun Wang ,  Tzu-Chin Lin ,  Chia-Chi Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Tzu-Chin Lin ,  Chia-Chi Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771

Abstract: The present disclosure describes a method of forming a pattern by an electron beam lithography system. The method includes receiving an integrated circuit (IC) design layout data having a polygon and a forbidden pattern, modifying the polygon and the forbidden pattern using an electron proximity correction (EPC) technique, stripping the modified polygon into subfields, converting the stripped polygon to an electron beam writer format data, and writing the electron beam writer formatted polygon onto a substrate by an electron beam writer. Stripping the modified polygon includes finding the modified forbidden pattern as a reference layer, and stitching the modified polygon to avoid stitching the modified forbidden pattern.

Abstract translation: 本公开描述了通过电子束光刻系统形成图案的方法。 该方法包括接收具有多边形和禁止图案的集成电路（IC）设计布局数据，使用电子接近校正（EPC）技术修改多边形和禁止图案，将修改的多边形剥离成子字段，将剥离的多边形转换为 电子束写入器格式数据，并通过电子束写入器将电子束写入器格式化的多边形写入到衬底上。 剥离修改的多边形包括找到修改的禁止图案作为参考层，并且修剪修改的多边形以避免修改修改的禁止图案。

公开(公告)号：US20120329289A1

公开(公告)日：2012-12-27

申请号：US13168953

申请日：2011-06-25

Applicant: Akira Fujimura ,  Ingo Bork

Inventor： Akira Fujimura ,  Ingo Bork

IPC: H01L21/26 ,  G06F17/50 ,  G21K5/00

CPC classification number: G03F7/2037 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01L21/027 ,  Y10S430/143

Abstract: In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). At least some shots in the plurality of shots overlap other shots. In some embodiments, βf is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to βf expands the process window for the charged particle beam lithography process.

Abstract translation: 在用于对带电粒子束光刻进行压裂或掩模数据准备或掩模处理校正的方法中，确定将在表面上形成图案的多个镜头，其中确定镜头，以便将所得到的图案的灵敏度降低到 光束模糊（＆bgr; f）。 多个镜头中的至少一些镜头重叠其他镜头。 在一些实施例中，通过在初始拍摄确定期间或在后处理步骤中控制多个拍摄中的拍摄重叠量来减小图像f。 对“bgr”的灵敏度降低扩大了带电粒子束光刻工艺的工艺窗口。

公开(公告)号：US20120192126A1

公开(公告)日：2012-07-26

申请号：US13011165

申请日：2011-01-21

Applicant: Hung-Chun Wang ,  Jeng-Horng Chen ,  Shy-Jay Lin ,  Chia-Ping Chiang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Jeng-Horng Chen ,  Shy-Jay Lin ,  Chia-Ping Chiang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/144 ,  G03F1/78 ,  G03F7/70283 ,  G03F7/70441 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31771 ,  H01L21/0274 ,  H01L21/0275

Abstract: A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.

Abstract translation: 使用电子束将设计写入材料的方法包括将第一剂量分配给第一多边形形状。 第一多边形形状占据第一虚拟层并且包括第一组像素。 该方法还包括使用第一多边形形状来模拟第一写入操作以创建设计，识别模拟的第一写入操作中的错误，以及将第二剂量分配给第二多边形形状以减少误差。 第二多边形形状占据第二虚拟层。 该方法还包括创建包括第一和第二多边形形状并将数据结构保存到非暂时性计算机可读介质的数据结构。

公开(公告)号：US08178280B2

公开(公告)日：2012-05-15

申请号：US12700880

申请日：2010-02-05

Applicant: Shih-Ming Chang ,  Shy-Jay Lin

Inventor： Shih-Ming Chang ,  Shy-Jay Lin

IPC: G03C5/00

CPC classification number: G03F1/78 ,  H01J37/3174 ,  H01J2237/31771 ,  H01J2237/31772 ,  Y10S430/143

Abstract: A lithography method is disclosed. An exemplary lithography method includes providing an energy sensitive resist material on a substrate; providing a desired pattern; performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material; and directing the charged particle beam from an off state to a defocus state, wherein the defocus state compensates for the backscattered energy, thereby reducing proximity effects.

Abstract translation: 公开了一种光刻方法。 示例性的光刻方法包括在基底上提供能量敏感的抗蚀剂材料; 提供期望的图案; 在所述基板上执行光刻工艺，其中所述光刻工艺包括将所述能量敏感抗蚀剂材料暴露于带电粒子束，使得所需图案转移到所述能量敏感抗蚀剂材料; 并且将带电粒子束从断开状态引导到散焦状态，其中散焦状态补偿反向散射能量，从而减少邻近效应。

公开(公告)号：US20110195359A1

公开(公告)日：2011-08-11

申请号：US12700880

申请日：2010-02-05

Applicant: Shih-Ming Chang ,  Shy-Jay Lin

Inventor： Shih-Ming Chang ,  Shy-Jay Lin

IPC: G03F7/20

CPC classification number: G03F1/78 ,  H01J37/3174 ,  H01J2237/31771 ,  H01J2237/31772 ,  Y10S430/143

Abstract: A lithography method is disclosed. An exemplary lithography method includes providing an energy sensitive resist material on a substrate; providing a desired pattern; performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material; and directing the charged particle beam from an off state to a defocus state, wherein the defocus state compensates for the backscattered energy, thereby reducing proximity effects.

Abstract translation: 公开了一种光刻方法。 示例性的光刻方法包括在基底上提供能量敏感的抗蚀剂材料; 提供期望的图案; 在所述基板上执行光刻工艺，其中所述光刻工艺包括将所述能量敏感抗蚀剂材料暴露于带电粒子束，使得所需图案转移到所述能量敏感抗蚀剂材料上; 并且将带电粒子束从断开状态引导到散焦状态，其中散焦状态补偿反向散射能量，从而减少邻近效应。

公开(公告)号：US07842936B2

公开(公告)日：2010-11-30

申请号：US11716452

申请日：2007-03-09

Applicant: Pieter Kruit ,  Remco Jager ,  Stijn Willem Karel Herman Steenbrink ,  Marco Jan-Jaco Wieland

Inventor： Pieter Kruit ,  Remco Jager ,  Stijn Willem Karel Herman Steenbrink ,  Marco Jan-Jaco Wieland

IPC: G21K5/04

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70291 ,  G03F7/70383 ,  G03F7/70508 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31771 ,  H01L21/67282

Abstract: The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.

Abstract translation: 本发明涉及一种探针形成光刻系统，用于使用黑白写入策略（即写入或不写入网格单元）在诸如晶片的目标表面上产生图案，从而将所述图案划分在包括网格单元的格子上 所述图案包括尺寸大于网格单元的尺寸的特征，在每个单元中，所述探针被切换为“开”或“关”，其中所述目标上的探针覆盖比网格单元大得多的表面积，以及 其中在特征内，在探针大小的范围以及这种系统可以基于的方法上实现黑白写入的位置相关分布。