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    Process for synthesizing and growing single crystalline beryl
    43.
    发明授权
    Process for synthesizing and growing single crystalline beryl 失效
    合成和生长单晶绿柱石的方法

    公开(公告)号：US4093502A

    公开(公告)日：1978-06-06

    申请号：US657595

    申请日：1976-02-12

    Applicant: Masaya Hirabayashi ,  Naoki Omi ,  Yuji Nakano ,  Tetsuro Oshiba

    Inventor： Masaya Hirabayashi ,  Naoki Omi ,  Yuji Nakano ,  Tetsuro Oshiba

    IPC: C01B33/26 ,  C30B9/00 ,  C30B9/12 ,  C30B29/34 ,  B01J17/04

    CPC classification number: C30B29/22 ,  C30B9/00

    Abstract: A process for synthesizing single crystalline beryl out of a molten salt is disclosed. The process comprises the steps of providing at least one flux to which is added the component oxides of beryl and optionally a colorant. The mixture thus obtained is heated at a temperature higher than the melting point of the flux to thereby form a molten salt. After the formation of the molten salt, the salt is cooled below the temperature sphere of beryl formation and is thereafter reheatd and again melted. At this point beryl crystals are added to the molten salt which thereby form single crystalline beryl from the molten salt. By the use of the process of the present invention, superior quality single crystalline beryl is produced economically and at a high yield rate.

    Abstract translation: 公开了从熔盐中合成单晶绿宝石的方法。 该方法包括以下步骤：提供至少一种通量，向其中加入氧化铍和任选的着色剂。 将如此获得的混合物在高于熔剂熔点的温度下加热，从而形成熔融盐。 形成熔融盐后，将盐冷却至低于绿柱石形成温度范围，然后重新加热并再次熔融。 此时，将铍晶体加入到熔融盐中，从而从熔融盐形成单晶铍。 通过使用本发明的方法，经济地以高产率生产优质单晶绿柱石。

    Screening seeds for quartz growth
    48.
    发明授权
    Screening seeds for quartz growth 失效
    筛选种子用于石英生长

    公开(公告)号：US3976535A

    公开(公告)日：1976-08-24

    申请号：US580782

    申请日：1975-05-27

    Applicant: Robert Leroy Barns

    Inventor： Robert Leroy Barns

    IPC: C30B7/00 ,  B01J17/04 ,  C01B33/12

    CPC classification number: C30B7/00 ,  C30B29/18 ,  Y10S117/902 ,  Y10T117/1096

    Abstract: z-face quartz of good quality suitable for piezoelectric applications can be grown at rates near 35 mil/da at p-T conditions easily accessible in commercial autoclaves. The growth conditions are predictable from previous systematic studies of growth rate. Cracking of grown crystals either during growth or in crystal processing can be severe and can account for as much as 15-50% yield loss. However, much of this loss can be reduced by carefully screening seeds for strain using the new polariscopic technique of the invention. Strain (and cracking) are severe with growth on highly strained seeds and at high growth rates. Carefully choosing seeds reduces the strain in the grown material for a given growth rate.

    Abstract translation: 适用于压电应用的质量好的z面石英可以在商用高压釜中容易接近的p-T条件下以35密耳/ at附近的速率生长。 生长条件可以从以前的增长率系统研究中预测。 在生长或晶体加工过程中，生长晶体的破裂可能很严重，产量损失可高达15-50％。 然而，通过使用本发明的新的偏振镜技术仔细筛选种子的菌株，可以减少许多这种损失。 应变（和开裂）在高应变种子和高生长速率下生长严重。 仔细选择种子可以在给定的生长速率下减少生长的材料中的应变。

    Process for producing amethyst crystal
    49.
    发明授权
    Process for producing amethyst crystal 失效
    制备紫水晶的方法

    公开(公告)号：US3936276A

    公开(公告)日：1976-02-03

    申请号：US422162

    申请日：1973-12-06

    Applicant: Vladimir Sergeevich Balitsky ,  Lev Nikolaevich Khetchikov ,  Valentina Petrovna Orlova ,  Ljudmila Vasilievna Balitskaya

    Inventor： Vladimir Sergeevich Balitsky ,  Lev Nikolaevich Khetchikov ,  Valentina Petrovna Orlova ,  Ljudmila Vasilievna Balitskaya

    IPC: C30B7/00 ,  B01J17/04 ,  C01B33/12 ,  B01J17/36

    CPC classification number: C30B7/00 ,  C30B29/18

    Abstract: A process for producing amethyst crystals which involves growing colourless quartz crystals by a hydrothermal method of a temperature drop in a high-pressure autoclave on crystalline quartz seed plates oriented parallel to pinacoid crystallographic planes {0001} or to planes inclined to said pinacoid planes at an angle of up to 15.degree. with the use of silica as a charge, said growing being effected from aqueous solutions of ammonium fluoride with a concentration of from 5 to 30% by weight and containing iron introduced into the autoclave in the form of its oxydic or hydroxydic compounds in an amount ranging from 5 to 30 g/l of the solution. Said growing of colourless quartz crystals is effected at a crystallization temperature within the range of from 150.degree. to 500.degree.C under a pressure of from 10 to 1,200 kg/cm.sup.2 and at a crystal growth rate of from 0.05 to 1.5 mm/day. It is preferable to introduce inorganic compounds of lithium or sodium into the autoclave, prior to the crystal growing, in an amount ranging from 0.5 to 2.0 g/l of the solution. The resulting grown colourless quartz crystals are exposed to an ionizing radiation. In the process of the present invention the crystal growing is effected under specified physico-chemical process parameters enabling a good reproducibility of said process. Crystal growth rates are high enough and the process according to the present invention makes it possible to produce amethyst crystals with a high colour purity (without any smoky tint) and with no cracks whatsoever.

    Abstract translation: 一种用于生产紫水晶的方法，其包括通过在高压高压釜中的温度降低的水热法生长无色石英晶体，所述高温高压釜在平行于pin类相晶面{0001}的方向上取向的晶体石英种子板上，或者在 角度为15°，使用二氧化硅作为电荷，所述生长由浓度为5至30重量％的氟化铵水溶液进行生成，并将铁以氧化物形式包含在高压釜中， 其量为5-30g / l溶液的羟基化合物。 所述无色石英晶体的生长在150℃〜500℃，压力为10〜1200kg / cm 2，结晶生长速度为0.05〜1.5mm /天的结晶温度下进行。 在晶体生长之前，优选将锂或钠的无机化合物引入高压釜中，溶液的量为0.5-2.0g / l。 将生成的无色石英晶体暴露于电离辐射。 在本发明的方法中，晶体生长是在规定的物理化学过程参数下进行的，使得所述方法具有良好的再现性。 晶体生长速率足够高，根据本发明的方法使得可以生产具有高色纯度（无任何烟雾色调）且无任何裂纹的紫水晶晶体。

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