Abstract:
A reactor of the staged adiabatic reactor type, comprises at least one heat exchanger panel, preferably a printed circuit heat exchange (PCHE) panel, interposes between adiabatic beds of catalyst, wherein the facial area of the panels and the superficial facial area of the corresponding catalyst are substantially similar, and the panels include means defining discrete passages for handling of reactants and heat transfer media, wherein the means defining passages for heat transfer media provide for at least two differing flow path directions for the heat transfer media through the heat exchanger panel whereby the occurrence of temperature bias or differentials is reduced.
Abstract:
An optical disk for recording/reproducing information have the problem of the fine irregularities on its substrate surface that causes increase of noise, under the process of forming the recording layer capable of changing physically or chemically by irradiation of laser light. The problem could deteriorate the record and reproduction characteristics and bring about a defect on a life test or on its storage ability. To solve the problem, the present invention provides the method of manufacturing an optical disk having the pits-and-lands pattern whose organic material is modified by the ultraviolet light irradiation. The transmission of the substrate is not more than 50% at one wavelength in a wavelength region from 300 to 375 nm. And, thereby the surface of an optical disk substrate is smoothed to effect the reduction of the substrate noise and the improvement of record and reproduction characteristics. Moreover, adhesiveness between the substrate and other layer formed thereon is bettered and hence the number of generated defects is reduced.
Abstract:
A processing solution is supplied from processing-solution suppliers onto the surfaces of targets to be processed while a flow rate of the processing solution is being adjusted. The processing solution is fed from a processing-solution supply source at a specific pressure via a processing-solution pressure-up feeder. The pressure of the processing solution fed via the processing-solution pressure-up feeder is adjust to another specific pressure or more at least when the processing-solution suppliers are operating simultaneously. A flow-rate detector detects the flow rate of the processing solution supplied from each processing-solution supplier. A pressure detector detects the pressure of the processing solution fed via the processing-solution pressure-up feeder. The flow-rate adjuster and the pressure adjuster are controlled based on prestored control data and detection signals from the flow-rate detector and the pressure detector so that the same amount of processing solution is supplied to the targets from the processing-solution suppliers.
Abstract:
A process tool, preferably a spin coater, includes a set of at least three arms and an adjustable rinse nozzle. The arms lift a substrate, e.g. a semiconductor wafer, from a chuck inside the process chamber after having performed the corresponding manufacturing step, e.g. coating. The contact area between the arms and the substrate is as small as possible. The rinse nozzle dispenses a solvent liquid onto the backside of the substrate, thereby removing contaminating particles located at the area of contact between the vacuum channels of the chuck and the substrate. The set of arms rotates for a homogeneous cleaning. A gas flowing out of vacuum ports of the chuck prevents the vacuum ports from being obstructed with particles. While the substrate is being lifted, the chuck can also be cleaned by dispensing the solvent liquid onto the chuck.
Abstract:
The subject of the invention is a process for the continuous dip-coating of a metal strip (1) in a tank (11) containing a liquid metal bath (12), in which process the metal strip (1) is made to run continuously through a duct (13), the lower part of which is immersed in the liquid metal bath (12), in order to define with the surface of the said bath a liquid seal (14). In the region where the strip (1) leaves the liquid metal bath (12), the liquid metal is isolated from the surface of the said bath in an isolating enclosure (20) and the metal oxide particles and intermetallic compound particles are recovered by the liquid metal flowing from this region into the said enclosure (20) and the said particles are extracted from this enclosure (20). Another subject of the invention is a plant for implementing the process.
Abstract:
The invention relates first of all to a method for covering areas of damaged protective coating on containers (1) or the like, in which, according to the invention, protective coating material is stamped on to the zone in which the damaged areas occur. The invention also describes an apparatus for carrying out the method in which a carrier unit (12) is provided for stamping protective coating material on to the damaged area. Means (6, 10, 11) are Apparatus is provided for positioning the carrier unit (12) with respect to the container (1).
Abstract:
An improved hoop support for semiconductor wafers reduces contamination of the wafer during edge beveling operations through the use of support pins that make only line contact with the wafer. The support pins are spaced around the periphery of the hoop and possess a triangular cross section. Two intersecting sides of the pins form an edge that defines the line contact with the wafer. These intersecting sides are preferably inclined relative to the wafer at an angle of between 60 and 80 degrees.
Abstract:
A method and apparatus for coating articles with coating material includes dispensing coating material from a coating dispensing device, maintaining the coating dispensing device at high-magnitude electrostatic potential, coupling articles to a conveyor on hangers constructed from electrically non-insulative strips, and conveying the articles through the dispensed coating material on the hangers.
Abstract:
A substrate holding structure having excellent corrosion resistance and airtightness, having excellent dimensional accuracy and having sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure according to the present invention comprises a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned between the ceramic base (2) and the protective cylinder (7) for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest ratio among the aforementioned three types of components in the joining layer (8).
Abstract:
Apparatus for controlling a thermal conductivity profile of a pedestal in a semiconductor wafer processing system. One embodiment of the apparatus is a thermal shim that is positioned between a wafer retention device (e.g., electrostatic chuck) and a pedestal. The shim controls the thermal conductivity between the wafer retention device and the pedestal. In one embodiment, the thermal shim has a low thermally conductive region and a high thermally conductive region. In a further embodiment, the low thermally conductive region is a hole. By having a hole in the center of the shim, thus forming an annulus, an air gap is formed between the wafer retention device and the pedestal such that less heat will be transferred through the air gap as compared to the high thermally conductive region of the shim.