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41.发明授权Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures 有权在低温下快速合成大量金属氧化物纳米线的方法公开(公告)号：US07591897B2
公开(公告)日：2009-09-22
申请号：US11385015
申请日：2006-03-20
Applicant: Mahendra Kumar Sunkara , Sreeram Vaddiraju , Miran Mozetic , Uros Cvelbar
Inventor： Mahendra Kumar Sunkara , Sreeram Vaddiraju , Miran Mozetic , Uros Cvelbar
CPC classification number: C01B13/322 , B01J19/081 , B01J19/085 , B01J19/088 , B01J19/121 , B01J19/126 , B01J19/129 , B01J2219/0847 , B01J2219/0869 , B01J2219/0886 , B82Y30/00 , C01G15/00 , C01G31/02 , C01G33/00 , C01P2002/01 , C01P2002/82 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2004/62 , C01P2004/64 , Y10S977/844
Abstract: A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of metals with oxygen plasma. Using oxygen plasma at low temperatures allows for rapid growth unlike other synthesis methods where nanomaterials take a long time to grow. Density of neutral oxygen atoms in plasma is a controlling factor for the yield of nanowires. The oxygen atom density window differs for different materials. By selecting the optimal oxygen atom density for various materials the yield can be maximized for nanowire synthesis of the metal.
Abstract translation: 用于在低温下快速合成金属氧化物纳米颗粒的方法以及促进制造长金属氧化物纳米线的方法。 该方法基于用氧等离子体处理金属。 与其他纳米材料长时间生长的其他合成方法不同，在低温下使用氧等离子体可以快速生长。 等离子体中的中性氧原子的密度是纳米线产率的一个控制因素。 不同材料的氧原子密度窗口不同。 通过选择各种材料的最佳氧原子密度，可以使纳米线合成金属的产率最大化。
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公开(公告)号：US07276317B2
公开(公告)日：2007-10-02
申请号：US11010670
申请日：2004-12-14
Applicant: JaeSung You
Inventor： JaeSung You
CPC classification number: H01L21/0268 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04
Abstract: A laser mask and method of crystallization using the same that can produce a polycrystalline silicon thin film having uniform crystallization characteristics. According to the present invention, a method of crystallization using a laser mask having a reference pattern in a first block and the reverse pattern of the reference pattern in a second block includes providing a substrate having a silicon thin film; positioning the first block of the laser mask over a portion of the silicon film and irradiating a first laser beam through the first block; and moving either the laser mask or the substrate to position the second block of the laser mask over the portion of the silicon film and irradiating a second laser beam through the second block.
Abstract translation: 激光掩模和使用该激光掩模的结晶方法可以产生具有均匀结晶特性的多晶硅薄膜。 根据本发明，使用在第一块中具有参考图案的激光掩模和第二块中的参考图案的反向图案的结晶方法包括提供具有硅薄膜的基板; 将所述激光掩模的所述第一块定位在所述硅膜的一部分上，并且将第一激光束照射通过所述第一块; 以及移动所述激光掩模或所述基板以将所述激光掩模的所述第二块定位在所述硅膜的所述部分上并且将第二激光束照射通过所述第二块。
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公开(公告)号：US20070022944A1
公开(公告)日：2007-02-01
申请号：US11459765
申请日：2006-07-25
Applicant: Kenji HORI , Shinji INOUE , Mineo ISOGAMI
Inventor： Kenji HORI , Shinji INOUE , Mineo ISOGAMI
Abstract: A method for manufacturing a boride single crystal is provided, wherein an initial melt region formed from an ingredient powder including an excessive content of boron than a stoichiometric composition of a boride is provided at one end in the longitudinal direction of a feed rod formed from a ingredient powder containing boron and a metallic element that constitute the boride, the initial melt region is heated to melt so as to form a molten zone, and the molten zone is moved toward the other end of the feed rod along the longitudinal direction, so as to grow the boride single crystal in a portion of the feed rod that the molten zone has passed. A substrate formed by the manufacturing method and particularly suitable for epitaxial growing a semiconductor layer such as a GaN-based semiconductor layer thereon is also provided.
Abstract translation: 提供了一种硼化物单晶的制造方法，其中，从由硼化物的化学计量组成构成的硼含量过多的成分粉末形成的初始熔融区域设置在由 含有硼的成分粉末和构成硼化物的金属元素，初始熔融区域被加热熔化以形成熔融区域，并且熔融区域沿着纵向移动到进料棒的另一端，因此 在熔融区已经通过的进料棒的一部分中生长硼化物单晶。 还提供了通过该制造方法形成并且特别适用于在其上外延生长诸如GaN基半导体层的半导体层的衬底。
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公开(公告)号：US20060272570A1
公开(公告)日：2006-12-07
申请号：US10573822
申请日：2004-10-19
Applicant: Ryoji Hoshi , Susumu Sonokawa
Inventor： Ryoji Hoshi , Susumu Sonokawa
CPC classification number: C30B15/206 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
Abstract: The present invention provides a method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber in accordance with Czochralski method, comprising pulling a single crystal having a defect-free region which is outside an OSF region to occur in a ring shape in the radial direction and which interstitial-type and vacancy-type defects do not exist in, wherein the pulling of the single crystal is performed with being controlled so that an average of cooling rate in passing through a temperature region of the melt point of the single crystal to 950° C. is in the range of 0.96° C./min or more and so that an average of cooling rate in passing through a temperature region of 1150° C. to 1080° C. is in the range of 0.88° C./min or more and so that an average of cooling rate in passing through a temperature region of 1050° C. to 950° C. is in the range of 0.71° C./min or more. Thereby, production margin in pulling a single crystal having a defect-free region can be considerably enlarged and therefore there can be provided a method for producing a single crystal by which production yield and productivity of the crystal having the defect-free region can be considerably improved.
Abstract translation: 本发明提供了一种通过根据切克劳斯基法从室内的原料熔体中拉出单晶而制造单晶的方法，其包括将具有在OSF区域外部的无缺陷区域的单晶拉伸到 在径向上呈环状，并且不存在间隙型和空位型缺陷，其中，通过控制单个晶体的拉伸，使得通过熔融物的温度区域的冷却速度的平均值 单晶至950℃的点在0.96℃/分钟以上的范围内，使得通过1150℃至1080℃的温度区域的冷却速度的平均值在 范围为0.88℃/分钟以上，使得通过1050℃〜950℃的温度区域的冷却速度的平均值为0.71℃/分钟以上。 因此，拉伸具有无缺陷区域的单晶的生产裕度可以大大增加，因此可以提供一种制造单晶的方法，其中具有无缺陷区域的晶体的生产率和生产率可以相当大 改进。
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45.发明申请公开(公告)号：US20060249072A1
公开(公告)日：2006-11-09
申请号：US11122703
申请日：2005-05-05
Applicant: Frank Csillag , Christopher Jones
Inventor： Frank Csillag , Christopher Jones
CPC classification number: C01F5/28 , C01B9/08 , C01F11/22 , C01G21/00 , C01P2002/84 , C30B11/00 , C30B15/00 , C30B17/00 , C30B29/12
Abstract: Improved contaminant removal from alkaline- or alkali-earth metal fluoride crystal growth material can be obtained by coprecipitating an alkaline- or alkali-earth metal fluoride with a scavenging agent during synthesis of the fluoride growth material. The coprecipitation of the alkaline- or alkali-earth metal fluoride and scavenging agent can be performed using at least one of chloride, nitrate, hydroxide and carbonate salts of the alkaline- or alkali-earth metal fluoride and scavenging agent. This provides a more intimate mixture or dispersion of the scavenging agent in solid solution or as a mechanical mixture with the alkaline- or alkali-earth metal fluoride for improved outgassing and fewer trapped impurities, leading to improved radiation hardness and bulk absorption.
Abstract translation: 通过在合成氟化物生长材料期间用清除剂共沉淀碱金属或碱土金属氟化物，可以获得从碱金属或碱土金属氟化物晶体生长材料中去除改进的污染物。 碱金属或碱土金属氟化物和清除剂的共沉淀可以使用碱金属或碱土金属氟化物和清除剂中的至少一种氯化物，硝酸盐，氢氧化物和碳酸盐来进行。 这提供了清除剂在固溶体中或作为与碱土金属或碱土金属氟化物的机械混合物的更加密切的混合物或分散体，用于改善除气和较少的捕获的杂质，导致改进的辐射硬度和体积吸收。
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Patent Agency Ranking
公开(公告)号：US20060191471A1
公开(公告)日：2006-08-31
申请号：US10545187
申请日：2004-02-06
Applicant: Leif Jensen , Jan Petersen , Per Vabengard
Inventor： Leif Jensen , Jan Petersen , Per Vabengard
CPC classification number: C30B29/06 , C30B13/32 , Y10T117/1056
Abstract: An apparatus (1) is provided for manufacturing a single crystal rod (2) from a poly crystal feed rod (3), said apparatus (1) comprising a closed chamber (4), at which chamber (4) the feed rod (3) is located, said chamber (4) comprising an annular energy supply (5) arranged around the feed rod (3) for melting off the one end (23) of the rod for providing single crystals, said apparatus comprising first moving means (6) for axial movement of the feed rod (3) and second moving means (7) for a rotating relative movement between the feed rod (3) and the annular energy supply (5). The apparatus (1) comprises a monitoring system (8) for recording the distance between the surface (9) of the feed rod (3), and an annular inwardly radially facing reference face associated with the energy supply (5), and third moving means (10) for regulating the distance. Hereby an apparatus and a method are accomplished that enable use of irregular feed rods that assume other shapes than the optimal cylindrical shape and also enable use of curved cylindrical an elliptical rods with irregular surfaces.
Abstract translation: 提供了一种用于从多晶体进料棒（3）制造单晶棒（2）的装置（1），所述装置（1）包括封闭室（4），在该室（4）处，进料棒（3） ），所述室（4）包括围绕所述进料棒（3）布置的环形能量供应（5），用于熔化所述杆的一端（23）以提供单晶，所述设备包括第一移动装置（6） ），用于进给杆（3）和第二移动装置（7）的轴向运动，用于进给杆（3）和环形能量供应（5）之间的旋转相对运动。 装置（1）包括用于记录进给杆（3）的表面（9）与与能量供应（5）相关联的环形向内径向面对的参考面之间的距离的监视系统（8），以及第三移动 用于调节距离的装置（10）。 因此，实现了一种使得能够使用不同于最佳圆柱形状的其它形状的不规则进给杆的装置和方法，并且还能够使用具有不规则表面的弯曲圆柱形椭圆形杆。
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公开(公告)号：US20060090695A1
公开(公告)日：2006-05-04
申请号：US11163855
申请日：2005-11-01
Applicant: Jyh-Chen Chen , Bing-Jung Chen , Gwo-Jiun Sheu , Farn-Shiun Hwu
Inventor： Jyh-Chen Chen , Bing-Jung Chen , Gwo-Jiun Sheu , Farn-Shiun Hwu
CPC classification number: C30B35/00 , C30B15/14 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
Abstract: A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rate of the gas and the cooling rate of the crystal so as to raise the axial temperature gradient at the solid-molten interface, the growth rate of the crystal and the productivity. The heat shield further can also reduce the possibility of microdefect nucleation to improve the quality of crystal at the same time. In addition, the length of heat shield can be adjusted according to the distance between the heat shield and the semiconductor material melt in different crucibles in case that the crucibles are made by different factories. This can reduce the cost of the heat shield manufacturing.
Abstract translation: 提供了一种隔热罩和晶体生长设备，其中为晶体生长设备提供长度可调和混合角度的隔热罩。 隔热罩适用于不仅引导惰性气体流动，而且加速了气体的流速和晶体的冷却速度，以提高固体熔融界面处的轴向温度梯度， 水晶和生产力。 隔热板还可以降低微观成核的可能性，同时提高晶体的质量。 此外，在坩埚由不同的工厂制造的情况下，可以根据隔热件和半导体材料熔体之间的距离在不同的坩埚中调节隔热件的长度。 这可以降低热屏蔽制造的成本。
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48.发明申请公开(公告)号：US20060060133A1
公开(公告)日：2006-03-23
申请号：US11229712
申请日：2005-09-20
Applicant: Katsunori Nakashima , Koji Toma , Manabu Moroishi
Inventor： Katsunori Nakashima , Koji Toma , Manabu Moroishi
CPC classification number: C30B15/02 , C30B35/00 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
Abstract: Means for supplying raw material in additional charging or recharging of solid granular raw material into molten material in the crucible, comprises a raw material supply tube to be filled with said material, a metallic support member which runs through the inside of the tube, connects with the bottom lid, and serves for descending the lid and for ascending the tube and the lid, and a configuration avoiding metallic contamination, whereby the lower-end aperture of the tube is opened for charging said material therein into the crucible in uniform circumferential distribution and in large quantity, thus achieving efficient supply operation to be widely applied for growing silicon single crystals.
Abstract translation: 用于将固体颗粒状原料再次装入坩埚内的熔融材料的原料供给装置，其特征在于，具备填充上述材料的原料供给管，穿过管内部的金属支承部件，与 底盖，用于使盖下降并且用于上升管和盖，以及避免金属污染的构造，由此打开管的下端孔以将其中的材料充入坩埚中以均匀的周向分布，并且 从而实现高效的供应操作，以广泛应用于生长硅单晶。
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49.发明授权公开(公告)号：US06989300B1
公开(公告)日：2006-01-24
申请号：US09614286
申请日：2000-07-12
Applicant: Hiroshi Tanabe
Inventor： Hiroshi Tanabe
CPC classification number: H01L21/0268 , H01L21/02532 , H01L21/02598 , H01L21/2026
Abstract: A semiconductor film formation method allowing a single-crystal semiconductor film to be formed at a desired position on a substrate with reliability is disclosed. After preparing the substrate having a non-single-crystal semiconductor film formed thereon and an optical mask having a predetermined pattern, a projection area of the optical mask is relatively positioned at the desired position on the substrate. Thereafter, the desired position of the non-single-crystal semiconductor film is irradiated with laser light through the optical mask to change an irradiated portion of the non-single-crystal semiconductor film to the single-crystal semiconductor film. Then, an insulation film is formed on at least the single-crystal semiconductor film.
Abstract translation: 公开了一种半导体膜形成方法，其可以可靠地在基板上的期望位置形成单晶半导体膜。 在制备其上形成有非单晶半导体膜的基板和具有预定图案的光掩模之后，光掩模的投影面积相对位于基板上的期望位置。 此后，通过光掩模用激光照射非单晶半导体膜的期望位置，将非单晶半导体膜的照射部分改变为单晶半导体膜。 然后，在至少单晶半导体膜上形成绝缘膜。
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50.发明申请Method and apparatus for growing multiple crystalline ribbons from a single crucible 失效从单个坩埚生长多个结晶带的方法和装置公开(公告)号：US20050051080A1
公开(公告)日：2005-03-10
申请号：US10942475
申请日：2004-09-16
Applicant: Richard Wallace
Inventor： Richard Wallace
IPC: C30B15/00 , C30B15/24 , C30B29/64 , C30B1/00 , C30B13/00 , C30B21/04 , C30B21/06 , C30B27/02 , C30B28/08 , C30B28/10 , C30B29/00 , C30B30/04
CPC classification number: C30B15/34 , C30B15/005 , C30B15/007 , C30B15/24 , C30B29/06 , Y10T117/1036 , Y10T117/1044 , Y10T117/1052
Abstract: Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width.
Abstract translation: 用于从单个坩埚同时生长多个结晶带的方法和装置采用弯液面成形器以促进具有受控宽度的离散和基本平坦的结晶带的连续生长。
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