公开(公告)号：US5551903A

公开(公告)日：1996-09-03

申请号：US326302

申请日：1994-10-19

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J29/08 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer disposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the flat surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 在电阻柱的平坦表面附近设置一层金刚石。

公开(公告)号：US5532544A

公开(公告)日：1996-07-02

申请号：US366430

申请日：1994-12-30

Applicant: Seishiro Yoshioka ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Toshihiko Takeda ,  Tetsuya Kaneko ,  Yoshikazu Banno ,  Kojiro Yokono

Inventor： Seishiro Yoshioka ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Toshihiko Takeda ,  Tetsuya Kaneko ,  Yoshikazu Banno ,  Kojiro Yokono

IPC: H01J1/316 ,  H01J9/02 ,  H04N3/14

CPC classification number: H01J1/316 ,  H01J9/027 ,  H01J2329/00

Abstract: An electron-emitting device is provided which is a laminate including a semiconductor layer with fine particles formed between a pair of opposing electrodes an electron-emitting region insulated from the electrodes is formed at a side end surface of the insulating layer formed at the part at which the electrodes oppose each other, and electrons are emitted from the electron-emitting region by applying a voltage between the electrodes.

Abstract translation: 提供了一种电子发射器件，它是一种层压体，它包括在一对相对电极之间形成有细颗粒的半导体层，在形成在绝缘层的部分处的绝缘层的侧端表面上形成有与电极绝缘的电子发射区域 电极彼此相对，并且通过在电极之间施加电压从电子发射区发射电子。

公开(公告)号：US5455597A

公开(公告)日：1995-10-03

申请号：US172060

申请日：1993-12-23

Applicant: Naoto Nakamura ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Yasue Sato

Inventor： Naoto Nakamura ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Yasue Sato

IPC: H01J1/316 ,  H01J31/12 ,  G09G3/22

CPC classification number: H01J1/316 ,  H01J31/127 ,  H01J2201/3165

Abstract: An image-forming apparatus is comprised of a substrate, an electron-emitting device which is provided on the substrate and includes an electron-emitting region between electrodes and emits electrons on application of voltage between the electrodes, and an image-forming member which forms an image on irradiation of an electron beam. A diameter S.sub.1 of the electron beam on the image-forming member in direction of application of the voltage between the electrodes is given by Equation (I):S.sub.1 =K.sub.1 .multidot.2d(V.sub.f /V.sub.a).sup.1/2 (I)where K.sub.1 is a constant and 0.8.ltoreq.K.sub.1 .ltoreq.1.0, d is a distance between the substrate and the image-forming member, V.sub.f is a voltage applied between the electrodes, and V.sub.a is a voltage applied to the image-forming member. A method for designing a diameter of an electron beam at an image-forming member face of the image-forming apparatus is comprised of a diameter S.sub.1 the electron beam at the image-forming member face in a direction of application of the voltage between the electrodes designed so as to satisfy the equation (I).

Abstract translation: 一种图像形成装置包括一基板，一电子发射装置，该电子发射装置设置在该基板上，并且包括电极之间的电子发射区域，并且在该电极之间施加电压而发射电子;以及图像形成部件，其形成 照射电子束的图像。 在电极之间施加电压方向上的图像形成部件上的电子束的直径S1由等式（I）给出：S1 = K1x2d（Vf / Va）1/2（I）其中K1是常数 并且0.8≤Ki≤1.0，d是衬底和图像形成构件之间的距离，Vf是施加在电极之间的电压，Va是施加到图像形成构件的电压。 用于设计图像形成装置的图像形成构件面处的电子束的直径的方法包括直径S1，图像形成构件的电子束在施加电极之间的电压方向上面对 设计为满足等式（I）。

公开(公告)号：US5155416A

公开(公告)日：1992-10-13

申请号：US254150

申请日：1988-10-06

Applicant: Hidetoshi Suzuki ,  Ichiro Nomura ,  Tetsuya Kaneko ,  Toshihiko Takeda ,  Yoshikazu Banno ,  Kojiro Yokono

Inventor： Hidetoshi Suzuki ,  Ichiro Nomura ,  Tetsuya Kaneko ,  Toshihiko Takeda ,  Yoshikazu Banno ,  Kojiro Yokono

IPC: G09G1/20 ,  H01J1/316 ,  H01J3/30 ,  H01J29/04 ,  H01J29/74 ,  H01J31/12 ,  H01J31/15

CPC classification number: B82Y10/00 ,  H01J1/316 ,  H01J31/127 ,  H01J31/15 ,  H01J2201/3165

Abstract: An electron beam emitting device, includes a surface conduction type of thin film device having an electron emitting area and at least a pair of electrodes for passing current through the electron emitting area, and a voltage applicator for applying a voltage independently on each of the electrodes, the voltage applicator applying a voltage on each electrode so that each of the electrodes may become higher or lower in potential relative to the other electrode.

公开(公告)号：US20210375571A1

公开(公告)日：2021-12-02

申请号：US17324923

申请日：2021-05-19

Applicant: Yoshiyuki Ando ,  Rieko Ando ,  Yukiko Noguchi ,  Emiko Takahira

Inventor： Yoshiyuki Ando

IPC: H01J1/316 ,  H01L29/786 ,  H01J19/02 ,  H01J1/308

Abstract: A vacuum channel field effect transistor includes a first insulator on a p-type semiconductor substrate, a gate electrode on the first insulator, a second insulator on the gate electrode, a drain electrode on the second insulator, and an n+ impurity diffusion layer in the surface of the p-type semiconductor substrate, the n+ impurity diffusion layer being in contact with a side wall including side faces of the first insulator, the gate electrode, and the second insulator. Application of predetermined voltages to the n+ impurity diffusion layer, the gate electrode, and the drain electrode causes charge carriers in the n+ impurity diffusion layer to travel through a vacuum or air faced by the side wall to the drain electrode, which can increase the source-drain current.

公开(公告)号：US10804061B2

公开(公告)日：2020-10-13

申请号：US16329688

申请日：2017-07-24

Applicant: PEKING UNIVERSITY

Inventor： Xianlong Wei ,  Gongtao Wu

IPC: H01J3/02 ,  H01J9/18 ,  H01J1/312 ,  H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J37/073 ,  H01J35/06

Abstract: A tunneling electro source, an array thereof and methods for making the same are provided. The tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure. The tunneling electron source includes an insulating substrate, and two conductive regions and one insulating region arranged on a surface of the insulating substrate. The insulating region is arranged between the two conductive regions and abuts on the two conductive regions. Minimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm.

公开(公告)号：US20050285497A1

公开(公告)日：2005-12-29

申请号：US11165359

申请日：2005-06-24

Applicant: Miki Tamura

Inventor： Miki Tamura

IPC: H01J1/00 ,  H01J1/316 ,  H01J31/12

CPC classification number: H01J1/316 ,  H01J31/127 ,  H01J2201/3165

Abstract: An electron-emitting device includes a first silicon oxide body containing halogen and a pair of electrically conductive films on the body.

Abstract translation: 电子发射器件包括在体上含有卤素和一对导电膜的第一氧化硅体。

公开(公告)号：US20050269936A1

公开(公告)日：2005-12-08

申请号：US11138472

申请日：2005-05-27

Applicant: Kunio Takada

Inventor： Kunio Takada

IPC: H01J1/316 ,  H01J1/62 ,  H01J9/02 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J9/027 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/3165

Abstract: An object of the present invention is to prevent a device portion from being electrostatically charged with the use of the high resistivity film, and at the same time prevent a leak current passing the device portion due to an existing high resistivity film, in an electron source with the use of a surface-conduction electron-emitting device. This process for manufacturing the electron-emitting device comprises the steps of: forming an electroconductive thin film 4 astride device electrodes; forming the high resistivity film 7 in a region except the electroconductive thin film 4 and a perimeter thereof; subjecting the electroconductive thin film 4 to forming processing, to form a fissure 5 therein; and depositing a carbon film 6 inside the fissure 5 and in a region reaching the high resistivity film 7 from the edge of the fissure 5, by applying voltage between device electrodes 2 and 3 under an atmosphere containing a carbon compound.

Abstract translation: 本发明的目的是通过使用高电阻率膜来防止器件部分被静电充电，并且同时防止在电子源中由于现有的高电阻率膜而导致的器件部分漏电流 使用表面传导电子发射器件。 用于制造电子发射器件的该方法包括以下步骤：形成横跨器件电极的导电薄膜; 在导电薄膜4以外的区域及其周边形成高电阻率膜7; 对导电薄膜4进行成形处理，在其中形成裂缝5; 并且在裂缝5内部和从裂缝5的边缘到达高电阻率膜7的区域中，通过在含有碳化合物的气氛下在器件电极2和3之间施加电压而沉积碳膜6。

公开(公告)号：US20050258734A1

公开(公告)日：2005-11-24

申请号：US11131195

申请日：2005-05-18

Applicant: Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

Inventor： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC: H01J1/30 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/316

Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

Abstract translation: 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US06946800B2

公开(公告)日：2005-09-20

申请号：US10374955

申请日：2003-02-25

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Nobuyuki Kokune ,  Tomoya Horiuchi

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Nobuyuki Kokune ,  Tomoya Horiuchi

IPC: G09G3/20 ,  G09G3/22 ,  H01J1/304 ,  H01J1/316 ,  G09G3/10

CPC classification number: G09G3/22 ,  G09G3/2011 ,  G09G2300/0439 ,  G09G2310/06 ,  G09G2320/043 ,  G09G2330/04 ,  H01J1/304 ,  H01J1/316 ,  H01J2329/00

Abstract: An electron emitter has an electric field receiving member formed on a substrate, a cathode electrode formed on one surface of the electric field receiving member, and an anode electrode formed on the one surface of the electric field receiving member, with a slit defined between the cathode electrode and the anode electrode. The electric field receiving member is made of a dielectric material. The electron emitter also has a modulation circuit for modulating a pulse signal applied between the cathode electrode and the anode electrode based on a control signal supplied from a controller such as a CPU to control at least an amount of emitted electrons.

Abstract translation: 电子发射器具有形成在基板上的电场接收部件，形成在电场接收部件的一个表面上的阴极电极和形成在电场接收部件的一个表面上的阳极电极， 阴极电极和阳极电极。 电场接收部件由电介质材料制成。 电子发射体还具有调制电路，用于基于从诸如CPU的控制器提供的控制信号来调制施加在阴极电极和阳极电极之间的脉冲信号，以控制至少一定量的发射电子。