公开(公告)号：US20050195627A1

公开(公告)日：2005-09-08

申请号：US10991705

申请日：2004-11-18

申请人： Chriswell Hutchens ,  Roger Schultz ,  Chia-Ming Liu ,  James Freeman

发明人： Chriswell Hutchens ,  Roger Schultz ,  Chia-Ming Liu ,  James Freeman

IPC分类号： G11C19/08 ,  H01L20060101 ,  H03K17/615

CPC分类号： H01L29/78615 ,  H01L29/6678 ,  H01L29/78621 ,  H01L29/78657

摘要： Memory system for storing one or more bits, systems including memory systems, and method for fabricating memory systems are disclosed. The memory system includes a substrate comprising sapphire or diamond, a magnetic random access memory (MRAM) array disposed on the substrate, and a memory controller disposed on the substrate and in communication with the MRAM array.

摘要翻译： 公开了用于存储一个或多个位的存储器系统，包括存储器系统的系统以及用于制造存储器系统的方法。 存储器系统包括包括蓝宝石或菱形的衬底，设置在衬底上的磁性随机存取存储器（MRAM）阵列，以及设置在衬底上并与MRAM阵列通信的存储器控​​制器。

公开(公告)号：US6018202A

公开(公告)日：2000-01-25

申请号：US029781

申请日：1998-03-09

申请人： Horst Meinders ,  Richard Schleupen

发明人： Horst Meinders ,  Richard Schleupen

IPC分类号： F02P3/04 ,  F02P3/045 ,  F02P3/05 ,  F02P3/055 ,  F02P9/00 ,  F02P15/10 ,  H03K17/042 ,  H03K17/615 ,  H03K17/64 ,  B60R22/00

CPC分类号： H03K17/615 ,  F02P3/0435 ,  F02P3/0453 ,  F02P3/0552 ,  F02P9/002 ,  H03K17/04213 ,  F02P15/10 ,  F02P3/051

摘要： An ignition output stage is described, in particular for an internal combustion engine, in which the output stage is constructed as a two- or three-stage Darlington and provided either with an internal single-stage or an external multiple- stage clamping via a Zener diode for protection from surges, while a short-circuit transistor is provided for protection from parasitic currents at the control terminal of the Darlington in parallel to the base-emitter junction of the ignition Darlington.

摘要翻译： PCT No.PCT / DE96 / 01140 Sec。 371日期1998年3月9日 102（e）1998年3月9日PCT PCT 1996年6月27日PCT公布。 出版物WO97 / 10432 日期1997年5月20日描述了点火输出级，特别是对于内燃机，其中输出级被构造为两阶段或三阶段达林顿，并且提供内部单级或外部多级 通过齐纳二极管钳位，以防止浪涌，同时提供短路晶体管，用于保护达林顿控制端子与点火达林顿的基极 - 发射极并联的寄生电流。

公开(公告)号：US5625312A

公开(公告)日：1997-04-29

申请号：US496243

申请日：1995-06-28

申请人： Hiroyuki Kawakami ,  Noriho Terasawa

发明人： Hiroyuki Kawakami ,  Noriho Terasawa

IPC分类号： H02M1/08 ,  G02B6/42 ,  H03K17/16 ,  H03K17/56 ,  H03K17/567 ,  H03K17/615

CPC分类号： H03K17/16 ,  G02B6/42 ,  H03K17/163 ,  H03K17/168 ,  H01L2924/13055 ,  H01L2924/13091

摘要： A control circuit for an insulated-gate semiconductor device (IGBT) 1 has a drive circuit 2, which is a series circuit constructed of an npn transistor 3 and a pnp transistor 4, and controls the switching operation of the IGBT 1 in response to an on/off signal 9S from a switching signal source 9. The control circuit includes a switching speed control means 10, a gate potential stabilizing npn transistor 20, and a stable operation extending means 30. The switching speed control means 10 gives predetermined slops to the rise and fall of the on/off signal 9S. The gate potential stabilizing npn transistor 20 is Darlington-connected to the pnp transistor 4 of the drive circuit 2 and has the emitter thereof connected to the source of the IGBT 1. The stable operation extending means 30 generates an on signal to the base of the gate potential stabilizing npn transistor 20 upon sensing a drop in the gate potential of the IGBT 1 to a threshold voltage thereof or less.

摘要翻译： 绝缘栅半导体器件（IGBT）1的控制电路具有作为由npn晶体管3和pnp晶体管4构成的串联电路的驱动电路2，并且响应于 开关信号源9S的开/关信号9S。控制电路包括开关速度控制装置10，栅极稳定npn晶体管20和稳定的操作延伸装置30.切换速度控制装置10给予预定的斜率 开/关信号9S的上升和下降。 栅极稳定型npn晶体管20与驱动电路2的pnp晶体管4成为达林顿连接，并且其发射极连接到IGBT1的源极。稳定运算延伸装置30产生导通信号到基极 在将IGBT1的栅极电位降低到阈值电压以下的情况下，选择栅极稳定型npn晶体管20。

公开(公告)号：US5541553A

公开(公告)日：1996-07-30

申请号：US398678

申请日：1995-03-06

申请人： Norio Chujo ,  Yoshihiko Hayashi ,  Akio Osaki

发明人： Norio Chujo ,  Yoshihiko Hayashi ,  Akio Osaki

IPC分类号： G01R31/28 ,  G01R31/319 ,  H03F1/52 ,  H03F3/72 ,  H03K17/615 ,  H03K17/687 ,  H03F3/04 ,  G01R31/02

CPC分类号： H03K17/687 ,  H03F1/52 ,  H03F3/72 ,  H03K17/615

摘要： An amplifier which performs the function of switching on and off its output signal includes an inverted Darlington circuit made up of an input transistor and an output transistor, a first switching circuit connected across the base and the emitter of the output transistor, and a second switching circuit connected between the emitter of the input transistor and the collector of the output transistor. Amplifier also includes means for opening the first switching circuit and closing the second switching circuit to send out an output signal, and for closing the first switching circuit and opening the second switching circuit to stop the output signal. The input and output transistors may be fabricated using vipolar or MOSFET technology because current of a small magnitude flows through the switching circuits, the switching circuits can be formed from elements that are small in size and which have small parasitic capacitance. Consequently, amplifier is capable of operating at high speeds but with low power demands. In addition, amplifier can be miniaturized or formed on a single IC chip.

摘要翻译： 执行打开和关闭其输出信号的功能的放大器包括由输入晶体管和输出晶体管组成的反向达林顿电路，连接在输出晶体管的基极和发射极之间的第一开关电路，以及第二开关 连接在输入晶体管的发射极和输出晶体管的集电极之间的电路。 放大器还包括用于打开第一开关电路并闭合第二开关电路以输出输出信号的装置，并且用于闭合第一开关电路并打开第二开关电路以停止输出信号。 输入和输出晶体管可以使用vipolar或MOSFET技术制造，因为小幅度的电流流过开关电路，开关电路可以由尺寸小且具有小寄生电容的元件形成。 因此，放大器能够以高速度运行但具有低功率需求。 此外，放大器可以在单个IC芯片上小型化或形成。

公开(公告)号：US5159213A

公开(公告)日：1992-10-27

申请号：US534773

申请日：1990-06-07

申请人： Derrell Q. Johnson

发明人： Derrell Q. Johnson

IPC分类号： H03K17/16 ,  H03K17/615 ,  H03K19/003 ,  H03K19/086 ,  H03K19/088

CPC分类号： H03K19/00353 ,  H03K19/00307

摘要： A logic gate circuit of TTL, ECL or other configuration, having an output stage including at least one transistor and a control transistor which switches the output stage to either a low or high conductive state in accordance with an input logic control signal supplied to the control transistor. In order to limit the transient change in potential of the internal voltage supply lines of the logic circuit relative to the external voltage supply to which they are connected, which occurs during logic state transitions, the base-emitter path of the output transistor is shunted by the collector-emitter path of a current bypass transistor the base of which is driven by the control transistor. The output transistor may be a composite equivalent transistor formed by a Darlington-connected pair of transistors, and the bypass transistor may itself be such a composite transistor. With increasing collector current of the output transistor an increasing proportion of the base drive current supplied thereto by the control transistor is diverted by the current bypass transistor, thereby limiting the maximum collector current of the output transistor and consequently limiting the aforesaid transient change or "bounce" in potential of the internal supply lines relative to the external voltage supply.

公开(公告)号：US4970635A

公开(公告)日：1990-11-13

申请号：US270847

申请日：1988-11-14

申请人： Sampat S. Shekhawat ,  John J. Dhyanchand

发明人： Sampat S. Shekhawat ,  John J. Dhyanchand

IPC分类号： H02M1/08 ,  H03K17/042 ,  H03K17/615 ,  H03K17/66

CPC分类号： H03K17/615 ,  H02M1/08 ,  H03K17/04213 ,  H03K17/0424 ,  H03K17/666

摘要： An inverter in accordance with the present invention includes a plurality of bipolar transistors (102) with each bipolar transistor having a freewheeling diode (108) poled in parallel with outputs of the bipolar transistor, a current transformer (112) in a positive feedback circuit (110) associated with each bipolar transistor causing a positive feedback to be applied from an output of the inverter to a base of each bipolar transistor to provide a base drive proportional to current flowing in a load coupled to the bipolar transistors, a rectifier (120), disposed in each of the positive feedback circuits for permitting current to flow to the base of the bipolar transistor when the bipolar transistor is conductive and blocking flow of current from the base to the emitter when the bipolar transistor is not forward biased.

摘要翻译： 根据本发明的反相器包括多个双极晶体管（102），每个双极晶体管具有与双极晶体管的输出并联极化的续流二极管（108），正反馈电路中的电流互感器（112） 110），其使得从反相器的输出端施加正反馈到每个双极晶体管的基极，以提供与耦合到双极晶体管的负载中流动的电流成比例的基极驱动;整流器（120） 设置在每个正反馈电路中，以在双极晶体管导通时阻止电流流向双极晶体管的基极，并且在双极晶体管未被正向偏置时阻止电流从基极流到发射极。

公开(公告)号：US4949213A

公开(公告)日：1990-08-14

申请号：US436643

申请日：1989-11-15

申请人： Kiyoaki Sasagawa ,  Hiroshi Miki ,  Tadashi Miyasaka ,  Hideki Ninomiya

发明人： Kiyoaki Sasagawa ,  Hiroshi Miki ,  Tadashi Miyasaka ,  Hideki Ninomiya

IPC分类号： H03K17/0812 ,  H03K17/082 ,  H03K17/567 ,  H03K17/615

CPC分类号： H03K17/0828 ,  H03K17/08128 ,  H03K17/567 ,  H03K17/615

摘要： In a common drive output circuit for driving dissimilar switching semiconductor devices having different drive input characteristics by turning on and off dc power supplies to apply a voltage between the drive input terminals of either one of the switching semiconductor devices through two transistors connected in a Darlington pair, the collector circuit of one of the two transistors which is not at the output stage has a diode inserted in series which has such a polarity as to permit passage of the collector current.

公开(公告)号：US4922129A

公开(公告)日：1990-05-01

申请号：US302502

申请日：1989-01-26

申请人： Michael E. Wright

发明人： Michael E. Wright

IPC分类号： H01L21/8222 ,  H01L27/082 ,  H03F3/213 ,  H03F3/343 ,  H03K17/615

CPC分类号： H03F3/3435

摘要： A Darlington output stage is shown in which the saturation voltage is reduced to the level of a single common emitter output transistor. The circuit includes a lateral feed-forward transistor that bridges the driver transistor. A resistor is included to ensure that the driver transistor is turned off when the output transistor saturates. An IC version of the circuit is set forth in detail.

公开(公告)号：US4902921A

公开(公告)日：1990-02-20

申请号：US195286

申请日：1988-05-17

申请人： Takahiro Hiramoto ,  Gourab Majumdar

发明人： Takahiro Hiramoto ,  Gourab Majumdar

IPC分类号： H03K17/56 ,  H03K17/04 ,  H03K17/567 ,  H03K17/60 ,  H03K17/615

CPC分类号： H03K17/567 ,  H03K17/0406 ,  H03K17/615

摘要： The drive circuit for driving a cascode bipolar MOS circuit (1) has a bipolar transistor (21) coupled to a bipolar transistor (11) in the bipolar MOS circuit (1) through a Darlington connection. A base current for the bipolar transistor (11) is supplied through the other bipolar transistor (21), without a transformer.

摘要翻译： 用于驱动级联双极MOS电路（1）的驱动电路具有通过达林顿连接在双极MOS电路（1）中耦合到双极晶体管（11）的双极晶体管（21）。 双极晶体管（11）的基极电流通过另一双极晶体管（21）提供，而没有变压器。

公开(公告)号：US4789842A

公开(公告)日：1988-12-06

申请号：US124173

申请日：1987-11-23

申请人： Jiri Naxera

发明人： Jiri Naxera

IPC分类号： H03K17/082 ,  H03K17/615 ,  H02H7/20

CPC分类号： H03K17/0826 ,  H03K17/615

摘要： A composite transistor device having over-current protection is disclosed, and particularly a device for protecting Darlington configuration power transistor devices. The over-current protection circuit operates to clamp the base-emitter potential of the exciter transistor thus causing the power output transistor to maintain a power output below a predetermined threshold value. This allows the control of the power output intensity so as to avoid damage to the circuit, and with a minimum of power losses due to active voltage losses.

摘要翻译： 公开了具有过电流保护的复合晶体管器件，特别是用于保护达林顿配置功率晶体管器件的器件。 过流保护电路用于钳位激励器晶体管的基极 - 发射极电位，从而使功率输出晶体管保持低于预定阈值的功率输出。 这允许控制功率输出强度，以避免损坏电路，并且由于有效的电压损耗而具有最小的功率损耗。