中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5506 records (took 0.039 seconds)

    Half-Bridge Driver Circuit, Related Integrated Circuit and System
    562.
    发明申请
    Half-Bridge Driver Circuit, Related Integrated Circuit and System 审中-公开

    公开(公告)号：US20190280635A1

    公开(公告)日：2019-09-12

    申请号：US16294573

    申请日：2019-03-06

    Applicant: STMicroelectronics S.r.l.

    Inventor： Giuseppe D'Angelo

    IPC: H02P27/08 ,  H02M7/5387 ,  H02P6/08

    Abstract: A half-bridge driver circuit is configured to generate drive signals based on control signals. A processing circuit is configured to generate high side and low side control signals based on a control signal. An edge detector is configured to generate first and second signals in response to rising and falling edges in the control signal. A state machine transitions between states in response to the first and second signals, and is configured to sequentially, in response to the first signal, set the high side and low side control signals low; in response to the second signal, set the high side control signal high and the low side control signal low; in response to the first signal, set the high side and low side control signals low; and in response to the second signal, set the high side control signal low and the low side control signal high.

    High-power and high-frequency heretostructure field-effect transistor
    563.
    发明授权
    High-power and high-frequency heretostructure field-effect transistor 有权

    公开(公告)号：US10411123B2

    公开(公告)日：2019-09-10

    申请号：US16036597

    申请日：2018-07-16

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Ferdinando Iucolano

    IPC: H01L21/331 ,  H01L21/8222 ,  H01L29/778 ,  H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

    Abstract: In an HEMT device, a gate region is formed in a wafer having a channel layer, a barrier layer, and a passivation layer, overlying each other. Drain and source electrodes are formed in the wafer, on different sides of the gate region. A dielectric layer is formed over the gate region and over the passivation layer. Selective portions of the dielectric layer are removed by a plurality of etches so as to form one or more cavities between the gate region and the drain electrode. The one or more cavities have a plurality of steps at an increasing distance from the wafer moving from the gate region to the drain electrode. The cavity is then filled with conductive material to form a field plate coupled to the source electrode, extending over the gate region, and having a surface facing the wafer and having a plurality of steps.

    CONTROL CIRCUIT FOR POWER SWITCH
    564.
    发明申请
    CONTROL CIRCUIT FOR POWER SWITCH 审中-公开

    公开(公告)号：US20190267991A1

    公开(公告)日：2019-08-29

    申请号：US16274844

    申请日：2019-02-13

    Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics, Inc. ,  STMicroelectronics (Alps) SAS

    Inventor： Vanni Poletto ,  David F. Swanson ,  Giovanni Luca Torrisi ,  Laurent Chevalier

    IPC: H03K17/687 ,  G05B11/42 ,  G01R19/165

    Abstract: A circuit for controlling a first plurality of transistors connected in parallel and a second plurality of transistors connected in parallel, includes: a first plurality of stages, a respective one of the first plurality of stages being configured to supply a first control signal to a respective one of the first plurality of transistors; and a second plurality of stages, a respective one of the second plurality of stages being configured to supply a second control signal to a respective one of the second plurality of transistors. An output current of the respective one of the first plurality of stages is regulated based on a difference between a first value representative of a sum of output currents of each stage of the first plurality of stages and a second value representative of a sum of set points assigned to the first plurality of stages.

    DETECTION METHOD AND CORRESPONDING CIRCUIT
    566.
    发明申请
    DETECTION METHOD AND CORRESPONDING CIRCUIT 审中-公开

    公开(公告)号：US20190265121A1

    公开(公告)日：2019-08-29

    申请号：US16277415

    申请日：2019-02-15

    Applicant: STMicroelectronics S.r.l.

    Inventor： Saverio Grutta ,  Enrico Rosario Alessi

    IPC: G01L23/32 ,  G10L25/51 ,  G10L25/45

    Abstract: A method includes collecting, at a building opening, air pressure signals from a pressure sensor and sound signals from a sound sensor. The method also includes sensing pressure peaks occurring in the air pressure signals and sensing sound pulses occurring in the sound signals. A joint occurrence of a pressure peak in the air pressure signals and a sound pulse in the sound signals is indicative of an opening/closing event of the building opening.

Patent Agency Ranking