Abstract:
Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal.
Abstract:
Disclosed are a method and an apparatus for transmitting and receiving coherent optical OFDM. The apparatus includes: a transmitted OFDM digital signal processing unit outputting an in-phase (I) component digital signal and a quadrature phase (Q) component digital signal; a digital-analog converter converting the in-phase (I)-component digital signal and the quadrature-phase (Q)-component digital signal into an in-phase (I)-component analog signal and a quadrature-phase (Q)-component analog signal, respectively; an adder adding an additional pilot tone signal to each of the in-phase (I)-component analog signal and the quadrature-phase (Q)-component analog signal outputted from the digital-analog converter; and an optical I/Q modulator up-converting the in-phase (I)-component analog signal added with the additional pilot tone signal and the quadrature-phase (Q)-component analog signal added with the additional pilot tone signal to an optical domain to output a coherent optical OFDM signal including the additional pilot tone signal.
Abstract:
Provided are a compound semiconductor device and a method of manufacturing the same. The semiconductor device includes: a substrate including a first region and a second region; a transistor including first to third conductive impurity layers stacked on the substrate of the first region; and a variable capacitance diode spaced apart from the transistor of the first region and including the first and second conductive impurity layers stacked on the substrate of the second region.
Abstract:
Provided are an adapter assembly and method for compensating optical fibers for a length difference. The adapter assembly includes a first adapter, a second adapter, and a member. The first adapter is configured to be connected to at least one optical communication unit. The second adapter is configured to be connected to at least another optical communication unit and be coupled to the first adapter. The member is configured to be interposed between the first and second adapters for providing an optical signal transmission path between the optical communication units. Owing to the member, a length difference between optical fibers can be compensated for.
Abstract:
Provided is an optical receiver used for an optical communication system, more particularly, a polarization split-phase shift demodulation coherent optical receiver. An optical hybrid includes a first optical splitter, a phase shift waveguide, a second optical splitter, and an optical coupler. The first optical splitter splits a first input optical signal to output first output optical signals. The phase shift waveguide receives the first output optical signals and controls and outputs the first output optical signals such that the first output optical signals have different phases. The second optical splitter splits a second input optical signal to output a plurality of second output optical signals. The optical coupler couples the first output optical signals one-to-one with the second output optical signals, respectively.
Abstract:
A method of manufacturing a photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal. A detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically separated from each other using a polyamide, whereby a PN junction surface of the photodiode is buried to reduce surface leakage current and improve electrical reliability, and the structure of the control devices can be simplified to improve image signal reception characteristics.
Abstract:
Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a backside of a substrate. The photo detector is disposed on a top surface of the substrate. The hetero-junction bipolar transistor is disposed on the top surface of the substrate. The lens condenses an incident optical signal to transmit the condensed optical signal to the photo detector.
Abstract:
Provided are a heterojunction bipolar transistor and a method of forming the same. The method includes forming an emitter electrode on an emitter capping pattern, a base electrode on a base pattern, and a collector electrode on a subcollector pattern, the subcollector pattern, the base pattern, an emitter pattern, and the emitter capping pattern being provided to a substrate; patterning a protection insulation layer and a first dummy pattern covering the emitter electrode, the base electrode, and the collector electrode, to expose the emitter electrode, the base electrode, and the collector electrode; forming a second dummy pattern to electrically separate the emitter electrode, the base electrode, and the collector electrode; forming, on the substrate provided with the second dummy pattern, an emitter electrode interconnection connected to the emitter electrode, a base electrode interconnection connected to the base electrode, and a collector electrode interconnection connected to the collector electrode; and removing the first and second dummy patterns.
Abstract:
Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor. The HBT includes a semi-insulating compound substrate, a sub-collector layer formed on the semi-insulating compound substrate, a pair of collector electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the sub-collector layer, a collector layer and a base layer disposed between the collector electrodes, a pair of base electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the base layer, an emitter layer stack disposed between the base electrodes, and an emitter electrode that is formed on the emitter layer stack, and includes a portion having a line width wider than the line width of the emitter layer stack, wherein both sidewalls of the emitter electrode are respectively aligned with inner walls of the pair of base electrodes, and sidewalls of the collector layer and the base layer are located between outer sidewalls of the pair of base electrodes of the pair of base electrodes.
Abstract:
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolated the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.