Manufacturing method of liquid crystal display
    51.
    发明申请
    Manufacturing method of liquid crystal display 有权
    液晶显示器的制造方法

    公开(公告)号:US20080286889A1

    公开(公告)日:2008-11-20

    申请号:US11490280

    申请日:2006-07-19

    IPC分类号: H01L21/70

    摘要: A method of manufacturing a liquid crystal display at a reduced cost is presented. The method entails: preparing an insulating substrate; forming a gate line and a data line on the insulating substrate to define a pixel area; forming a thin film transistor at an intersection of the gate line and the data line; forming A passivation layer on the thin film transistor; positioning a mold having a concavo-convex pattern on the organic passivation layer, pressing the mold, and forming the concavo-convex pattern on the surface of the organic passivation layer. A pixel electrode on the organic passivation layer is formed.

    摘要翻译: 提出了一种降低成本制造液晶显示器的方法。 该方法需要:制备绝缘基板; 在所述绝缘基板上形成栅极线和数据线以限定像素区域; 在栅极线和数据线的交点处形成薄膜晶体管; 在薄膜晶体管上形成钝化层; 在有机钝化层上定位具有凹凸图案的模具,按压模具,并在有机钝化层的表面上形成凹凸图案。 形成有机钝化层上的像素电极。

    Transistor, display device including the same, and manufacturing method thereof
    52.
    发明授权
    Transistor, display device including the same, and manufacturing method thereof 失效
    晶体管,包括该晶体管的显示装置及其制造方法

    公开(公告)号:US07426000B2

    公开(公告)日:2008-09-16

    申请号:US11403292

    申请日:2006-04-13

    IPC分类号: G02F1/136

    摘要: A transistor includes a wire formed on a substrate, the wire comprising a semiconductor core, a first cover enclosing a portion of the semiconductor core, and a second cover enclosing the first cover, a first electrode formed on the second cover of the wire, an insulating layer formed on the first electrode and having contact holes exposing portions the semiconductor core, and a second electrode and a third electrode connected to the wire through the contact holes.

    摘要翻译: 晶体管包括形成在基板上的导线,所述导线包括半导体芯,封装半导体芯的一部分的第一盖和封闭第一盖的第二盖,形成在导线的第二盖上的第一电极, 绝缘层,其形成在所述第一电极上,并且具有暴露所述半导体芯的部分的接触孔,以及通过所述接触孔连接到所述电线的第二电极和第三电极。

    Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same
    55.
    发明授权
    Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same 有权
    电线的接触结构及其制造方法,以及包括接触结构的薄膜晶体管基板及其制造方法

    公开(公告)号:US07303987B2

    公开(公告)日:2007-12-04

    申请号:US10475903

    申请日:2002-04-02

    IPC分类号: H01L21/4763

    摘要: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads. The sidewall of the under-layers for the gate line assembly and the data line assembly is exposed through the contact holes. An IZO-based layer is deposited onto the substrate, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the sidewall of the drain electrodes, and the subsidiary gate and data pads are connected to the sidewall of the gate and the data pads.

    摘要翻译: 在制造用于液晶显示器的薄膜晶体管阵列基板的方法中,栅极线组件在沿水平方向前进的基底上形成有铬基底层和基于铝合金的超层。 栅极线组件具有栅极线,栅电极和栅极焊盘。 栅极绝缘层沉积在绝缘基板上,使得栅极绝缘层覆盖栅极线组件。 在栅极绝缘层上依次形成半导体层和欧姆接触层。 数据线组件在欧姆接触层上形成有铬基底层和基于铝合金的超层。 数据线组件具有跨越栅极线,源电极,漏电极和数据焊盘的数据线。 保护层沉积到衬底上,并被图案化,从而形成露出漏电极,栅极焊盘和数据焊盘的接触孔。 用于栅极线组件和数据线组件的下层的侧壁通过接触孔暴露。 将基于IZO的层沉积到衬底上并构图,从而形成像素电极,辅助栅极焊盘和辅助数据焊盘。 像素电极连接到漏电极的侧壁,辅助栅极和数据焊盘连接到栅极和数据焊盘的侧壁。

    Display device and manufacturing method therefor
    56.
    发明申请
    Display device and manufacturing method therefor 有权
    显示装置及其制造方法

    公开(公告)号:US20070216823A1

    公开(公告)日:2007-09-20

    申请号:US11724889

    申请日:2007-03-15

    IPC分类号: G02F1/136

    摘要: A display device capable of minimizing leakage of a voltage applied to a storage line, comprising an insulating substrate; a first metal wiring layer which is formed on the insulating substrate; a storage line which is isolated from the first metal wiring layer and formed along the first metal wiring layer; a first insulating film which covers the first metal wiring layer and the storage line; a second metal wiring layer which is formed on the first insulating film and comprises a storage capacity forming layer corresponding to the storage line; a second insulating film which covers the second metal wiring layer and comprises a pixel contact hole exposing a portion of the storage capacity forming layer; and a pixel electrode which is formed on the second insulating film and connected to the storage capacity forming layer via the pixel contact hole.

    摘要翻译: 一种显示装置,其能够使施加到存储线的电压的泄漏最小化,包括绝缘基板; 形成在绝缘基板上的第一金属布线层; 存储线,与所述第一金属布线层隔离并且沿着所述第一金属布线层形成; 覆盖第一金属布线层和存储线的第一绝缘膜; 第二金属布线层,其形成在所述第一绝缘膜上并且包括与所述存储线相对应的存储容量形成层; 第二绝缘膜,其覆盖所述第二金属布线层并且包括暴露所述存储电容形成层的一部分的像素接触孔; 以及形成在第二绝缘膜上并经由像素接触孔连接到存储电容形成层的像素电极。

    Display device and manufacturing method
    57.
    发明申请
    Display device and manufacturing method 审中-公开
    显示装置及制造方法

    公开(公告)号:US20070114525A1

    公开(公告)日:2007-05-24

    申请号:US11604076

    申请日:2006-11-22

    IPC分类号: H01L51/00

    摘要: Embodiments of a display device comprises an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated from one another to define a channel region; a wall having one or more openings to expose the channel region, at least a portion of the source electrode, and at least a portion of the drain electrode; and an organic semiconductor layer formed in the one or more openings, the one or more openings comprising a channel part exposing the channel region and an ink guide part extending outward from the channel part. The ink-jet printing process for the display device has an improved processing margin.

    摘要翻译: 显示装置的实施例包括绝缘基板; 源电极和漏极,并且彼此分离以限定沟道区; 具有一个或多个开口以暴露沟道区域的壁,源电极的至少一部分以及漏电极的至少一部分; 以及形成在所述一个或多个开口中的有机半导体层,所述一个或多个开口包括暴露所述沟道区的沟道部分和从所述沟道部向外延伸的引导部。 用于显示装置的喷墨打印处理具有改进的处理余量。

    Display device and manufacturing method thereof
    58.
    发明申请
    Display device and manufacturing method thereof 失效
    显示装置及其制造方法

    公开(公告)号:US20070114524A1

    公开(公告)日:2007-05-24

    申请号:US11601086

    申请日:2006-11-17

    IPC分类号: H01L51/00 H01L51/40

    摘要: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

    摘要翻译: 根据本发明的实施例,显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线,形成包括彼此间隔开的源电极和漏极的电极层, 在所述栅极电极之间限定沟道区,形成第一阻挡壁,所述第一阻挡壁具有用于暴露所述沟道区的第一开口,所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域,处理第一阻挡壁的表面,去除屏蔽膜,以及在第一开口内部形成有机半导体层。

    Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same
    60.
    发明授权
    Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same 有权
    一种用于液晶显示器的薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07190421B2

    公开(公告)日:2007-03-13

    申请号:US10660749

    申请日:2003-09-12

    摘要: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode. A data wire including a source electrode and a drain electrode that are made of a same layer on the ohmic contact layers and separated from each other, and a data line connected to the source electrode and defining the pixels of a matrix array by crossing the gate line is formed on the gate insulating layer. A passivation layer covering the data wire and having contact holes exposing the gate pad and the data pad is formed, and a pixel wire including a pixel electrode, a redundant gate pad, a redundant data pad that are respectively connected to the drain electrode, the gate pad and the data pad through the contact holes.

    摘要翻译: 形成在显示区域中具有矩阵阵列的像素的开口的黑矩阵,包括公共焊盘和公共信号线的公共线,以及外围区域中的栅极焊盘以及外部区域中的对准键来对准层间薄膜 在绝缘基板上。 在绝缘基板上的像素处形成与黑矩阵重叠的边缘的红色,蓝色和绿色滤色片,并且在其上形成覆盖黑矩阵和滤色器并且具有暴露栅极接触孔的接触孔的有机绝缘层 。 在有机绝缘层上形成包括通过接触孔连接到栅极焊盘的栅极线和连接到栅极线的栅极的栅极线,并且在有机绝缘层上形成覆盖栅极线的栅极绝缘层。 半导体图案和欧姆接触层依次形成在栅电极的栅极绝缘层上。 一种数据线,包括在欧姆接触层上由相同层制成并彼此分离的源电极和漏电极,以及连接到源电极并通过跨越栅极定义矩阵阵列的像素的数据线 线形成在栅极绝缘层上。 形成覆盖数据线并具有露出栅极焊盘和数据焊盘的接触孔的钝化层,并且包括分别连接到漏电极的像素电极,冗余栅极焊盘,冗余数据焊盘的像素线, 栅极焊盘和数据焊盘通过接触孔。