公开(公告)号：US20090201722A1

公开(公告)日：2009-08-13

申请号：US12355612

申请日：2009-01-16

Applicant: Kamesh Giridhar ,  Omkaram Nalamasu ,  Steven Verhaverbeke ,  Mahalingam Venkatesan

Inventor： Kamesh Giridhar ,  Omkaram Nalamasu ,  Steven Verhaverbeke ,  Mahalingam Venkatesan

IPC: G11C11/15 ,  G11B5/66 ,  H05B6/00

CPC classification number: G11B5/855 ,  G11C11/161 ,  H01L27/222

Abstract: A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. This process may be used to fabricate memory devices, including magnetoresistive random access memory devices.

Abstract translation: 一种用于在基板上的磁性薄膜中定义磁畴的方法，包括：用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂，其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体，其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域，使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括：保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置，其被配置为（1）装配在所述室内，（2）保持多个盘，将多个盘间隔开，其中，多个盘中的每一个的两侧暴露，以及（3） 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器，由此等离子体可以在腔室中点燃，并且盘在两侧均匀地暴露于等离子体离子。 该过程可用于制造包括磁阻随机存取存储器件的存储器件。

公开(公告)号：US06537867B1

公开(公告)日：2003-03-25

申请号：US09630463

申请日：2000-08-02

Applicant: Ronald L. Freyman ,  Isik C. Kizilyalli ,  Ross A. Kohler ,  Omkaram Nalamasu ,  Mark R. Pinto ,  Joseph R. Radosevich ,  Robert M. Vella ,  George P. Watson

Inventor： Ronald L. Freyman ,  Isik C. Kizilyalli ,  Ross A. Kohler ,  Omkaram Nalamasu ,  Mark R. Pinto ,  Joseph R. Radosevich ,  Robert M. Vella ,  George P. Watson

IPC: H01L21336

CPC classification number: H01L21/32139

Abstract: A digit signal processor capable of operating at 100 MHZ with a 1.0 volt power supply. The digital signal processor is fabricated by application of strong phase-shift lithography to obtain a 0.12 &mgr;m gate dimension. A dual-mask process is utilized to improve resolution thereby producing high speed, low-voltage processors. A n+/p+ dual-Poly:Si module, and dopant penetration suppression techniques may be utilized.

Abstract translation: 一个数字信号处理器能够以1.0伏的电源工作在100MHZ。 数字信号处理器是通过应用强相移光刻技术制造的，以获得0.12μm的门尺寸。 利用双掩模工艺来提高分辨率，从而产生高速，低电压处理器。 可以使用n + / p +双Poly：Si模块和掺杂剂渗透抑制技术。

公开(公告)号：US06251546B1

公开(公告)日：2001-06-26

申请号：US09397716

申请日：1999-09-16

Applicant: Raymond Andrew Cirelli ,  Omkaram Nalamasu ,  Stanley Pau ,  George Patrick Watson

Inventor： Raymond Andrew Cirelli ,  Omkaram Nalamasu ,  Stanley Pau ,  George Patrick Watson

IPC: G03F900

CPC classification number: G03F1/32

Abstract: An improved attenuated phase-shifting mask (APSM) for use with an imaging tool for forming a patterned feature on a photoresist layer of a semiconductor wafer. The APSM has a transmissive region for substantially transmitting light therethrough to form a projected image substantially shaped as the patterned feature on the photoresist layer. The APSM also has an attenuating and phase-shifting region, contiguous with the transmissive region, for absorbing a portion of the light incident thereon and for shifting the phase of the incident light by a predetermined number of degrees relative to that of the light transmitted through the transmissive region so as to destructively interfere with the light transmitted through the transmissive region and to project a background image. The transmissive region has a dimension d dimensioned such that the intensity of the image projected by the transmissive region is darker than the intensity of the background image projected by the attenuating and phase-shifting region of the mask and that the intensity of the background image is substantially uniform.

Abstract translation: 一种与用于在半导体晶片的光致抗蚀剂层上形成图案化特征的成像工具一起使用的改进的衰减相移掩模（APSM）。 APSM具有用于基本上透射光的透射区域，以形成基本上成形为光致抗蚀剂层上的图案化特征的投影图像。 APSM还具有与透射区域相邻的衰减和相移区域，用于吸收入射到其上的光的一部分，并且将入射光的相位相对于透射的光的相位偏移预定的数量 透射区域，以便破坏性地干扰透过透射区域的光并投影背景图像。 透射区域具有维度d，其尺寸使得由透射区域投射的图像的强度比由掩模的衰减和相移区域投影的背景图像的强度更暗，并且背景图像的强度为 基本均匀。

公开(公告)号：US5998099A

公开(公告)日：1999-12-07

申请号：US83168

申请日：1998-05-22

Applicant: Francis Michael Houlihan ,  Omkaram Nalamasu ,  Thomas Ingolf Wallow

Inventor： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Thomas Ingolf Wallow

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00

CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/121

Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a substituted amine-containing component and a polymer. The substituted-amine containing component is either a photoacid generator, or an amine additive to the resist material that also contains a photoacid generator. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

Abstract translation: 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料含有取代的含胺组分和聚合物。 含取代胺的组分是光致酸产生剂，或者还含有光致酸产生剂的抗蚀剂材料的胺添加剂。 抗蚀剂材料包含垂直于聚合物的酸不稳定基团或与聚合物组合的溶解抑制剂。 酸不稳定基团显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

公开(公告)号：US5843624A

公开(公告)日：1998-12-01

申请号：US803703

申请日：1997-02-21

Applicant: Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

Inventor： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00

CPC classification number: G03F7/0045 ,  G03F7/039 ,  Y10S430/114 ,  Y10S430/146

Abstract: The present invention is directed to a process for device fabrication and resist materials that are used in the process. The resist material contains a polymer that is the polymerization product of a monomer that contains alicyclic moieties and at least one other monomer. The polymer is formed by free radical polymerization, and the resulting polymer either has alicyclic moieties incorporated into the polymer backbone or pendant to the polymer backbone via saturated hydrocarbon linkages. Other monomers are selected for polymerization with the alicyclic moiety-containing monomer on the basis of the ability of the monomer to copolymerize by free radical polymerization. Although the polymers are contemplated as useful in resist materials that are sensitive to radiation in the ultraviolet, and x-ray wavelengths as well as sensitive to electron beam radiation, the polymers are particularly advantageous for use in process in which the exposing radiation is 193 nm, because the amount of ethylenic unsaturation in these resist materials is low.

Abstract translation: 本发明涉及用于该方法的器件制造和抗蚀剂材料的方法。 抗蚀剂材料含有聚合物，其是含有脂环部分的单体和至少一种其它单体的聚合产物。 聚合物通过自由基聚合形成，并且所得聚合物或者具有引入到聚合物主链中的脂环部分或通过饱和烃键垂饰于聚合物主链。 基于单体通过自由基聚合共聚的能力，选择其它单体与含脂环部分的单体聚合。 虽然聚合物被认为可用于对紫外线和X射线波长以及对电子束辐射敏感的抗辐射材料，但是聚合物特别有利于在曝光辐射为193nm ，因为这些抗蚀剂材料中的烯属不饱和基团的量低。

公开(公告)号：US08962224B2

公开(公告)日：2015-02-24

申请号：US13774010

申请日：2013-02-22

Applicant: Banqiu Wu ,  Ajay Kumar ,  Omkaram Nalamasu

Inventor： Banqiu Wu ,  Ajay Kumar ,  Omkaram Nalamasu

IPC: G03F1/00

CPC classification number: G03F1/00 ,  G03F1/22 ,  G03F1/60

Abstract: Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.

Abstract translation: 提供了用于在光掩模衬底表面上提供硅层的方法，其中用于在EUVL应用中制造膜堆叠的最小失败。 在一个实施例中，在光掩模衬底上形成硅层的方法包括在第一衬底的表面上执行氧化处理以形成氧化硅层，其中第一衬底包括结晶硅材料，执行离子注入工艺以界定 在第一衬底中的解理面，并将氧化硅层接合到第二衬底的表面，其中第二衬底是石英光掩模。

公开(公告)号：US20140356768A1

公开(公告)日：2014-12-04

申请号：US13904716

申请日：2013-05-29

Applicant: Banqiu WU ,  Ajay KUMAR ,  Amitabh SABHARWAL ,  Leonid DORF ,  Ming-Feng WU ,  Shahid RAUF ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Omkaram NALAMASU

Inventor： Banqiu WU ,  Ajay KUMAR ,  Amitabh SABHARWAL ,  Leonid DORF ,  Ming-Feng WU ,  Shahid RAUF ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Omkaram NALAMASU

IPC: G03F1/80

CPC classification number: G03F1/80

Abstract: Embodiments of the present invention generally provide an apparatus and methods for etching photomasks using charged beam plasma. In one embodiment, an apparatus for performing a charged beam plasma process on a photomask includes a processing chamber having a chamber bottom, a chamber ceiling and chamber sidewalls defining an interior volume, a substrate support pedestal disposed in the interior volume, a charged beam generation system disposed adjacent to the chamber sidewall, and a RF bias electrode disposed in the substrate support.

Abstract translation: 本发明的实施例通常提供使用带电束等离子体蚀刻光掩模的装置和方法。 在一个实施例中，用于在光掩模上执行带电束等离子体处理的装置包括具有室底部的处理室，限定内部容积的室顶板和室侧壁，设置在内部容积中的基板支撑基座，带电束产生 系统，邻近室侧壁设置，RF偏置电极设置在基板支撑件中。

公开(公告)号：US08747942B2

公开(公告)日：2014-06-10

申请号：US12797529

申请日：2010-06-09

Applicant: Omkaram Nalamasu ,  Charles Gay ,  Victor L. Pushparaj ,  Kaushal K. Singh ,  Robert J. Visser ,  Majeed A. Foad ,  Ralf Hofmann

Inventor： Omkaram Nalamasu ,  Charles Gay ,  Victor L. Pushparaj ,  Kaushal K. Singh ,  Robert J. Visser ,  Majeed A. Foad ,  Ralf Hofmann

IPC: B05D5/12

CPC classification number: H01L31/022425 ,  B82Y10/00 ,  H01L31/0322 ,  H01L31/03529 ,  H01L31/0384 ,  H01L31/0749 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/541 ,  Y02P70/521

Abstract: Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.

Abstract translation: 太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。 太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光电太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。 光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。

公开(公告)号：US08736947B2

公开(公告)日：2014-05-27

申请号：US13501994

申请日：2010-10-22

Applicant: Byung-Sung Leo Kwak ,  Kaushal K. Singh ,  Joseph G. Gordon, II ,  Omkaram Nalamasu

Inventor： Byung-Sung Leo Kwak ,  Kaushal K. Singh ,  Joseph G. Gordon, II ,  Omkaram Nalamasu

IPC: G02F1/153 ,  G02F1/15

CPC classification number: G02F1/1523 ,  C23C14/08 ,  C23C14/34 ,  G02F1/1525 ,  G02F2202/06 ,  Y10S359/90

Abstract: The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.

Abstract translation: 本发明一般涉及电致变色（EC）装置，例如用于电致变色窗（ECW））及其制造。 EC装置可以包括透明基板; 第一透明导电层; 掺杂着色层，其中着色层掺杂剂为着色层中的原子排列提供结构稳定性; 电解质层; 在所述电解质层上的掺杂阳极层，其中所述阳极层掺杂剂在所述掺杂阳极层中提供增加的导电性; 以及第二透明导电层。 制造电致变色器件的方法可以包括依次沉积在第一透明导电层，掺杂着色层，电解质层，掺杂阳极层和第二透明导电层的衬底上，其中至少一个 掺杂着色层，电解质层和掺杂阳极层使用组合等离子体沉积工艺溅射沉积。

公开(公告)号：US08535766B2

公开(公告)日：2013-09-17

申请号：US12255833

申请日：2008-10-22

Applicant: Steven Verhaverbeke ,  Omkaram Nalamasu ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

Inventor： Steven Verhaverbeke ,  Omkaram Nalamasu ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

IPC: B05D5/00 ,  B05D3/06 ,  B05D3/04 ,  C23C14/04 ,  C23C14/16 ,  C23C14/48 ,  C23C14/58

CPC classification number: G11B5/84 ,  C23C14/185 ,  C23C14/48 ,  C23C14/5826 ,  C23C14/5833 ,  G11B5/855 ,  H01J2237/3365

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract translation: 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。