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1.发明授权公开(公告)号：US08736947B2
公开(公告)日：2014-05-27
申请号：US13501994
申请日：2010-10-22
CPC分类号： G02F1/1523 , C23C14/08 , C23C14/34 , G02F1/1525 , G02F2202/06 , Y10S359/90
摘要： The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.
摘要翻译： 本发明一般涉及电致变色（EC）装置，例如用于电致变色窗（ECW））及其制造。 EC装置可以包括透明基板; 第一透明导电层; 掺杂着色层，其中着色层掺杂剂为着色层中的原子排列提供结构稳定性; 电解质层; 在所述电解质层上的掺杂阳极层，其中所述阳极层掺杂剂在所述掺杂阳极层中提供增加的导电性; 以及第二透明导电层。 制造电致变色器件的方法可以包括依次沉积在第一透明导电层，掺杂着色层，电解质层，掺杂阳极层和第二透明导电层的衬底上，其中至少一个 掺杂着色层，电解质层和掺杂阳极层使用组合等离子体沉积工艺溅射沉积。
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2.发明申请公开(公告)号：US20150056744A1
公开(公告)日：2015-02-26
申请号：US13570190
申请日：2012-08-08
IPC分类号： H01L31/18
CPC分类号： H01L31/1876 , H01L31/02164 , H01L31/02167 , H01L31/024 , H01L31/0463 , H01L31/18 , H01M4/0471 , H01M6/40 , H01M10/0436
摘要： Selective removal of specified layers of thin film structures and devices, such as solar cells, electrochromics, and thin film batteries, by laser direct patterning is achieved by including heat and light blocking layers in the device/structure stack immediately adjacent to the specified layers which are to be removed by laser ablation. The light blocking layer is a layer of metal that absorbs or reflects a portion of the laser energy penetrating through the dielectric/semiconductor layers and the heat blocking layer is a conductive layer with thermal diffusivity low enough to reduce heat flow into underlying metal layer(s), such that the temperature of the underlying metal layer(s) does not reach the melting temperature, Tm, or in some embodiments does not reach (Tm)/3, of the underlying metal layer(s) during laser direct patterning.
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3.发明授权Thin film structures and devices with integrated light and heat blocking layers for laser patterning 有权具有集成光和热阻挡层的薄膜结构和器件，用于激光图案化公开(公告)号：US08993443B2
公开(公告)日：2015-03-31
申请号：US13570190
申请日：2012-08-08
IPC分类号： H01L21/302 , H01L21/461 , H01L31/18
CPC分类号： H01L31/1876 , H01L31/02164 , H01L31/02167 , H01L31/024 , H01L31/0463 , H01L31/18 , H01M4/0471 , H01M6/40 , H01M10/0436
摘要： Selective removal of specified layers of thin film structures and devices, such as solar cells, electrochromics, and thin film batteries, by laser direct patterning is achieved by including heat and light blocking layers in the device/structure stack immediately adjacent to the specified layers which are to be removed by laser ablation. The light blocking layer is a layer of metal that absorbs or reflects a portion of the laser energy penetrating through the dielectric/semiconductor layers and the heat blocking layer is a conductive layer with thermal diffusivity low enough to reduce heat flow into underlying metal layer(s), such that the temperature of the underlying metal layer(s) does not reach the melting temperature, Tm, or in some embodiments does not reach (Tm)/3, of the underlying metal layer(s) during laser direct patterning.
摘要翻译： 通过激光直接图案化来选择性去除指定层的薄膜结构和器件，例如太阳能电池，电致变色和薄膜电池，通过将热和光阻挡层包括在紧邻指定层的器件/结构堆叠中来实现 通过激光消融去除。 遮光层是吸收或反射透过电介质/半导体层的激光能量的一部分的金属层，并且热阻层是导热层，其热扩散率足够低以减少进入下面的金属层的热量 ），使得下一个金属层的温度在激光直接图案化期间未达到熔融温度Tm，或在一些实施例中未达到下面金属层的（Tm）/ 3）。
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公开(公告)号：US20110304899A1
公开(公告)日：2011-12-15
申请号：US13139508
申请日：2009-12-01
CPC分类号： B32B17/10981 , B32B17/10045 , B32B17/10055 , B32B17/10513 , B32B17/10761 , B32B17/10788 , E06B3/6722 , E06B9/24 , E06B2009/2464 , G02F1/1533 , Y10S359/90 , Y10T156/1075 , Y10T156/12
摘要： A method of manufacturing electrically tintable window glass with a variety of sizes and functionalities is described. The method comprises: (a) providing a large format glass substrate; (b) fabricating a plurality of electrically tintable thin film devices on the large format glass substrate; (c) cutting the large format glass substrate into a plurality of electrically tintable pieces, each electrically tintable piece including one of the plurality of electrically tintable thin film devices; (d) providing a plurality of window glass pieces; (e) matching each one of the plurality of electrically tintable pieces with a corresponding one of the plurality of window glass pieces; and (f) laminating each of the matched electrically tintable pieces and window glass pieces. The lamination may result in the electrically tintable device either being sandwiched between the glass substrate and the window glass piece or on the surface of the laminated pieces. The electrically tintable device is an electrochromic device.
摘要翻译： 描述了制造具有各种尺寸和功能性的可着色的窗玻璃的方法。 该方法包括：（a）提供大幅面玻璃基板; （b）在大幅面玻璃基板上制造多个可着色的薄膜装置; （c）将大幅面玻璃基板切割成多个可着色的片，每个可着色的片包括多个可着色的薄膜器件中的一个; （d）提供多个窗玻璃片; （e）将所述多个电致可着色件中的每一个与所述多个窗玻璃件中的相应一个匹配; 和（f）层合每个匹配的可着色件和窗玻璃片。 层压可能导致可着色的装置夹在玻璃基板和窗玻璃片之间或层压片的表面上。 电致色装置是电致变色装置。
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公开(公告)号：US07710671B1
公开(公告)日：2010-05-04
申请号：US12333676
申请日：2008-12-12
CPC分类号： B32B17/10981 , B32B17/10045 , B32B17/10055 , B32B17/10513 , B32B17/10761 , B32B17/10788 , E06B3/6722 , E06B9/24 , E06B2009/2464 , G02F1/1533 , Y10S359/90 , Y10T156/1075 , Y10T156/12
摘要： A method of manufacturing electrically tintable window glass with a variety of sizes and functionalities is described. The method comprises: (a) providing a large format glass substrate; (b) fabricating a plurality of electrically tintable thin film devices on the large format glass substrate; (c) cutting the large format glass substrate into a plurality of electrically tintable pieces, each electrically tintable piece including one of the plurality of electrically tintable thin film devices; (d) providing a plurality of window glass pieces; (e) matching each one of the plurality of electrically tintable pieces with a corresponding one of the plurality of window glass pieces; and (f) laminating each of the matched electrically tintable pieces and window glass pieces. The lamination may result in the electrically tintable device either being sandwiched between the glass substrate and the window glass piece or on the surface of the laminated pieces. The electrically tintable device is an electrochromic device.
摘要翻译： 描述了制造具有各种尺寸和功能性的可着色的窗玻璃的方法。 该方法包括：（a）提供大幅面玻璃基板; （b）在大幅面玻璃基板上制造多个可着色的薄膜装置; （c）将大幅面玻璃基板切割成多个可着色的片，每个可着色的片包括多个可着色的薄膜器件中的一个; （d）提供多个窗玻璃片; （e）将所述多个电致可着色件中的每一个与所述多个窗玻璃件中的相应一个匹配; 和（f）层合每个匹配的可着色件和窗玻璃片。 层压可能导致可着色的装置夹在玻璃基板和窗玻璃片之间或层压片的表面上。 电致色装置是电致变色装置。
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6.发明申请ARRANGEMENT AND METHOD FOR REMOVING ALKALI- OR ALKALINE EARTH-METALS FROM A VACUUM COATING CHAMBER 有权从真空涂料室中除去碱金属或碱土金属的方法和方法公开(公告)号：US20090293909A1
公开(公告)日：2009-12-03
申请号：US12130572
申请日：2008-05-30
申请人： STEFAN BANGERT , Jose Manuel Dieguez-Campo , Michael Koenig , Nety M. Krishna , Byung-Sung Leo Kwak
发明人： STEFAN BANGERT , Jose Manuel Dieguez-Campo , Michael Koenig , Nety M. Krishna , Byung-Sung Leo Kwak
CPC分类号： C23C14/564
摘要： The invention relates to a cleaning method in which from a vacuum coating chamber (3) of a coating installation (1) for the coating of substrates (2) with alkali- or alkaline earth-metals, residues of alkali- or alkaline earth-metals are removed. For this purpose into the chamber (3) a gas from the group of N2, O2 or air is introduced, which reacts with the alkali- or alkaline earth-metals to form the corresponding solid compounds. Water can additionally be introduced into the vacuum coating chamber (3).After the alkali- or alkaline earth-metals have reacted with the gas, the corresponding solid compound is removed from the vacuum coating chamber.
摘要翻译： 本发明涉及一种清洁方法，其中从用碱性或碱土金属涂覆底物（2）的涂覆装置（1）的真空涂敷室（3），碱金属或碱土金属的残留物 被删除。 为此，在室（3）中，引入来自N2，O2或空气的气体，其与碱金属或碱土金属反应形成相应的固体化合物。 另外可以将水引入真空涂敷室（3）。 碱金属或碱土金属与气体反应后，从真空镀膜室中除去相应的固体化合物。
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公开(公告)号：US20140007418A1
公开(公告)日：2014-01-09
申请号：US13523797
申请日：2012-06-14
申请人： Daoying Song , Chong Jiang , Byung-Sung Leo Kwak
发明人： Daoying Song , Chong Jiang , Byung-Sung Leo Kwak
IPC分类号： H01M6/00
CPC分类号： H01M6/40 , B01J19/121 , B01J2219/0879 , B01J2219/12 , C01B21/097 , C01G51/42 , C01P2006/40 , H01M2/026 , H01M2/0277 , H01M2/26 , H01M4/04 , H01M4/0426 , H01M4/139 , H01M4/1395 , H01M4/382 , H01M4/525 , H01M6/005 , H01M6/185 , H01M6/186 , H01M10/0404 , H01M10/0436 , H01M10/052 , H01M10/0562 , H01M10/0585 , H01M2220/30 , H01M2300/0068 , Y10T29/49108
摘要： Thin film batteries (TFB) are fabricated by a process which eliminates and/or minimizes the use of shadow masks. A selective laser ablation process, where the laser patterning process removes a layer or stack of layers while leaving layer(s) below intact, is used to meet certain or all of the patterning requirements. For die patterning from the substrate side, where the laser beam passes through the substrate before reaching the deposited layers, a die patterning assistance layer, such as an amorphous silicon layer or a microcrystalline silicon layer, may be used to achieve thermal stress mismatch induced laser ablation, which greatly reduces the laser energy required to remove material.
摘要翻译： 薄膜电池（TFB）是通过消除和/或最小化使用荫罩的方法来制造的。 选择性激光烧蚀工艺，其中激光图案化工艺去除一层或多层的层，同时使层下面完整，用于满足某些或所有图案化要求。 对于从衬底侧进行管芯图案化，其中激光束在到达沉积层之前通过衬底，可以使用诸如非晶硅层或微晶硅层的管芯图案辅助层来实现热应力失配诱导激光器 消融，这大大降低了去除材料所需的激光能量。
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公开(公告)号：US07179736B2
公开(公告)日：2007-02-20
申请号：US10966074
申请日：2004-10-14
申请人： Byung-Sung Leo Kwak , Peter Burke , Sey-Shing Sun
发明人： Byung-Sung Leo Kwak , Peter Burke , Sey-Shing Sun
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , C25D5/18 , C25D7/123 , H01L21/2885 , H01L21/7684
摘要： The present invention relates to a method of fabricating planar semiconductor wafers. The method comprises forming a dielectric layer on a semiconductor wafer surface, the semiconductor wafer surface having vias, trenches and planar regions. A barrier and seed metal layer is then formed on the dielectric layer. The wafer is next place in a plating bath that includes an accelerator, which tends to collect in the vias and trenches to accelerate the rate of plating in these areas relative to the planar regions of the wafer. After the gapfill point is reached, the plating is stopped by removing the plating bias on wafer. An equilibrium period is then introduced into the process, allowing higher concentrations of accelerator additives and other components of the bath)] above the via and trench regions to equilibrate in the plating bath. The bulk plating on the wafer is resumed after equilibration. Over-plating on the wafer in the areas of the vias and trenches is therefore avoided, resulting in a more planar metallization layer on the wafer, without the use of a leveler additive which adversely affects the gapfill capability.
摘要翻译： 本发明涉及一种制造平面半导体晶片的方法。 该方法包括在半导体晶片表面上形成电介质层，该半导体晶片表面具有通孔，沟槽和平面区域。 然后在电介质层上形成阻挡层和种子金属层。 晶片是包含加速器的镀液中的下一个位置，该加速器倾向于在通路和沟槽中收集，以加速相对于晶片的平面区域在这些区域中的电镀速率。 达到间隙填充点后，通过去除晶片上的电镀偏压来停止电镀。 然后在该过程中引入平衡时段，允许较高浓度的促进剂添加剂和浴中的其它组分）]在通孔和沟槽区域上方在电镀浴中平衡。 平衡后恢复晶片上的块体电镀。 因此避免了在通孔和沟槽区域上的晶片上的过电镀，导致晶片上更平面的金属化层，而不使用不利地影响间隙填充能力的矫直添加剂。
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公开(公告)号：US20130266741A1
公开(公告)日：2013-10-10
申请号：US13533927
申请日：2012-06-26
申请人： Daoying Song , Chong Jiang , Byung-Sung Leo Kwak
发明人： Daoying Song , Chong Jiang , Byung-Sung Leo Kwak
CPC分类号： C23C14/5806 , C23C14/08 , C23C14/24 , C23C14/34 , C23C14/3485 , C23C16/56 , G02F1/155 , H01M4/0404 , H01M4/0423 , H01M4/0426 , H01M4/131 , H01M4/1391 , H01M4/525 , H01M6/40 , H01M10/0525 , H01M10/0585 , H01M14/005 , Y02E60/122 , Y02P70/54
摘要： Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer.
摘要翻译： 微波辐射可以施加到用于电化学装置的各个层的快速热处理（RTP）（包括退火，结晶，致密化，成型等）的电化学装置，以及包括体薄膜电池和薄的电池的装置堆 胶片电致变色装置。 制造电化学装置的方法可以包括：在衬底上沉积电化学装置的层; 并对该层进行微波退火，其中微波退火包括在层中选择具有优先微波能量吸收的退火条件。 一种用于形成电化学装置的装置可以包括：在衬底上沉积电化学装置层的第一系统; 以及第二系统以对所述层进行微波退火，其中所述第二系统被配置为在所述器件层中提供优先的微波能量吸收。
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公开(公告)号：US09593405B2
公开(公告)日：2017-03-14
申请号：US13523790
申请日：2012-06-14
申请人： Chong Jiang , Byung-Sung Leo Kwak
发明人： Chong Jiang , Byung-Sung Leo Kwak
CPC分类号： C23C14/0676 , C23C14/08 , C23C14/5826 , C23C14/586
摘要： A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.
摘要翻译： 沉积电介质薄膜的方法可以包括：沉积介电薄层; 阻止介电层的沉积，如果需要则改变腔中的气体; 在衬底附近诱导和维持等离子体，以提供沉积的电介质层的离子轰击; 并重复沉积，停止和引导和维持步骤，直到沉积所需的电介质厚度。 该方法的变型可以包括：代替重复步骤：沉积较厚质量的电介质层; 沉积一层高质量的电介质; 阻止介电层的沉积，如果需要则改变腔中的气体; 以及在衬底附近诱导和维持等离子体，以提供沉积的电介质层的离子轰击。 电介质的厚层可以比薄层更快地沉积。
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