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    PROJECTION APPARATUS AND METHOD FOR GENERATING AN IMAGE BY MEANS OF A PROJECTION APPARATUS
    51.
    发明申请
    PROJECTION APPARATUS AND METHOD FOR GENERATING AN IMAGE BY MEANS OF A PROJECTION APPARATUS 有权

    公开(公告)号：US20230008186A1

    公开(公告)日：2023-01-12

    申请号：US17781932

    申请日：2020-11-30

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Daniel RICHTER

    IPC: H04N9/31

    Abstract: A projection apparatus includes a light source for emitting light with an initial spectral distribution, an optical element, and a projection surface. The optical element is arranged in a beam path of light emitted from the light source between the light source and the projection surface. The optical element includes a number of pixels. The pixels of the optical element are each configured to convert light with the initial spectral distribution into light with a predetermined final spectral distribution different from the initial spectral distribution.

    IMPROVEMENTS IN LIGHT DETECTION WITH SEMICONDUCTOR PHOTODIODES
    53.
    发明申请
    IMPROVEMENTS IN LIGHT DETECTION WITH SEMICONDUCTOR PHOTODIODES 有权

    公开(公告)号：US20220406954A1

    公开(公告)日：2022-12-22

    申请号：US17790523

    申请日：2021-01-08

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Massimo Cataldo MAZZILLO ,  Tim BOESCKE ,  Wolfgang ZINKL

    IPC: H01L31/107 ,  H01L31/109 ,  H01L31/118

    Abstract: A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612a) thus forming a heterojunction, and the photodiode (600) further comprises a precursor layer (620) arranged between the bulk structure (610) and the light absorption layer (614), the light absorption layer (614) being grown on the precursor layer.

    Method for Producing a Lighting Device
    54.
    发明申请
    Method for Producing a Lighting Device 有权

    公开(公告)号：US20220399314A1

    公开(公告)日：2022-12-15

    申请号：US17769407

    申请日：2020-12-14

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Laura Kreiner ,  Jens Mueller

    IPC: H01L25/075 ,  H01L33/00 ,  H01L21/66

    Abstract: In an embodiment a method for producing a lighting device includes providing a wafer assemblage having a semiconductor layer sequence arranged on a carrier substrate, separating the wafer assemblage into a plurality of first optoelectronic semiconductor chips, each comprising a section of the semiconductor layer sequence and of the carrier substrate, transferring at least some of the first optoelectronic semiconductor chips to a first auxiliary carrier, wherein the first auxiliary carrier has contact pads on a main surface, wherein the contact pads are surrounded and delimited in each case by a contour, and wherein each of the first optoelectronic semiconductor chips is arranged on a contact pad, cutting, on the first auxiliary carrier, to size the first optoelectronic semiconductor chips in order to adapt the first optoelectronic semiconductor chips to a predefined shape such that the each first optoelectronic semiconductor chip lies completely within the contour of an assigned contact pad, and transferring the first optoelectronic semiconductor chips from the first auxiliary carrier to a carrier.

    Optoelectronic light source and data glasses
    58.
    发明授权
    Optoelectronic light source and data glasses 有权

    公开(公告)号：US11490058B2

    公开(公告)日：2022-11-01

    申请号：US17200068

    申请日：2021-03-12

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jörg Erich Sorg ,  Alan Lenef

    IPC: G03B21/14 ,  H04N9/31 ,  H01S5/02255 ,  H01S5/00

    Abstract: Provided is an optoelectronic light source that includes a plurality of semiconductor lasers each configured to emit a laser beam and arranged on a mounting platform, and a redirecting optical element configured to redirect the laser beams. The redirecting optical element includes for each one of the plurality of semiconductor lasers a separate reflection zone, the reflection zones are shaped differently from one another, and after passing the redirecting optical element, the laser beams run in a common plane.

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