公开(公告)号：US12037701B2

公开(公告)日：2024-07-16

申请号：US17218892

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Shu-Kwan Danny Lau ,  Brian H. Burrows ,  Lori Washington ,  Herman Diniz ,  Martin A. Hilkene ,  Richard O. Collins ,  Nyi O. Myo ,  Manish Hemkar ,  Schubert S. Chu

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/105 ,  H01L21/6719 ,  C30B25/08

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

公开(公告)号：US11842907B2

公开(公告)日：2023-12-12

申请号：US16923949

申请日：2020-07-08

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Danny Lau ,  Toshiyuki Nakagawa ,  Zhiyuan Ye

IPC: H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  B23K26/00 ,  B23K26/08 ,  H01L21/687 ,  H01L21/268 ,  B23K26/06 ,  B23K103/00 ,  F27D9/00

CPC classification number: H01L21/67115 ,  B23K26/0006 ,  B23K26/0648 ,  B23K26/0869 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/268 ,  H01L21/68764 ,  B23K2103/56 ,  F27D2009/007

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

公开(公告)号：US11604089B2

公开(公告)日：2023-03-14

申请号：US17247091

申请日：2020-11-30

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Justin Hough ,  Marcel E. Josephson

IPC: G01F25/17 ,  G01F1/36 ,  G05D7/06 ,  G05B23/02 ,  G01F1/50 ,  G01F1/38 ,  G01F25/10 ,  G01F1/42 ,  H01L21/67

Abstract: An electronic device manufacturing system includes: a gas supply; a mass flow controller (MFC) coupled to the gas supply; an inlet coupled to the MFC; an outlet; a control volume serially coupled to the inlet to receive a gas flow; and a flow restrictor serially coupled to the control volume and the outlet. A controller is adapted to allow the gas supply to flow gas through the control volume and the flow restrictor to achieve a stable pressure in the control volume, terminate the gas flow from the gas supply, and measure a rate of pressure decay in the control volume over time. A process chamber is coupled to a flow path, which is coupled to the mass flow controller, the process chamber to receive one or more process chemistries via the mass flow controller.

公开(公告)号：US11519773B2

公开(公告)日：2022-12-06

申请号：US16777467

申请日：2020-01-30

Applicant: Applied Materials, Inc.

Inventor： Kevin M. Brashear ,  Zhiyuan Ye ,  Justin Hough ,  Jaidev Rajaram ,  Marcel E. Josephson ,  Ashley M. Okada

IPC: G01F25/10 ,  G01F1/86 ,  G01F1/40

Abstract: Mass flow verification systems and apparatus may verify mass flow rates of mass flow controllers (MFCs) based on choked flow principles. These systems and apparatus may include a plurality of differently-sized flow restrictors coupled in parallel. A wide range of flow rates may be verified via selection of a flow path through one of the flow restrictors based on an MFC's set point. Mass flow rates may be determined via pressure and temperature measurements upstream of the flow restrictors under choked flow conditions. Methods of verifying a mass flow rate based on choked flow principles are also provided, as are other aspects.

公开(公告)号：US11261538B1

公开(公告)日：2022-03-01

申请号：US17027385

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  Zuoming Zhu ,  Patricia M. Liu ,  Shu-Kwan Lau ,  Flora Fong-Song Chang ,  Enle Choo ,  Zhiyuan Ye

IPC: C30B25/16 ,  H01L21/67 ,  C30B25/10

Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

公开(公告)号：US11021795B2

公开(公告)日：2021-06-01

申请号：US16170255

申请日：2018-10-25

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Koji Nakanishi ,  Toshiyuki Nakagawa ,  Zuoming Zhu ,  Zhiyuan Ye ,  Joseph M. Ranish ,  Nyi O. Myo ,  Errol Antonio C. Sanchez ,  Schubert S. Chu

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52 ,  B23K26/352

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US10770319B2

公开(公告)日：2020-09-08

申请号：US16273902

申请日：2019-02-12

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Danny Lau ,  Zhiyuan Ye ,  Zuoming Zhu ,  Nyi O. Myo ,  Errol Antonio C. Sanchez ,  Schubert S. Chu

IPC: H01L21/67 ,  H01L21/687 ,  B23K26/0622

Abstract: Embodiments described herein provide processing chambers that include an enclosure for a processing volume, a rotatable support within the enclosure, the support having a shaft that extends outside the enclosure, wherein the shaft has a signal feature located outside the processing volume, an energy module within the enclosure, wherein the shaft extends through the energy module, one or more directed energy sources coupled to the enclosure, and one or more signalers positioned proximate to the signal feature, each signaler coupled to at least one of the directed energy sources.

公开(公告)号：US10684159B2

公开(公告)日：2020-06-16

申请号：US15194360

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Kevin M. Brashear ,  Zhiyuan Ye ,  Justin Hough ,  Jaidev Rajaram ,  Marcel E. Josephson ,  Ashley M. Okada

IPC: G01F25/00 ,  G01F1/86 ,  G01F1/40

Abstract: Mass flow verification systems and apparatus may verify mass flow rates of mass flow controllers (MFCs) based on choked flow principles. These systems and apparatus may include a plurality of differently-sized flow restrictors coupled in parallel. A wide range of flow rates may be verified via selection of a flow path through one of the flow restrictors based on an MFC's set point. Mass flow rates may be determined via pressure and temperature measurements upstream of the flow restrictors under choked flow conditions. Methods of verifying a mass flow rate based on choked flow principles are also provided, as are other aspects.

公开(公告)号：US20200166400A1

公开(公告)日：2020-05-28

申请号：US16777467

申请日：2020-01-30

Applicant: Applied Materials, Inc.

Inventor： Kevin M. Brashear ,  Zhiyuan Ye ,  Justin Hough ,  Jaidev Rajaram ,  Marcel E. Josephson ,  Ashley M. Okada

IPC: G01F25/00 ,  G01F1/40 ,  G01F1/86

Abstract: Mass flow verification systems and apparatus may verify mass flow rates of mass flow controllers (MFCs) based on choked flow principles. These systems and apparatus may include a plurality of differently-sized flow restrictors coupled in parallel. A wide range of flow rates may be verified via selection of a flow path through one of the flow restrictors based on an MFC's set point. Mass flow rates may be determined via pressure and temperature measurements upstream of the flow restrictors under choked flow conditions. Methods of verifying a mass flow rate based on choked flow principles are also provided, as are other aspects.

公开(公告)号：US10453721B2

公开(公告)日：2019-10-22

申请号：US15070342

申请日：2016-03-15

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D11/13

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.