公开(公告)号：US20070131877A9

公开(公告)日：2007-06-14

申请号：US10062666

申请日：2002-02-05

申请人： Takashi Hiroi ,  Masahiro Watanabe ,  Asahiro Kuni ,  Maki Tanaka ,  Munenori Fukunishi ,  Hiroshi Miyai ,  Yasuhiko Nara ,  Mitsunobu Isobe

发明人： Takashi Hiroi ,  Masahiro Watanabe ,  Asahiro Kuni ,  Maki Tanaka ,  Munenori Fukunishi ,  Hiroshi Miyai ,  Yasuhiko Nara ,  Mitsunobu Isobe

IPC分类号： G01N23/00

CPC分类号： G06K9/6211 ,  G01N23/22 ,  G06K9/033 ,  G06K2209/19 ,  G06T7/001 ,  G06T2207/30148

摘要： Conventionally, defect data outputted by an inspection system comprised only characteristic quantitative data, such as coordinate data, area, and projected length, and only the coordinate data for moving to a defect location could be utilized effectively. By contrast, the present invention, by using image data in addition to characteristic quantitative data as the defect data for an inspection system, enables the retrieval of image data via an outside results confirmation system. Further, in the case of defect data of a plurality of substrates, it is enabled to display a defect image during inspection by the fact that similar defects are retrieved via images and retrieval results are displayed as trends makes it possible to display a defect image during inspection by searching similar defects on images and displaying them as a trend, designating a substrate on the trend, thereby displaying the defect map thereof and designating a defect on the defect map.

摘要翻译： 通常，由检查系统输出的缺陷数据仅包括诸如坐标数据，面积和投影长度的特征定量数据，并且仅有用于移动到缺陷位置的坐标数据可以被有效地利用。 相比之下，本发明通过使用除了特征定量数据之外的图像数据作为检查系统的缺陷数据，能够经由外部结果确认系统检索图像数据。 此外，在多个基板的缺陷数据的情况下，能够通过图像检索相似缺陷的事实在检查期间显示缺陷图像，并且检索结果被显示为趋势，使得可以在显示缺陷图像期间显示缺陷图像 通过搜索图像上的类似缺陷并将其显示为趋势，指定趋势上的基板，从而显示其缺陷图并指定缺陷图上的缺陷来进行检查。

公开(公告)号：US07164128B2

公开(公告)日：2007-01-16

申请号：US10995388

申请日：2004-11-24

申请人： Atsushi Miyamoto ,  Maki Tanaka ,  Hidetoshi Morokuma

发明人： Atsushi Miyamoto ,  Maki Tanaka ,  Hidetoshi Morokuma

IPC分类号： G01N23/00 ,  G01B11/14

CPC分类号： H01J37/28 ,  G01B15/04 ,  G01N23/2251 ,  H01J2237/226 ,  H01J2237/2814

摘要： It is predicted that an observational direction (or an incident direction of an electron beam) in an observed image actually obtained has some errors compared to a set value. The error portion affects the analysis of the observed image later. Therefore, a convergent electron beam is irradiated on a specimen with a known shape, electrons discharged from the specimen surface are detected, an image of the electron is obtained, an incident direction of the convergent electron beam is estimated based on a geometric deformation on an image of the specimen with a known shape, and a 3D shape or a shape of a cross section of a specimen to be observed from a SEM image of the specimen to be observed is obtained by use of the information of the incident direction of the estimated convergent electron beam.

摘要翻译： 预测实际获得的观察图像中的观察方向（或电子束的入射方向）与设定值相比具有一些误差。 错误部分稍后影响观察图像的分析。 因此，会聚电子束被照射在具有已知形状的样本上，检测从试样表面排出的电子，获得电子的图像，基于上述几何变形来估计会聚电子束的入射方向 通过使用估计的样本的入射方向的信息，获得具有已知形状的样本的图像，以及待观察的样本的SEM图像将要观察的样本的3D形状或截面形状 会聚电子束。

公开(公告)号：US20060108526A1

公开(公告)日：2006-05-25

申请号：US11320752

申请日：2005-12-30

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G21K7/00

CPC分类号： G01N23/225 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2814 ,  H01L21/32137 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

摘要翻译： 通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。 仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。 根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。 此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。 本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。 此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

公开(公告)号：US07026830B2

公开(公告)日：2006-04-11

申请号：US10379555

申请日：2003-03-06

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31/305 ,  G01R31/28

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.

摘要翻译： 使绝缘材料的图案能够在线检查。 通过抗蚀剂膜形成图案的图案化晶片40与SEM 3相对地放置在图案化晶片检查装置1的样本台21上。 从电子枪11发射大电流的电子束10，以高扫描速度扫描图案化晶片的图案一次。 通过二次电子检测器16检测来自图案化晶片的该扫描产生的二次电子，从而获得电子束图像。 使用该电子束图像，通过算术运算单元32和缺陷判定单元33对图案化晶片进行比较检查。由于可以通过仅扫描电子束一次来获得高对比度的电子束图像，因此图案化晶片 使用SEM的检查方法可以在IC制造方法中实现。

公开(公告)号：US20060043982A1

公开(公告)日：2006-03-02

申请号：US11269617

申请日：2005-11-09

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US06929892B2

公开(公告)日：2005-08-16

申请号：US10894044

申请日：2004-07-20

申请人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

发明人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

IPC分类号： H01L21/66 ,  G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70641 ,  G03F7/705 ,  G03F7/70625 ,  Y10S430/143

摘要： In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.

摘要翻译： 在曝光处理的监视中，通过曝光剂量的波动，焦点位置的横截面形状大幅度变化的高度隔离图案是观察对象。 特别地，为了检测从锥形轮廓到逆锥形轮廓的截面抗蚀剂形状的变化，采用以下观察方法之一来获得观察数据：（1）通过使用抗蚀剂图案的倾斜图像成像 倾斜成像电子显微镜，（2）抗蚀剂图案的电子束图像在用于在电子束信号波形上产生不对称的成像条件下成像，并且（3）通过光学测量系统获得抗蚀剂图案的散射特性数据。 将观测数据应用于根据曝光条件预先创建的模型数据，以估计曝光剂量和焦点位置的波动。

公开(公告)号：US20050116182A1

公开(公告)日：2005-06-02

申请号：US10986910

申请日：2004-11-15

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01B15/00 ,  G01B11/14 ,  G01N23/225 ,  H01J37/28 ,  H01J37/304 ,  H01L21/66

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.

摘要翻译： 本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。 更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸 根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差， 从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。

公开(公告)号：US06898305B2

公开(公告)日：2005-05-24

申请号：US09791911

申请日：2001-02-22

申请人： Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Asahiro Kuni ,  Maki Tanaka ,  Hiroshi Miyai ,  Yasuhiko Nara ,  Mari Nozoe

发明人： Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Asahiro Kuni ,  Maki Tanaka ,  Hiroshi Miyai ,  Yasuhiko Nara ,  Mari Nozoe

IPC分类号： G01N23/225 ,  G01N21/956 ,  G06T1/00 ,  G06T7/00 ,  H01L21/66 ,  G06K9/00

CPC分类号： G06T7/001 ,  G01N21/95684 ,  G06T2207/10056 ,  G06T2207/30148

摘要： The present invention provides techniques, including a method and system, for inspecting for defects in a circuit pattern on a semi-conductor material. One specific embodiment provides a trial inspection threshold setup method, where the initial threshold is modified after a defect analysis of trial inspection stored data. The modified threshold is then used as the threshold in actual inspection.

公开(公告)号：US20050048780A1

公开(公告)日：2005-03-03

申请号：US10918381

申请日：2004-08-16

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N23/225 ,  G06T7/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/66

CPC分类号： G06T7/0004 ,  G01N23/225 ,  G01N2223/6116 ,  G06T2207/30148 ,  H01J2237/2814 ,  H01L22/12

摘要： A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a variation of the signal quantity. The size of the divided regions is used for quantitative evaluation of a three dimensional shape of the specimen. This system, especially by displaying measurement results of the pattern shape for each divided signal waveform (bottom width in the final shape, resist bottom width, etching shift quantity, and etching slope-angle component by the exposure), permits an easy check on which a component varies and how the component varies in all shape variations. With this arrangement, a pattern cross section information effective in determining etching process conditions can be acquired using images by an in-line SEM capable of nondestructive observation.

摘要翻译： 用于检查图案形状的系统用于通过照射聚焦电子束来检测来自样品的二次电子，并对该检测信号进行运算处理。 检测信号波形根据信号量的变化被分成多个区域。 分割区域的大小用于样本的三维形状的定量评估。 该系统特别是通过显示每个分割信号波形（最终形状的底部宽度，抗蚀剂底部宽度，蚀刻偏移量和通过曝光的蚀刻倾斜角度分量）的图案形状的测量结果，可以容易地检查哪个 一个组件变化，以及组件在所有形状变化中的变化。 通过这种布置，可以通过能够进行非破坏性观察的直列SEM的图像来获取有效确定蚀刻工艺条件的图案横截面信息。

公开(公告)号：US06559663B2

公开(公告)日：2003-05-06

申请号：US09983703

申请日：2001-10-25

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束的同时，在从照射电子束的时刻起经过规定时间后，照射电子束的部位检测到二次带电粒子，根据这样检测出形成图像 通过使用如此形成的图像来检查次级带电粒子信号和待检查的部分。