REGION CLASSIFICATION OF FILM NON-UNIFORMITY BASED ON PROCESSING OF SUBSTRATE IMAGES

    公开(公告)号:US20220284562A1

    公开(公告)日:2022-09-08

    申请号:US17680167

    申请日:2022-02-24

    Abstract: A method of classification of a film non-uniformity on a substrate includes obtaining a color image of a substrate with the color image comprising a plurality of color channels, obtaining a standard color for the color image of the substrate, for each respective pixel along a path in the color image determining a difference vector between the a color of the respective pixel and the standard color to generate a sequence of difference vectors, sorting the pixels along the path into a plurality of regions including at least one normal region and at least one abnormal region based on the sequence of difference vectors, and classifying the at least one abnormal region as overpolished or underpolished based on at least one difference vector of a pixel at a boundary between the abnormal region and an adjacent normal region.

    PASSIVE ACOUSTIC MONITORING AND ACOUSTIC SENSORS FOR CHEMICAL MECHANICAL POLISHING

    公开(公告)号:US20220281057A1

    公开(公告)日:2022-09-08

    申请号:US17674768

    申请日:2022-02-17

    Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system, and a controller. The controller is configured to detect exposure of an underlying layer due to the polishing of the substrate based on measurements from the in-situ acoustic monitoring system. The in-situ acoustic monitoring system may detect exposure of an underlying layer based on comparison of the signal to prior measurements of acoustic signals generated by stress energy of test substrates.

    Multi-Platen Multi-Head Polishing Architecture
    56.
    发明申请
    Multi-Platen Multi-Head Polishing Architecture 审中-公开
    多平台多头抛光架构

    公开(公告)号:US20160101497A1

    公开(公告)日:2016-04-14

    申请号:US14973044

    申请日:2015-12-17

    Abstract: A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.

    Abstract translation: 抛光装置包括支撑在平台上的多个工位,所述多个工位包括至少两个抛光站和转移站,每个抛光站包括用于支撑抛光垫的压板,多个托架头悬挂并可沿其移动 轨道,使得每个抛光站可选择性地定位在车站处;以及控制器,被配置为控制承载头沿着轨道的运动,使得在每个抛光站的抛光期间,只有单个承载头位于抛光台中。

    ENDPOINTING DETECTION FOR CHEMICAL MECHANICAL POLISHING BASED ON SPECTROMETRY
    57.
    发明申请
    ENDPOINTING DETECTION FOR CHEMICAL MECHANICAL POLISHING BASED ON SPECTROMETRY 有权
    基于光谱分析的化学机械抛光检测

    公开(公告)号:US20150364390A1

    公开(公告)日:2015-12-17

    申请号:US14832997

    申请日:2015-08-21

    Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.

    Abstract translation: 用于基于频谱的终点的方法和装置。 终点方法包括选择参考频谱。 参考光谱是在第一衬底上从感兴趣的膜反射的白光的光谱,并且具有大于目标厚度的厚度。 对于特定的基于频谱的端点确定逻辑,经验地选择参考频谱,使得当通过应用特定的基于频谱的端点逻辑来调用端点时实现目标厚度。 该方法包括获得当前频谱。 目前的光谱是当感兴趣的薄膜经受抛光步骤并且具有大于目标厚度的电流厚度时,在第二基板上从感兴趣的薄膜反射的白光的光谱。 该方法包括为第二基底确定何时已经实现了抛光步骤的终点。 该确定基于参考和当前光谱。

    Adjustment of Polishing Rates During Substrate Polishing With Predictive Filters
    58.
    发明申请
    Adjustment of Polishing Rates During Substrate Polishing With Predictive Filters 有权
    使用预测滤波器调整衬底抛光期间的抛光速率

    公开(公告)号:US20150147940A1

    公开(公告)日:2015-05-28

    申请号:US14092460

    申请日:2013-11-27

    CPC classification number: B24B49/12 B24B49/04 G01B11/06 G01B11/0625

    Abstract: A measured characterizing value dependent on a thickness of a region of a substrate is input into a first predictive filter. The first predictive filter generates a filtered characterizing value. A measured characterizing rate at which the measured characterizing value changes is input into a second predictive filter. The second predictive filter generates a filtered characterizing rate of the region of the substrate. The measured characterizing value and the measured characterizing rate are determined based on in-situ measurements made at or before a first time during a polishing process of the substrate. A desired characterizing rate is determined to be used for polishing the region of the substrate after the first time and before a second, later time based on the filtered characterizing value and the filtered characterizing rate.

    Abstract translation: 将取决于衬底的区域的厚度的测量的特征值输入到第一预测滤波器中。 第一个预测滤波器生成滤波后的特征值。 将测量的特征值改变的测量特征率输入到第二预测滤波器。 第二预测滤波器产生衬底区域的滤波表征速率。 基于在衬底的抛光过程中在第一次或之前进行的在位测量来确定所测量的特征值和测量的表征速率。 确定期望的表征速率用于在第一次之后以及在基于滤波的特征值和滤波的表征速率的第二较晚时间之前抛光衬底的区域。

    Limiting Adjustment of Polishing Rates During Substrate Polishing
    59.
    发明申请
    Limiting Adjustment of Polishing Rates During Substrate Polishing 有权
    衬底抛光时抛光速度的限制调整

    公开(公告)号:US20150147829A1

    公开(公告)日:2015-05-28

    申请号:US14092429

    申请日:2013-11-27

    CPC classification number: H01L22/26 B24B37/005 B24B49/04 H01L22/12

    Abstract: A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between the adjustment times and the projected time is before the polishing endpoint time. The second polishing rate is the first polishing rate as adjusted by the polishing rate adjustment.

    Abstract translation: 控制抛光的方法包括:以第一研磨速率抛光基板的区域,用原位监测系统测量抛光时的基板区域的序列特征值,确定多个 在抛光终点时间之前的调整时间,以及调整抛光参数以在第二抛光速率下抛光该衬底。 时间段大于调整时间与预计时间之间的时间在抛光终点时间之前的时间段。 第二抛光速率是通过抛光速率调整调整的第一抛光速率。

    Weighted regression of thickness maps from spectral data
    60.
    发明授权
    Weighted regression of thickness maps from spectral data 有权
    从光谱数据加权回归厚度图

    公开(公告)号:US08992286B2

    公开(公告)日:2015-03-31

    申请号:US13777672

    申请日:2013-02-26

    CPC classification number: B24B49/12 B24B37/013

    Abstract: A method of controlling a polishing operation includes measuring a plurality of spectra at a plurality of different positions on a substrate to provide a plurality of measured spectra. For each measured spectrum of the plurality of measured spectra, a characterizing value is generated based on the measured spectrum. For each characterizing value, a goodness of fit of the measured spectrum to another spectrum used in generating the characterizing value is determined. A wafer-level characterizing value map is generated by applying a regression to the plurality of characterizing values with the plurality of goodnesses of fit used as weighting factors in the regression. A polishing endpoint or a polishing parameter of the polishing apparatus is adjusted based on the wafer-level characterizing map, and the substrate or a subsequent substrate is polished in the polishing apparatus with the adjusted polishing endpoint or polishing parameter.

    Abstract translation: 控制抛光操作的方法包括测量衬底上多个不同位置处的多个光谱以提供多个测量光谱。 对于多个测量光谱的每个测量光谱,基于测量的光谱产生表征值。 对于每个特征值,确定测量的光谱与生成表征值所使用的另一光谱的拟合度。 通过将回归应用于具有多个适合度的拟合优点用作回归中的加权因子来生成晶片级特征值映射。 基于晶片级特征图调整抛光装置的抛光终点或抛光参数,并且在抛光装置中用调整的抛光终点或抛光参数对衬底或随后的衬底进行抛光。

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