公开(公告)号：US11043437B2

公开(公告)日：2021-06-22

申请号：US16241427

申请日：2019-01-07

Applicant: Applied Materials, Inc.

Inventor： Michael Yu-tak Young ,  Ludovic Godet ,  Robert Jan Visser

IPC: H01L23/544 ,  H01L23/15 ,  G03F9/00 ,  H01L21/67 ,  H01L27/12 ,  H01L21/68

Abstract: Embodiments of the present disclosure generally relate to an optically transparent substrate, comprising a major surface having a peripheral edge region with an orientation feature formed therein, and a texture formed on the peripheral edge region, the texture having an opacity that is greater than an opacity of the major surface.

公开(公告)号：US10955606B2

公开(公告)日：2021-03-23

申请号：US16191340

申请日：2018-11-14

Applicant: Applied Materials, Inc.

Inventor： Michael Yu-tak Young ,  Ludovic Godet ,  Robert Jan Visser ,  Wayne McMillan

IPC: B29D11/00 ,  F21V8/00

Abstract: Embodiments described herein relate to methods of fabricating waveguide structures with gratings having front angles less than about 45° and back angles less than about 45°. The methods include imprinting stamps into nanoimprint resists disposed on substrates. The nanoimprint resists are subjected to a cure process. The stamps are released from the nanoimprint resist at a release angle ϑ using a release method. The nanoimprint resists are subjected to an anneal process to form a waveguide structure comprising a plurality of gratings with a front angle α and a back angle β relative to a second plane of the surface of the substrate less than about 45°.

公开(公告)号：US20210028055A1

公开(公告)日：2021-01-28

申请号：US17069195

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20200284953A1

公开(公告)日：2020-09-10

申请号：US16884117

申请日：2020-05-27

Applicant: Applied Materials, Inc.

Inventor： Jinxin Fu ,  Ludovic Godet ,  Wayne McMillan

IPC: G02B5/18 ,  G03F7/00 ,  B29D11/00

Abstract: Embodiments of the present disclosure generally relate to a method for forming an optical component, for example, for a virtual reality or augmented reality display device. In one embodiment, the method includes forming a first layer on a substrate, and the first layer has a first refractive index. The method further includes pressing a stamp having a pattern onto the first layer, and the pattern of the stamp is transferred to the first layer to form a patterned first layer. The method further includes forming a second layer on the patterned first layer by spin coating, and the second layer has a second refractive index greater than the first refractive index. The second layer having the high refractive index is formed by spin coating, leading to improved nanoparticle uniformity in the second layer.

公开(公告)号：US10770292B2

公开(公告)日：2020-09-08

申请号：US16008495

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US10401742B2

公开(公告)日：2019-09-03

申请号：US15947409

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Ludovic Godet ,  Kyle M. Hanson ,  Robert B. Moore

IPC: G03F7/20 ,  G03F7/38 ,  H01L21/67

Abstract: Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.

公开(公告)号：US10358715B2

公开(公告)日：2019-07-23

申请号：US15173356

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet ,  Qiwei Liang ,  Adib Khan

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  H01L21/8234 ,  H01L21/687 ,  C23C16/02 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US09964863B1

公开(公告)日：2018-05-08

申请号：US15435007

申请日：2017-02-16

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Ludovic Godet ,  Kyle M. Hanson ,  Robert B. Moore

IPC: G03F7/20

CPC classification number: G03F7/70716 ,  G03F7/70725 ,  H01L21/0273

Abstract: Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.

公开(公告)号：US09798240B2

公开(公告)日：2017-10-24

申请号：US14472306

申请日：2014-08-28

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet ,  Christopher Bencher

IPC: G03F7/20 ,  G03F7/38 ,  G03F7/004 ,  G03F7/26

CPC classification number: G03F7/38 ,  G03F7/0045 ,  G03F7/26

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

公开(公告)号：US09777378B2

公开(公告)日：2017-10-03

申请号：US14635589

申请日：2015-03-02

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Erica Chen ,  Ludovic Godet ,  Jun Xue ,  Ellie Y. Yieh

IPC: C23C16/56 ,  C23C16/32 ,  C23C14/48 ,  C23C16/40 ,  C23C16/04

CPC classification number: C23C16/56 ,  C23C16/045 ,  C23C16/401

Abstract: Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.