公开(公告)号：US06480641B1

公开(公告)日：2002-11-12

申请号：US09434866

申请日：1999-11-04

申请人： Yi Ding ,  Mario J. Paniccia ,  Timothy J. Maloney

发明人： Yi Ding ,  Mario J. Paniccia ,  Timothy J. Maloney

IPC分类号： G02B612

CPC分类号： G02F1/218 ,  G02B2006/12107 ,  G02B2006/12142 ,  G02F2001/0152 ,  G02F2201/307

摘要： An optical modulator that modulates light through the back side of a flip chip packaged integrated circuit die. In one embodiment, an optical modulator includes a p-n junction having a side wall that is substantially vertical or perpendicular relative to a surface of the integrated circuit die. A charged region is generated at the p-n junction and is modulated in response to an electrical signal of the integrated circuit die. An optical beam is directed through the back side, of the semiconductor substrate and through the charged region along the side wall p-n junction. The optical beam is deflected off a deflector back through the charged region along the side wall back out the back side. In one embodiment, the side wall p-n junction is provided with a metal oxide semiconductor (MOS) gate structure. In another embodiment, the side wall p-n junction is provided by an n− (or p−) well in a p− (or n−) epitaxy layer of the semiconductor substrate. In one embodiment, the well is a well ring structure. In another embodiment, there are a plurality of wells periodically located in the epitaxy layer of the semiconductor substrate. In one embodiment, the well or plurality of wells are surrounded with an optical beam confinement structure.

摘要翻译： 一种光调制器，其通过倒装芯片封装的集成电路管芯的背面调制光。 在一个实施例中，光调制器包括具有相对于集成电路管芯的表面基本垂直或垂直的侧壁的p-n结。 在p-n结处产生带电区域，并且响应于集成电路管芯的电信号进行调制。 光束被引导通过半导体衬底的背面，并沿着侧壁p-n结通过带电区域。 光束从背面向后偏转穿过穿过带电区域的偏转器。 在一个实施例中，侧壁p-n结设置有金属氧化物半导体（MOS）栅极结构。 在另一个实施例中，侧壁p-n结由半导体衬底的p-（或n-）外延层中的n-（或p-）阱提供。 在一个实施例中，井是井环结构。 在另一个实施例中，存在周期性地位于半导体衬底的外延层中的多个阱。 在一个实施例中，阱或多个阱被光束约束结构包围。

公开(公告)号：US06421473B1

公开(公告)日：2002-07-16

申请号：US09676297

申请日：2000-09-28

申请人： Mario J. Paniccia ,  Yi Ding ,  Dmitri E. Nikonov

发明人： Mario J. Paniccia ,  Yi Ding ,  Dmitri E. Nikonov

IPC分类号： G02B612

CPC分类号： G02F1/025 ,  G02B2006/12145 ,  G02F1/313

摘要： A device for confining an optical beam in an optical switch. In one embodiment, the disclosed optical switch includes an optical switching device disposed between an optical input port and an optical output port in a semiconductor substrate layer of an integrated circuit die. The semiconductor substrate layer is disposed between a plurality of optical confinement layers such that an optical beam is confined to remain within the semiconductor substrate layer until exiting through the optical output port. In one embodiment, a plurality of semiconductor substrate layers are included in the optical switch. Each of the semiconductor substrate layers is disposed between optical confinement layers such that optical beams passing through the semiconductor substrate layers are confined to remain within the semiconductor substrate layers until exiting through respective optical output ports. In one embodiment, at least one optical switching device is disposed in each of the plurality of semiconductor substrate layers. In one embodiment, integrated circuitry such as driver circuitry, controller circuitry, logic circuitry, coder-decoder circuitry, microprocessor circuitry or the like is included in at least one of the semiconductor substrate layers.

摘要翻译： 用于将光束限制在光开关中的装置。 在一个实施例中，所公开的光开关包括设置在集成电路管芯的半导体衬底层中的光输入端口和光输出端口之间的光开关器件。 半导体衬底层设置在多个光学限制层之间，使得光束被限制为保持在半导体衬底层内，直到通过光学输出端口离开。 在一个实施例中，光开关中包括多个半导体衬底层。 每个半导体衬底层设置在光学限制层之间，使得通过半导体衬底层的光束被限制为保留在半导体衬底层内，直到通过相应的光学输出端口离开。 在一个实施例中，至少一个光学开关器件设置在多个半导体衬底层的每一个中。 在一个实施例中，诸如驱动器电路，控制器电路，逻辑电路，编码器 - 解码器电路，微处理器电路等的集成电路被包括在至少一个半导体衬底层中。

公开(公告)号：US06374020B1

公开(公告)日：2002-04-16

申请号：US09438345

申请日：1999-11-11

申请人： Mario J. Paniccia

发明人： Mario J. Paniccia

IPC分类号： G02B642

CPC分类号： G02B6/43 ,  G02B6/2817

摘要： A device for optically interconnecting a plurality of devices. In one embodiment, the disclosed optical interconnection device includes a plurality of optical ports. One embodiment of the presently described optical interconnection device includes optics elements to optically couple each one of the optical ports to one another. In one embodiment, these optical elements include one or more beam splitters and deflectors. Each of the optical ports of the presently described optical interconnection device is configured to be optically coupled to another device, such as for example an integrated circuit chip, computer system or the like, through an optical link. In one embodiment, the optical ports accommodate a plurality of N optical beams providing an N-bit wide multi-load optical bus.

摘要翻译： 一种用于光学地互连多个设备的设备。 在一个实施例中，所公开的光学互连装置包括多个光学端口。 目前描述的光学互连装置的一个实施例包括将光学端口中的每一个光学耦合到彼此的光学元件。 在一个实施例中，这些光学元件包括一个或多个分束器和偏转器。 目前描述的光学互连装置的每个光学端口被配置为通过光学链路光耦合到另一个装置，例如集成电路芯片，计算机系统等。 在一个实施例中，光端口容纳提供N位宽多负载光总线的多个N个光束。

公开(公告)号：US06215577B1

公开(公告)日：2001-04-10

申请号：US09435058

申请日：1999-10-25

申请人： Sean M. Koehl ,  Mario J. Paniccia ,  Dmitri Nikonov

发明人： Sean M. Koehl ,  Mario J. Paniccia ,  Dmitri Nikonov

IPC分类号： G02F103

CPC分类号： G02F1/015

摘要： An optical modulator that modulates light through the semiconductor substrate through the back side of an integrated circuit die. In one embodiment, an optical modulator is disposed within a flip chip packaged integrated circuit die. The optical modulator includes a modulation region through which an optical beam is passed a plurality of times. In one embodiment, the optical beam enters through the back side of the semiconductor substrate at a first location and the modulated optical beam is deflected out through a second location on the back side of the semiconductor substrate. The interaction length of the optical modulator is increased by internally deflecting and passing the optical beam through the modulation region a plurality of times. In one embodiment, total internal reflection is used to deflect the optical beam. In another embodiment, reflective materials are used to internally deflect the optical beam. In one embodiment, the modulation region is provided with a charged region formed with a p-n junction. In another embodiment, the charged region is provided using metal-oxide-semiconductor type structures.

摘要翻译： 一种光调制器，其通过集成电路管芯的背面调制通过半导体衬底的光。 在一个实施例中，光学调制器设置在倒装芯片封装集成电路管芯内。 光调制器包括多个光束通过的调制区域。 在一个实施例中，光束在第一位置处通过半导体衬底的背面进入，并且调制的光束通过半导体衬底的背侧上的第二位置偏转出去。 光调制器的相互作用长度通过内部偏转并使光束通过调制区域多次而增加。 在一个实施例中，使用全内反射来偏转光束。 在另一个实施例中，使用反射材料来内部偏转光束。 在一个实施例中，调制区域设置有形成有p-n结的带电区域。 在另一个实施例中，使用金属氧化物半导体型结构提供带电区域。

公开(公告)号：US6072179A

公开(公告)日：2000-06-06

申请号：US130741

申请日：1998-08-07

申请人： Mario J. Paniccia ,  Valluri R. M. Rao ,  Wai Mun Yee

发明人： Mario J. Paniccia ,  Valluri R. M. Rao ,  Wai Mun Yee

IPC分类号： G01R1/06 ,  G01N21/41 ,  G01R19/00 ,  G01R31/302 ,  G01R31/311 ,  G01R31/28

CPC分类号： G01R31/311

摘要： A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 .mu.m. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.

摘要翻译： 一种用于检测设置在半导体中的集成电路的有源区域中的电场的方法和装置。 在一个实施例中，激光束以大于约0.9μm的波长工作。 激光束通过半导体衬底的背面聚焦到P-N结，例如MOS晶体管的漏极。 作为自由载体吸收的结果，激光束在P-N结附近被部分吸收。 当在P-N结上施加信号时，将根据P-N结附近的耗尽区的调制来调制自由载流子吸收的程度。 激光束穿过P-N结区域，从结点后面的氧化物界面和金属反射出来，并通过P-N结返回并返回硅表面。 用光学检测系统检测该反射激光束中的幅度调制。

公开(公告)号：US6049639A

公开(公告)日：2000-04-11

申请号：US995277

申请日：1997-12-19

申请人： Mario J. Paniccia ,  Valluri R. M. Rao

发明人： Mario J. Paniccia ,  Valluri R. M. Rao

IPC分类号： G02B6/43 ,  G02B6/12

CPC分类号： G02B6/43 ,  H01L25/105 ,  H01L2924/0002

摘要： A method and an apparatus providing optical input/output in an integrated circuit. In one embodiment, optical modulators and demodulators, which are coupled to integrated circuit input/output nodes, are disposed on or within the back side semiconductor substrate of a flip chip packaged integrated circuit. Since a flip chip packaged integrated circuit die is utilized, full access to the optical modulators and demodulators is provided from the back side of the integrated circuit die for optical input/output. In one embodiment, a heat sink including a light source and an optical assembly is thermally and optically coupled to the back side of the integrated circuit die. A light beam is directed to the optical modulators and the deflected modulated light beam is routed and directed to the optical demodulators to realize optical input/output. In one embodiment, infrared light may be utilized such that the optical modulators and demodulators are disposed within a silicon semiconductor substrate. Since silicon is partially transparent to infrared light, optical input/output is realized through the back side and through the semiconductor substrate of the flip chip packaged integrated circuit die.

摘要翻译： 一种在集成电路中提供光输入/输出的方法和装置。 在一个实施例中，耦合到集成电路输入/输出节点的光调制器和解调器设置在倒装芯片封装集成电路的背面半导体衬底上或其内部。 由于利用了倒装芯片封装的集成电路管芯，所以从用于光输入/输出的集成电路管芯的背面提供对光调制器和解调器的完全访问。 在一个实施例中，包括光源和光学组件的散热器被热和光耦合到集成电路管芯的背面。 光束被引导到光调制器，并且偏转的调制光束被路由并被引导到光解调器以实现光输入/输出。 在一个实施例中，可以利用红外光，使得光学调制器和解调器设置在硅半导体衬底内。 由于硅对红外光部分透明，所以通过背面和通过倒装芯片封装的集成电路裸片的半导体衬底实现光输入/输出。

公开(公告)号：US5895972A

公开(公告)日：1999-04-20

申请号：US778016

申请日：1996-12-31

申请人： Mario J. Paniccia

发明人： Mario J. Paniccia

IPC分类号： G01R31/28 ,  G01R31/311 ,  H01L23/373 ,  H01L23/10 ,  H01L23/06 ,  H01L23/34

CPC分类号： H01L23/373 ,  G01R31/311 ,  H01L23/3732 ,  H01L23/3738 ,  G01R31/2891 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30107

摘要： An apparatus and method that permits the removal of heat from the back side surface of an integrated circuit semiconductor substrate while performing optical based testing through or at the back side surface of the semiconductor substrate.In one embodiment, the present invention includes a semiconductor device having an infrared transparent heat slug attached to the back side surface of the device. Heat is removed from the semiconductor device through an infrared transparent heat slug that is then thermally cooled by a conventional cooling technique.

摘要翻译： 一种允许从集成电路半导体衬底的背侧表面去除热的装置和方法，同时通过半导体衬底的背面进行光学测试。 在一个实施例中，本发明包括一个半导体器件，其具有连接到器件的背面的红外透明散热片。 热量通过红外线透明散热片从半导体器件中去除，然后通过传统的冷却技术进行热冷却。

公开(公告)号：US5872360A

公开(公告)日：1999-02-16

申请号：US766149

申请日：1996-12-12

申请人： Mario J. Paniccia ,  Valluri R. Rao

发明人： Mario J. Paniccia ,  Valluri R. Rao

IPC分类号： G01R31/309 ,  G01R31/28

CPC分类号： G01R31/309

摘要： A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength near the band gap of a semiconductor such as silicon. The laser beam is focused onto a P-N junction, such as for example the drain of an MOS transistor, through the back side of the semiconductor substrate. As a result of photo-absorption, the laser beam is partially absorbed in the P-N junction. When an external electric field is impressed on the P-N junction, such as when for example the drain of the transistor switches, the degree of photo-absorption will be modulated in accordance with the modulation in the electric field due to the phenomenon of electro-absorption. Electro-absorption also leads to electro-refraction which leads to a modulation in the reflection coefficient for the light reflected from the P-N junction/oxide interface. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Any amplitude modulation in this reflected laser beam is detected with an optical detection system, and is attributed to a corresponding modulation in the electric field in the P-N junction due to the combined effects of electro-absorption and electro-refraction.

摘要翻译： 一种用于检测设置在半导体中的集成电路的有源区域中的电场的方法和装置。 在一个实施例中，激光束以接近诸如硅之类的半导体的带隙的波长工作。 激光束通过半导体衬底的背面聚焦到P-N结，例如MOS晶体管的漏极。 作为光吸收的结果，激光束被部分地吸收在P-N结中。 当在PN结上施加外部电场时，例如当例如晶体管开关的漏极时，由于电吸收的现象，将根据电场中的调制来调制光吸收的程度 。 电吸收也导致电折射，这导致从P-N结/氧化物界面反射的光的反射系数的调制。 激光束穿过P-N结区域，从结点后面的氧化物界面和金属反射出来，并通过P-N结返回并返回硅表面。 这种反射激光束中的任何幅度调制都用光学检测系统检测，并且归因于由于电吸收和电折射的组合效应而在P-N结中的电场中的相应调制。

公开(公告)号：US20140367740A1

公开(公告)日：2014-12-18

申请号：US14472241

申请日：2014-08-28

申请人： Micheal T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Micheal T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107 ,  H01L27/146

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US20130195137A1

公开(公告)日：2013-08-01

申请号：US13838932

申请日：2013-03-15

申请人： John E. Bowers ,  Oded Cohen ,  Alexander W. Fang ,  Richard Jones ,  Mario J. Paniccia ,  Hyundai Park

发明人： John E. Bowers ,  Oded Cohen ,  Alexander W. Fang ,  Richard Jones ,  Mario J. Paniccia ,  Hyundai Park

IPC分类号： H01S5/30 ,  H01S5/34

CPC分类号： H01S5/30 ,  G02B2006/12121 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/141 ,  H01S5/2214 ,  H01S5/223 ,  H01S5/34

摘要： Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.

摘要翻译： 一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到 注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。 公开和要求保护其他实施例。