公开(公告)号：US20110207310A1

公开(公告)日：2011-08-25

申请号：US13103784

申请日：2011-05-09

申请人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Stephan Voss ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/265

CPC分类号： H01L29/7395 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36

摘要： Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.

摘要翻译： 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。

公开(公告)号：US07749876B2

公开(公告)日：2010-07-06

申请号：US12039173

申请日：2008-02-28

申请人： Reiner Barthelmess ,  Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Reiner Barthelmess ,  Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L21/266

CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/861

摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.

摘要翻译： 根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 将半导体体暴露于含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。

公开(公告)号：US07667297B2

公开(公告)日：2010-02-23

申请号：US11423026

申请日：2006-06-08

申请人： Reiner Barthelmess ,  Anton Mauder ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Reiner Barthelmess ,  Anton Mauder ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L29/167 ,  H01L29/30

CPC分类号： H01L29/0834 ,  H01L21/263 ,  H01L21/324 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/861

摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂， 半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的 温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。

公开(公告)号：US20090212322A1

公开(公告)日：2009-08-27

申请号：US12437375

申请日：2009-05-07

申请人： Franz Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Franz Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L29/739

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/7395 ,  H01L29/861

摘要： A vertical semiconductor device includes a semiconductor body, and first and second contacts on opposite sides of the semiconductor body. A plurality of regions are formed in the semiconductor body including, in a direction from the first contact to the second contact, a first region of a first conductivity type, a second region of a second conductivity type; and a third region of the first conductivity type. The third region is electrically connected to the second contact. A semiconductor zone of the second conductivity type and increased doping density is arranged in the second region. The semiconductor zone separates a first part of the second region from a second part of the second region. The semiconductor zone has a maximum doping density exceeding about 1016 cm−3 and a thickness along the direction from the first contact to the second contact of less than about 3 μm.

摘要翻译： 垂直半导体器件包括半导体本体，以及在半导体本体的相对侧上的第一和第二触点。 多个区域形成在半导体本体中，包括从第一接触到第二接触的方向，具有第一导电类型的第一区域和第二导电类型的第二区域; 和第一导电类型的第三区域。 第三区域电连接到第二触点。 第二导电类型的半导体区域和掺杂浓度的增加被布置在第二区域中。 半导体区域将第二区域的第一部分与第二区域的第二部分分开。 半导体区具有超过约1016cm-3的最大掺杂密度和沿着从第一接触到第二接触的方向的厚度小于约3μm。

公开(公告)号：US07557386B2

公开(公告)日：2009-07-07

申请号：US11393542

申请日：2006-03-30

申请人： Holger Ruething ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Frank Hille

发明人： Holger Ruething ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Frank Hille

IPC分类号： H01L29/00 ,  H01L31/00

CPC分类号： H01L29/7397 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/32

摘要： A reverse conducting insulated gate bipolar transistor (IGBT) includes a semiconductor substrate having a front side and a back side and a first conductivity region between the front and back sides. The first conductivity region includes a reduced lifetime zone, a first lifetime zone between the reduced lifetime zone and the front side, and an intermediate lifetime zone between the reduced lifetime zone and the back side. Charge carriers in the first lifetime zone have a first carrier lifetime, charge carriers in the reduced lifetime zone have a reduced carrier lifetime shorter than the first carrier lifetime, and charge carriers in the intermediate lifetime zone have an intermediate carrier lifetime shorter than the first carrier lifetime and longer than the reduced carrier lifetime.

摘要翻译： 反向导通绝缘栅双极晶体管（IGBT）包括具有前侧和后侧以及前侧和后侧之间的第一导电区的半导体衬底。 第一导电区域包括减小的寿命区域，减小的寿命区域和前侧之间的第一寿命区域以及减小的寿命区域和背面之间的中间寿命区域。 第一寿命区域中的电荷载体具有第一载流子寿命，减小寿命区中的电荷载流子具有比第一载流子寿命更短的载流子寿命，并且中间寿命区中的电荷载流子具有比第一载流子更短的中间载流子寿命 寿命长于载流子寿命缩短。

公开(公告)号：US20090140290A1

公开(公告)日：2009-06-04

申请号：US12324309

申请日：2008-11-26

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

IPC分类号： H01L29/74 ,  H01L21/332

CPC分类号： H01L27/0255 ,  H01L21/324 ,  H01L27/1027 ,  H01L29/0692 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1012 ,  H01L29/1016 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66363 ,  H01L29/7395 ,  H01L29/7428 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.

摘要翻译： 包括短路结构的半导体部件。 一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。 半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。 第一区域和第二区域耦合到高度导电的层。 第二导电类型的连接区域布置在第二区域和导电层之间。

公开(公告)号：US07538412B2

公开(公告)日：2009-05-26

申请号：US11480150

申请日：2006-06-30

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Helmut Strack ,  Carsten Schaeffer ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Helmut Strack ,  Carsten Schaeffer ,  Frank Pfirsch

IPC分类号： H01L27/082

CPC分类号： H01L29/861 ,  H01L29/7396

摘要： A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.

摘要翻译： 一种半导体器件包括半导体材料，该半导体材料包括一个基极区域和一个具有邻近基极区域的第一侧面和与第一侧相对的第二侧面的场阻挡区域。 场停止区包括第一掺杂剂注入和第二掺杂剂注入。 第一掺杂剂注入具有最大的第一掺杂剂浓度，并且第二掺杂剂注入具有最大的第二掺杂剂浓度，其中第一掺杂剂浓度最大值小于第二掺杂剂浓度最大值，并且位于比第二掺杂剂浓度最大值更靠近第二侧 。

公开(公告)号：US20080173968A1

公开(公告)日：2008-07-24

申请号：US11969017

申请日：2008-01-03

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Reiner Barthelmess

IPC分类号： H01L29/861 ,  H01L21/225

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/3242 ,  H01L29/0661 ,  H01L29/36

摘要： A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

摘要翻译： 公开了二极管。 一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。 半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。 在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。

公开(公告)号：US20080122001A1

公开(公告)日：2008-05-29

申请号：US11944903

申请日：2007-11-26

申请人： Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

发明人： Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/94 ,  H01L21/22

CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L21/266 ,  H01L21/322 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712

摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.

摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。

公开(公告)号：US20070231973A1

公开(公告)日：2007-10-04

申请号：US11393542

申请日：2006-03-30

申请人： Holger Ruething ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Frank Hille

发明人： Holger Ruething ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Frank Hille

IPC分类号： H01L21/332

CPC分类号： H01L29/7397 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/32

摘要： A reverse conducting insulated gate bipolar transistor (IGBT) includes a semiconductor substrate having a front side and a back side and a first conductivity region between the front and back sides. The first conductivity region includes a reduced lifetime zone, a first lifetime zone between the reduced lifetime zone and the front side, and an intermediate lifetime zone between the reduced lifetime zone and the back side. Charge carriers in the first lifetime zone have a first carrier lifetime, charge carriers in the reduced lifetime zone have a reduced carrier lifetime shorter than the first carrier lifetime, and charge carriers in the intermediate lifetime zone have an intermediate carrier lifetime shorter than the first carrier lifetime and longer than the reduced carrier lifetime.

摘要翻译： 反向导通绝缘栅双极晶体管（IGBT）包括具有前侧和后侧以及前侧和后侧之间的第一导电区的半导体衬底。 第一导电区域包括减小的寿命区域，减小的寿命区域和前侧之间的第一寿命区域以及减小的寿命区域和背面之间的中间寿命区域。 第一寿命区域中的电荷载体具有第一载流子寿命，减小寿命区中的电荷载流子具有比第一载流子寿命更短的载流子寿命，并且中间寿命区中的电荷载流子具有比第一载流子更短的中间载流子寿命 寿命长于载流子寿命缩短。