公开(公告)号：US20080271667A1

公开(公告)日：2008-11-06

申请号：US12216237

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B23/00

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

公开(公告)号：US07416604B2

公开(公告)日：2008-08-26

申请号：US11473122

申请日：2006-06-23

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B25/12

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

公开(公告)号：US20080022921A1

公开(公告)日：2008-01-31

申请号：US11628253

申请日：2005-04-15

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： C30B29/38 ,  C30B11/06 ,  C30B9/10 ,  H01L33/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：US20070062440A1

公开(公告)日：2007-03-22

申请号：US11602948

申请日：2006-11-22

申请人： Fumitaka Sato ,  Seiji Nakahata

发明人： Fumitaka Sato ,  Seiji Nakahata

IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B25/04 ,  C30B25/18 ,  C30B29/40 ,  C30B29/406

摘要： A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm2 to 10/cm2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).

摘要翻译： 一种低失真氮化镓晶体基板，包括具有确定的c轴和一定a轴的低位错单晶区域（Z），C平面生长区域（Y）具有平行于 低位错单晶区域（Z）的c轴和a轴，具有与低位错单晶区域（Z）的c轴相反的c轴的大量缺陷积聚区域（H） 与低位错单晶区域（Z）的a轴平行的轴线和0.1 / cm 2至10 / cm 2的c轴总芯部区域（F ）含有至少一个具有与低位错单晶区域（Z）的c轴平行的c轴和不同于低位错单晶区域（Z）的a轴的a轴的晶体。

公开(公告)号：US6001759A

公开(公告)日：1999-12-14

申请号：US144116

申请日：1998-08-31

申请人： Michimasa Miyanaga ,  Seiji Nakahata ,  Akira Yamakawa

发明人： Michimasa Miyanaga ,  Seiji Nakahata ,  Akira Yamakawa

IPC分类号： C04B35/591 ,  C04B35/597 ,  C04B35/599

CPC分类号： C04B35/591 ,  C04B35/597

摘要： A silicon nitride sintered body prepared through a nitriding reaction of Si, consists of crystal grains mainly composed of silicon nitride and/or SIALON and a grain boundary phase. The grain boundary phase includes a first component including at least one element selected from a group of Na, K, Mg, Ca and Sr and a second component including at least one element selected from a group of Y and lanthanoid series elements. The molar ratio of the first component to the second component is in the range of 1:1 to 6:1 in terms of oxides. The mean breadth and the mean length of the crystal grains are not more than 0.1 .mu.m and not more than 3 .mu.m respectively, and the standard deviation of the mean length in the sintered body is within 1.5 .mu.m. Especially, the mean breadth of the crystal grains is at least 0.4 .mu.m and not more than 0.9 .mu.m.

摘要翻译： 通过Si的氮化反应制备的氮化硅烧结体由主要由氮化硅和/或SIALON组成的晶粒和晶界相组成。 晶界相包括包含选自Na，K，Mg，Ca和Sr中的至少一种元素的第一成分和包含选自Y和镧系元素的至少一种元素的第二成分。 第一组分与第二组分的摩尔比以氧化物换算为1：1至6：1。 晶粒的平均宽度和平均长度分别不大于0.1μm，不大于3μm，烧结体平均长度的标准偏差在1.5μm以内。 特别是，晶粒的平均宽度至少为0.4μm，不大于0.9μm。

公开(公告)号：US5449648A

公开(公告)日：1995-09-12

申请号：US236707

申请日：1994-05-02

申请人： Seiji Nakahata ,  Takahiro Matsuura ,  Kouichi Sogabe ,  Akira Yamakawa

发明人： Seiji Nakahata ,  Takahiro Matsuura ,  Kouichi Sogabe ,  Akira Yamakawa

IPC分类号： C04B35/581 ,  C04B35/626 ,  H01L21/48 ,  H01L23/15 ,  H05K1/03 ,  C04B35/58

CPC分类号： C04B35/581 ,  H01L21/4807

摘要： An aluminum nitride sintered body has a high breakdown voltage for serving as a substrate material particularly suited to highly integrated circuits. The aluminum nitride sintered body contains titanium, which is included as a solid solute in the aluminum nitride crystal lattice in a weight ratio of at least 50 ppm and not more than 1000 ppm. The unpaired electron concentration in the sintered body as determined from an absorption spectrum of electron spin resonance is at least 1.times.10.sup.13 /g. At least 0.1 percent by weight and not more than 5.0 percent by weight, in terms of TiO.sub.2, of an oxy-nitride of titanium and aluminum exists in the aluminum nitride sintered body. The aluminum nitride sintered body has a breakdown voltage of 20 kV/mm. The sintered body is obtained by nitriding aluminum nitride raw material powder in a nitrogen atmosphere at a temperature of 800 to 1400.degree. C., adding an oxy-nitride of titanium thereto with a sintering assistant, and sintering the mixture.

摘要翻译： 氮化铝烧结体具有高的击穿电压，用作特别适用于高集成电路的衬底材料。 氮化铝烧结体含有钛，其以氮化铝晶格内的固体溶质以至少50ppm至不大于1000ppm的重量比包含在其中。 由电子自旋共振的吸收光谱确定的烧结体中不成对的电子浓度为至少1×10 13 / g。 在氮化铝烧结体中存在钛和铝的氮氧化物的至少0.1重量％且不超过5.0重量％（以TiO 2计）。 氮化铝烧结体的击穿电压为20kV / mm。 烧结体是通过在氮气气氛中在800〜1400℃的温度下氮化氮化铝原料粉末，用烧结助剂向其中加入钛的氮氧化物，烧结该混合物而得到的。

公开(公告)号：US5343150A

公开(公告)日：1994-08-30

申请号：US98116

申请日：1993-07-26

申请人： Seiji Nakahata ,  Kouichi Sogabe ,  Akira Yamakawa

发明人： Seiji Nakahata ,  Kouichi Sogabe ,  Akira Yamakawa

IPC分类号： C04B35/581 ,  G01N24/10 ,  G01R33/60 ,  G01V3/00 ,  G01N25/18 ,  G01R33/20

CPC分类号： G01R33/60 ,  G01N24/10

摘要： Disclosed herein is a measuring apparatus and a measuring method which can measure a physical property value such as an oxygen content or thermal conductivity of a sample material such as an aluminum nitride sintered body with high accuracy, over the entire material in a short time. A microwave oscillation source generates microwaves. A sample material to be evaluated, such as an aluminum nitride sintered body, is placed in a cavity resonator, irradiated with microwaves (M), and subjected to a magnetic field (H) applied by electromagnets. An amount of microwaves absorbed by the object is measured by a microwave absorption measuring unit. This amount of microwave absorption is obtained from an electron spin resonance spectrum. The concentration of unpaired electrons in the object is obtained from the measured amount of microwave absorption on the basis of a known relation between an amount of microwave absorption and concentration of unpaired electrons. The concentration of unpaired electrons is converted into a physical property value such as an oxygen content or a thermal conductivity value. Such conversion processing is carried out by a computer.

摘要翻译： 本发明公开了一种能够在短时间内在整个材料上高精度地测量诸如氮化铝烧结体的样品材料的氧含量或热导率的物理性质值的测量装置和测量方法。 微波振荡源产生微波。 将待评价的样品例如氮化铝烧结体放置在空腔谐振器中，用微波（M）照射，并施加由电磁体施加的磁场（H）。 通过微波吸收测量单元测量被物体吸收的微波量。 从电子自旋共振谱获得微波吸收量。 基于微波吸收量与不成对电子浓度之间的已知关系，从测量的微波吸收量获得物体中不成对电子的浓度。 不成对电子的浓度被转换成诸如氧含量或热导率值的物理性质值。 这样的转换处理由计算机执行。

公开(公告)号：US08283694B2

公开(公告)日：2012-10-09

申请号：US13027649

申请日：2011-02-15

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L33/00

CPC分类号： H01L21/02658 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003

摘要： A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013, wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.

摘要翻译： 得到可以形成质量良好的外延生长层的GaN衬底。 作为III族氮化物衬底的GaN衬底具有表面的每平方厘米的氯原子数不大于2×1014的表面，并且每平方厘米表面的硅原子数不大于3 ×1013，其中所述表面的平面取向为（0001）面，（11-20）面，（10-12）面，（10-10）面，（20-21）面 ，（10-11）面，（11-21）面，（11-22）面和（11-24）面的纤锌矿结构。

公开(公告)号：US08227826B2

公开(公告)日：2012-07-24

申请号：US12877086

申请日：2010-09-07

申请人： Hideyuki Ijiri ,  Seiji Nakahata

发明人： Hideyuki Ijiri ,  Seiji Nakahata

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L29/22 ,  H01L29/227 ,  H01L33/00

CPC分类号： H01L33/0075 ,  C30B29/406 ,  C30B33/00

摘要： Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 μm, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the direction, and from 0° to 1° in the direction.

摘要翻译： 提供一种存储可以制造具有良好特性的半导体器件的GaN衬底的方法，存储的衬底以及半导体器件以及制造半导体器件的方法。 在GaN衬底存储方法中，将GaN衬底（1）储存在氧气浓度为18体积％的气氛中。 ％以下，和/或12g / m 3以下的水蒸气浓度。 通过存储方法储存的GaN衬底上的第一主面的表面粗糙度Ra和第二主面的粗糙度Ra分别为不大于20nm且不大于20μm。 此外，使GaN基板使得主面与（0001）面在<100°方向上形成从0.05°至2°的偏轴角度，并且在<0001方向上从0°到1°， 11 20>方向。

公开(公告)号：US08067300B2

公开(公告)日：2011-11-29

申请号：US12431063

申请日：2009-04-28

申请人： Seiji Nakahata ,  Ryu Hirota ,  Kensaku Motoki ,  Takuji Okahisa ,  Kouji Uematsu

发明人： Seiji Nakahata ,  Ryu Hirota ,  Kensaku Motoki ,  Takuji Okahisa ,  Kouji Uematsu

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02642 ,  H01L21/02647

摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0

摘要翻译： 将种子以规则的图案植入到下衬底上。 通过小平面生长法在混合晶体生长在种子植入的底层基底上，使Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0