摘要:
A solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.
摘要:
A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer. The storage channel layer is arranged so as to contain a first surface portion which adjoins the transfer channel layer and is in contact with a covering insulating film, and a second surface portion which adjoins the release channel layer and is in contact with the covering insulating film. In the surface of the substrate, a p-type source and drain layers of the charge-sensing transistor are formed so as to face each other with the sensing channel interposed therebetween. The potential of the storage channel layer without charges is set higher than that of the release drain layer.
摘要:
An image signal processing apparatus has a fault correcting circuit for replacing a signal output by a fault pixel included in a solid-state image sensor with a signal output by a normal pixel arranged near the fault pixel to correct the fault pixel signal. The fault correcting circuit comprises a memory for storing a data code representing the position and type of the fault pixel, a decoder circuit for converting the data code read from the memory, into a pixel-fault correction pulse, a dividing/delay circuit for dividing a pixel signal output from the image sensor into a plurality of pixel signals and delaying these pixel signals by different delay times, and a switch circuit for selecting pixel signals delayed by different delay times, in accordance with the pixel-fault correction pulse, thereby to replace the fault pixel signal with the normal pixel signal.
摘要:
A solid state image sensing device comprises an image sensor for outputting optical images as signal charges, a charge transfer section for transferring signal charges, a first reading section for non-destructively reading transferred signal charges as a plurality of first output signal components, a detecting section for detecting the difference between the first output signal components, a second reading section for adding the signal charges corresponding to the first output signal components which correspond to the difference signal and reading the added signal charges as a second output signal component, an adding section for inserting at least one signal component corresponding to the second output signal component to one or more first output signal components which are canceled due to charge-transfer for addition of signal charges and generating an output signal including a third output signal component, and a level lowering section for lowering the signal levels of the second and third output signal components according to the number of addition stages.
摘要:
A solid state image sensor comprises a CCD type image sensing device and a signal detector. This signal detector comprises an FDA type signal detection circuit connected to a signal pick-up terminal of the image sensing device and having a small amount of saturating signals and low noise, an FDA type signal detection circuit connected to the signal pick-up terminal and having a large amount of saturating signals and high noise, and a signal composing circuit for composing the outputs of both signal detection circuits and outputting a composed output and changing a composing ratio in accordance with the output of the FDA type signal detection circuit.
摘要:
A solid state image sensing device comprises a great number of light receiving elements arrayed in rows and columns, a plurality of vertical CCD registers respectively coupled to columns of the light receiving elements for vertically transferring signal charges sensed by the light receiving elements, a horizontal CCD register for horizontally transferring the signal charges transferred from the vertical CCD register, an adder section for adding together signal charges obtained from a predetermined number of light receiving elements arrayed in columns and rows to form one added signal charge and for obtaining a plurality of added signal charges for all the light receiving elements in each of fields, and a field switcher for introducing signal charges obtained from an array of light receiving elements with at least one element shifted from the previous field to the adder section in each field.
摘要:
The solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.
摘要:
In a real-time video signal processor for processing an input digital video signal divisible into a succession of principal blocks each of which has at least one scanning line and a time duration shorter than a frame period, each principal block is divided into at least two partial blocks with each scanning line divided into the respective partial blocks. A plurality of signal processing modules are assigned with the respective partial blocks of each principal block, respectively. Responsive to the input digital video signal and an additional digital video signal, the signal processing modules process the respective partial blocks of each principal block into processed signals during the time duration, respectively. Each processed signal comprises a first partial signal used as an output signal of the processor and a second partial signal. A delaying circuit delays the second partial signals derived from the signal processing modules into a delayed signal having a delay equal to a difference between the frame period and the time duration. The delayed signal is used as the additional signal. A plurality of the real-time video signal processors may be connected in cascade to each other. Two memory units may be used instead of the delaying circuit. Readout operation of each principal block from the memory units is controlled by control signals produced by a control signal producing circuit. Principal blocks read out of the memory units are supplied to the signal processing modules.
摘要:
A solid-state image sensor has an electrically floating carrier detecting electrode formed on a substrate, into which the signal carriers are transmitted, a sense amplifier circuit detecting the variation in a voltage of the electrode at the time of transferring the carriers, and a resetting electrode for resetting the potential of the electrode to a predetermined potential at every read-out period of the picture element section. A circuit arrangement for removing noise is provided to have two switches which switch to alternatively become conductive in response to control pulse signals. The first switch becomes conductive during a first period within one picture element period. During the first period the CCD output signal contains an effective image signal component. The second switch becomes conductive during a second period during which the CCD output signal contains a reset noise component, thereby forcibly fixing the level of the reset noise signal to a DC reference potential so that reset noise can be removed.
摘要:
A solid state image sensing system includes a CCD and a vibration table. The vibration table swing-drives the CCD in response to a drive signal generated by a drive pulse generator, in such a manner that the CCD is vibrated in a horizontal direction in one vibration cycle consisting of two succeeding frame periods each having A and B fields.