公开(公告)号：US4958337A

公开(公告)日：1990-09-18

申请号：US344530

申请日：1989-04-28

申请人： Toshihiro Yamanaka ,  Nobuyuki Horie ,  Shozou Kobayashi ,  Toshihisa Deguchi ,  Takeshi Yamaguchi ,  Shigemi Maeda ,  Yoshiki Nishioka ,  Teruki Sugiura

发明人： Toshihiro Yamanaka ,  Nobuyuki Horie ,  Shozou Kobayashi ,  Toshihisa Deguchi ,  Takeshi Yamaguchi ,  Shigemi Maeda ,  Yoshiki Nishioka ,  Teruki Sugiura

IPC分类号： G11B5/016 ,  G11B20/18

CPC分类号： G11B20/1816 ,  G11B5/016

摘要： A disk recording checking method in which recording is performed on a disk having radially different recording tracks each divided circumferentially into a plurality of sectors. The method employs a continuous writing device for continuously writing data onto a predetermined number of the sectors, and a continuous checking device for checking the data, while continuously reading the data from the predetermined number of the sectors. The method utilized checks both the number of errors in each code sequence and the total number of errors in each sector to determine if the data in the sector is valid.

摘要翻译： 一种磁盘记录检查方法，其中在具有径向不同的记录磁道的磁盘上执行记录，每个记录磁道分别沿周向分成多个扇区。 该方法采用连续写入装置，用于将数据连续地写入预定数量的扇区;以及连续检查装置，用于在从预定数量的扇区连续读取数据的同时检查数据。 所使用的方法检查每个代码序列中的错误数量和每个扇区中的错误总数，以确定扇区中的数据是否有效。

公开(公告)号：US4910479A

公开(公告)日：1990-03-20

申请号：US299013

申请日：1989-01-19

申请人： Hiroshi Fuji ,  Shigemi Maeda ,  Takeshi Yamaguchi ,  Kunio Kojima ,  Toshihisa Deguchi ,  Shigeo Terashima

发明人： Hiroshi Fuji ,  Shigemi Maeda ,  Takeshi Yamaguchi ,  Kunio Kojima ,  Toshihisa Deguchi ,  Shigeo Terashima

IPC分类号： G11B7/00 ,  G11B7/005 ,  G11B11/105 ,  G11B19/02 ,  G11B20/10

CPC分类号： G11B20/10027 ,  G11B11/10515 ,  G11B11/10597 ,  G11B19/02 ,  G11B20/10009 ,  G11B7/005

摘要： An automatic gain control device for use in an optical memory device has a circuit for producing an amplification control signal which is fed back to a gain control amplifier through a sample-hold circuit. A pulse train detection circuit is provided for detecting the pulse train indicating that the data stored are a on the optical memory device is being playedback. When the pulse train is detected, the sample-hold circuit is made inactive so that the amplification control signal is directly fed back to the gain control amplifier, and when the pulse train ends, the sample-hold circuit is made active to hold the amplification control signal obtained at the end of the pulse train and to produce the amplification control signal held in the sample-hold circuit.

公开(公告)号：US4040823A

公开(公告)日：1977-08-09

申请号：US675528

申请日：1976-04-09

申请人： Takeshi Yamaguchi

发明人： Takeshi Yamaguchi

IPC分类号： B22F3/11 ,  C04B35/565 ,  C22C1/05 ,  F24H1/10 ,  H05B3/14 ,  B22F1/00

CPC分类号： B22F3/1121 ,  C04B35/565 ,  C22C1/051 ,  F24H1/101 ,  H05B3/148 ,  B22F2998/00 ,  H05B2203/021

摘要： A fluid-permeable electrically energized heat generating member of a desired shape, such as a rectangular brick, is formed by (1) mixing (a) about 87 to 94% by weight of a first material which contains about 80 to 95% by weight of SiC and about 5 to 20% by weight of a mixture of carbonyl iron, nickel-chromium alloy, cobalt and carbon; (b) about 5 to 10% by weight of a second material which contains about 75 to 95% by weight of an organic binder material, such as a linseed oil and about 5 to 25% by weight of a foaming material, such as methylene diphenyl isocyanate; and (c) about 0.2 to 3% by weight of a third material selected from the group consisting of polystyrene preformed powder, sawdust, wood flour, starch, corn flour and mixtures thereof; (2) placing the resultant mixture in a select mold and subjecting the mold to curing conditions sufficient to provide self-sustaining members composed of the foregoing mixture; (3) removing the self-sustaining members from the molds and subjecting them to a heat at a temperature in the range of about 250.degree. to 350.degree. F. for a period of time sufficient to render the bodies electrically conductive; (4) sintering the electrically conductive bodies as by passing a controlled electrical current through each member until a temperature in the range of about 1000.degree. to 1600.degree. F. is achieved within the member; and (5) metallizing terminal sides of each member, as by applying an aluminum layer thereon for contact with a suitable electrical circuit.

摘要翻译： 通过（1）混合（a）约87至94重量％的含有约80至95重量％的第一材料，形成所需形状的流体可渗透的电能发热元件，例如矩形砖 的SiC和约5-20重量％的羰基铁，镍 - 铬合金，钴和碳的混合物; （b）约5至10重量％的第二材料，其包含约75至95重量％的有机粘合剂材料，例如亚麻籽油和约5至25重量％的起泡材料，例如亚甲基 二苯基异氰酸酯; 和（c）约0.2至3重量％的选自聚苯乙烯预制粉末，锯屑，木粉，淀粉，玉米粉及其混合物的第三材料; （2）将所得混合物置于精选模具中，使模具处于足以提供由上述混合物构成的自持构件的固化条件; （3）将自支撑构件从模具中取出并在约250°至350°F范围内的温度下进行加热，持续一段时间足以使机体导电; （4）通过使受控的电流通过每个部件烧结导电体，直到在该部件内实现约1000°至1600°F范围内的温度; 以及（5）通过在其上施加与合适的电路接触的铝层来金属化每个构件的端子侧。

公开(公告)号：US08895952B2

公开(公告)日：2014-11-25

申请号：US13404678

申请日：2012-02-24

申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

公开(公告)号：US08846484B2

公开(公告)日：2014-09-30

申请号：US13397414

申请日：2012-02-15

申请人： Albert Sanghyup Lee ,  Chien-Lan Hsueh ,  Tim Minvielle ,  Takeshi Yamaguchi

发明人： Albert Sanghyup Lee ,  Chien-Lan Hsueh ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC分类号： H01L45/00 ,  H01L21/20

CPC分类号： H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

摘要： Systems and methods for preparing resistive switching memory devices such as resistive random access memory (ReRAM) devices wherein both oxide and nitride layers are deposited in a single chamber are provided. Various oxide and nitride based layers in the ReRAM device such as the switching layer, current-limiting layer, and the top electrode (and optionally the bottom electrode) are deposited in the single chamber. By fabricating the ReRAM device in a single chamber, throughput is increased and cost is decreased. Moreover, processing in a single chamber reduces device exposure to air and to particulates, thereby minimizing device defects.

摘要翻译： 提供用于制备诸如电阻式随机存取存储器（ReRAM）器件的电阻式开关存储器件的系统和方法，其中氧化物层和氮化物层都沉积在单个腔室中。 ReRAM器件中的诸如开关层，限流层和顶部电极（以及可选的底部电极）中的各种氧化物和氮化物层被沉积在单个室中。 通过在单个室中制造ReRAM器件，增加了吞吐量并降低了成本。 此外，在单个室中的处理减少了设备暴露于空气和微粒，从而使设备缺陷最小化。

公开(公告)号：US08698228B2

公开(公告)日：2014-04-15

申请号：US12886202

申请日：2010-09-20

申请人： Takeshi Araki ,  Takeshi Yamaguchi ,  Mariko Hayashi ,  Kohichi Kubo ,  Takayuki Tsukamoto

发明人： Takeshi Araki ,  Takeshi Yamaguchi ,  Mariko Hayashi ,  Kohichi Kubo ,  Takayuki Tsukamoto

IPC分类号： H01L29/792

CPC分类号： H01L27/101 ,  B82Y10/00 ,  G11B5/743 ,  G11B9/04 ,  G11B9/1472 ,  G11B9/149 ,  G11C11/22 ,  G11C13/0007 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1675

摘要： According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.

摘要翻译： 根据一个实施例，非易失性存储器件包括堆叠结构和电压施加部分。 堆叠结构包括存储部分和与存储器部分堆叠并具有面向存储部分的部分的表面的电极。 电压施加部分向存储器部分施加电压以引起存储器部分中的电阻的变化以存储信息。 表面包括第一区域和第二区域。 第一区域包含金属元素Si，Ga和As中的至少一种。 第一个区域是导电的。 第二区域包含金属元素Si，Ga和As中的至少一种，并且具有高于第一区域中的非金属元素的含量比的非金属元素的含量比。 第一区域和第二区域中的至少一个在表面上具有各向异性的形状。

公开(公告)号：US08274481B2

公开(公告)日：2012-09-25

申请号：US11665999

申请日：2005-10-21

申请人： Tomohiko Nishimura ,  Saburoh Miyamoto ,  Toshihisa Nakano ,  Hiroshi Hamada ,  Takeshi Yamaguchi

发明人： Tomohiko Nishimura ,  Saburoh Miyamoto ,  Toshihisa Nakano ,  Hiroshi Hamada ,  Takeshi Yamaguchi

IPC分类号： G06F3/041

CPC分类号： G06F3/044

摘要： A touch-sensored display device 20 according to the present invention includes: a counter substrate 6 disposed on a viewer side of an active matrix substrate 8 via a display medium layer 4, the counter substrate 6 having a counter electrode 5 which opposes pixel electrodes; a display panel driving circuit 14 for supplying to the counter electrode 5 a common voltage which undergoes periodic inversion in polarity; a transparent conductive film 7 for position detection placed so as to oppose the counter electrode 5 via the counter substrate 6; a strobe signal generation circuit 32 for generating a strobe signal which is in synchronization with a polarity inversion period of the common voltage, and a noise-cut current signal generation circuit 30 for generating a noise-cut current signal which is obtained by eliminating based on the strobe signal a predetermined portion from a current flowing from a terminal connected to the transparent conductive film 7 for position detection.

摘要翻译： 根据本发明的感触显示装置20包括：经由显示介质层4设置在有源矩阵基板8的观察者侧的对置基板6，对置基板6具有与像素电极相对的对置电极5; 显示面板驱动电路14，用于向对向电极5提供在极性上经历周期性反转的公共电压; 用于位置检测的透明导电膜7，经由对置基板6与相对电极5相对放置; 用于产生与公共电压的极性反转周期同步的选通信号的选通信号发生电路32，以及用于产生噪声截止电流信号的噪声截止电流信号产生电路30，该噪声切断电流信号通过基于 选通脉冲从从连接到用于位置检测的透明导电膜7的端子流出的电流中发出预定的部分。

公开(公告)号：US20110216575A1

公开(公告)日：2011-09-08

申请号：US13043097

申请日：2011-03-08

申请人： Takeshi Yamaguchi ,  Chikayoshi Kamata

发明人： Takeshi Yamaguchi ,  Chikayoshi Kamata

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： G11C13/003 ,  G11C2213/35 ,  G11C2213/55 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/147

摘要： According to one embodiment, a nonvolatile memory device includes a recording layer and a conductive first layer. The recording layer includes a main group element, a transition element, and oxygen. The recording layer is capable of recording information by changing reversibly between a high resistance state and a low resistance state. The first layer is made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide. The first layer is provided adjacent to the recording layer. The first layer includes the main group element with a concentration lower than a concentration of the main group element of the recording layer.

摘要翻译： 根据一个实施例，非易失性存储器件包括记录层和导电第一层。 记录层包括主要组元素，过渡元素和氧气。 记录层能够通过在高电阻状态和低电阻状态之间可逆地改变来记录信息。 第一层由选自金属，金属氧化物，金属氮化物和金属碳化物中的至少一种制成。 第一层邻近记录层设置。 第一层包括浓度低于记录层的主要组分的浓度的主要组元素。

公开(公告)号：US20110073927A1

公开(公告)日：2011-03-31

申请号：US12886079

申请日：2010-09-20

申请人： Takeshi ARAKI ,  Takeshi Yamaguchi ,  Mariko Hayashi ,  Kohichi Kubo ,  Takayuki Tsukamoto

发明人： Takeshi ARAKI ,  Takeshi Yamaguchi ,  Mariko Hayashi ,  Kohichi Kubo ,  Takayuki Tsukamoto

IPC分类号： H01L29/772 ,  H01L21/28

CPC分类号： G11B9/1472 ,  B82Y10/00 ,  G11B5/746 ,  G11B9/04 ,  G11B9/149 ,  G11C13/0007 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/101 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1675

摘要： According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.

摘要翻译： 根据一个实施例，非易失性存储器件包括堆叠结构，其包括存储器部分和具有面向存储器部分的表面的电极; 以及电压施加部分，用于向存储器部分施加电压以改变电阻。 表面包括第一和第二区域。 第一区域包含第一非金属元素和金属元素Si，Ga和As的至少一种元素。 第二区域包含第二非金属元素和至少一个元素。 第二区域的第二非金属元素的含量比率高于第一区域。 第二非金属元素与至少一种元素之间的电负性的差异大于第一非金属元素与至少一种元素之间的电负性。 第一和第二区域中的至少一个具有各向异性形状。

公开(公告)号：US07850904B2

公开(公告)日：2010-12-14

申请号：US10554614

申请日：2004-06-02

申请人： Katsuaki Osato ,  Muneo Omura ,  Yoshinori Suto ,  Koji Tamura ,  Masao Tsurui ,  Takeshi Yamaguchi ,  Jin Ogawa ,  Yoshihiko Iwamoto ,  Jun Kakizaki

发明人： Katsuaki Osato ,  Muneo Omura ,  Yoshinori Suto ,  Koji Tamura ,  Masao Tsurui ,  Takeshi Yamaguchi ,  Jin Ogawa ,  Yoshihiko Iwamoto ,  Jun Kakizaki

IPC分类号： A61L2/06 ,  A61L9/00 ,  B02C1/00 ,  B02B1/00 ,  A62D3/00 ,  B08B9/00 ,  B08B3/00 ,  F26B5/04 ,  F26B19/00 ,  F26B21/00

CPC分类号： B65G53/48 ,  B01J19/20 ,  B01J2219/00162 ,  B01J2219/182 ,  B09B3/00 ,  B27N1/00 ,  B27N3/007 ,  C10L9/086 ,  Y02E50/30 ,  Y10S241/38

摘要： An object of the present invention is to continuously feed an object to be treated to a high-pressure reactor which treats the object to be treated containing 10 mass % or more of water under high pressure, while preventing backflow of a high-pressure atmosphere from the high-pressure reactor. This is embodied by making a configuration such that the object to be treated is fed to the high-pressure reactor connected to a discharge port of a screw feeder which is provided with a feed unit for the object to be treated and the discharge port on one end side and the other end side respectively and forms a high-pressure atmosphere pressurized to, for example, 2 MPa or higher, while air-tightness between the high-pressure atmosphere and the one end side of the screw feeder is maintained by a sealing action of an accumulation compressed on the other end side of the screw feeder.

摘要翻译： 本发明的目的是将待处理物体连续地供给到高压反应器中，高压反应器在高压下将高达10％ 高压反应堆。 这是通过使被处理物被供给到连接到螺旋给料器的排出口的高压反应器的构造来实现的，该螺旋给料器设置有用于待处理物体的进料单元和排出口 端部侧和另一端侧，形成加压至例如2MPa以上的高压气氛，同时通过密封保持高压气氛与螺旋给料器的一端侧的气密性 在螺旋给料器的另一端侧压缩的积聚的作用。