公开(公告)号：US10381586B2

公开(公告)日：2019-08-13

申请号：US15913164

申请日：2018-03-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Shu-Jen Han ,  Jianshi Tang

IPC: H01L51/10 ,  H01L51/05 ,  H01L51/00

Abstract: A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the dielectric layer. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. Metal contacts are formed on the channel material in the openings in the patterned resist layer and over portions of the patterned resist layer to protect sidewalls of the metal contacts to prevent degradation of the metal contacts.

公开(公告)号：US10374179B2

公开(公告)日：2019-08-06

申请号：US16247326

申请日：2019-01-14

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Sarunya Bangsaruntip ,  Shu-Jen Han ,  HsinYu Tsai

IPC: H01L29/06 ,  H01L51/05 ,  H01L51/00

Abstract: In one aspect, a method for placing carbon nanotubes on a dielectric includes: using DSA of a block copolymer to create a pattern in the placement guide layer on the dielectric which includes multiple trenches in the placement guide layer, wherein there is a first charge on sidewall and top surfaces of the trenches and a second charge on bottom surfaces of the trenches, and wherein the first charge is different from the second charge; and depositing a carbon nanotube solution onto the dielectric, wherein self-assembly of the deposited carbon nanotubes within the trenches occurs based on i) attractive forces between the first charge on the surfaces of the carbon nanotubes and the second charge on the bottom surfaces of the trenches and ii) repulsive forces between the first charge on the surfaces of the carbon nanotubes and the first charge on sidewall and top surfaces of the trenches.

公开(公告)号：US20190234800A1

公开(公告)日：2019-08-01

申请号：US16380042

申请日：2019-04-10

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Abram L. Falk ,  Damon B. Farmer ,  Shu-Jen Han ,  George S. Tulevski

IPC: G01J5/00 ,  G01J5/20 ,  G01J5/02

CPC classification number: G01J5/0018 ,  G01J5/023 ,  G01J5/046 ,  G01J5/0862 ,  G01J5/20 ,  G01J5/602 ,  G01J2005/0051 ,  G01J2005/0074 ,  G01J2005/0077

Abstract: A computer-implemented method of forming a thermal-based electronic image of an object that includes receiving electromagnetic radiation emitted by the object at an optically sensitive layer including a superpixel having a plurality of pixels. Each pixel of the plurality of pixels includes a plasmonic absorber having a characteristic resonance wavelength and that generates a radiance measurement of the electromagnetic radiation at its characteristic resonance wavelength. The method further provides for determining, at a processor, an emissivity and temperature for the electromagnetic radiation received at the superpixel using the radiance measurements obtained at the pixels of the superpixel. In addition, the method provides for forming an image of the object from the determined emissivity and temperature.

公开(公告)号：US10365240B2

公开(公告)日：2019-07-30

申请号：US15811265

申请日：2017-11-13

Applicant: International Business Machines Corporation

Inventor： Stephen W. Bedell ,  Shu-Jen Han ,  Ning Li ,  Devendra K. Sadana

IPC: G01N27/04 ,  H01L23/49 ,  H01L23/00 ,  H01L27/08 ,  H01L49/02 ,  H01L41/18 ,  H01L27/02 ,  H01L21/02

Abstract: A material removal process referred to as spalling is used to provide flexible and stretchable sensors that can be used for healthcare monitoring, bio-medical devices, wearable electronic devices, artificial skin, large area sensing, etc. The flexible and stretchable sensors of the present application have high sensitivity that is comparable to that of a bulk silicon sensor. The flexible and stretchable sensors comprise single crystalline spring-like structures that couple various resistor structures together.

公开(公告)号：US20190181367A1

公开(公告)日：2019-06-13

申请号：US15838487

申请日：2017-12-12

Applicant: International Business Machines Corporation

Inventor： Damon Brooks Farmer ,  Shu-Jen Han ,  Jianshi Tang

IPC: H01L51/05 ,  C01B32/168 ,  H01L51/00 ,  H01L21/20 ,  H01L27/28 ,  H01L21/04

CPC classification number: H01L51/0558 ,  C01B32/168 ,  H01L21/041 ,  H01L21/20 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/057

Abstract: The subject embodiments relate to carbon nanotube (CNT) transistors with carrier blocking using thin dielectric under the drain or source and drain contacts. According to an embodiment, a transistor is provided that comprises a CNT channel layer, a metal source contact formed on the carbon nanotube channel layer, and a metal drain contact formed on the carbon nanotube channel layer. The transistor structure further comprises a drain dielectric layer formed adjacent to and between a lower surface of the metal drain contact and an upper surface of the carbon nanotube channel layer. In one or more implementations, the drain dielectric layer comprises a material that suppresses injection of a first type of carrier into the CNT channel layer and facilitates the injection of a second type of carrier into the CNT channel layer.

公开(公告)号：US10319927B2

公开(公告)日：2019-06-11

申请号：US14951847

申请日：2015-11-25

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Shu-Jen Han ,  Jianshi Tang

IPC: H01L21/20 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05

Abstract: A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.

公开(公告)号：US10319926B2

公开(公告)日：2019-06-11

申请号：US14933339

申请日：2015-11-05

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Shu-Jen Han ,  Jianshi Tang

IPC: H01L29/06 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05

Abstract: A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.

公开(公告)号：US20190137392A1

公开(公告)日：2019-05-09

申请号：US16238890

申请日：2019-01-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ali Afzali-Ardakani ,  Abram L. Falk ,  Damon B. Farmer ,  Shu-Jen Han ,  George S. Tulevski

IPC: G01N21/552

Abstract: A method of forming a chemical sensor includes forming a dielectric layer on an electrode. A carbon nanotube film is deposited on the dielectric layer. The carbon nanotube film is patterned into strips.

公开(公告)号：US10243143B2

公开(公告)日：2019-03-26

申请号：US15699527

申请日：2017-09-08

Applicant: International Business Machines Corporation

Inventor： Martin M. Frank ,  Shu-Jen Han ,  George S. Tulevski

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/10

Abstract: A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.

公开(公告)号：US10205097B2

公开(公告)日：2019-02-12

申请号：US15855477

申请日：2017-12-27

Applicant: International Business Machines Corporation

Inventor： Damon B. Farmer ,  Martin M. Frank ,  Shu-Jen Han

IPC: H01L29/06 ,  H01L29/08 ,  H01L51/00 ,  H01L29/786 ,  H01L51/05

Abstract: Dielectric treatments for carbon nanotube devices are provided. In one aspect, a method for forming a carbon nanotube-based device is provided. The method includes: providing at least one carbon nanotube disposed on a first dielectric; removing contaminants from surfaces of the first dielectric; and depositing a second dielectric onto the first dielectric and at least partially surrounding the at least one carbon nanotube. A carbon nanotube-based device is also provided.