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131 条记录 (耗时 0.032 秒)

    Plasma enhanced atomic layer deposition system and method
    52.
    发明授权
    Plasma enhanced atomic layer deposition system and method 有权
    等离子体增强原子层沉积系统和方法

    公开(公告)号：US08163087B2

    公开(公告)日：2012-04-24

    申请号：US11094461

    申请日：2005-03-31

    申请人： Jacques Faguet ,  Frank M. Cerio, Jr. ,  Tsukasa Matsuda ,  Kaoru Yamamoto

    发明人： Jacques Faguet ,  Frank M. Cerio, Jr. ,  Tsukasa Matsuda ,  Kaoru Yamamoto

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45542 ,  C23C16/5096 ,  H01J37/32477

    摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.

    摘要翻译： 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。

    Film forming method, plasma film forming apparatus and storage medium
    53.
    发明授权
    Film forming method, plasma film forming apparatus and storage medium 有权
    成膜方法，等离子体成膜装置和存储介质

    公开(公告)号：US08026176B2

    公开(公告)日：2011-09-27

    申请号：US12223781

    申请日：2007-02-09

    申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

    发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

    IPC分类号： H01L21/311

    CPC分类号： C23C14/046 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883

    摘要： A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

    摘要翻译： 通过等离子体溅射将金属嵌入设置在处理对象（例如半导体晶片）的表面中的微观凹槽中的技术。 交替进行成膜步骤和扩散步骤。 成膜步骤在凹槽中沉积少量的金属膜。 扩散步骤将沉积的金属膜移向凹部的底部。 在成膜步骤中，施加到用于支撑晶片的载物台的偏置功率被设定为确保在晶片的表面上由于金属颗粒的吸入引起的金属沉积速率基本相等的值 到等离子体的溅射蚀刻速率。 在扩散步骤中，晶片保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

    Method of integrating PEALD Ta-containing films into Cu metallization
    54.
    发明授权
    Method of integrating PEALD Ta-containing films into Cu metallization 有权
    将含有PEALD的含Ta的膜整合到Cu金属化中的方法

    公开(公告)号：US07959985B2

    公开(公告)日：2011-06-14

    申请号：US11378263

    申请日：2006-03-20

    申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    IPC分类号： C23C16/00 ,  H05H1/00

    CPC分类号： C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

    摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

    摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

    Film formation processing apparatus and method for determining an end-point of a cleaning process
    55.
    发明授权
    Film formation processing apparatus and method for determining an end-point of a cleaning process 失效
    用于确定清洁处理的终点的成膜处理装置和方法

    公开(公告)号：US07894059B2

    公开(公告)日：2011-02-22

    申请号：US11933114

    申请日：2007-10-31

    申请人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

    发明人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

    IPC分类号： G01N21/00

    CPC分类号： G01N1/24 ,  C23C16/4405 ,  C23C16/4412 ,  G01N15/06 ,  G01N2015/0693 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68742 ,  Y10T137/8593 ,  Y10T137/87652 ,  Y10T137/8766

    摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

    摘要翻译： 本发明提供一种粒子测量系统，其设置在处理系统40中，该处理系统40产生通过真空泵98排出处理室48中的空气或气体而获得的气氛，并将与半导体制造有关的工艺应用于晶片W 附着在排气管90上，排气管90将处理室48的排气口86与真空泵98连接，并测量废气中的颗粒数量及其测量方法，该系统和方法提供处理 系统和清洁方法，其通过基于废气中的颗粒数量确定终点并执行不需要的膜的清洁来终止蚀刻工艺。

    Flat detector and medium detector
    56.
    发明授权
    Flat detector and medium detector 有权
    平板检测器和介质检测器

    公开(公告)号：US07888615B2

    公开(公告)日：2011-02-15

    申请号：US12434163

    申请日：2009-05-01

    申请人： Eizo Kurihara ,  Tsukasa Matsuda ,  Kunihiro Takahashi ,  Hiroyoshi Inoue ,  Mario Fuse ,  Shoji Yamaguchi

    发明人： Eizo Kurihara ,  Tsukasa Matsuda ,  Kunihiro Takahashi ,  Hiroyoshi Inoue ,  Mario Fuse ,  Shoji Yamaguchi

    IPC分类号： B07C5/344

    CPC分类号： G01N27/725

    摘要： A flat detector includes a first flat member and a second flat member both made of a nonmagnetic nonmetal, a first conductive wiring that generates an alternating magnetic field, the first conductive wiring being disposed on a surface of the first flat member facing toward the second flat member, a first layer made of a nonmagnetic metal and disposed at least on a surface of the first flat member, a second conductive wiring that detects a signal generated by magnetization reversal of a magnetic material, the magnetization reversal being caused by the alternating magnetic field generated by the first conductive wiring, the second conductive wiring being disposed on a surface of the second flat member facing toward the first flat member, and a second layer made of a nonmagnetic metal and disposed at least on a surface of the second flat member.

    摘要翻译： 平板检测器包括由非磁性非金属制成的第一平坦构件和第二平坦构件，产生交变磁场的第一导电布线，第一导电布线设置在面向第二平面的第一平坦构件的表面上 构件，由非磁性金属制成的第一层并且至少设置在所述第一平坦构件的表面上;第二导电布线，其检测由磁性材料的磁化反转产生的信号，所述磁化反转是由交变磁场引起的 由所述第一导电布线产生，所述第二导电布线设置在所述第二平坦构件的面向所述第一平坦构件的表面上，所述第二层由非磁性金属制成并且至少设置在所述第二平坦构件的表面上。

    Photoprotein derived from okinawan squid and gene encoding the photoprotein
    60.
    发明授权
    Photoprotein derived from okinawan squid and gene encoding the photoprotein 失效
    来自冲绳鱿鱼的光蛋白和编码光蛋白的基因

    公开(公告)号：US07268215B2

    公开(公告)日：2007-09-11

    申请号：US10835180

    申请日：2004-04-30

    申请人： Minoru Isobe ,  Tsukasa Matsuda

    发明人： Minoru Isobe ,  Tsukasa Matsuda

    IPC分类号： C07K14/00 ,  C07H21/04

    CPC分类号： G01N33/84 ,  C07K14/43504 ,  C12Q1/66

    摘要： By using a bioluminescence, a method for detection of a monovalent cation is provided and the method is a high sensitive and simple method. According to the present invention, an amino acid sequence of symplectin and a base sequence encoding the protein are provided. Symplectin is a photoprotein derived from Symplectoteuthis oualaniensis (okinawan squid). By using the photoprotein of the present invention, a monovalant cation can be detected by luminescence in the presence of a chromophore.

    摘要翻译： 通过使用生物发光，提供了检测一价阳离子的方法，该方法是高灵敏度和简单的方法。 根据本发明，提供了symplectin的氨基酸序列和编码该蛋白质的碱基序列。 Symplectin是来自Sym藜（Okinawan鱿鱼）的光蛋白。 通过使用本发明的光蛋白，可以通过在发色团存在下的发光来检测单价阳离子。