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公开(公告)号：US08163087B2
公开(公告)日：2012-04-24
申请号：US11094461
申请日：2005-03-31
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4409 , C23C16/45542 , C23C16/5096 , H01J37/32477
摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
摘要翻译： 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。
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公开(公告)号：US20060225655A1
公开(公告)日：2006-10-12
申请号：US11094461
申请日：2005-03-31
申请人： Jacques Faguet , Frank Cerio , Tsukasa Matsuda , Kaoru Yamamoto
发明人： Jacques Faguet , Frank Cerio , Tsukasa Matsuda , Kaoru Yamamoto
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4409 , C23C16/45542 , C23C16/5096 , H01J37/32477
摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
摘要翻译： 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。
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公开(公告)号：US07727912B2
公开(公告)日：2010-06-01
申请号：US11378270
申请日：2006-03-20
IPC分类号： H01L21/469
CPC分类号： H01L21/76843 , C23C16/32 , C23C16/36 , C23C16/45536 , C23C16/482 , H01L21/28562
摘要： A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.
摘要翻译： 一种用于在基板上形成薄膜的光增强原子层沉积。 该方法包括将衬底设置在被配置为执行LEALD处理的光增强原子层沉积（LEALD）系统的处理室中; 以及使用LEALD工艺在衬底上沉积膜，其中沉积包括（a）将衬底暴露于第一工艺材料，（b）将衬底暴露于含有还原剂的第二工艺材料上，并用第一 具有或不至少部分时间重叠的光辐射与基板暴露于第二工艺材料，（c）重复步骤（a）和（b），直到所需的膜沉积为止。 根据本发明的一个实施例，沉积膜可以是TaCN膜或TaC膜。
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公开(公告)号：US20090321247A1
公开(公告)日：2009-12-31
申请号：US12555068
申请日：2009-09-08
IPC分类号： C23C14/34
CPC分类号： C23C14/025 , C23C14/046 , C23C14/345 , C23C14/3492 , H01J37/32706 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76865
摘要： A method is provided of operating a deposition system to deposit coating material into high aspect ratio nano-sized features on a patterned substrate that enhances sidewall coverage compared to field area and bottom surface coverage while minimizing or eliminating overhang. The method includes performing a process step with a gross field area deposition rate of about 25 to 70 nm/min and simultaneously etching the barrier layer to establish a net field area deposition rate of about 5 to 40 nm/min. The method may also include first performing a protective layer deposition step with a field area deposition rate of about 5 to 20 nm/min without etching the underlying surface then performing a surface modification step with gross deposition and simultaneous etching at a field modification net deposition rate of about −10 to +40 nm/min.
摘要翻译： 提供了一种操作沉积系统以将涂层材料沉积在图案化衬底上的高纵横比纳米尺寸特征的方法，其增强了与场面积和底面覆盖率相比较，同时最小化或消除悬垂的侧壁覆盖。 该方法包括执行总场积淀积速率为约25至70nm / min的工艺步骤，同时蚀刻阻挡层以建立约5至40nm / min的净场致积率。 该方法还可以包括首先执行具有大约5至20nm / min的场区沉积速率的保护层沉积步骤，而不蚀刻下面的表面，然后在场修正网沉积速率下进行总沉积和同时蚀刻的表面改性步骤 约-10至+ 40nm / min。
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公开(公告)号：US07901545B2
公开(公告)日：2011-03-08
申请号：US10811326
申请日：2004-03-26
IPC分类号： C23C14/34
CPC分类号： H01L21/2855 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/3492 , H01J37/32706 , H01J2237/3327 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L2221/1078 , H01L2221/1089
摘要： An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.
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6.发明申请公开(公告)号：US20070218683A1
公开(公告)日：2007-09-20
申请号：US11378263
申请日：2006-03-20
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。
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7.发明授权公开(公告)号：US07959985B2
公开(公告)日：2011-06-14
申请号：US11378263
申请日：2006-03-20
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。
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8.发明申请Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开用于热和等离子体增强气相沉积的装置和操作方法公开(公告)号：US20070116872A1
公开(公告)日：2007-05-24
申请号：US11281372
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
CPC分类号： C23C16/4585 , C23C16/12 , C23C16/14 , C23C16/16 , C23C16/18 , C23C16/303 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/5096 , H01J37/32082 , H01J37/32495 , H01J2237/2001
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space. The system includes a sealing assembly configured to impede gas flow between the process space and the transfer space during translation of the substrate within the process space.
摘要翻译： 一种在衬底上进行气相沉积的方法，计算机可读介质和系统，其将衬底处理在与所述处理系统的传送空间真空隔离的处理系统的处理空间中，在第一位置或 在处理空间中的第二位置，同时保持与传送空间的真空隔离，并且在第一位置或第二位置处将材料沉积在所述基板上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 到所述第二组件并且被配置为在所述传送空间中的第一位置和所述处理空间中的第二位置之间支撑和平移所述衬底。 该系统包括密封组件，该密封组件构造成在工艺空间内的衬底平移过程中阻碍工艺空间与传送空间之间的气体流动。
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9.发明申请Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开用于热和等离子体增强气相沉积的装置和操作方法公开(公告)号：US20070116873A1
公开(公告)日：2007-05-24
申请号：US11281376
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
CPC分类号： C23C16/45517 , C23C16/4401 , C23C16/4412 , H01J37/32082 , H01J37/32495 , H01J37/32522
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.
摘要翻译： 一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度， 所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。 第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。
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公开(公告)号：US08895942B2
公开(公告)日：2014-11-25
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译： 描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置 用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。
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