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公开(公告)号：US20070077717A1
公开(公告)日：2007-04-05
申请号：US11303225
申请日：2005-12-15
IPC分类号： H01L21/336
CPC分类号： H01L21/02304 , H01L21/02145 , H01L21/02164 , H01L21/0228 , H01L21/02307 , H01L21/3141 , H01L21/31612 , H01L21/3162 , H01L29/6656
摘要： A method for forming a transistor of a semiconductor device includes forming a spacer oxide film having a uniform thickness i at a high speed. The method includes forming a plurality of gate stacks on a semiconductor substrate; and forming a spacer oxide film on a plurality of the gate stacks by alternately supplying trimethyl aluminum in a gaseous state and tris-(tert-alkoxy)-silanol in a gaseous state to the semiconductor substrate.
摘要翻译： 一种用于形成半导体器件的晶体管的方法包括以高速度形成具有均匀厚度i的间隔氧化膜。 该方法包括在半导体衬底上形成多个栅叠层; 并且通过交替地将气态的三甲基铝和气态的三（叔 - 烷氧基） - 硅烷醇交替供给到半导体衬底上，在多个栅极叠层上形成间隔氧化膜。
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公开(公告)号：US20070074635A1
公开(公告)日：2007-04-05
申请号：US11211785
申请日：2005-08-25
申请人： Philip Schumaker , Angelo Fancello , Jae Kim , Byung-Jin Choi , Daniel Babbs
发明人： Philip Schumaker , Angelo Fancello , Jae Kim , Byung-Jin Choi , Daniel Babbs
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： The present is directed towards a coupling system including, inter alia, a docking plate having a protrusion positioned thereon, the protrusion controlling an orientation of a body in contact therewith to facilitate a coupling of the body to the docking plate.
摘要翻译： 本发明涉及一种联接系统，其特别地包括具有定位在其上的突起的对接板，所述突起控制与其接触的主体的定向，以便于主体与对接板的联接。
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53.发明申请System to transfer a template transfer body between a motion stage and a docking plate 有权在运动台和对接板之间传送模板转印体的系统公开(公告)号：US20070071582A1
公开(公告)日：2007-03-29
申请号：US11211766
申请日：2005-08-25
申请人： Philip Schumaker , Angelo Fancello , Jae Kim , Byung-Jin Choi , Daniel Babbs
发明人： Philip Schumaker , Angelo Fancello , Jae Kim , Byung-Jin Choi , Daniel Babbs
IPC分类号： B65H1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/707
摘要： The present is directed towards an imprint lithography system including, inter alia, a docking plate; a motion stage having a range of motion associated therewith, the range of motion having a periphery spaced-apart from the docking plate a first distance; and a body, having first and second opposed sides spaced-apart a second distance, selectively coupled between the docking plate and the motion stage, the first distance being greater than the second distance to minimize a probability of a collision between the docking plate, the motion stage and the body while transferring the body between the docking plate and the motion stage.
摘要翻译： 本发明涉及一种压印光刻系统，其特别包括对接板; 具有与其相关联的运动范围的运动台，所述运动范围具有与所述对接板间隔开的第一距离的周边; 以及主体，其具有间隔开第二距离的第一和第二相对侧，其选择性地联接在所述对接板和所述运动台之间，所述第一距离大于所述第二距离以最小化对接板之间的碰撞概率， 运动台和身体，同时在对接板和运动台之间转移身体。
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公开(公告)号：US20070059902A1
公开(公告)日：2007-03-15
申请号：US11320740
申请日：2005-12-30
申请人： Jae Kim
发明人： Jae Kim
IPC分类号： H01L21/30
CPC分类号： H01L23/544 , B23K26/40 , B23K2103/50 , H01L21/3065 , H01L2223/54406 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device is disclosed, in which a laser marking is formed on a rear surface of a wafer to prevent a Cu layer from being peeled by a protrusion of the laser marking. The method includes forming a laser marking on a rear surface of each wafer, and grinding a protrusion formed by the laser marking.
摘要翻译： 公开了一种用于制造半导体器件的方法，其中在晶片的后表面上形成激光标记以防止Cu层被激光标记的突起剥离。 该方法包括在每个晶片的后表面上形成激光标记，并且研磨由激光标记形成的突起。
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公开(公告)号：US20070059884A1
公开(公告)日：2007-03-15
申请号：US11454594
申请日：2006-06-16
申请人： Jae Kim
发明人： Jae Kim
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L27/11521
摘要： The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by a self-aligned etch process using the nitride film spacers as masks. It is therefore possible to form a uniform recess over the entire wafer. Furthermore, a floating gate is formed on the semiconductor substrate including the recess in a self-aligned manner. Accordingly, a contact area between the floating gate and the semiconductor substrate can be increased as large as a recess surface area.
摘要翻译： 本发明提供一种制造闪速存储器件的方法。 在突出隔离膜的侧壁上形成氮化物膜间隔物。 通过使用氮化物膜间隔物作为掩模的自对准蚀刻工艺在半导体衬底中形成凹部。 因此，可以在整个晶片上形成均匀的凹部。 此外，浮动栅极以自对准的方式形成在包括凹部的半导体衬底上。 因此，浮动栅极和半导体衬底之间的接触面积可以增加到凹陷表面积的大。
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公开(公告)号：US20070058897A1
公开(公告)日：2007-03-15
申请号：US10570907
申请日：2004-09-02
IPC分类号： G02B6/00
CPC分类号： G01D5/35303
摘要： The present invention discloses a fiber Bragg grating sensor system. The system according to the present invention comprises a wavelength tunable laser; a coupler for splitting output light from the wavelength tunable laser into two directions; a reference wavelength generating unit for receiving one directional output light from the coupler and for generating reference wave-lengths and an absolute reference wavelength in order to measure real-time wavelengths of the wavelength tunable laser; a fiber Bragg grating array for receiving the other directional output light from the coupler and for reflecting lights at each of the wave-lengths of the grating therein; a fiber grating wavelength sensing unit for measuring the time when each of the reflected lights from the fiber Bragg grating array is detected; a signal processing unit for figuring wavelength variation information with the use of the measured signals from the reference wavelength generating unit and for obtaining each of wavelengths of the detected lights from the fiber grating wavelength sensing unit; and a laser wavelength control feedback unit for applying AC voltage and DC voltage to the wavelength tunable filter in the wavelength tunable laser. Also, polarization dependency in the sensor system can be removed further installing a depolarizer or a polarization scrambler at the output end of the wavelength tunable laser. By applying the present invention, measurement accuracy of the grating sensor system 20 can be improved due to enhanced wavelength stability and suppression of polarization dependency. Therefore, the fiber Bragg grating sensor system based on the present invention would replace conventional structure/construction diagnosis systems.
摘要翻译： 本发明公开了一种光纤布拉格光栅传感器系统。 根据本发明的系统包括波长可调激光器; 用于将来自波长可调激光器的输出光分成两个方向的耦合器; 参考波长发生单元，用于从耦合器接收一个方向输出光并产生参考波长和绝对参考波长，以便测量波长可调激光器的实时波长; 光纤布拉格光栅阵列，用于接收来自耦合器的其它方向输出光，并用于在其中的光栅的每个波长处反射光; 用于测量来自光纤布拉格光栅阵列的每个反射光的时间的光纤光栅波长感测单元; 信号处理单元，用于利用来自参考波长发生单元的测量信号来计算波长变化信息，并且用于从光纤光栅波长感测单元获得检测到的光的每个波长; 以及激光波长控制反馈单元，用于向波长可调激光器中的波长可调滤波器施加交流电压和直流电压。 此外，传感器系统中的极化依赖性可以被去除在波长可调激光器的输出端进一步安装去偏振器或偏振扰码器。 通过应用本发明，由于增强的波长稳定性和极化依赖性的抑制，可以提高光栅传感器系统20的测量精度。 因此，基于本发明的光纤布拉格光栅传感器系统将取代传统的结构/构造诊断系统。
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57.发明申请Method for controlling data transmission in a wireless network system including a plurality of nodes, sensor network using the same and computer-readable medium having thereon a program performing function embodying the same 审中-公开用于控制包括多个节点的无线网络系统中的数据传输的方法，使用其的传感器网络和其上具有实现相同功能的程序的计算机可读介质公开(公告)号：US20070014268A1
公开(公告)日：2007-01-18
申请号：US11312463
申请日：2005-12-21
IPC分类号： H04Q7/24 , H04L12/413
CPC分类号： H04W74/0816 , H04W4/90 , H04W28/14 , H04W76/50 , Y02D70/142 , Y02D70/22 , Y02D70/26
摘要： The present invention is related to a method for controlling data transmission in a wireless network system including a plurality of nodes. In accordance with the present invention, a duty cycle of a buffer of a node is configured to be adjusted according to a threshold value and a priority of a data to improve energy efficiency according to a variation of a network traffic, guarantee a prioritized transmission of an emergency data, prevent exclusive use of transmission medium by a certain node, and maximize a packet process rate.
摘要翻译： 本发明涉及一种用于在包括多个节点的无线网络系统中控制数据传输的方法。 根据本发明，根据网络流量的变化，节点的缓冲器的占空比被配置为根据阈值和数据的优先级来调整以提高能量效率，保证优先传输 紧急数据，防止特定节点对传输介质的独占使用，并最大化数据包处理速率。
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58.发明申请Method of manufacturing header pipe, header pipe and heat exchanger with header pipe 审中-公开集管，集管和集管的换热器的制造方法公开(公告)号：US20070006460A1
公开(公告)日：2007-01-11
申请号：US11478825
申请日：2006-06-30
申请人： Jae Kim
发明人： Jae Kim
CPC分类号： B23P15/26 , B21D53/02 , F28F9/0207 , Y10T29/49373 , Y10T29/49377
摘要： A method of manufacturing a header pipe for a heat exchanger, including (a) forming a header pipe as a single body with a vertically separating panel between first and second channels, including a plurality of slots through the pipe adapted to connect to cooling fluid tubes of a heat exchanger, (b) introducing a punch into the inside of one of the channels of the header pipe with more than one nipple facing one side of the separating panel, (c) inserting a die into the inside of the other of the channels of the header pipe with punching holes aligned with the punching nipples and the other side of the separating panel, (d) inserting a pressuring pole of a pressuring device through the header pipe slots into the one channel, and (e) moving the pressuring pole to press the punch toward the separating panel to punch more than one hole into the separating panel.
摘要翻译： 一种制造用于热交换器的集管的方法，包括（a）在第一和第二通道之间具有垂直分隔板的单体形成集管，包括通过管的多个槽，适于连接到冷却流体管 的热交换器，（b）将一个冲头引入集管的一个通道的内部，其中多个喷嘴面向分离板的一侧，（c）将模具插入到另一个的另一个的内部 所述集管的通道具有与所述冲压接头和所述分离板的另一侧对准的冲孔，（d）将加压装置的加压杆通过所述总管槽插入所述一个通道中，以及（e） 将冲头朝向分离板压入以将多于一个孔打入分离板。
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公开(公告)号：US20060251912A1
公开(公告)日：2006-11-09
申请号：US11482840
申请日：2006-07-10
CPC分类号： C23C8/02 , C23C10/02 , C23C12/00 , Y10T428/31678
摘要： A MoSi2—Si3N4 composite coating which is coated on a surface of base materials which are molybden, molybden alloy, molybden-coated niobium or molybden-coated niobium alloy and a manufacturing method thereof. The MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a Mo2N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N diffusion layer, or the MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a MoSi2 diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi2 diffusion layer into a Mo5Si3 diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a Mo2N—Si3N4 composite diffusion layer by vapor-depositing of nitrogen on the surface of the Mo5Si3 diffusion layer by the CVD method and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N—Si3N4 composite diffusion layer. The MoSi2—Si3N4 composite coating manufactured by the above method is characterized as a structure in which Si3N4 particles are distributed in a MoSi2 grain boundary of equiaxed grains, thus to improve cyclic oxidation resistance of the base material, improve low-temperature oxidation resistance, and improve mechanical properties of the coating. Therefore, transmission of fine cracks by the thermal stress can be restrained.
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公开(公告)号：US20060205158A1
公开(公告)日：2006-09-14
申请号：US11169892
申请日：2005-06-30
申请人： Jae Kim
发明人： Jae Kim
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/28273
摘要： A method of forming a floating gate electrode in a flash memory device. The method includes forming an isolation film in an inactive region so that a step with a predetermined thickness can be generated between an active region and the inactive region, which are defined in a semiconductor substrate, sequentially forming a tunnel oxide film, a polysilicon film for floating gate electrode and an anti-reflection film on the entire surface in which the isolation film is formed, and then forming photoresist patterns in predetermined regions of the anti-reflection film. The method further includes patterning the anti-reflection film using the photoresist patterns as an etch mask to form a patterned anti-reflection film in which a bottom surface is wider than a top surface and a slope is formed on sidewalls, and pattering the polysilicon film for the floating gate electrode, the tunnel oxide film and a predetermined thickness of the isolation film using the patterned anti-reflection film as an etch mask, thus forming the floating gate electrode having a slope on sidewalls.
摘要翻译： 一种在闪速存储器件中形成浮栅电极的方法。 该方法包括在非活性区域中形成隔离膜，使得可以在半导体衬底中定义的有源区和非活性区之间产生具有预定厚度的步骤，顺序地形成隧道氧化膜，用于 在形成隔离膜的整个表面上形成浮栅电极和抗反射膜，然后在抗反射膜的预定区域中形成光致抗蚀剂图案。 该方法还包括使用光致抗蚀剂图案作为蚀刻掩模来图案化抗反射膜，以形成图案化的抗反射膜，其中底表面比顶表面宽，并且在侧壁上形成斜面，并且图案化多晶硅膜 对于浮栅电极，隧道氧化物膜和使用图案化抗反射膜作为蚀刻掩模的隔离膜的预定厚度，从而形成在侧壁上具有斜率的浮栅。
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