公开(公告)号：US20120270346A1

公开(公告)日：2012-10-25

申请号：US13537340

申请日：2012-06-29

申请人： Ralph H. Johnson ,  James Guenter

发明人： Ralph H. Johnson ,  James Guenter

IPC分类号： H01L33/60

CPC分类号： H01S5/18361 ,  H01L33/0045 ,  H01L33/105 ,  H01S5/0425 ,  H01S5/18344 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3077

摘要： Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

摘要翻译： 制造具有改善的导电性和反射性以及最小吸收的光学器件的方法。 步骤包括形成设计成反射具有峰值和零点的光场的多个反射镜周期。 形成多个次周期的一部分包括形成厚度小于光场四分之一波长的第一层; 在第一层上形成第一组合斜面; 并且在所述组成斜面上形成第二层，所述第二层具有与所述第一层不同的折射率，并且具有使得所述光学场的零点发生在所述第二层内而不在所述组成斜面内的厚度，并且其中形成 第二层还包括在光场的零点的位置处重掺杂第二层。

公开(公告)号：US20120236892A1

公开(公告)日：2012-09-20

申请号：US13423826

申请日：2012-03-19

申请人： Ralph H. Johnson ,  Jerome K. Wade

发明人： Ralph H. Johnson ,  Jerome K. Wade

IPC分类号： H01S5/183 ,  H01L21/02 ,  B82Y99/00

CPC分类号： H01S5/3407 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/34313 ,  H01S5/3436 ,  H01S5/34366 ,  H01S5/34373

摘要： A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.

摘要翻译： 准备VCSEL的方法可以使用MBE来：在第一镜像区域上生长第一导电区域; 在与第一反射镜区域相反的第一导电区域上生长有源区，包括：（a）生长具有In1-xGaxP（As）的量子阱势垒; （b）生长具有GaP，GaAsP或GaAs中的一种或多种的过渡层; （c）生长具有In1-zGazAsyP1-y的量子阱层; （d）生长另一个过渡层具有GaP，GaAsP或GaAs中的一种或多种; （e）在多个循环中重复过程（a）至（d）; 和（f）生长具有In1-xGaxP（As）的量子阱屏障; 在与第一导电区域相反的有源区上生长第二导电区域，其中：x为0.77至0.50; y范围从0.7到1; z范围为0.7〜0.99。

公开(公告)号：US07847310B2

公开(公告)日：2010-12-07

申请号：US12250405

申请日：2008-10-13

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L31/00

CPC分类号： H01L21/02395 ,  B82Y20/00 ,  H01L21/02387 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  H01L33/007 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/2063 ,  H01S5/3201 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2302/00 ,  H01S2304/02

摘要： Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well.

摘要翻译： 公开了半导体激光器，例如具有与含氮量子阱相关的扁平层的活性区域的VCSEL。 MEE（迁移增强外延）用于形成平坦化层，在其上形成量子阱，从而增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。 覆盖层也形成在量子阱上。

公开(公告)号：US07505501B2

公开(公告)日：2009-03-17

申请号：US11559322

申请日：2006-11-13

申请人： Michael Anton Steib ,  Hongyu Deng ,  Ralph H. Johnson

发明人： Michael Anton Steib ,  Hongyu Deng ,  Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： G02B6/4208

摘要： An optoelectronic package having passive optical components that are configured to reduce the amount of optical back reflection that reaches an optoelectronic device housed within the optoelectronic package. In one example, the optoelectronic package includes an optoelectronic device, a wave plate, and a linear polarizer. The optoelectronic device is configured to emit an optical signal along an optical path. The wave plate is positioned in the optical path of the optoelectronic device. The linear polarizer is positioned in the optical path of the optoelectronic device between the optoelectronic device and the wave plate.

摘要翻译： 一种具有无源光学部件的光电子封装，其被配置为减少到达光电封装内容纳的光电器件的光学反射反射量。 在一个示例中，光电封装包括光电子器件，波片和线性偏振器。 光电子器件被配置为沿光路发射光信号。 波片位于光电子器件的光路中。 线性偏振器位于光电器件与波片之间的光电器件的光路中。

公开(公告)号：US20090034571A1

公开(公告)日：2009-02-05

申请号：US12250405

申请日：2008-10-13

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/183 ,  H01S5/026

CPC分类号： H01L21/02395 ,  B82Y20/00 ,  H01L21/02387 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  H01L33/007 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/2063 ,  H01S5/3201 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2302/00 ,  H01S2304/02

摘要： Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well.

摘要翻译： 公开了半导体激光器，例如具有与含氮量子阱相关的扁平层的活性区域的VCSEL。 MEE（迁移增强外延）用于形成平坦化层，在其上形成量子阱，从而增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。 覆盖层也形成在量子阱上。

公开(公告)号：US07257143B2

公开(公告)日：2007-08-14

申请号：US10956798

申请日：2004-10-01

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/18308 ,  H01S5/3201 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2302/00

摘要： Multi-component barrier layers include formation of a GaAs layer and at least one adjacent GaAsN layer. The resulting multi-component barrier layer shape can provide enhanced (extended) offset for capture of holes and enhanced electrons. Other benefits include: a small amount of strain compensation; poorer spatial overlap of higher confined states reducing parasitics at high bias, with some small effect on the lowest confined states. Quantum wells and associated barriers layers can be grown with combinations of gallium, (Ga), arsenic, (As), nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., with wavelengths over 1200 nm. Layers of strained quantum well material can also be supported by mechanical stabilizers.

摘要翻译： 多组分阻挡层包括形成GaAs层和至少一个相邻的GaAsN层。 所得的多组分阻挡层形状可以提供用于捕获空穴和增强电子的增强（扩展）偏移。 其他好处包括：少量应变补偿; 较高限制状态较差的空间重叠减少了高偏倚的寄生效应，对最低限度状态影响较小。 量子阱和相关势垒层可以通过放置在其中的镓（Ga），砷（As），氮（N），铝（Al），锑（Sb），磷（P）和/或铟（In） 或关于典型的GaAs衬底，以实现长波长VCSEL性能，例如，波长超过1200nm。 应变量子阱材料层也可以由机械稳定器支撑。

公开(公告)号：US06858519B2

公开(公告)日：2005-02-22

申请号：US10219425

申请日：2002-08-14

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/183 ,  H01S5/323 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01S5/183 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3235 ,  H01S2301/173 ,  H01S2304/02 ,  Y10S438/962

摘要： Atomic hydrogen flux impinging on the surface of a growing layer of III-V compounds during VCSEL processing can prevent three-dimensional growth and related misfit dislocations. Use of hydrogen during semiconductor processing can allow, for example, more indium in InGaAs quantum wells grown on GaAs. Atomic hydrogen use can also promote good quality growth at lower temperatures, which makes nitrogen incorporated in a non-segregated fashion producing better material. Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range.

摘要翻译： 在VCSEL加工过程中入射在III-V化合物生长层表面的原子氢通量可以防止三维生长和相关失配位错。 在半导体处理期间使用氢可以允许例如在GaAs上生长的InGaAs量子阱中的铟更多。 原子氢使用也可以在较低的温度下促进良好的质量生长，这使得氮以非分离的方式并入，从而产生更好的材料。 可以生长量子阱和相关势垒层以包括放置在典型GaAs衬底内或周围的氮（N），铝（Al），锑（Sb）和/或铟（In），以实现长波长VCSEL性能， 在1260至1650 nm范围内。

公开(公告)号：US06603784B1

公开(公告)日：2003-08-05

申请号：US09217223

申请日：1998-12-21

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/3201 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S2302/00

摘要： In order to achieve a long wavelength, 1.3 micron or above, VCSEL or other semiconductor laser, layers of strained quantum well material are supported by mechanical stabilizers which are nearly lattice matched with the GaAs substrate, or lattice mismatched in the opposite direction from the quantum well material; to allow the use of ordinary deposition materials and procedures. By interspersing thin, unstrained layers of e.g. gallium arsenide in the quantum well between the strained layers of e.g. InGaAs, the GaAs layers act as mechanical stabilizers keeping the InGaAs layers thin enough to prevent lattice relaxation of the InGaAs quantum well material. Through selection of the thickness and width of the mechanical stabilizers and strained quantum well layers in the quantum well, 1.3 micron and above wavelength lasing is achieved with use of high efficiency AlGaAs mirrors and standard gallium arsenide substrates.

摘要翻译： 为了实现长波长，1.3微米或以上，VCSEL或其他半导体激光器，应变量子阱材料层由与GaAs衬底几乎晶格匹配的机械稳定器支持，或者在与量子相反的方向上晶格失配 井材料; 允许使用普通沉积材料和程序。 通过散布例如薄的，无约束的层。 砷化镓在量子阱中的应变层之间。 InGaAs，GaAs层作为机械稳定剂，保持InGaAs层足够薄以防止InGaAs量子阱材料的晶格弛豫。 通过选择量子阱中的机械稳定器和应变量子阱层的厚度和宽度，使用高效率AlGaAs镜和标准砷化镓衬底实现1.3微米及以上波长激光。

公开(公告)号：US5174156A

公开(公告)日：1992-12-29

申请号：US559229

申请日：1990-07-27

申请人： Ralph H. Johnson ,  Ernest F. Brose, II

发明人： Ralph H. Johnson ,  Ernest F. Brose, II

IPC分类号： G01L9/00

CPC分类号： G01L19/147

摘要： A structure and method of making a piezoresistive transducer with reduced offset current. The transducer is comprised of a piezoresistive die having a support rim and a diaphragm, and a support housing having a wall and an aperture. The shape of the diaphragm is matched with the shape of the aperture while the shape of the support rim is matched with the shape of the wall. By matching these shapes, temperature induced stresses are reduced, thus reducing temperature induced offset currents.

摘要翻译： 制造具有减小的偏移电流的压阻式换能器的结构和方法。 传感器包括具有支撑边缘和隔膜的压阻模具，以及具有壁和孔的支撑壳体。 隔膜的形状与孔的形状相匹配，而支撑边缘的形状与壁的形状相匹配。 通过匹配这些形状，降低了温度感应应力，从而降低了温度感应的偏移电流。

公开(公告)号：US5107309A

公开(公告)日：1992-04-21

申请号：US649206

申请日：1991-01-25

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L21/329 ,  H01L21/74

CPC分类号： H01L29/66166 ,  H01L21/743

摘要： A structure and a device which allow low resistance connections to internal circuit devices comprising a double diffused leadout is described. The first leadout diffusion is lightly doped with dopant from either chemical group III or V to constitute N- or P- type material respectively. The lightly doped region has a high resistivity. The second diffusion is diffused, using a dopant from the same chemical group as the first dopant, into the first diffusion. The second diffusion is diffused with enough dopant to constitute N.sup.+ or P.sup.+ material and has a low resistivity. The double diffused leadout creates a low resistance connection to the internal circuitry of an IC device while maintaining breakdown with the protective overlayer.

摘要翻译： 描述了允许与包括双扩散引出件的内部电路装置的低电阻连接的结构和装置。 第一引出扩散部分轻掺杂有来自化学组III或V的掺杂剂，分别构成N-或P-型材料。 轻掺杂区具有高电阻率。 使用与第一掺杂剂相同的化学基团的掺杂剂将第二扩散扩散到第一扩散中。 第二个扩散扩散到足够的掺杂剂以构成N +或P +材料并具有低电阻率。 双扩散引出产生与IC器件的内部电路的低电阻连接，同时保持与保护覆盖层的击穿。