Temperature tuning the wavelength of a semiconductor laser using a variable thermal impedance
    52.
    发明申请
    Temperature tuning the wavelength of a semiconductor laser using a variable thermal impedance 失效
    使用可变热阻抗来调节半导体激光器的波长

    公开(公告)号:US20060083273A1

    公开(公告)日:2006-04-20

    申请号:US11129165

    申请日:2005-05-12

    Applicant: Jan Lipson

    Inventor: Jan Lipson

    CPC classification number: H01S5/02446 H01S5/02453 H01S5/0612 H01S5/06804

    Abstract: An apparatus is described in which the temperature of a semiconductor laser (or other device) can be set to a desired value by using the heat generated by the laser itself in conjunction with an adjustable thermal impedance heat sink to effect the desired temperature rise.

    Abstract translation: 描述了一种装置,其中半导体激光器(或其他装置)的温度可以通过使用由激光器本身产生的热量与可调节的热阻抗散热器相结合而被设定为期望值,以实现期望的温度上升。

    Systems, devices and methods for temperature-based control of laser performance
    53.
    发明申请
    Systems, devices and methods for temperature-based control of laser performance 有权
    用于激光性能温度控制的系统,设备和方法

    公开(公告)号:US20050111501A1

    公开(公告)日:2005-05-26

    申请号:US11022363

    申请日:2004-12-22

    CPC classification number: H01S5/06804 H01S5/06825 H01S5/40

    Abstract: This disclosure concerns systems, methods and devices for temperature-based control of laser performance. One example of a method is performed in connection with a laser of an optoelectronic transceiver. In particular, the laser is operated over a range of temperatures and the optical output of the laser is monitored. During operation of the laser, the bias current and current swing supplied to the laser are adjusted to the extent necessary to maintain a substantially constant optical output from the laser over the range of temperatures.

    Abstract translation: 本公开涉及用于激光性能的基于温度的控制的系统,方法和装置。 结合光电收发器的激光器执行方法的一个示例。 特别地,激光器在一定范围的温度下操作,并且激光器的光学输出被监测。 在激光器的操作期间,提供给激光器的偏置电流和电流摆动被调节到在温度范围内保持来自激光器的基本恒定的光学输出所必需的程度。

    Optoelectronic module with thermally isolated components
    54.
    发明授权
    Optoelectronic module with thermally isolated components 有权
    具有隔热元件的光电模块

    公开(公告)号:US06880983B2

    公开(公告)日:2005-04-19

    申请号:US10101247

    申请日:2002-03-18

    Abstract: A temperature-controlled optoelectronic module that includes a module housing, a laser mount structure for affixing a laser package in the module housing, an optical fiber receptacle structure disposed adjacent to the laser mount structure, a thermal isolator affixed between the laser mount structure and the optical fiber receptacle structure, and a temperature controller coupled to the laser mount structure and operable to regulate temperature of the laser package is disclosed. In the absence of the thermal isolator, a “thermal short” may be created between the module housing and the laser package, substantially reducing the efficiency of the temperature controller. The presence of the thermal isolator eliminates the “thermal short,” substantially increases the effectiveness of the temperature controller and enables the miniaturization of temperature-controlled optoelectronic transceiver modules.

    Abstract translation: 一种温度控制的光电子模块,包括模块壳体,用于将激光器封装固定在模块外壳中的激光器安装结构,邻近激光器安装结构设置的光纤插座结构,固定在激光安装结构和 光纤插座结构以及耦合到激光安装结构并且可操作以调节激光器封装温度的温度控制器被公开。 在没有热隔离器的情况下,可能在模块外壳和激光封装之间产生“热短路”,从而大大降低了温度控制器的效率。 热隔离器的存在消除了“热短路”,大大提高了温度控制器的有效性,并实现了温度控制的光电收发器模块的小型化。

    Extended bandwidth semiconductor optical amplifier systems and methods
    55.
    发明申请
    Extended bandwidth semiconductor optical amplifier systems and methods 审中-公开
    扩展带宽半导体光放大器系统和方法

    公开(公告)号:US20050007658A1

    公开(公告)日:2005-01-13

    申请号:US10902734

    申请日:2004-07-29

    Abstract: Optical devices and associated production methods are disclosed, one example of such a device takes the form of a semiconductor optical amplifier having first and second ends that at least partially define a signal propagation path. The semiconductor optical amplifier has an active layer that includes multiple quantum well stacks disposed between the first and second ends along the signal propagation path. Finally, the multiple quantum well stacks have a thickness and a width that vary along the signal propagation path.

    Abstract translation: 公开了光学器件和相关联的制造方法,这种器件的一个示例采用具有至少部分地限定信号传播路径的第一和第二端的半导体光放大器的形式。 半导体光放大器具有有源层,该有源层包括设置在信号传播路径的第一端和第二端之间的多个量子阱堆叠。 最后,多个量子阱堆叠具有沿信号传播路径变化的厚度和宽度。

    Edge emitting lasers using photonic crystals
    56.
    发明授权
    Edge emitting lasers using photonic crystals 失效
    使用光子晶体的边缘发射激光器

    公开(公告)号:US06744804B2

    公开(公告)日:2004-06-01

    申请号:US10197997

    申请日:2002-07-18

    Abstract: An edge emitting laser that emits a single mode using photonic mirrors. An edge emitting laser includes an active region that is formed between an n-type semiconductor material and a p-type semiconductor material. Photonic mirrors are formed in the laser to define a gain cavity and an external cavity. The gain cavity is bounded by a cleaved facet and a photonic mirror or by a pair of photonic mirrors. The external cavity is bounded by the photonic mirror of the gain cavity and either a cleaved facet or another photonic mirror. The mode emitted by the laser is determined by characteristics of the photonic mirrors, including the periodic cavity structures of the mirrors.

    Abstract translation: 使用光子镜发射单模的边缘发射激光器。 边缘发射激光器包括形成在n型半导体材料和p型半导体材料之间的有源区。 在激光器中形成光子镜以限定增益腔和外部腔。 增益腔由切割小面和光子镜或一对光子镜限定。 外腔由增益腔的光子镜和切割小面或另一个光子镜界定。 激光发射的模式由光子镜的特性决定,包括反射镜的周期性空腔结构。

    High power single mode vertical cavity surface emitting laser
    57.
    发明授权
    High power single mode vertical cavity surface emitting laser 有权
    大功率单模垂直腔表面发射激光器

    公开(公告)号:US06704343B2

    公开(公告)日:2004-03-09

    申请号:US10198229

    申请日:2002-07-18

    CPC classification number: H01S5/183 H01S5/105 H01S2301/163 H01S2301/166

    Abstract: A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with/without DBR layers. The photonic crystal, in one example, forms an external cavity.

    Abstract translation: 使用光子晶体的单模高功率垂直腔面发射激光器(VCSEL)。 光子晶体包括在VCSEL的至少一个镜层中。 光子晶体的反射率取决于光子的波长和入射角。 可以形成光子晶体,使得VCSEL以单一模式发光。 因为产生单个模式,所以可以放大VCSEL的孔径以增加由VCSEL为该模式产生的功率。 光子晶体可以使用/不使用DBR层。 在一个示例中,光子晶体形成外部空腔。

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