公开(公告)号：US08144503B2

公开(公告)日：2012-03-27

申请号：US12457908

申请日：2009-06-25

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

摘要翻译： 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

公开(公告)号：US20120068779A1

公开(公告)日：2012-03-22

申请号：US12929932

申请日：2011-02-25

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC分类号： H03B5/30 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L43/08 ,  H03B15/006

摘要： Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession.

摘要翻译： 提供了振荡器和制造和操作振荡器的方法，振荡器包括钉扎层，自由层和在被钉扎层和自由层之间具有至少一根细丝的阻挡层。 被钉扎层可以具有固定的磁化方向。 对应于钉扎层的自由层。 可以通过在被钉扎层和自由层之间施加电压来形成阻挡层中的至少一个细丝。 振荡器可以通过引起对应于至少一根灯丝的自由层的至少一个区域的磁矩的进动并且检测由于进动而引起的振荡器的电阻变化来操作。

公开(公告)号：US20120056685A1

公开(公告)日：2012-03-08

申请号：US13096627

申请日：2011-04-28

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC分类号： H03B1/00

CPC分类号： H03B15/006 ,  B82Y25/00

摘要： An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.

摘要翻译： 提供了振荡器及其操作方法，振荡器可以包括自由层，自由层的第一表面上的钉扎层和自由层的第二表面上的参考层。 自由层可以具有可变的磁化方向。 被钉扎层可以具有钉扎的磁化方向。 参考层可以具有与被钉扎层的磁化方向不平行的磁化方向。

公开(公告)号：US20120043625A1

公开(公告)日：2012-02-23

申请号：US13317734

申请日：2011-10-27

申请人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

发明人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

IPC分类号： H01L29/78

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/02269 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684

摘要： Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

摘要翻译： 提供场效应晶体管，使用分子束外延制造碳绝缘层的方法和使用其制造场效应晶体管的方法，制造碳绝缘层的方法包括将设置在分子束外延室中的衬底保持在 温度在约300℃至约500℃的范围内，并且在进行外延过程之前将室维持在10-11乇或更小的真空度，并将碳源供应到室以形成碳绝缘层 在基板上。 碳绝缘层由菱形碳和四面体无定形碳形成。

公开(公告)号：US07901586B2

公开(公告)日：2011-03-08

申请号：US11882112

申请日：2007-07-30

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC分类号： B44C1/22 ,  H01L21/302

CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US07719871B2

公开(公告)日：2010-05-18

申请号：US12025372

申请日：2008-02-04

申请人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

发明人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

IPC分类号： G11C5/06

CPC分类号： G11C11/5621 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551

摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

摘要翻译： 提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。 互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。 第一和第二非易失性存储器被布置成使得其上表面相邻。

公开(公告)号：US20090251956A1

公开(公告)日：2009-10-08

申请号：US12385124

申请日：2009-03-31

申请人： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

发明人： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

IPC分类号： G11C11/14 ,  G11C11/416 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

摘要： A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.

摘要翻译： 磁存储器件包括下结构或反铁磁层，钉扎层，信息存储层和形成在下结构或反铁磁层上的自由层。 在操作磁存储器件的方法中，在将自由层的磁化设定为第一磁化方向之后，来自存储信息层的信息被读取或存储。 当第一磁化方向与被钉扎层的磁化方向相反时，存储信息，但是当第一磁化方向与被钉扎层的磁化方向相同时被读取。

公开(公告)号：US20090040883A1

公开(公告)日：2009-02-12

申请号：US12073103

申请日：2008-02-29

申请人： Kwang-seok Kim ,  Sung-chul Lee ,  Sun-ae Seo

发明人： Kwang-seok Kim ,  Sung-chul Lee ,  Sun-ae Seo

IPC分类号： G11B11/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933

摘要： Provided are a magnetic track using magnetic domain wall movement and an information storage device including the same. A magnetic track may comprise a zigzag shaped storage track including a plurality of first magnetic layers in parallel with each other, and stacked separate from each other, and a plurality of second magnetic layers for connecting the plurality of first magnetic layers. The information storage device may include the magnetic track having a plurality of magnetic domains, current applying device connected to the magnetic track, and a read/write device on a middle portion of the magnetic track.

摘要翻译： 提供了使用磁畴壁移动的磁迹和包括该磁迹的信息存储装置。 磁迹可以包括一个之字形存储轨道，该轨道包括彼此平行并彼此分开堆叠的多个第一磁性层，以及用于连接多个第一磁性层的多个第二磁性层。 信息存储装置可以包括具有多个磁畴的磁道，连接到磁道的电流施加装置，以及在磁道的中间部分的读/写装置。

公开(公告)号：US20080212376A1

公开(公告)日：2008-09-04

申请号：US12025372

申请日：2008-02-04

申请人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

发明人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

IPC分类号： G11C16/06 ,  H01L21/336 ,  G11C7/00

CPC分类号： G11C11/5621 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551

摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

摘要翻译： 提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。 互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。 第一和第二非易失性存储器被布置成使得其上表面相邻。

公开(公告)号：US20070247913A1

公开(公告)日：2007-10-25

申请号：US11812574

申请日：2007-06-20

申请人： Yoon-dong Park ,  Sun-ae Seo ,  Choong-rae Cho ,  Won-joo Kim ,  Sang-min Shin

发明人： Yoon-dong Park ,  Sun-ae Seo ,  Choong-rae Cho ,  Won-joo Kim ,  Sang-min Shin

IPC分类号： G11C11/02 ,  H01L21/8244 ,  H01L27/11

CPC分类号： H01L29/7926 ,  H01L29/42332 ,  H01L29/7887 ,  H01L29/7923

摘要： Disclosed are a multi-bit non-volatile memory device, a method of operating the same, and a method of manufacturing the multi-bit non-volatile memory device. A unit cell of the multi-bit non-volatile memory device may be formed on a semiconductor substrate may include: a plurality of channels disposed perpendicularly to the upper surface of the semiconductor substrate; a plurality of storage nodes disposed on opposite sides of the channels perpendicularly the upper surface of the semiconductor substrate; a control gate surrounding upper portions of the channels and the storage nodes, and side surfaces of the storage nodes; and an insulating film formed between the channels and the storage nodes, between the channels and the control gate, and between the storage nodes and the control gate.

摘要翻译： 公开了一种多位非易失性存储器件，其操作方法以及制造该多位非易失性存储器件的方法。 多位非易失性存储器件的单元可以形成在半导体衬底上，可以包括：垂直于半导体衬底的上表面设置的多个通道; 多个存储节点，其设置在所述通道的相对侧，垂直于所述半导体衬底的上表面; 围绕通道和存储节点的上部以及存储节点的侧表面的控制门; 以及形成在通道和存储节点之间，通道和控制栅极之间以及存储节点和控制门之间的绝缘膜。