摘要:
A method is intended to make it possible to drive a PTC electrical load element with a switching unit with the highest possible operational reliability. For this purpose, the electric current is switched off if a predetermined current threshold value is exceeded, the magnitude of the current threshold value being determined from the operating parameters of the load element.
摘要:
Disclosed is for controlling a light source by pulse width modulation of a supply voltage. The supply voltage, or a parameter dependent thereon, is measured and the pulse width is controlled as function of the measured value. The supply voltage or parameter is measured at least twice during the pulse and may be cyclically measured. The pulse width of the current or a subsequent pulse is matched to the recorded value of the supply voltage or the parameter. A total value is generated from all of the measured values and compared with a given value and the pulse width of subsequent pulses are matched as function of the difference between the total value and the given value.
摘要:
Power supply apparatus with overload protection comprising a switch responsive to an input signal for switching between an ON-state for supplying current from a source of power to a load and an OFF-state for interrupting the supply of current to the load, and protection means responsive to an overload condition to switch the switch to the OFF-state. The protection means is responsive to a first overload condition during an initial phase after the switch switches to the ON-state so as to switch the switch back to the OFF-state and maintain the switch in the OFF-state. The protection means is subsequently responsive to a second overload condition if the first overload condition is not detected during the initial phase so as to switch the switch to the OFF-state and subsequently switch the switch back to the ON-state after an interval of time.The protection means is responsive to the current exceeding a first threshold value in detecting the first overload condition, and is responsive to the current exceeding a second threshold value in detecting the second overload condition, the second threshold value being lower than the first threshold value. The protection means is responsive to a temperature of the switch means exceeding a temperature threshold value in detecting at least the first overload condition.
摘要:
A control unit for triggering a plurality of electric loads with a plurality of input signals, wherein the electric loads are triggered by pulse width modulated signals, and the input signals are PWM signals. A method is described with which the control unit triggers a plurality of electric loads with a plurality of input signals. The control unit includes controllable switching provisions, wherein these switching provisions connect at least one load respectively with one of at least two different PWM inputs. A method is described for triggering a plurality of electric loads with the aid of the control unit.
摘要:
A memory includes an array of memory cells and an error correction code circuit. The error correction code circuit is configured to receive a first portion of a first data word from an external circuit and a second portion of the first data word from the array of memory cells, combine the first portion and the second portion to provide the first data word, and encode the first data word for writing to the array of memory cells.
摘要:
One embodiment provides a memory device including a first receiver and a second receiver. The first receiver is configured to receive a single ended clock signal and provide a first clock signal based on the single ended clock signal to provide a memory function. The second receiver is configured to receive a differential clock signal and provide a second clock signal based on the differential clock signal to provide the memory function. Only one of the first receiver and the second receiver is selected to provide the memory function.
摘要:
A memory component includes at least one memory bank array, a first and a second region, a clock tree, and a clock control circuit. The memory component is configured in a semiconductor wafer. The at least one memory bank array is configured such that data is read out of it during a read operation. The clock tree is coupled between the first and second regions and is configured for driving data during the read operation. The clock control circuit is configured within one of the first and second regions and is responsive to read control signals in order to prevent driving the clock tree outside of the read operation.
摘要:
Disclosed is for controlling a light source by pulse width modulation of a supply voltage. The supply voltage, or a parameter dependent thereon, is measured and the pulse width is controlled as function of the measured value. The supply voltage or parameter is measured at least twice during the pulse and may be cyclically measured. The pulse width of the current or a subsequent pulse is matched to the recorded value of the supply voltage or the parameter. A total value is generated from all of the measured values and compared with a given value and the pulse width of subsequent pulses are matched as function of the difference between the total value and the given value.
摘要:
An integrated circuit chip including a first delay circuit and a second delay circuit. The first delay circuit has a first delay circuit topology configured to delay a signal a first delay. The second delay circuit has a second delay circuit topology configured to provide a second delay in a circuit loop that is configured to be monitored and provide an oscillating signal. The second delay circuit topology is substantially the same as the first delay circuit topology and the first delay circuit is configured to be trimmed to adjust the first delay based on the second delay and the oscillating signal.
摘要:
Methods and apparatus that determine, at a device (e.g., a DRAM device), a phase difference between two externally supplied timing signals such as a clock signal (CLK) and a data strobe signal (DQS) are provided. Adjustments may be made to timing of one of the signals itself or other internal memory signals that are, perhaps, utilized in circuits controlled by the DQS signal.