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58 条记录 (耗时 0.056 秒)

    Frequency doubling using spacer mask
    52.
    发明授权
    Frequency doubling using spacer mask 失效
    使用间隔掩模倍频

    公开(公告)号：US07807578B2

    公开(公告)日：2010-10-05

    申请号：US11875250

    申请日：2007-10-19

    申请人： Christopher D. Bencher ,  Keiji Horioka

    发明人： Christopher D. Bencher ,  Keiji Horioka

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3081 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

    摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.

    摘要翻译： 对半导体掩模的制造方法进行说明。 首先提供具有牺牲掩模和间隔掩模的半导体叠层。 牺牲掩模由一系列线组成，并且间隔物掩模具有与该系列线的侧壁相邻的间隔线。 接下来，裁剪间隔掩模。 最后，去除牺牲掩模以提供裁剪的间隔物掩模。 裁剪的间隔掩模将牺牲掩模的一系列线的频率加倍。

    FREQUENCY DOUBLING USING SPACER MASK
    54.
    发明申请
    FREQUENCY DOUBLING USING SPACER MASK 失效
    使用SPACER MASK进行频率双重调整

    公开(公告)号：US20080299776A1

    公开(公告)日：2008-12-04

    申请号：US11875250

    申请日：2007-10-19

    申请人： Christopher D. Bencher ,  Keiji Horioka

    发明人： Christopher D. Bencher ,  Keiji Horioka

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3081 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

    摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.

    摘要翻译： 对半导体掩模的制造方法进行说明。 首先提供具有牺牲掩模和间隔掩模的半导体叠层。 牺牲掩模由一系列线组成，并且间隔物掩模具有与该系列线的侧壁相邻的间隔线。 接下来，裁剪间隔掩模。 最后，去除牺牲掩模以提供裁剪的间隔物掩模。 裁剪的间隔掩模将牺牲掩模的一系列线的频率加倍。

    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
    55.
    发明授权
    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
    用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置

    公开(公告)号：US07316199B2

    公开(公告)日：2008-01-08

    申请号：US10146443

    申请日：2002-05-14

    申请人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Qi Li ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu

    发明人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Qi Li ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/32623 ,  H01J37/3266

    摘要： A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

    摘要翻译： 用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。 磁场发生器具有四个主要的磁线圈部分，用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈部分，以产生磁场 的方向与由主电磁线圈段产生的磁场的方向相反。 在磁场发生器中，相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

    Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
    56.
    发明申请
    Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface 有权
    等离子体反应堆架空电源电极具有低电弧倾向，圆柱形气体出口和成形表面

    公开(公告)号：US20050178748A1

    公开(公告)日：2005-08-18

    申请号：US11046538

    申请日：2005-01-28

    申请人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

    发明人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

    IPC分类号： H01J37/32 ,  B23K9/00

    CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244

    摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

    摘要翻译： 形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。 电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。 电极内的径向气体分布歧管径向延伸穿过电极。 多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。 在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

    Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
    57.
    发明申请
    Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction 有权
    等离子体反应器具有最小的直流线圈，用于尖端，螺线管和镜面场，用于等离子体均匀性和器件损坏降低

    公开(公告)号：US20050167051A1

    公开(公告)日：2005-08-04

    申请号：US11046656

    申请日：2005-01-28

    申请人： Daniel Hoffman ,  Roger Lindley ,  Michael Kutney ,  Martin Salinas ,  Hamid Tavassoli ,  Keiji Horioka ,  Douglas Buchberger

    发明人： Daniel Hoffman ,  Roger Lindley ,  Michael Kutney ,  Martin Salinas ,  Hamid Tavassoli ,  Keiji Horioka ,  Douglas Buchberger

    IPC分类号： H01J37/32 ,  C23F1/00

    CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.

    摘要翻译： 一种用于加工工件的等离子体反应器，包括由侧壁和天花板限定的真空室，以及在所述室中具有工件支撑表面并且面向天花板并且包括阴极电极的工件支撑基座。 RF发生器耦合到阴极电极。 等离子体分布由覆盖工件支撑表面的第一平面中的外部环形内部电磁体控制，覆盖工件支撑表面并且具有比内部电磁体更大的直径的第二平面中的外部环形外部电磁体以及外部环形底部电磁体 在工件支撑表面下方的第三平面内。 内部，外部和底部电磁铁中的相应电源连接到电流源。

    Projectin exposure apparatus
    58.
    发明授权
    Projectin exposure apparatus 失效
    投影仪曝光装置

    公开(公告)号：US5627626A

    公开(公告)日：1997-05-06

    申请号：US468327

    申请日：1995-06-06

    申请人： Soichi Inoue ,  Tadahito Fujisawa ,  Shin-ichi Ito ,  Takashi Sato ,  Shuichi Tamamushi ,  Keiji Horioka

    发明人： Soichi Inoue ,  Tadahito Fujisawa ,  Shin-ichi Ito ,  Takashi Sato ,  Shuichi Tamamushi ,  Keiji Horioka

    IPC分类号： G03F7/20 ,  G03B27/42

    CPC分类号： G03F7/70066 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70241 ,  G03F7/70333

    摘要： A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. A special stop is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source so that intensities of both peripheral and central portions are larger than an intensity of an intermediate portion. In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.TO

    摘要翻译： 投影曝光装置由用于聚焦来自水银灯的光作为光源的第一聚焦光学系统，用于使聚焦光均匀的均匀的光学系统，用于聚焦均匀的光并照射光的第二聚焦光学系统 以及用于将透过该掩模版的光投射到晶片上的投影光学系统。 布置特殊停止点作为均匀照明面罩的次要源。 特殊止挡用于设定次级源的出射平面内的强度分布，使得外周和中心部分的强度大于中间部分的强度。 此外，该装置包括半透明掩模，该半色调掩模允许透光性膜的振幅透射率T和透光性基板的振幅透过率T0满足0.01×D0或= T <= 0.30×YTO。 通过透光性基板的光的相位差由180×（2n + 1）+或-30（度）（n为整数）表示。