摘要:
Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.
摘要:
Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.
摘要:
An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.
摘要:
An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.
摘要:
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要:
An N-Tiered enterprise and/or N-Tiered Web-based enterprise system and methods for managing, monitoring, coordinating the procedures of and optionally controlling a fleet of geosynchronous satellites through a distributed network such as the Internet. The system and associated object oriented software architecture seamlessly supports monitoring and analyzing real-time, near real-time, historical/playback, simulated and archived satellite telemetry as well as Tracking, Telemetry and Control (TT&C) ground system generated data products such as real-time alerts, archived alerts and ground system server statuses from a group of legacy distributed TT&C wide area network (WAN) ground station systems located around the world.
摘要:
Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
摘要:
A method and apparatus for determining the composition of an effluent stream from a vacuum processing chamber. A cell placed in the effluent stream from the vacuum processing chamber creates a glow discharge from the constituents in the effluent stream. An optical detector measures a particular wavelength corresponding to the presence of a particular species. In one embodiment the output from the optical detector is used to determine the endpoint of a chamber cleaning process.
摘要:
A portable PVC resin blending system mounted in a semi-monocoque steel silo having multiple levels therein. The various components of the blending system are mounted within and attached to the silo and lifting lugs on the silo capable of lifting and tilting the silo from a vertical to a horizontal position for transportation and re-erection.
摘要:
A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.