公开(公告)号：US20050227462A1

公开(公告)日：2005-10-13

申请号：US11101870

申请日：2005-04-08

申请人： Yoshio Murakami ,  Toru Yamazaki ,  Yoshiro Aoki ,  Akihiko Endo

发明人： Yoshio Murakami ,  Toru Yamazaki ,  Yoshiro Aoki ,  Akihiko Endo

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/425 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/76243

摘要： A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.

摘要翻译： 一种SOI晶片的制造方法，其特征在于，在炉内对晶片进行热处理，形成包括硅载体，含有氧化物的绝缘层和表面硅层的SOI晶片的步骤， 来自炉的SOI晶片保持在250℃至800℃的温度下，以将SOI晶片转移到含有氢或水的气氛中。 按照该顺序执行步骤。

公开(公告)号：US20050165063A1

公开(公告)日：2005-07-28

申请号：US10516158

申请日：2003-09-05

申请人： Toru Yamazaki ,  Shigeyuki Kikumoto ,  Masahiro Ono ,  Atsushi Saitou ,  Haruka Takahashi ,  Sei Kumakura ,  Kunitaka Hirose ,  Mikiro Yanaka ,  Yoshiyuki Takemura ,  Shigeru Suzuki ,  Ryo Matsui

发明人： Toru Yamazaki ,  Shigeyuki Kikumoto ,  Masahiro Ono ,  Atsushi Saitou ,  Haruka Takahashi ,  Sei Kumakura ,  Kunitaka Hirose ,  Mikiro Yanaka ,  Yoshiyuki Takemura ,  Shigeru Suzuki ,  Ryo Matsui

IPC分类号： A61P19/06 ,  A61P31/12 ,  A61P35/04 ,  C07D233/54 ,  C07D401/12 ,  C07D401/14 ,  C07D403/12 ,  C07D403/14 ,  C07D405/14 ,  C07D417/12 ,  C07D417/14 ,  C07D43/02 ,  A61K31/4172 ,  A61K31/4439

CPC分类号： C07D233/64 ,  C07D401/12 ,  C07D401/14 ,  C07D403/12 ,  C07D403/14 ,  C07D405/14 ,  C07D417/12 ,  C07D417/14

摘要： It is intended to provide novel amine compounds which are efficacious against diseases such as infection with HIV virus, rheumatism and cancer metastasis. Namely, amine compounds represented by the following general formula (1): In a typical case, A1 and A2 represent each an optionally substituted monocyclic or polycyclic aromatic heterocycle; W represents cyclic C3-10 alkylene, an optionally substituted monocyclic or polycyclic aromatic heterocycle, a monocyclic or polycyclic aromatic ring or a partly saturated polycyclic aromatic ring; X represents O, CH2, C(═O) or NR11; and D is a group represented by the following general formula (4) or (6). In the formula (6), Q represents a single bond, S, O or NR12; and Y is a group represented by the following general formula (7). z represents an optionally substituted monocyclic or polycyclic aromatic ring. In the formula (6), B represents NR25R26. In the above formulae, R1 to R26 each represents hydrogen, alkyl, alkenyl or alkynyl.

摘要翻译： 旨在提供对HIV病毒感染，风湿病和癌症转移等疾病有效的新型胺化合物。 即，由以下通式（1）表示的胺化合物：在典型情况下，A1和A2各自表示任选取代的单环或多环芳族杂环; W表示环状C 3-10亚烷基，任选取代的单环或多环芳族杂环，单环或多环芳环或部分饱和多环芳环; X表示O，CH 2，C（-O）或NR 11; D为由以下通式（4）或（6）表示的基团。 在式（6）中，Q表示单键，S，O或NR 12; Y为由以下通式（7）表示的基团。 z表示任选取代的单环或多环芳环。 式（6）中，B表示NR25R26。 在上式中，R 1至R 26各自表示氢，烷基，烯基或炔基。

公开(公告)号：US06807484B2

公开(公告)日：2004-10-19

申请号：US10112595

申请日：2002-03-27

申请人： Akira Inoue ,  Toru Yamazaki ,  Kazuyoshi Azuma

发明人： Akira Inoue ,  Toru Yamazaki ,  Kazuyoshi Azuma

IPC分类号： G01C2134

CPC分类号： G01C21/26

摘要： When there is no continuity between a current position data acquired by the car navigation system and a previous position data acquired by the car navigation system, the car navigation system determines a current position of a vehicle based on position data transmitted from a personal digital assistant (PDA). In this way, the current position of the vehicle can be determined immediately.

摘要翻译： 当由汽车导航系统获取的当前位置数据与由汽车导航系统获取的先前位置数据之间没有连续性时，汽车导航系统基于从个人数字助理发送的位置数据来确定车辆的当前位置（ PDA）。 以这种方式，可以立即确定车辆的当前位置。

公开(公告)号：US06273784B1

公开(公告)日：2001-08-14

申请号：US09207664

申请日：1998-12-09

申请人： Toru Yamazaki ,  Yuzo Rachi

发明人： Toru Yamazaki ,  Yuzo Rachi

IPC分类号： B24B100

CPC分类号： B24B37/04 ,  B24D13/10

摘要： There is provided at least one of a moving device for moving a graining brush in the width direction of aluminum web and a turning device for turning the graining brush so that the graining brush can be placed obliquely against a transporting direction of the aluminum web. By moving the graining brush periodically in the width direction of the aluminum web, the entire graining brush uniformly comes into contact with the aluminum web. By turning the graining brush to place it obliquely against the transporting direction of the aluminum web, the entire graining brush can always come into contact with the aluminum web. Accordingly, the abrasion in the bristles of the graining brush is maintained uniform.

摘要翻译： 提供了用于在铝幅材的宽度方向上移动平纹刷的移动装置中的至少一个以及用于转动所述平纹刷的转向装置，使得所述平纹刷可以相对于铝幅材的传送方向倾斜放置。 通过在铝幅材的宽度方向周期性地移动砂光刷，整个磨光均匀地与铝纤维网接触。 通过转动磨光刷将其倾斜地抵靠铝纤维网的输送方向，整个磨光刷总是能够与铝纤维网接触。 因此，磨光刷的刷毛的磨损保持均匀。

公开(公告)号：US5880516A

公开(公告)日：1999-03-09

申请号：US705857

申请日：1996-08-28

申请人： Toru Yamazaki

发明人： Toru Yamazaki

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/74 ,  H01L29/08 ,  H01L29/732 ,  H01L29/00 ,  H01L21/82 ,  H01L27/102 ,  H01L29/70

CPC分类号： H01L29/66272 ,  H01L29/0826

摘要： A semiconductor device having an epitaxial layer of one conductivity type formed on a semiconductor substrate of the other conductivity type, a base region of the other conductivity type formed on the epitaxial layer to extend from a surface of the epitaxial layer to a predetermined depth, the base region including an intrinsic base region and an external base region, an emitter region of the one conductivity type formed in the intrinsic base region, and a pedestal collector region of the one conductivity type formed in a portion of the epitaxial layer which is immediately under the base region to correspond thereto, wherein the pedestal collector region comprises a plurality of layers of pedestal collector regions which have an impurity concentration that changes in a direction of depth of the substrate and which are sequentially arranged in the direction of depth of the substrate.

摘要翻译： 一种具有一种导电类型的外延层的半导体器件形成在另一导电类型的半导体衬底上，另一导电类型的基极区形成在外延层上以从外延层的表面延伸到预定深度， 包括本征基极区域和外部基极区域的基极区域，形成在本征基极区域中的一种导电类型的发射极区域和形成在外部层的正下方的部分中的一种导电类型的基座集电极区域 所述基底区域与其对应，其中所述基座集电极区域包括具有杂质浓度的基底集电极区域的多个层，所述杂质浓度沿所述基板的深度方向发生变化，并且所述杂质浓度依次布置在所述基板的深度方向上。

公开(公告)号：US5600177A

公开(公告)日：1997-02-04

申请号：US358456

申请日：1994-12-19

申请人： Toru Yamazaki

发明人： Toru Yamazaki

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L29/41 ,  H01L29/73 ,  H01L29/732 ,  H01L29/78 ,  H01L27/082 ,  H01L23/48 ,  H01L27/088 ,  H01L29/76

CPC分类号： H01L29/66272 ,  H01L2924/0002 ,  Y10S257/90

摘要： The upper and lateral surfaces of a polycide electrode comprising a P.sup.+ -type polycrystalline silicon layer 6 and a tungsten silicide layer 13 are covered with silicon nitride films 9, 9A. Reduction of the boron concentration at the interface between the lower polycrystalline silicon layer and the upper tungsten silicide layer is suppressed.

摘要翻译： 包括P +型多晶硅层6和硅化钨层13的多晶硅电极的上表面和侧表面被氮化硅膜9,9A覆盖。 抑制下部多晶硅层与上部硅化钨层之间的界面处的硼浓度的降低。

公开(公告)号：US5516709A

公开(公告)日：1996-05-14

申请号：US346163

申请日：1994-11-21

申请人： Toru Yamazaki

发明人： Toru Yamazaki

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8249 ,  H01L29/08 ,  H01L29/732 ,  H01L21/265

CPC分类号： H01L29/66272 ,  H01L21/8222 ,  H01L21/8249 ,  H01L29/0821 ,  H01L29/7322 ,  Y10S148/01 ,  Y10S148/011 ,  Y10S148/124

摘要： A method of manufacturing a bipolar transistor including the steps of doping an impurity of the one conductivity type in a major surface portion of the semiconductor substrate to form a buried layer of the one conductivity type and growing an epitaxial layer on an entire surface on a major surface of the semiconductor substrate, forming a diffusion region of the opposite conductivity type in an emitter formation region on the major surface of the semiconductor substrate and forming a base connecting region in a base formation region to be in contact with the diffusion region of the opposite conductivity type, forming an insulating interlayer on the major surface of the semiconductor substrate including the diffusion region of the opposite conductivity type and the base connecting region, forming an emitter electrode layer contact hole reaching the diffusion region of the opposite conductivity type in an emitter formation region of the insulating interlayer and forming a collector region hole reaching the epitaxial layer in a collector formation region of the insulating interlayer, depositing a polysilicon film on the insulating interlayer and in the emitter electrode layer contact hole and the collector region hole, forming a patterning mask on the polysilicon film in the emitter formation region, patterning the patterning mask to leave a polysilicon film serving as an emitter electrode layer, and, at the same time, removing the epitaxial layer in the collector formation region by etching to form a collector groove.

摘要翻译： 一种制造双极晶体管的方法，包括以下步骤：在半导体衬底的主表面部分掺杂一种导电类型的杂质，以形成一种导电类型的掩埋层，并在主体的整个表面上生长外延层 在半导体衬底的主表面上的发射体形成区域中形成相反导电类型的扩散区域，并在基底形成区域中形成与相对的扩散区域接触的基极连接区域 导电类型，在包括相反导电类型的扩散区域和基极连接区域的半导体衬底的主表面上形成绝缘中间层，在发射极形成中形成达到相反导电类型的扩散区域的发射极电极层接触孔 绝缘夹层的区域并形成收集器区域 n绝缘层到达绝缘层的集电极形成区域中的外延层，在绝缘中间层和发射极电极层接触孔和集电极区孔中沉积多晶硅膜，在发射极形成中的多晶硅膜上形成图案化掩模 区域，图案化图案掩模以留下用作发射极电极层的多晶硅膜，同时通过蚀刻去除集电极形成区域中的外延层以形成集电槽。

公开(公告)号：US5302841A

公开(公告)日：1994-04-12

申请号：US800063

申请日：1991-11-27

申请人： Toru Yamazaki

发明人： Toru Yamazaki

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/165 ,  H01L29/737 ,  H01L31/072 ,  H01L29/06 ,  H01L31/109

CPC分类号： H01L29/7378

摘要： A Si heterojunction bipolar transistor having a SiGe narrow gap base is disclosed, in which the Ge content in the base region is higher in the neighborhood of the base-emitter junction and also in the neighborhood of the base-collector junction as compared to a central portion of the base region, and also in which the Ge concentration distribution in the base region has a slope toward the central portion from the base-emitter and the base-collector region. The Ge content in the neighborhood of the emitter-base junction can be increased up to 30 to 40%, and the emitter-base junction diffusion potential can be greatly reduced. Further, the average Ge content can be held low owing to the slope of the Ge concentration distribution, thus ensuring freedom from dislocation.

摘要翻译： 公开了具有SiGe窄间隙基极的Si异质结双极晶体管，其中基极区域中的Ge含量在基极 - 发射极结附近以及在基极 - 集电极结附近与中心相比较高 基底区域中的Ge浓度分布与基极 - 发射极和基极 - 集电极区域之间的中心部分具有斜率。 发射极 - 基极结附近的Ge含量可以提高到30至40％，并且可以大大降低发射极 - 基极结扩散电位。 此外，由于Ge浓度分布的斜率，平均Ge含量可以保持较低，因此确保无位错。

公开(公告)号：US4840926A

公开(公告)日：1989-06-20

申请号：US125712

申请日：1987-11-25

申请人： Toshiki Saburi ,  Nobuyuki Ohya ,  Toru Yamazaki ,  Taisei Katoh

发明人： Toshiki Saburi ,  Nobuyuki Ohya ,  Toru Yamazaki ,  Taisei Katoh

IPC分类号： C04B35/00 ,  C04B35/497 ,  H01B3/12

CPC分类号： C04B35/497

摘要： A high frequency wave absorbing ceramics can be used, for example, as an EMI preventive filter for interrupting high frequency waves intruding into electronic circuits. The high frequency wave absorbing ceramics are composed of a ternary composition comprising from 55 to 85 mol % of lead iron niobate Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3, from 10 to 40 mol % of lead iron tungstate Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 and not more than 20 mol % of lead nickel tantalate Pb(Ni.sub.1/3 Ta.sub.2/3)O.sub.3 based on the total 100 mol % of a composition composed of lead iron niobate Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3, lead iron tungstate Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 and lead nickel tantalate Pb(Ni.sub.1/3 Ta.sub.2/3)O.sub.3.

摘要翻译： 高频吸波陶瓷可以用作例如用于中断高频入射到电子电路中的EMI滤波器。 高频吸波陶瓷由含有55〜85mol％的铌酸铅Pb（Fe1 / 2Nb1 / 2）O3，10〜40mol％的钨酸铅铅（Fe2 / 3W1 / 3）的三元组成构成 ）O3和不超过20mol％的铅镍铅Pb（Ni1 / 3Ta2 / 3）O3，基于由铅铌酸铅Pb（Fe1 / 2Nb1 / 2）O3组成的组合物的总计100mol％，钨酸铅铁 Pb（Fe2 / 3W1 / 3）O3和铅镍铅Pb（Ni1 / 3Ta2 / 3）O3。

公开(公告)号：US4742031A

公开(公告)日：1988-05-03

申请号：US837404

申请日：1986-03-07

申请人： Nobuyuki Ohya ,  Toshiki Saburi ,  Toru Yamazaki ,  Taisei Katoh

发明人： Nobuyuki Ohya ,  Toshiki Saburi ,  Toru Yamazaki ,  Taisei Katoh

IPC分类号： C04B35/00 ,  C04B35/497 ,  H01B3/12 ,  H01L23/15 ,  H01L23/552 ,  H01L23/66 ,  H01P1/22 ,  C04B35/26 ,  C01G49/06

CPC分类号： H01L23/15 ,  C04B35/497 ,  H01L23/552 ,  H01L23/66 ,  H01P1/22 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A high frequency wave absorbing ceramics can be used, for example, as an EMI preventive filter for interrupting high frequency waves intruding into electronic circuits. The high frequency wave absorbing ceramics has a composition expressed by the chemical formula Pb{Fe.sub.1/2 Nb.sub.(1/2-x) Ta.sub.x }O.sub.3 where 0.1

摘要翻译： 高频吸波陶瓷可以用作例如用于中断高频入射到电子电路中的EMI滤波器。 高频吸波陶瓷具有由化学式Pb {Fe1 / 2Nb（1/2-x）Tax} O3表示的组成，其中0.1