公开(公告)号：US4840926A

公开(公告)日：1989-06-20

申请号：US125712

申请日：1987-11-25

申请人： Toshiki Saburi ,  Nobuyuki Ohya ,  Toru Yamazaki ,  Taisei Katoh

发明人： Toshiki Saburi ,  Nobuyuki Ohya ,  Toru Yamazaki ,  Taisei Katoh

IPC分类号： C04B35/00 ,  C04B35/497 ,  H01B3/12

CPC分类号： C04B35/497

摘要： A high frequency wave absorbing ceramics can be used, for example, as an EMI preventive filter for interrupting high frequency waves intruding into electronic circuits. The high frequency wave absorbing ceramics are composed of a ternary composition comprising from 55 to 85 mol % of lead iron niobate Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3, from 10 to 40 mol % of lead iron tungstate Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 and not more than 20 mol % of lead nickel tantalate Pb(Ni.sub.1/3 Ta.sub.2/3)O.sub.3 based on the total 100 mol % of a composition composed of lead iron niobate Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3, lead iron tungstate Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 and lead nickel tantalate Pb(Ni.sub.1/3 Ta.sub.2/3)O.sub.3.

摘要翻译： 高频吸波陶瓷可以用作例如用于中断高频入射到电子电路中的EMI滤波器。 高频吸波陶瓷由含有55〜85mol％的铌酸铅Pb（Fe1 / 2Nb1 / 2）O3，10〜40mol％的钨酸铅铅（Fe2 / 3W1 / 3）的三元组成构成 ）O3和不超过20mol％的铅镍铅Pb（Ni1 / 3Ta2 / 3）O3，基于由铅铌酸铅Pb（Fe1 / 2Nb1 / 2）O3组成的组合物的总计100mol％，钨酸铅铁 Pb（Fe2 / 3W1 / 3）O3和铅镍铅Pb（Ni1 / 3Ta2 / 3）O3。

公开(公告)号：US4742031A

公开(公告)日：1988-05-03

申请号：US837404

申请日：1986-03-07

申请人： Nobuyuki Ohya ,  Toshiki Saburi ,  Toru Yamazaki ,  Taisei Katoh

发明人： Nobuyuki Ohya ,  Toshiki Saburi ,  Toru Yamazaki ,  Taisei Katoh

IPC分类号： C04B35/00 ,  C04B35/497 ,  H01B3/12 ,  H01L23/15 ,  H01L23/552 ,  H01L23/66 ,  H01P1/22 ,  C04B35/26 ,  C01G49/06

CPC分类号： H01L23/15 ,  C04B35/497 ,  H01L23/552 ,  H01L23/66 ,  H01P1/22 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A high frequency wave absorbing ceramics can be used, for example, as an EMI preventive filter for interrupting high frequency waves intruding into electronic circuits. The high frequency wave absorbing ceramics has a composition expressed by the chemical formula Pb{Fe.sub.1/2 Nb.sub.(1/2-x) Ta.sub.x }O.sub.3 where 0.1

摘要翻译： 高频吸波陶瓷可以用作例如用于中断高频入射到电子电路中的EMI滤波器。 高频吸波陶瓷具有由化学式Pb {Fe1 / 2Nb（1/2-x）Tax} O3表示的组成，其中0.1

公开(公告)号：US4824812A

公开(公告)日：1989-04-25

申请号：US125713

申请日：1987-11-25

申请人： Toshiki Saburi ,  Nobuyuki Ohya ,  Toru Yamazaki ,  Taisei Katoh

发明人： Toshiki Saburi ,  Nobuyuki Ohya ,  Toru Yamazaki ,  Taisei Katoh

IPC分类号： C04B35/00 ,  C04B35/497 ,  H01B3/12

CPC分类号： C04B35/497

摘要： A high frequency wave absorbing ceramics can be used, for example, as an EMI preventive filter for interrupting high frequency wave intruding into electronic circuits. The high frequency wave absorbing ceramics are composed of a ternary composition comprising from 50 to 82.5 mol % of lead iron niobate Pb(Fe1/2Nb1/2)O.sub.3, from 17.5 to 40 mol % of lead iron tungstate Pb(Fe2/3W1/3)O.sub.3 and not more than 25 mole % of lead cobalt niobate Pb(Co1/3Nb2/3)O.sub.3 based on the total 100 mol % of a composition composed of lead iron niobate Pb(Fe1/2Nb1/2)O.sub.3, lead iron tungstate Pb(Fe2/3W1/3)O.sub.3 and lead cobalt niobate Pb(Co1/3Nb2/3)O.sub.3.

摘要翻译： 可以使用高频吸波陶瓷，例如用作中断高频波侵入电子电路的EMI防止滤波器。 高频吸波陶瓷由含有50〜82.5摩尔％的铌酸铅铅（Fe1 / 2Nb1 / 2）O3，17.5〜40摩尔％的铅铁铅Pb（Fe2 / 3W1 / 3）的三元组成构成 ）O3和不超过25摩尔％的铌酸铅铅（Co1 / 3Nb2 / 3）O3，基于由铌酸铅铅（Fe1 / 2Nb1 / 2）O3组成的组合物的总计100摩尔％，钨酸铅铁 Pb（Fe2 / 3W1 / 3）O3和铌酸铅钴（Co1 / 3Nb2 / 3）O3。

公开(公告)号：US4782310A

公开(公告)日：1988-11-01

申请号：US911999

申请日：1986-09-26

申请人： Toshiki Saburi ,  Nobuyuki Ohya ,  Toru Yamazaki ,  Taisei Katoh

发明人： Toshiki Saburi ,  Nobuyuki Ohya ,  Toru Yamazaki ,  Taisei Katoh

IPC分类号： H04B1/10 ,  H01R13/719 ,  H03H1/00 ,  H03H7/01 ,  H03H7/075 ,  H05K1/02

CPC分类号： H01R13/7195 ,  H01R23/6873 ,  H03H1/0007 ,  H05K1/0231 ,  H05K1/0233 ,  H05K2201/10189 ,  H05K2201/10454 ,  H05K2201/10522 ,  H05K2201/1053

摘要： A high frequency filter assembly for an electric instrument including an internal electric circuit element arranged within a casing of metallic conductive material, and a connector mounted on a peripheral wall of the casing for connecting an external electric circuit to the internal electric circuit element. The filter assembly comprises at least a pair of overlapped insulation thin plates to be arranged between the connector and a connection terminal of the circuit element, and an earth electrode strip disposed between the insulation thin plates and being connected to a portion of the casing. One of the insulation thin plates is integrally provided with a first signal electrode strip which has one end for connection to the connector and is associated with the earth electrode strip to form a first plate condenser, and the other insulation thin plate is integrally provided with a second signal electrode strip which is connected structurally in series with the first signal electrode strip for connection to the connection terminal of the circuit element and associated with the earth electrode strip to form a second plate condenser electrically in parallel connection with the first plate condenser.

摘要翻译： 一种用于电气仪器的高频滤波器组件，包括布置在金属导电材料的壳体内的内部电路元件，以及安装在壳体的周壁上的用于将外部电路连接到内部电路元件的连接器。 所述过滤器组件包括至少一对重叠的绝缘薄板，其布置在所述连接器和所述电路元件的连接端子之间，以及接地电极条，设置在所述绝缘薄板之间并连接到所述壳体的一部分。 一个绝缘薄板一体地设置有第一信号电极带，其具有用于连接到连接器的一端并与接地电极带相关联以形成第一板式冷凝器，另一绝缘薄板一体地设置有 第二信号电极条，其在结构上与第一信号电极条串联连接，用于连接到电路元件的连接端子并与接地电极条相关联，以形成与第一板式冷凝器并联连接的第二板式电容器。

公开(公告)号：US4829030A

公开(公告)日：1989-05-09

申请号：US125711

申请日：1987-11-25

申请人： Nobuyuki Ohya ,  Toshiki Saburi ,  Toru Yamazaki ,  Taisei Katoh

发明人： Nobuyuki Ohya ,  Toshiki Saburi ,  Toru Yamazaki ,  Taisei Katoh

IPC分类号： C04B35/00 ,  C04B35/497 ,  H01B3/12

CPC分类号： C04B35/497

摘要： A high frequency wave absorbing ceramics can be used, for example, as an EMI preventive filter for interrupting high frequency waves intruding into electronic circuits. The high frequency wave absorbing ceramics are composed of a ternary composition comprising from 50 to 80 mol % of lead iron niobate Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3, from 10 to 40 mol % of lead iron tungstate Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 and not more than 40 mol % of lead iron tantalate Pb(Fe.sub.1/2 Ta.sub.1/2)O.sub.3 based on the total 100 mol % of a composition composed of lead iron niobate Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3, lead iron tungstate Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 and lead iron tantalate Pb(Fe.sub.1/2 Ta.sub.1/2)O.sub.3.

摘要翻译： 高频吸波陶瓷可以用作例如用于中断高频入射到电子电路中的EMI滤波器。 高频吸波陶瓷由含有50〜80摩尔％的铌酸铅铅（Fe1 / 2Nb1 / 2）O3，10〜40摩尔％的铅铁铅Pb（Fe2 / 3W1 / 3）的三元组成构成 ）O3和不超过40mol％的铅铁钽酸盐Pb（Fe1 / 2Ta1 / 2）O3，基于由铅铌酸铅Pb（Fe1 / 2Nb1 / 2）O3组成的组合物的总计100mol％，钨酸铅铅 Pb（Fe2 / 3W1 / 3）O3和铅铁钽酸盐（Fe1 / 2Ta1 / 2）O3。

公开(公告)号：US06308567B1

公开(公告)日：2001-10-30

申请号：US09458954

申请日：1999-12-10

申请人： Hirofumi Higuchi ,  Nobuyuki Ohya ,  Tsuyoshi Fukada

发明人： Hirofumi Higuchi ,  Nobuyuki Ohya ,  Tsuyoshi Fukada

IPC分类号： G01P904

CPC分类号： G01C19/56

摘要： A compact angular velocity sensor, which can improve an S/N (signal/noise) ratio. An angular velocity sensor includes an SOI substrate, four oscillatory masses movably supported to the SOI substrate, and four detection electrodes provided outer side of the oscillatory masses for detecting displacements of the oscillatory masses. The oscillatory masses are arranged point-symmetry with respect to a predetermined point K in a flat plane parallel to the SOI substrate. Each of the four oscillatory masses adjacent each other is oscillated in reverse phase in a circumstantial direction about the predetermined point K along the flat plane. When an angular velocity &OHgr; is generated about the predetermined point K, detection weights of the oscillatory masses are displaced along a direction perpendicular to oscillation direction in the flat plane. Capacitance changes between the detection weights and the detection electrodes are processed in a circuit portion so as to output angular velocity detection signal S1 due to Corioli's force with canceling external acceleration and centrifugal force acted to the detection weights of the oscillatory masses.

摘要翻译： 一个紧凑的角速度传感器，可以提高S / N（信号/噪声）比。 角速度传感器包括SOI基板，可移动地支撑到SOI基板的四个振荡块，以及设置在振荡块的外侧的四个检测电极，用于检测振荡质量的位移。 相对于与SOI衬底平行的平面中的预定点K，振荡质量被布置成点对称。 在彼此相邻的四个振荡质量块中的每一个沿着平面在围绕预定点K的环境方向上以相反方向振荡。 当围绕预定点K产生角速度OMEGA时，振荡质量的检测权重沿平面内与振荡方向垂直的方向移位。 在电路部分处理检测权重和检测电极之间的电容变化，以便通过抵消外部加速度和科氏力的角度来输出角速度检测信号S1，该离心力作用于振荡质量的检测重量。

公开(公告)号：US06321598B1

公开(公告)日：2001-11-27

申请号：US09522076

申请日：2000-03-09

申请人： Takao Iwaki ,  Nobuyuki Ohya ,  Hiroaki Ito

发明人： Takao Iwaki ,  Nobuyuki Ohya ,  Hiroaki Ito

IPC分类号： G01C1900

CPC分类号： G01C19/5719

摘要： An angular velocity sensor device includes drive oscillators oscillated by driving in drive direction a0, and detecting oscillators connected to the drive oscillators and oscillated in detecting directions a1, a2 by a Coriolis force, which is generated by an angular velocity in a direction K. The directions a1, a2 respectively make an angle &thgr; with the direction K. Detection electrodes are provided for the detecting oscillators, and produce output signals. A signal caused by an inertia force and a signal caused by the Coriolis force are obtained from the output signals, and the angular velocity is determined by the two signals.

摘要翻译： 角速度传感器装置包括通过沿驱动方向a0驱动而振荡的驱动振荡器，以及检测连接到驱动振荡器并以检测方向a1，a2振荡的科伦里斯力的振荡器，其由方向K上的角速度产生。 方向a1，a2分别与方向K成角度θ。为检测振荡器提供检测电极，并产生输出信号。 由输出信号获得由惯性力和由科里奥利力引起的信号引起的信号，角速度由两个信号决定。

公开(公告)号：US5736770A

公开(公告)日：1998-04-07

申请号：US248002

申请日：1994-05-24

申请人： Akiyoshi Asai ,  Nobuyuki Ohya ,  Mitsutaka Katada

发明人： Akiyoshi Asai ,  Nobuyuki Ohya ,  Mitsutaka Katada

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/52 ,  H01L29/417 ,  H01L29/78 ,  H01L23/48 ,  H01L27/02 ,  H01L29/34

CPC分类号： H01L29/41775 ,  H01L21/76895 ,  H01L21/823871 ,  H01L2924/0002

摘要： A semiconductor device comprising: a semiconductor substrate; a diffused region extending from the surface and to the inside of the semiconductor substrate; a first insulating layer formed on the semiconductor substrate and having a contact hole located through which the diffused region is exposed; a first conductor layer formed on a portion of the first insulating layer and connected so the diffused region through the first contact hole; and an insulator section made of an oxide of the substance of the first conductor layer and formed on another portion of the first insulating layer to surround the first conductor layer.

摘要翻译： 一种半导体器件，包括：半导体衬底; 从半导体衬底的表面延伸到内部的扩散区域; 第一绝缘层，形成在半导体衬底上，并且具有位于该扩散区域被暴露的接触孔; 第一导体层，形成在所述第一绝缘层的一部分上，并且使所述扩散区域穿过所述第一接触孔连接; 以及由所述第一导体层的物质的氧化物构成并形成在所述第一绝缘层的另一部分上以包围所述第一导体层的绝缘体部。

公开(公告)号：US06388300B1

公开(公告)日：2002-05-14

申请号：US09490372

申请日：2000-01-24

申请人： Kazuhiko Kano ,  Junji Ohara ,  Nobuyuki Ohya

发明人： Kazuhiko Kano ,  Junji Ohara ,  Nobuyuki Ohya

IPC分类号： H01L2994

CPC分类号： B81B3/0086 ,  B81B2201/0235 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor, in which a beam-structure having a movable electrode and a fixed electrode confronted with the movable electrode are integrally formed in one substrate, having a new electric isolation structure. A semiconductor physical quantity sensor such as an acceleration sensor includes a silicon substrate; a laterally extending hollow formed in the silicon substrate; and a base plate portion defined below the hollow in the silicon substrate. A rectangular frame portion, a beam-structure having a movable electrode, and a fixed electrode is defined by the hollow and trenches. The fixed electrode confronts with the movable electrodes of the beam-structure. Trenches, in which electrical insulating material is buried, are formed between the movable electrode and the rectangular frame portion and between the fixed electrodes and the rectangular frame portion.

摘要翻译： 一种半导体物理量传感器，其中具有可移动电极的束结构和面对可动电极的固定电极一体地形成在一个基板中，具有新的电隔离结构。 诸如加速度传感器的半导体物理量传感器包括硅衬底; 形成在硅衬底中的横向延伸的中空; 以及限定在硅衬底中的中空部下方的基板部。 由中空和沟槽限定矩形框架部分，具有可移动电极的束结构和固定电极。 固定电极与梁结构的可动电极相对。 在可动电极和矩形框架部分之间以及在固定电极和矩形框架部分之间形成有埋入电绝缘材料的沟槽。

公开(公告)号：US06277756B1

公开(公告)日：2001-08-21

申请号：US09501762

申请日：2000-02-10

申请人： Junji Ohara ,  Shinji Yoshihara ,  Kazuhiko Kano ,  Nobuyuki Ohya

发明人： Junji Ohara ,  Shinji Yoshihara ,  Kazuhiko Kano ,  Nobuyuki Ohya

IPC分类号： H01L21311

CPC分类号： G01P15/0802 ,  B81B2203/033 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/30655 ,  H01L21/762

摘要： A method of manufacturing a semiconductor device, which can effectively form a trench having a high aspect ratio with relatively simple steps. An initial trench is formed in a silicon substrate by a reactive ion etching using an oxide film mask as an etching mask. After forming a protection oxide film on an inside surface of the trench, a part of the protection oxide film at which positions at a bottom surface of the trench is removed by a reactive ion etching, so that an etching of the silicon substrate is advanced through the bottom surface of the trench. Furthermore, the step for forming the protection oxide film and the step for re-etching the bottom surface of the trench are repeatedly performed, so that a depth of the trench becomes a predetermined depth. These steps are performed in a common chamber by using plasma processed with switching gases to be introduced to the chamber.

摘要翻译： 一种制造半导体器件的方法，其可以通过相对简单的步骤有效地形成具有高纵横比的沟槽。 通过使用氧化物膜掩模作为蚀刻掩模的反应离子蚀刻在硅衬底中形成初始沟槽。 在沟槽的内表面上形成保护氧化膜之后，通过反应离子蚀刻去除沟槽底面的位置的保护氧化膜的一部分，使得硅衬底的蚀刻通过 沟槽的底面。 此外，重复执行用于形成保护氧化膜的步骤和重新蚀刻沟槽的底表面的步骤，使得沟槽的深度变为预定深度。 这些步骤通过使用等离子体处理的切换气体被引入腔室在公共室中进行。