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68 条记录 (耗时 0.07 秒)

    Patterning method and methods for producing electro-optic device, color filter, illuminant, and thin-film transistor
    53.
    发明授权
    Patterning method and methods for producing electro-optic device, color filter, illuminant, and thin-film transistor 失效
    用于制造电光器件，滤色器，发光体和薄膜晶体管的图案化方法和方法

    公开(公告)号：US07604928B2

    公开(公告)日：2009-10-20

    申请号：US11566488

    申请日：2006-12-04

    申请人： Osamu Iketa ,  Nobuo Kawase ,  Keishi Saito ,  Takeo Ono

    发明人： Osamu Iketa ,  Nobuo Kawase ,  Keishi Saito ,  Takeo Ono

    IPC分类号： G03F7/26

    CPC分类号： G03F7/167 ,  G02B5/201 ,  G03F7/0007 ,  G03F7/40 ,  H01L51/0005

    摘要： A patterning method forms a pattern including a lyophilic region and a lyophobic region. The method includes treating the surface of an object by exposing an atmosphere containing at least one gas selected from the group consisting of hydrogen, deuterium, deuterated hydrogen, and tritium; partially exposing the treated surface to light to form an exposed region and an unexposed region; and applying a liquid onto one of the exposed region and the unexposed region.

    摘要翻译： 图案化方法形成包括亲液性区域和疏液区域的图案。 该方法包括通过暴露含有选自氢，氘，氘化氢和氚的至少一种气体的气氛来处理物体的表面; 将经处理的表面部分地曝光以形成曝光区域和未曝光区域; 以及将液体施加到所述暴露区域和未曝光区域中的一个上。

    ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    55.
    发明申请
    ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    有机电致发光显示装置及其制造方法

    公开(公告)号：US20070046191A1

    公开(公告)日：2007-03-01

    申请号：US11464106

    申请日：2006-08-11

    申请人： Keishi Saito

    发明人： Keishi Saito

    IPC分类号： H05B33/00

    CPC分类号： H01L27/1248 ,  H01L27/3244

    摘要： The present invention provides an organic EL display device having a planarizing layer, which is prevented from being distorted. The above organic EL display device has a planarizing layer, which retains 5% or less the oligomer used to form this layer.

    摘要翻译： 本发明提供一种具有平坦化层的有机EL显示装置，防止其变形。 上述有机EL显示装置具有将形成该层的低聚物保持5％以下的平坦化层。

    Method for manufacturing photovoltaic element
    57.
    发明授权
    Method for manufacturing photovoltaic element 失效
    制造光伏元件的方法

    公开(公告)号：US06379994B1

    公开(公告)日：2002-04-30

    申请号：US08719259

    申请日：1996-09-24

    申请人： Masafumi Sano ,  Keishi Saito

    发明人： Masafumi Sano ,  Keishi Saito

    IPC分类号： H01L2100

    CPC分类号： H01L31/1876 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02P70/521

    摘要： Disclosed is a method for manufacturing a photovoltaic element wherein a pin-structure formed by laminating n-, i- and p-type semiconductor layers, each of which contains silicon atoms and has a non-monocrystalline crystal structure is formed at least one or more times on a substrate, the method comprising steps of forming each of the semiconductor layers and annealing the surface of at least one of the semiconductor layers or the substrate in an atmosphere of hydrogen gas, helium gas or argon gas that contains 1 to 1000 ppm of oxygen atom containing gas.

    摘要翻译： 公开了一种光电元件的制造方法，其特征在于，通过层叠n，i，p型半导体层，其中含有硅原子并具有非单晶晶体结构的pin结构形成至少一个以上 时间，该方法包括以下步骤：在氢气，氦气或氩气的气氛中形成每个半导体层并退火至少一个半导体层或衬底的表面，所述氢气，氦气或氩气含有1至1000ppm 含氧原子的气体。

    Light receiving member for electrophotography
    58.
    发明授权
    Light receiving member for electrophotography 失效
    光电接收元件

    公开(公告)号：US06365308B1

    公开(公告)日：2002-04-02

    申请号：US08967208

    申请日：1997-10-29

    申请人： Satoshi Kojima ,  Keishi Saito ,  Hirokazu Ohtoshi ,  Masafumi Sano ,  Junichiro Hashizume ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Masahiko Tonogaki

    发明人： Satoshi Kojima ,  Keishi Saito ,  Hirokazu Ohtoshi ,  Masafumi Sano ,  Junichiro Hashizume ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Masahiko Tonogaki

    IPC分类号： G03G5043

    CPC分类号： G03G5/08285 ,  G03G5/0433 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/14704

    摘要： In order to maintain excellent electrical, optical and photoconductive characteristics and to significantly improve the durability under adverse environments, a light receiving member for electrophotography according to the present invention comprises in sequence: a supporting member and a light receiving layer; said light receiving layer comprising in sequence at least a photoconductive layer and a surface layer thereon, said photoconductive layer comprising a non-single-crystal material containing silicon atoms as a matrix, and said surface layer comprising an amorphous material containing silicon atoms and carbon atoms as a matrix, wherein the carbon atoms are at least diamond-bonded and graphite-bonded, and wherein from 2% to 30% by number of the carbon atoms are graphite-bonded.

    摘要翻译： 为了保持优异的电气，光学和光导特性并显着改善不利环境下的耐久性，根据本发明的用于电子照相的光接收元件依次包括支撑元件和光接收层; 所述光接收层依次包括至少一个光电导层和其上的表面层，所述光电导层包括含有硅原子作为基质的非单晶材料，所述表面层包含含有硅原子和碳原子的无定形材料 作为基质，其中碳原子至少是金刚石键合和石墨键合的，并且其中2〜30％的碳原子是石墨键合的。

    Semiconductor element having microcrystalline semiconductor material
    59.
    发明授权
    Semiconductor element having microcrystalline semiconductor material 有权
    具有微晶半导体材料的半导体元件

    公开(公告)号：US06303945B1

    公开(公告)日：2001-10-16

    申请号：US09266829

    申请日：1999-03-12

    申请人： Keishi Saito ,  Masafumi Sano

    发明人： Keishi Saito ,  Masafumi Sano

    IPC分类号： H01L2904

    CPC分类号： H01L31/076 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/056 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.

    摘要翻译： 在包含微晶半导体的半导体元件中，在微晶晶粒内提供半导体结。 此外，在包含微晶半导体的半导体元件中，作为混合物提供不同晶粒直径的微晶粒以形成半导体层。 因此，半导体结的不连续性减小，从而提高半导体元件的特性，耐久性和耐热性。 半导体层的失真也减少了。

    Photoelectric conversion element having a surface member or a protection member and building material using the same
    60.
    发明授权
    Photoelectric conversion element having a surface member or a protection member and building material using the same 失效
    具有表面构件或保护构件的光电转换元件和使用其的建筑材料

    公开(公告)号：US06153823A

    公开(公告)日：2000-11-28

    申请号：US37825

    申请日：1998-03-11

    申请人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

    发明人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

    IPC分类号： H01L31/04 ,  H01L31/048 ,  H01L31/076 ,  H01L31/20 ,  H02J7/35 ,  H01L25/00

    CPC分类号： H02J7/35 ,  B32B17/04 ,  B32B17/10788 ,  H01L31/048 ,  H01L31/076 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/548 ,  Y10S136/293

    摘要： A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

    摘要翻译： 提供一种光电转换元件，其包括基板，形成在基板上的非单晶半导体的多个半导体结以及覆盖半导体结的表面材料。 半导体结具有彼此不同的各自的吸收光谱，并且各自的光劣化率彼此不同。 当没有表面材料存在时，由劣化率最小的半导体结产生的光电流大于具有最大劣化率的半导体结的光电流，并且当存在时，表面材料在相当于一部分的范围内吸收光 具有最小劣化率的半导体结的吸收光谱，使得由劣化率最小的半导体结产生的光电流变得小于具有最大劣化率的半导体结的光电流。