公开(公告)号：USRE43450E1

公开(公告)日：2012-06-05

申请号：US10678139

申请日：2003-10-06

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/225 ,  H01L21/324 ,  H01L21/336 ,  C30B1/02 ,  C30B31/02 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L29/78675

摘要： An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.

摘要翻译： 本发明的一个目的是提供一种通过使用镍结晶的还原硅膜中的镍元素的技术。 将非常少量的镍引入形成在玻璃基板上的非晶硅膜中。 然后通过加热使非晶硅膜结晶。 此时，镍元素残留在结晶硅膜中。 然后在镍的作用下，在硅膜的表面上形成非晶硅膜。 然后将非晶硅膜进一步热处理。 通过进行这种热处理，镍元素从结晶硅膜分散到非晶硅膜中，结果是结晶硅膜中的镍密度降低。

公开(公告)号：US20110262117A1

公开(公告)日：2011-10-27

申请号：US13174924

申请日：2011-07-01

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Yasuyuki Arai

IPC分类号： F27D11/12

CPC分类号： H01L21/67109 ,  C30B33/00

摘要： An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed. A portion of the circulating gas may be expelled, and can be utilized as a heat source in order to preheat a newly introduced gas.

摘要翻译： 本发明的目的是提供一种激活添加到半导体膜中的杂质元素的方法，以及在使用具有低耐热性的基板（例如玻璃）制造半导体器件的过程中，而不改变形状 基板，通过使用短时间的热处理工艺。 另一个目的是提供一种使这种类型的热处理过程成为可能的热处理设备。 用于从反应室的上游侧供给气体的单元，用于加热反应室上游侧的气体的单元，在反应室的下游侧保持被处理基板的单元， 准备将气体从反应室的下游侧向上游侧循环的单元。 用于加热气体的电力量可以通过循环用于加热被处理基板的气体来节约。 循环气体的一部分可以被排出，并且可以用作热源以便预热新引入的气体。

公开(公告)号：US07974524B2

公开(公告)日：2011-07-05

申请号：US11511929

申请日：2006-08-29

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Yasuyuki Arai

IPC分类号： A45D20/40 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C30B33/00

摘要： An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed. A portion of the circulating gas may be expelled, and can be utilized as a heat source in order to preheat a newly introduced gas.

摘要翻译： 本发明的目的是提供一种激活添加到半导体膜中的杂质元素的方法，以及在使用具有低耐热性的基板（例如玻璃）制造半导体器件的过程中，而不改变形状 基板，通过使用短时间的热处理工艺。 另一个目的是提供一种使这种类型的热处理过程成为可能的热处理设备。 用于从反应室的上游侧供给气体的单元，用于加热反应室上游侧的气体的单元，在反应室的下游侧保持被处理基板的单元， 准备将气体从反应室的下游侧向上游侧循环的单元。 用于加热气体的电力量可以通过循环用于加热被处理基板的气体来节约。 循环气体的一部分可以被排出，并且可以用作热源以便预热新引入的气体。

公开(公告)号：US07932589B2

公开(公告)日：2011-04-26

申请号：US12219382

申请日：2008-07-21

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato ,  Takaaki Koen ,  Yuto Yakubo ,  Makoto Yanagisawa ,  Hisashi Ohtani ,  Eiji Sugiyama ,  Nozomi Horikoshi

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato ,  Takaaki Koen ,  Yuto Yakubo ,  Makoto Yanagisawa ,  Hisashi Ohtani ,  Eiji Sugiyama ,  Nozomi Horikoshi

IPC分类号： H01L23/06

CPC分类号： G06K19/07735 ,  G06K19/07722 ,  G06K19/07794 ,  H01L23/295 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.

摘要翻译： 一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。 半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。 在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。 其中一个结构体设置在片上天线和增强天线之间。 在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

公开(公告)号：US07679087B2

公开(公告)日：2010-03-16

申请号：US10214691

申请日：2002-08-09

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L29/04 ,  H01L31/0392

CPC分类号： H01L21/02672 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.

摘要翻译： 公开了一种制造具有优异特性的薄膜晶体管的方法。 镍元素与非晶硅膜的选定区域保持接触。 然后，进行热处理以使非晶膜结晶。 随后，在包含卤素元素的氧化环境中进行热处理以形成热氧化膜。 此时，结晶度提高。 此外，镍元素的吸收进行。 该晶体硅膜由从多个点径向生长的晶体组成。 因此，可以获得具有优异特性的薄膜晶体管。

公开(公告)号：US07635861B2

公开(公告)日：2009-12-22

申请号：US11275850

申请日：2006-01-31

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Takeshi Fukunaga

IPC分类号： H01L21/00

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1277 ,  H01L29/78696

摘要： A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.

摘要翻译： 具有CMOS结构的半导体器件，其中在制造CMOS电路时，在形成栅极绝缘膜之前添加赋予P沟道型半导体器件的有源层p型导电性的杂质元素。 然后，通过对有源层进行热氧化处理，对杂质元素进行再分配，使有源层主表面的杂质元素的浓度最小化。 阈值电压的精确控制由痕量存在的杂质元素使能。

公开(公告)号：US20090231533A1

公开(公告)日：2009-09-17

申请号：US12473703

申请日：2009-05-28

申请人： Jun Koyama ,  Hisashi Ohtani ,  Yasushi Ogata ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Hisashi Ohtani ,  Yasushi Ogata ,  Shunpei Yamazaki

IPC分类号： G02F1/1345 ,  H05K1/11

CPC分类号： G02F1/13454 ,  G02F1/136227 ,  H01L27/124

摘要： A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively without increasing the number of manufacturing steps.

摘要翻译： 布线通过多个接触孔与辅助布线并联电连接。 接触孔通过绝缘膜形成并且布置在与布线的垂直方向上。 由于辅助布线形成在与构成TFT的电极相同的层中，所以可以有效地降低布线的电阻而不增加制造步骤的数量。

公开(公告)号：US07553716B2

公开(公告)日：2009-06-30

申请号：US11322653

申请日：2006-01-03

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/31662 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757

摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.

公开(公告)号：US20090001896A1

公开(公告)日：2009-01-01

申请号：US12055432

申请日：2008-03-26

申请人： Shunpei Yamazaki ,  Masakazu Murakami ,  Naomi Kawakami ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Masakazu Murakami ,  Naomi Kawakami ,  Hisashi Ohtani

IPC分类号： G09G3/30

CPC分类号： H01L27/3244 ,  H01L51/001 ,  H01L51/0037 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/5315

摘要： The inventors has been anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on the EL layer because the TFT is disposed blow the ET layer in the active matrix light-emitting device. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, little damage was observed on the EL layer, but significant damages were found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF to current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT.

摘要翻译： 本发明人已经预期使用电子枪沉积作为在EL层上形成金属层的方法是没有问题的，因为TFT被置于有源矩阵发光器件中吹扫ET层。 然而，由于TFT对电离蒸发颗粒非常敏感，所以由电子枪产生的二次电子，反射电子等在EL层上观察到很小的损伤，但是当电子枪 使用沉积。 本发明提供一种具有优异的TFT特性（导通电流，截止电流，Vth，S值等）的有源矩阵发光器件，其中形成有机化合物层和金属层（阴极或阳极） 通过对TFT具有最小影响的电阻加热。

公开(公告)号：US20080308830A1

公开(公告)日：2008-12-18

申请号：US12179615

申请日：2008-07-25

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L33/00

CPC分类号： H01L27/3244 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2029/7863 ,  H01L2251/5315

摘要： An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel forming region become longer. The first impurity region is formed to be overlapped with a side wall. A gate overlapping structure can be realized with the side wall functioning as an electrode.

摘要翻译： NTFT的有源层包括沟道形成区，至少第一杂质区，至少第二杂质区和至少第三杂质区。 随着与沟道形成区域的距离变长，第一，第二和第三杂质区域中的杂质浓度增加。 第一杂质区形成为与侧壁重叠。 可以通过侧壁起电极的作用来实现栅极重叠结构。