公开(公告)号：US20100190723A1

公开(公告)日：2010-07-29

申请号：US12532765

申请日：2008-03-19

申请人： Hiroo Sanada ,  Kenji Sato ,  Shin Ono ,  Yoshio Suzuki

发明人： Hiroo Sanada ,  Kenji Sato ,  Shin Ono ,  Yoshio Suzuki

IPC分类号： A61K38/06 ,  C07K5/08 ,  A61P1/16

CPC分类号： C07K5/0825 ,  A21D2/245 ,  A23L23/00 ,  A23L33/18 ,  A61K38/00 ,  C07K5/06173 ,  C07K5/1024

摘要： This invention provides a composition having preventive and/or therapeutic effects on liver disease, which is highly effective, free of side effects, easily ingestible, and capable of long-term ingestion from the viewpoint of a cost and safety. This invention relates to a peptide having the amino acid sequence represented by the following formula: pyroGlu-(X)n-A, wherein X is the same or different and represents Gln or Asn; A represents Gln, Asn, Leu, Ile, or Val; and n is an integer from 0 to 2 or a salt thereof.

摘要翻译： 本发明提供一种具有预防和/或治疗对肝脏疾病的作用的组合物，其从成本和安全性的观点来看，其高度有效，无副作用，容易摄取，并且能够长期摄取。 本发明涉及具有下式表示的氨基酸序列的肽：pyroGlu-（X）n-A，其中X相同或不同，表示Gln或Asn; A代表Gln，Asn，Leu，Ile或Val; n为0〜2的整数或其盐。

公开(公告)号：US07696073B2

公开(公告)日：2010-04-13

申请号：US11984943

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/38 ,  H01L29/22 ,  H01L31/0296

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

摘要翻译： 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比更小的掺杂量的所需载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US07629625B2

公开(公告)日：2009-12-08

申请号：US11984944

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/00

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

摘要翻译： 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US20090273861A1

公开(公告)日：2009-11-05

申请号：US12272461

申请日：2008-11-17

申请人： Tsutomu Tanaka ,  Kenji Sato

发明人： Tsutomu Tanaka ,  Kenji Sato

IPC分类号： G11B5/54 ,  B05D5/12 ,  G11B5/62

CPC分类号： G11B5/855 ,  G11B5/65 ,  G11B5/7325

摘要： A magnetic recording medium includes a substrate; and a recording film formed on the substrate and including a main magnetic film, the main magnetic film where a recording area and a guard area are formed by local ion doping, the guard area having saturation magnetization smaller than saturation magnetization of the recording area. A primary layer is provided at a substrate side of the main magnetic film. A main ingredient of the primary layer is at least one kind of atom selected from a group consisting of Cr, B, Mo, Al, Si, and C.

摘要翻译： 磁记录介质包括基板; 以及形成在基板上并且包括主磁性膜的记录膜，主磁膜通过局部离子掺杂形成记录区域和保护区域，该保护区域的饱和磁化强度小于记录区域的饱和磁化强度。 主层设置在主磁性膜的基板侧。 主层的主要成分是选自Cr，B，Mo，Al，Si和C中的至少一种原子。

公开(公告)号：US20090104765A1

公开(公告)日：2009-04-23

申请号：US12337023

申请日：2008-12-17

申请人： Nobuyoshi TAKAHASHI ,  Fumihiko Noro ,  Kenji Sato

发明人： Nobuyoshi TAKAHASHI ,  Fumihiko Noro ,  Kenji Sato

IPC分类号： H01L21/768

CPC分类号： H01L27/11568 ,  H01L27/115

摘要： A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.

摘要翻译： 半导体器件包括：半导体区域; 多个位线扩散层，其形成在所述半导体区域的上部，并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线，各自在列方向上形成在半导体区域上，并且与字线绝缘膜和栅极绝缘膜交叉。 存储单元形成在栅极绝缘膜和字线的交点处。 包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部，并且连接部分的上表面的电平低于连接扩散部的上表面的高度 半导体区域中的层。

公开(公告)号：US20090079239A1

公开(公告)日：2009-03-26

申请号：US12289205

申请日：2008-10-22

申请人： Shigeru Endo ,  Kenji Sato ,  Harutomi Nishide ,  Tatsuya Yamazaki ,  Naotaka Kumakiri ,  Mikihito Kojima ,  Masashi Yoshifuku ,  Takashi Furukawa

发明人： Shigeru Endo ,  Kenji Sato ,  Harutomi Nishide ,  Tatsuya Yamazaki ,  Naotaka Kumakiri ,  Mikihito Kojima ,  Masashi Yoshifuku ,  Takashi Furukawa

IPC分类号： A47C31/00

CPC分类号： B60N2/002 ,  B60N2/06 ,  B60N2/4263

摘要： There is disclosed a passenger's weight measurement device for a vehicle seat, capable of suppressing generation of an initial load. The passenger's weight measurement device includes an upper rail disposed to be movable back and forth on a lower rail fixed to a vehicle floor; a load sensor fixed on the upper rail; and a frame disposed on the load sensor and below a vehicle seat, wherein a rod extends from the load sensor to penetrate the frame and to be inserted into an insertion hole formed in a center of a leaf spring, the leaf spring is curved into an angle shape to separate the center of the leaf spring from the frame, a nut is engaged with the rod on the leaf spring, and both hems of the leaf spring abut on the frame in a state that the leaf spring is fastened by the nut.

摘要翻译： 公开了一种能够抑制初始载荷的产生的车辆座椅的乘客重量测量装置。 乘客的体重测量装置包括：上轨道，其设置成可在固定到车辆地板的下轨道上来回移动; 固定在上轨道上的负载传感器; 以及设置在所述负载传感器上并位于车辆座椅下方的框架，其中杆从所述负载传感器延伸穿过所述框架并且被插入到形成在板簧中心的插入孔中，所述板簧被弯曲成 角形形状以将板簧的中心与框架分离，螺母与板簧上的杆接合，并且片簧的两个弯曲部都以板簧紧固在框架上的方式抵靠在框架上。

公开(公告)号：US07495832B2

公开(公告)日：2009-02-24

申请号：US10539290

申请日：2003-12-15

申请人： Kenji Sato

发明人： Kenji Sato

IPC分类号： G02B5/28

CPC分类号： G02B6/4206 ,  G02B5/284 ,  G02B6/29358 ,  G02B6/29362 ,  G02B6/29394 ,  H01S5/028 ,  H01S5/12 ,  H01S5/1215 ,  H01S5/50 ,  H04B10/25133

摘要： A light dispersion filter is composed of three or more optically transparent layers each having a value equal to the value of the product of the refractive index and thickness of the optically transparent layer and transmitted light, and a plurality of partially reflective layers arranged alternately with the optically transparent layers and having predetermined reflectivities. Alternatively, a light dispersion filter has a plurality of etalon resonators which are arranged in series such that the value of the product of the refractive index of air and the interval of the etalon resonators is equal to the value of the product of the refractive index and thickness of the optically transparent layers.

摘要翻译： 光散射滤光器由三个或更多个光学透明层组成，每个光学透明层的值等于光透明层和透射光的折射率和厚度乘积的值，以及多个部分反射层与 光学透明层并具有预定的反射率。 或者，光散射滤光器具有多个标准具共振器，其串联布置，使得空气的折射率与标准具谐振器的间隔的乘积的值等于折射率和 光学透明层的厚度。

公开(公告)号：US07490892B2

公开(公告)日：2009-02-17

申请号：US12149711

申请日：2008-05-07

申请人： Kenji Sato

发明人： Kenji Sato

IPC分类号： B62D21/03

CPC分类号： B62D25/2054

摘要： A vehicle deck structure that can suppress deformation of a deck floor is provided. The vehicle deck structure includes a deck floor extending in a vehicle body front-rear direction and a vehicle width direction, a cross member having a longitudinal direction that corresponds to the vehicle width direction and provided at a lower side of the deck floor, a mount lower surface reinforcement that closes off a downward open end of the cross member to form a closed cross-section portion Sc, a collar that is provided within the closed cross-section portion Sc and supports a fastening load for fastening the deck floor to a chassis frame F, and a rear cross reinforcement that is provided at a front side or a rear side in the vehicle body front-rear direction with respect to an installation portion of the collar at the deck floor. The rear cross reinforcement includes an upper wall joined with the deck floor, a lower wall fixed at a front flange of the mount lower surface reinforcement, and an upright wall connecting the upper wall and the lower wall.

摘要翻译： 提供了能够抑制甲板地板的变形的车辆甲板结构。 车辆甲板结构包括在车体前后方向和车宽方向上延伸的甲板楼板，具有与车宽方向对应的纵向方向并设置在甲板楼板的下侧的横梁，安装件 下表面加强件，其封闭横向构件的向下开口端，以形成封闭的横截面部分Sc，该套环设置在封闭的横截面部分Sc内，并支撑用于将甲板底板紧固到底盘的紧固载荷 框架F和相对于甲板底板上的轴环的安装部分设置在车身前后方向的前侧或后侧的后横梁加强件。 后横梁加强件包括与甲板底板连接的上壁，固定在安装下表面加强件的前凸缘处的下壁和连接上壁和下壁的直立壁。

公开(公告)号：US07476943B2

公开(公告)日：2009-01-13

申请号：US11405451

申请日：2006-04-18

申请人： Nobuyoshi Takahashi ,  Fumihiko Noro ,  Kenji Sato

发明人： Nobuyoshi Takahashi ,  Fumihiko Noro ,  Kenji Sato

IPC分类号： H01L29/76

CPC分类号： H01L27/11568 ,  H01L27/115

摘要： A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.

摘要翻译： 半导体器件包括：半导体区域; 多个位线扩散层，其形成在所述半导体区域的上部，并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线，各自在列方向上形成在半导体区域上，并且与字线绝缘膜和栅极绝缘膜交叉。 存储单元形成在栅极绝缘膜和字线的交点处。 包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部，并且连接部分的上表面的电平低于连接扩散部的上表面的高度 半导体区域中的层。

公开(公告)号：US20080277971A1

公开(公告)日：2008-11-13

申请号：US12149715

申请日：2008-05-07

申请人： Kenji Sato

发明人： Kenji Sato

IPC分类号： B62D33/02

CPC分类号： B62D21/03 ,  B62D25/2054

摘要： A vehicle deck structure that can suppress deformation of a deck floor is provided. The vehicle deck structure includes a deck floor that extends in a vehicle body front-rear direction and a vehicle width direction, a cross member disposed at a lower side of the deck floor and whose longitudinal direction corresponds to the vehicle width direction, and a top plate as a reinforcing member interposed between the deck floor and the cross member. The top plate has a plurality of ridges, whose longitudinal directions each correspond to the vehicle body front-rear direction, and which are arranged in parallel in a vehicle width direction, and these ridges overhang at both sides in the vehicle front-rear direction with respect to the cross member.

摘要翻译： 提供了能够抑制甲板地板的变形的车辆甲板结构。 车辆甲板结构包括在车身前后方向和车宽方向上延伸的甲板地板，设置在甲板地板的下侧并且其纵向方向对应于车辆宽度方向的横梁，以及顶部 板作为插入在甲板底板和横梁之间的加强构件。 顶板具有多个脊部，其长度方向各自对应于车体前后方向，并且在车辆宽度方向上平行布置，并且这些脊部在车辆前后方向上两侧悬伸， 尊重十字架成员。