摘要:
A degree of polarization control device includes: a calcium fluoride crystal substrate for transmitting a laser beam; a polarization monitor for measuring the degree of polarization of a laser beam transmitted through the calcium fluoride crystal substrate; and a controller for controlling the rotation angle of the calcium fluoride crystal substrate according to the degree of polarization measured by the polarization monitor; the calcium fluoride crystal substrate being formed by a flat plate having a laser beam entering surface and a laser beam exiting surface running in parallel with the (111) crystal face, the Brewster angle being selected for the incident angle, the rotation angle around the [111] axis operating as a central axis being controlled by the controller.
摘要:
A chamber apparatus, which may be used with an external apparatus having an obscuration region, may include: a chamber in which EUV light is generated; a collector mirror having a first through-hole formed in a region aside from the center thereof and configured to collect the EUV light generated inside the chamber, the collector mirror being positioned such that the first through-hole is located in a region substantially corresponding to the obscuration region; and an etching gas supply unit provided in the first through-hole and configured to supply an etching gas into the chamber.
摘要:
An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.
摘要:
An extreme ultraviolet light generation system is an extreme ultraviolet light generation system which is used with a laser apparatus and is connected to an external device so as to supply extreme ultraviolet light thereto, and the extreme ultraviolet light generation system may include: a chamber provided with at least one inlet through which a laser beam is introduced thereinto; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element disposed inside the chamber; an etching gas introduction unit provided to the chamber through which etching gas passes, the etching gas being introduced to etch debris of the target material which is emitted when the target material is irradiated with the laser beam inside the chamber and adheres to the at least one optical element; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.
摘要:
An extreme ultraviolet light source apparatus generating an extreme ultraviolet light from plasma generated by irradiating a target material with a laser light within a chamber, and controlling a flow of ions generated together with the extreme ultraviolet light using a magnetic field or an electric field, the extreme ultraviolet light source apparatus comprises an ion collector device collecting the ion via an aperture arranged at a side of the chamber, and an interrupting mechanism interrupting movement of a sputtered particle in a direction toward the aperture, the sputtered particle generated at an ion collision surface collided with the ion in the ion collector device.
摘要:
An extreme ultraviolet light source apparatus has a magnetic field generator which generates a magnetic field region around a direction of the magnetic field passing through a plasma region in which a plasma is to be generated and converges charged particles including ion emitted from the plasma region toward the direction of the magnetic field, a first charged particle collector (receiver) mounted at both sides of an axis of the magnetic field in the magnetic field region in order to collect (receive) the charged particles converged by the magnetic field, a target supply unit supplying a target from a nozzle located outside a converging region in which the charged particles are to be converged inside the magnetic field region in an extreme ultraviolet light generating chamber, and a target collector located at a position opposite to the nozzle, the target retrieval portion retrieving a residual target which does not contribute to generation of the plasma.
摘要:
A gas discharge chamber that uses a calcium fluoride crystal which reduces a breakage due to mechanical stress (window holder and laser gas pressure), thermal stress from light absorption, and the like, increases the degree of linear polarization of output laser, and suppresses degradation due to strong ultraviolet (ArF, in particular) laser light irradiation. A first window (2) and a second window (3) of the gas discharge chamber have an incident plane and an emitting plane in parallel with a (111) crystal plane of their calcium fluoride crystal. With respect to an arrangement where laser light entering the calcium fluoride crystal passes through a plane including a axis and a axis of each of the first window (2) and the second window (3) as seen from inside the chamber (1), the first window (2) and the second window (3) are arranged in positions rotated in the same direction by the same angle about their axis.
摘要:
In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.
摘要:
An EUV light source apparatus in which contamination or damage of optical elements and other component elements by debris can be suppressed to realize longer lives of them. The EUV light source apparatus is an apparatus for radiating extreme ultraviolet light by generating plasma of a target material within a chamber, and includes: a first laser unit for applying a first laser beam to the target material to generate pre-plasma; a second laser unit for applying a second laser beam to the pre-plasma to generate a main plasma for radiating the extreme ultraviolet light; and a magnetic field generating unit for generating a magnetic field within the chamber to control a state of at least one of the pre-plasma and the main plasma.
摘要:
A chamber apparatus used with a laser apparatus may include: a chamber provided with at least one inlet through which a laser beam outputted from the laser apparatus enters the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a magnetic field generation unit for generating a magnetic field in the predetermined region; and a charged particle collection unit disposed in a direction of a magnetic flux of the magnetic field for collecting a charged particle thereinto, the charged particle being generated when the target material is irradiated with the laser beam inside the chamber and traveling along the magnetic flux.