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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    53.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20130122706A1

    公开(公告)日：2013-05-16

    申请号：US13428681

    申请日：2012-03-23

    申请人： Hisashi OKUCHI ,  Hidekazu Hayashi ,  Kentaro Shimayama ,  Hiroshi Tomita

    发明人： Hisashi OKUCHI ,  Hidekazu Hayashi ,  Kentaro Shimayama ,  Hiroshi Tomita

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30604 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834

    摘要： According to one embodiment, a method of manufacturing of a semiconductor device is provided. In the method, a front surface of a semiconductor substrate and a front surface of a support substrate are bonded to each other by an adhesive. A part of a circumferential part of the support substrate is subjected to water-repellent treatment to thereby form a water-repellent area on the part of the circumferential part in such a manner that the water-repellent area and an end face of the adhesive are in contact with each other. The semiconductor substrate is removed from a rear surface side by wet etching.

    摘要翻译： 根据一个实施例，提供了半导体器件的制造方法。 在该方法中，半导体衬底的前表面和支撑衬底的前表面通过粘合剂彼此粘结。 对支撑基板的圆周部分的一部分进行防水处理，从而在周向部分的一部分上形成防水区域，使得防水区域和粘合剂的端面为 彼此接触。 通过湿法蚀刻从背面侧去除半导体衬底。

    MOLD MANUFACTURING METHOD AND ELECTRODE STRUCTURE FOR USE THEREIN
    54.
    发明申请
    MOLD MANUFACTURING METHOD AND ELECTRODE STRUCTURE FOR USE THEREIN 有权
    模具制造方法及其使用的电极结构

    公开(公告)号：US20110315557A1

    公开(公告)日：2011-12-29

    申请号：US13254556

    申请日：2010-03-02

    申请人： Hidekazu Hayashi ,  Tokio Taguchi ,  Kazuhiko Tsuda

    发明人： Hidekazu Hayashi ,  Tokio Taguchi ,  Kazuhiko Tsuda

    IPC分类号： C25D11/12 ,  C25D17/12

    CPC分类号： G02B1/118 ,  B29C33/424 ,  B29K2905/02 ,  C25D11/12 ,  C25D11/18 ,  C25D11/24

    摘要： A method of fabricating a motheye mold according to the present invention includes the steps of: (a) anodizing a surface of an aluminum film (10a) via an electrode (32a) that is in contact with the surface, thereby forming a porous alumina layer which has a plurality of very small recessed portions; (b) after step (a), allowing the porous alumina layer to be in contact with an etchant, thereby enlarging the very small recessed portions of the porous alumina layer; and (c) after step (b), further anodizing the surface to grow the plurality of very small recessed portions. The aluminum film is made of aluminum with a purity of 99.99 mass % or higher. The electrode includes a first electrode portion (32a1) which is made of aluminum with a purity of 99.50 mass % or lower and a second electrode portion (32a2) which is made of aluminum with a higher purity than the aluminum of the first electrode portion and which is interposed between the surface and the first electrode portion. Step (a) and step (c) are performed with the second electrode portion being in contact with the surface in an electrolytic solution. According to the present invention, a method of efficiently anodizing an aluminum film formed over a large surface substrate and an electrode structure for use in the method.

    摘要翻译： 根据本发明的制造动植物模具的方法包括以下步骤：（a）通过与表面接触的电极（32a）阳极氧化铝膜（10a）的表面，从而形成多孔氧化铝层 其具有多个非常小的凹部; （b）在步骤（a）之后，使多孔氧化铝层与蚀刻剂接触，从而扩大多孔氧化铝层的非常小的凹部; 和（c）在步骤（b）之后，进一步对表面进行阳极氧化以使多个非常小的凹进部分生长。 铝膜由纯度为99.99质量％以上的铝制成。 电极包括纯度为99.50质量％以下的铝制的第一电极部分（32a1）和纯度高于第一电极部分的铝的纯铝的第二电极部分（32a2），以及 其介于表面和第一电极部分之间。 步骤（a）和步骤（c）在第二电极部分与电解液中的表面接触的情况下进行。 根据本发明，有效地阳极氧化形成在大表面基板上的铝膜和用于该方法的电极结构的方法。

    Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
    57.
    发明授权
    Magnetic memory element, magnetic memory and manufacturing method of magnetic memory 有权
    磁存储元件，磁存储器和磁存储器的制造方法

    公开(公告)号：US06396735B2

    公开(公告)日：2002-05-28

    申请号：US09814560

    申请日：2001-03-22

    申请人： Masashi Michijima ,  Hidekazu Hayashi ,  Ryoji Minakata

    发明人： Masashi Michijima ,  Hidekazu Hayashi ,  Ryoji Minakata

    IPC分类号： G11C1115

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  H01L43/08

    摘要： In a magnetic memory of the present invention which includes a magnetic memory element composed of at least a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer stacked, a third ferromagnetic layer is provided via at least one conductor layer, on one side of the second ferromagnetic layer the other side being closer to the non-magnetic layer. The magnetic memory elements can thereby be provided via a smaller interval in-between, thereby realizing a magnetic memory having higher density than a conventional magnetic memory. Further, the first conductor layer for supplying a current to provide magnetization information can be disposed in the vicinity of the second ferromagnetic layer as a storage layer, thereby providing a magnetic memory capable of generating magnetic poles sufficient to reverse magnetization even by a small current, and low power consumption.

    摘要翻译： 在包括由至少第一铁磁层，非磁性层和第二铁磁层组成的磁存储元件的本发明的磁存储器中，第三铁磁层经由至少一个导体层提供，一个 所述第二铁磁层的另一侧更靠近所述非磁性层。 因此，可以通过较小的间隔来提供磁存储元件，从而实现比常规磁存储器更高密度的磁存储器。 此外，用于提供电流以提供磁化信息的第一导体层可以设置在作为存储层的第二铁磁层附近，从而提供能够产生足以使小磁化反转磁化的磁极的磁存储器， 和低功耗。

    Method for producing anodized film
    58.
    发明授权
    Method for producing anodized film 有权
    生产阳极氧化膜的方法

    公开(公告)号：US09133558B2

    公开(公告)日：2015-09-15

    申请号：US13877182

    申请日：2011-10-06

    申请人： Hidekazu Hayashi

    发明人： Hidekazu Hayashi

    IPC分类号： C25D1/08 ,  C25D11/04 ,  C23C14/00 ,  C23C14/18 ,  C23C14/58 ,  C25D11/12 ,  C25D11/24 ,  C25D11/10

    CPC分类号： C25D1/08 ,  C23C14/0005 ,  C23C14/185 ,  C23C14/5853 ,  C25D11/04 ,  C25D11/10 ,  C25D11/12 ,  C25D11/24

    摘要： A method for manufacturing an anodized film according to an embodiment of the present invention includes the steps of: (a) providing a multilayer structure that includes a base, a sacrificial layer which is provided on the base and which contains aluminum, and an aluminum layer which is provided on a surface of the sacrificial layer; (b) partially anodizing the aluminum layer to form a porous alumina layer which has a plurality of minute recessed portions; and (c) after step (b), separating the porous alumina layer from the multilayer structure. According to an embodiment of the present invention, a self-supporting anodized film which includes a porous alumina layer can be manufactured more conveniently as compared with the conventional methods.

    摘要翻译： 根据本发明的实施方案的阳极氧化膜的制造方法包括以下步骤：（a）提供一种多层结构，其包括基材，设置在基材上并含有铝的牺牲层和铝层 其设置在所述牺牲层的表面上; （b）部分阳极氧化铝层以形成具有多个微小凹陷部分的多孔氧化铝层; 和（c）在步骤（b）之后，从多层结构分离多孔氧化铝层。 根据本发明的实施方案，与常规方法相比，可以更方便地制造包括多孔氧化铝层的自支撑阳极氧化膜。

    Supercritical drying method for semiconductor substrate
    59.
    发明授权
    Supercritical drying method for semiconductor substrate 有权
    半导体衬底的超临界干燥方法

    公开(公告)号：US08950082B2

    公开(公告)日：2015-02-10

    申请号：US13600860

    申请日：2012-08-31

    申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Linan Ji

    发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Linan Ji

    IPC分类号： F26B5/00 ,  F26B7/00 ,  H01L21/02 ,  H01L21/67 ,  F26B5/04 ,  F26B3/00

    CPC分类号： H01L21/02101 ,  F26B3/00 ,  F26B3/02 ,  F26B5/005 ,  F26B5/04 ,  F26B7/00 ,  H01L21/02057 ,  H01L21/67034

    摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.

    摘要翻译： 根据一个实施例，用于半导体衬底的超临界干燥方法包括将半导体衬底（半导体衬底的被水溶性有机溶剂润湿的表面）引入室内，密封腔并增加温度 在室内，不低于水溶性有机溶剂的临界温度，从而使水溶性有机溶剂进入超临界状态，降低室内的压力并将超临界状态的水溶性有机溶剂改变为 气体，从而从室中排出水溶性有机溶剂，随着室内的压力降低到大气压，开始向室内供应惰性气体，并且在惰性气体存在于内部的状态下冷却半导体衬底 房间。

    Supercritical drying method for semiconductor substrate
    60.
    发明授权
    Supercritical drying method for semiconductor substrate 有权
    半导体衬底的超临界干燥方法

    公开(公告)号：US08709170B2

    公开(公告)日：2014-04-29

    申请号：US13052232

    申请日：2011-03-21

    申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima

    发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima

    IPC分类号： B08B7/00 ,  B08B7/04 ,  B08B3/00

    CPC分类号： H01L21/67034

    摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

    摘要翻译： 在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中 用水溶性有机溶剂润湿。 然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。 此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂 处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。