公开(公告)号：US06660700B2

公开(公告)日：2003-12-09

申请号：US10003373

申请日：2001-11-15

Applicant: William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

Inventor： William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

IPC: C11D904

CPC classification number: H01L21/02071 ,  C11D3/2072 ,  C11D7/02 ,  C11D7/261 ,  C11D7/264 ,  C11D7/265 ,  C11D7/266 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5009 ,  C11D7/5013 ,  C11D11/0047 ,  C23G5/02 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/31138

Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

公开(公告)号：US06599870B2

公开(公告)日：2003-07-29

申请号：US10179867

申请日：2002-06-25

Applicant: William A. Wojtczak ,  George Guan ,  Long Nguyen

Inventor： William A. Wojtczak ,  George Guan ,  Long Nguyen

IPC: C11D710

CPC classification number: G03F7/425 ,  G03F7/423 ,  G03F7/427 ,  H01L21/02052 ,  H01L21/31116

Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).

Abstract translation: 本发明包括用于剥离源自卤素等离子体金属蚀刻的氧化硅等离子体灰化的晶片残留物的制剂。 制剂含有以下通用组分（百分比以重量计）：

公开(公告)号：US06306807B1

公开(公告)日：2001-10-23

申请号：US09312933

申请日：1999-05-17

Applicant: William A. Wojtczak ,  George Guan ,  Long Nguyen

Inventor： William A. Wojtczak ,  George Guan ,  Long Nguyen

IPC: C11D708

CPC classification number: G03F7/425 ,  G03F7/423 ,  G03F7/427 ,  H01L21/02052 ,  H01L21/31116

Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA)

Abstract translation: 本发明包括用于剥离源自卤素等离子体金属蚀刻的氧化硅等离子体灰化的晶片残留物的制剂。 制剂含有以下通用组分（百分比以重量计）：优选的胺是：单乙醇胺（MEA）三乙醇胺（TEA）

公开(公告)号：US08293694B2

公开(公告)日：2012-10-23

申请号：US12581843

申请日：2009-10-19

Applicant: William A. Wojtczak ,  Ma. Fatimo Seijo ,  David Bernhard ,  Long Nguyen

Inventor： William A. Wojtczak ,  Ma. Fatimo Seijo ,  David Bernhard ,  Long Nguyen

IPC: C11D7/50 ,  G03F7/42

CPC classification number: C11D3/30 ,  C09K13/00 ,  C09K13/08 ,  C11D3/32 ,  C11D3/33 ,  C11D7/10 ,  C11D7/264 ,  C11D7/265 ,  C11D7/266 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  C23F11/142 ,  C23F11/146 ,  C23G1/103 ,  C23G1/106 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/32136

Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract translation: 半导体晶片清洁配方，包括1-35重量％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。

公开(公告)号：US08212392B2

公开(公告)日：2012-07-03

申请号：US11960384

申请日：2007-12-19

Applicant: Ariel Pickholz ,  Long Nguyen ,  Shay Mizrachi

Inventor： Ariel Pickholz ,  Long Nguyen ,  Shay Mizrachi

IPC: H02J1/10 ,  G06F1/32

CPC classification number: G06F1/26 ,  G06F1/32 ,  H02J9/00 ,  Y10T307/344 ,  Y10T307/391 ,  Y10T307/461 ,  Y10T307/469

Abstract: Methods and systems for supplying power to multiple voltage islands using a single supply source are disclosed. Aspects of one method may include providing power to a first of a plurality of voltage islands, and individually controlling providing of power to each of a remaining portion of the plurality of voltage islands. For example, when an electronic system is first powered on, a low current voltage source may be used to supply power to a primary voltage island. As a higher current voltage source becomes available, power derived from the higher current voltage source may be provided to the primary voltage island and to secondary voltage islands. Power to each of the secondary voltage islands may be, for example, individually controlled via a power MOS transistor. The power MOS transistor may also be configured to allow a faster blocking time than unblocking time.

Abstract translation: 公开了使用单个电源为多个电压岛供电的方法和系统。 一种方法的方面可以包括向多个电压岛中的第一电压岛提供电力，并且单独控制向多个电压岛的剩余部分中的每一个提供功率。 例如，当电子系统首次通电时，可以使用低电流电压源来向初级电压岛供电。 随着较高电流电压源变得可用，可以从较高电流电压源获得的功率提供给初级电压岛和次级电压岛。 每个次级电压岛的功率可以例如通过功率MOS晶体管单独控制。 功率MOS晶体管也可以被配置为允许比解锁时间更快的阻塞时间。

公开(公告)号：US20100035785A1

公开(公告)日：2010-02-11

申请号：US12581843

申请日：2009-10-19

Applicant: William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

Inventor： William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

IPC: C11D7/32

CPC classification number: C11D3/30 ,  C09K13/00 ,  C09K13/08 ,  C11D3/32 ,  C11D3/33 ,  C11D7/10 ,  C11D7/264 ,  C11D7/265 ,  C11D7/266 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  C23F11/142 ,  C23F11/146 ,  C23G1/103 ,  C23G1/106 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/32136

Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract translation: 半导体晶片清洁配方，包括1-35重量％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。

公开(公告)号：US07605113B2

公开(公告)日：2009-10-20

申请号：US11135892

申请日：2005-05-24

Applicant: William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

Inventor： William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

IPC: H01L21/306

CPC classification number: C11D3/30 ,  C09K13/00 ,  C09K13/08 ,  C11D3/32 ,  C11D3/33 ,  C11D7/10 ,  C11D7/264 ,  C11D7/265 ,  C11D7/266 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  C23F11/142 ,  C23F11/146 ,  C23G1/103 ,  C23G1/106 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/32136

Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract translation: 半导体晶片清洁配方，包括1-35％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。

公开(公告)号：US06967169B2

公开(公告)日：2005-11-22

申请号：US10861158

申请日：2004-06-04

Applicant: William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

Inventor： William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

IPC: C11D3/04 ,  C09K13/00 ,  C09K13/08 ,  C11D1/00 ,  C11D3/20 ,  C11D3/30 ,  C11D3/32 ,  C11D7/10 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/34 ,  C11D11/00 ,  C11D17/08 ,  G03F7/42 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01L21/02074 ,  C09K13/00 ,  C09K13/08 ,  C11D7/10 ,  C11D7/264 ,  C11D7/265 ,  C11D7/266 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071

Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract translation: 半导体晶片清洁配方，包括1-21％ 氟化物源，20-55重量％ 有机胺，0.5-40重量％ 含氮组分，例如含氮羧酸或亚胺，23-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。

公开(公告)号：US20050215446A1

公开(公告)日：2005-09-29

申请号：US11135892

申请日：2005-05-24

Applicant: William Wojtczak ,  Ma. Seijo ,  David Bernhard ,  Long Nguyen

Inventor： William Wojtczak ,  Ma. Seijo ,  David Bernhard ,  Long Nguyen

IPC: C11D3/04 ,  C09K13/00 ,  C09K13/08 ,  C11D1/00 ,  C11D3/20 ,  C11D3/30 ,  C11D3/32 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/34 ,  C11D7/60 ,  C11D11/00 ,  C11D17/08 ,  C23F11/14 ,  C23G1/10 ,  G03F7/42 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213

CPC classification number: C11D3/30 ,  C09K13/00 ,  C09K13/08 ,  C11D3/32 ,  C11D3/33 ,  C11D7/10 ,  C11D7/264 ,  C11D7/265 ,  C11D7/266 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  C23F11/142 ,  C23F11/146 ,  C23G1/103 ,  C23G1/106 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/32136

Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract translation: 半导体晶片清洁配方，包括1-35重量％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。

公开(公告)号：US20050029395A1

公开(公告)日：2005-02-10

申请号：US10881148

申请日：2004-06-30

Applicant: Donald Anderson ,  Richard Anthony ,  Long Nguyen

Inventor： Donald Anderson ,  Richard Anthony ,  Long Nguyen

IPC: G01S19/48 ,  F41G7/00 ,  F41G7/30 ,  G01S19/09 ,  G01S19/39 ,  G08G5/00 ,  H04K1/00 ,  H04L9/08

CPC classification number: F41G7/007 ,  G01S19/03 ,  G01S19/05

Abstract: A weapons system is disclosed that provides hot-start navigational information to the Global-Positioning-System receivers on missiles prior to flight. The system comprises a Global-Positioning-System receiver that uses a classified red cryptographic key to decode the P(Y) signal from one or more of the Global-Positioning-System constellation of satellites. Once the P(Y) signal is decoded, one or more characteristics (e.g., the PRN code synchronization, the Doppler shift, the modulation bit sequence, etc.) of the signal is derived. These characteristics of the signal—and some other information including a black cryptographic key that comprises the red cryptographic key—are then provided to the Global-Positioning-System receivers on missiles prior to flight. By giving the missiles this information, the missiles are able to acquire the P(Y) signals themselves more quickly than they otherwise could, which enables them to determine their position more quickly than they otherwise could.

Abstract translation: 公开了一种武器系统，其在飞行前向导弹的全球定位系统接收机提供热启动导航信息。 该系统包括全球定位系统接收机，其使用分类的红色加密密钥来解码来自卫星的全球定位系统星座中的一个或多个的P（Y）信号。 一旦解码了P（Y）信号，就得出信号的一个或多个特性（例如，PRN码同步，多普勒频移，调制比特序列等）。 然后，信号的这些特征以及包括红色加密密钥的黑色加密密钥的一些其他信息在飞行前在导弹上提供给全球定位系统接收机。 通过给导弹这个信息，导弹能够比其他方式更快地获取P（Y）信号，这使得他们能够比其他方式更快地确定它们的位置。