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1.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物公开(公告)号：US08293694B2
公开(公告)日：2012-10-23
申请号：US12581843
申请日：2009-10-19
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-35重量％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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2.发明申请AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE 有权含有特殊腐蚀抑制剂的清洁组合物，用于清洁半导体基板上的无机残留物公开(公告)号：US20100035785A1
公开(公告)日：2010-02-11
申请号：US12581843
申请日：2009-10-19
IPC分类号： C11D7/32
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-35重量％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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3.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物公开(公告)号：US07605113B2
公开(公告)日：2009-10-20
申请号：US11135892
申请日：2005-05-24
IPC分类号： H01L21/306
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-35％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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4.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物公开(公告)号：US06967169B2
公开(公告)日：2005-11-22
申请号：US10861158
申请日：2004-06-04
IPC分类号： C11D3/04 , C09K13/00 , C09K13/08 , C11D1/00 , C11D3/20 , C11D3/30 , C11D3/32 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/34 , C11D11/00 , C11D17/08 , G03F7/42 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02074 , C09K13/00 , C09K13/08 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425 , H01L21/02063 , H01L21/02071
摘要： A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-21％ 氟化物源，20-55重量％ 有机胺，0.5-40重量％ 含氮组分，例如含氮羧酸或亚胺，23-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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5.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物公开(公告)号：US06755989B2
公开(公告)日：2004-06-29
申请号：US09818073
申请日：2001-03-27
IPC分类号： C09K1300
CPC分类号： H01L21/02074 , C09K13/00 , C09K13/08 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425 , H01L21/02063 , H01L21/02071
摘要： A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-21％ 氟化物源，20-55重量％ 有机胺，0.5-40重量％ 含氮组分，例如含氮羧酸或亚胺，23-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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6.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrates 有权包含用于清洁半导体衬底上的无机残留物的铜特异性腐蚀抑制剂的水性清洁组合物公开(公告)号：US07662762B2
公开(公告)日：2010-02-16
申请号：US11042531
申请日：2005-01-24
IPC分类号： C11D7/32
CPC分类号： H01L21/02074 , C09K13/00 , C09K13/08 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425 , H01L21/02063 , H01L21/02071
摘要： A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-21％ 氟化物源，20-55重量％ 有机胺，0.5-40重量％ 含氮组分，例如含氮羧酸或亚胺，23-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细的铜互连结构的半导体晶片的无机残渣。
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公开(公告)号：US06660700B2
公开(公告)日：2003-12-09
申请号：US10003373
申请日：2001-11-15
IPC分类号： C11D904
CPC分类号： H01L21/02071 , C11D3/2072 , C11D7/02 , C11D7/261 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D11/0047 , C23G5/02 , G03F7/425 , H01L21/02052 , H01L21/02063 , H01L21/31133 , H01L21/31138
摘要： A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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公开(公告)号：US06896826B2
公开(公告)日：2005-05-24
申请号：US10047554
申请日：2001-10-23
IPC分类号： C11D3/04 , C09K13/00 , C09K13/08 , C11D1/00 , C11D3/20 , C11D3/30 , C11D3/32 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/34 , C11D7/60 , C11D11/00 , C11D17/08 , C23F11/14 , C23G1/10 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065 , H01L21/321 , H01L21/3213 , C09K13/04 , C09K13/06
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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公开(公告)号：US06344432B1
公开(公告)日：2002-02-05
申请号：US09732370
申请日：2000-12-08
IPC分类号： C11D904
CPC分类号： H01L21/02071 , C11D3/2072 , C11D7/02 , C11D7/261 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D11/0047 , C23G5/02 , G03F7/425 , H01L21/02052 , H01L21/02063 , H01L21/31133 , H01L21/31138
摘要： A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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10.发明授权Boric acid containing compositions for stripping residues from semiconductor substrates 有权含硼酸的组合物用于从半导体衬底剥离残留物公开(公告)号：US06492310B2
公开(公告)日：2002-12-10
申请号：US09801543
申请日：2001-03-07
申请人： William A. Wojtczak , George Guan , Long Nguyen
发明人： William A. Wojtczak , George Guan , Long Nguyen
IPC分类号： C11D162
CPC分类号： G03F7/425 , G03F7/423 , G03F7/427 , H01L21/02052 , H01L21/31116
摘要： The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid 2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional) 0-5% Chelating agent (optional) 0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
摘要翻译： 本发明包括用于剥离源自卤素等离子体金属蚀刻的氧化硅等离子体灰化的晶片残留物的制剂。 制剂含有以下通用组分（百分比以重量计）：优选的胺是：单乙醇胺（MEA）三乙醇胺（TEA）。
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