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    Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
    51.
    发明授权
    Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates 有权
    在碳化硅基体上的Pendeoepitaxial氮化镓半导体层

    公开(公告)号：US06177688B1

    公开(公告)日：2001-01-23

    申请号：US09198784

    申请日：1998-11-24

    申请人： Kevin J. Linthicum ,  Thomas Gehrke ,  Darren B. Thomson ,  Eric P. Carlson ,  Pradeep Rajagopal ,  Robert F. Davis

    发明人： Kevin J. Linthicum ,  Thomas Gehrke ,  Darren B. Thomson ,  Eric P. Carlson ,  Pradeep Rajagopal ,  Robert F. Davis

    IPC分类号： H01L29267

    CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

    摘要： An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

    摘要翻译： 在碳化硅衬底上的下面的氮化镓层用掩模进行掩模，该掩模包括其中的开口阵列，并且通过开口阵列蚀刻下面的氮化镓层，以在下面的氮化镓层和沟槽之间形成沟槽。 所述柱各自包括侧壁和其上具有掩模的顶部。 柱的侧壁横向生长到沟槽中，从而形成氮化镓半导体层。 在这种侧向生长期间，面罩防止从柱的顶部成核和垂直生长。 因此，生长横向进入沟槽，从柱的侧壁悬挂。 柱的侧壁可以横向生长到沟槽中，直到横向生长的侧壁在沟槽中聚结，从而形成氮化镓半导体层。 可以继续从柱的侧壁的横向生长，使得氮化镓层垂直地通过掩模中的开口生长，并且横向过度地延伸到柱的顶部上的掩模上，从而形成氮化镓半导体层。 横向过度生长可以继续，直到生长的侧壁在掩模上聚结，从而形成连续的氮化镓半导体层。 微电子器件可以形成在连续的氮化镓半导体层中。

    Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
    52.
    发明授权
    Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer 失效
    包括从下面的氮化镓层延伸的侧面氮化镓层的氮化镓半导体结构

    公开(公告)号：US6051849A

    公开(公告)日：2000-04-18

    申请号：US32190

    申请日：1998-02-27

    申请人： Robert F. Davis ,  Ok-Hyun Nam ,  Tsvetanka Zheleva ,  Michael D. Bremser

    发明人： Robert F. Davis ,  Ok-Hyun Nam ,  Tsvetanka Zheleva ,  Michael D. Bremser

    IPC分类号： H01L21/20 ,  H01L33/00 ,  H01V33/00

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.

    摘要翻译： 通过用包括其中的开口阵列的掩模掩蔽下面的氮化镓层来制造氮化镓半导体层，并且通过开口阵列将掩模下方的氮化镓层生长到掩模上，从而形成杂色的氮化镓半导体 层。 尽管位错缺陷可能通过掩模开口从下面的氮化镓层垂直传播到生长的氮化镓层，但是过度生长的氮化镓层相对无缺陷。 杂色生长的氮化镓半导体层可能长满，直到杂色的氮化镓层在掩模上聚结，形成连续的长满的单晶氮化镓半导体层。 可以使用金属有机气相外延生长氮化镓半导体层。 微电子器件可以形成在杂草生长的氮化镓半导体层中。

    Platinum ohmic contact to p-type silicon carbide
    54.
    发明授权
    Platinum ohmic contact to p-type silicon carbide 失效
    铂欧姆接触到p型碳化硅

    公开(公告)号：US5323022A

    公开(公告)日：1994-06-21

    申请号：US943043

    申请日：1992-09-10

    申请人： Robert C. Glass ,  John W. Palmour ,  Robert F. Davis ,  Lisa S. Porter

    发明人： Robert C. Glass ,  John W. Palmour ,  Robert F. Davis ,  Lisa S. Porter

    IPC分类号： H01L29/43 ,  H01L21/04 ,  H01L21/28 ,  H01L29/24 ,  H01L29/45 ,  H01L29/40 ,  H01L29/46 ,  H01L29/62

    CPC分类号： H01L29/1608 ,  H01L21/0485 ,  H01L29/45 ,  Y10S148/148

    摘要： A method and resulting ohmic contact structure between a high work function metal and a wide bandgap semiconductor for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. The structure can withstand annealing while retaining ohmic characteristics. The ohmic contact structure comprises a portion of single crystal wide bandgap semiconductor material; a contact formed of a high work function metal on the semiconductor portion; and a layer of doped p-type semiconductor material between the single crystal portion and the metal contact. The doped layer has a sufficient concentration of p-type dopant to provide ohmic behavior between the metal and the semiconductor material.

    摘要翻译： 高功函数金属和宽带隙半导体之间的方法和结果欧姆接触结构，金属的功函数通常不足以在金属和半导体之间形成欧姆接触。 该结构可以承受退火同时保持欧姆特性。 欧姆接触结构包括单晶宽带隙半导体材料的一部分; 在半导体部分上由高功函数金属形成的触点; 以及在单晶部分和金属接触之间的掺杂p型半导体材料层。 掺杂层具有足够的p型掺杂剂浓度以在金属和半导体材料之间提供欧姆特性。